Prof William Gillin

Professor of Experimental Physics
School of Physical and Chemical Sciences
Queen Mary University of London
Queen Mary University of London
Research
Interests
William Gillin works primarily on the electrical and optical properties of organic materials. His primary research interests are in the area or organic lanthanide complexes for producing optical gain. He is also works with Paragraf Ltd on the use of vapour phase deposited graphene as a replacement for indium tin oxide in OLED devices and has a longstanding interest in organic spintronics.Lanthanide ions, such as erbium, are widely used in optical amplifiers and lasers due to their long intrinsic lifetime which makes population inversion possible. However, this same property means that they are very poor at absorbing light so powerful pump sources, such as lasers, are required to make optical amplifiers work. By incorporating the ion into an organic host it is possible to excite the organic directly and then transfer the energy directly to the lanthanide ion; this is called sensitization. Using this approach it may be possible to replace the high power pump laser with low cost LEDs. We have developed novel fluorinated organic molecules that allow us to produce materials where the quantum efficiency of the erbium ions is >50% and which exhibit sensitization of a factor of ~10000. Using this approach we have demonstrated population inversion for the erbium ions in an organic layer deposited onto a silicon substrate when optically pumped from a low power light source. This technology has been patented and is the basis for a spin-out company Chromosol Ltd which Prof Gillin launched in 2017.
Organic spintronics is the control and manipulation of electronic spin on individual organic molecules within an organic electronic device. This technology can, for example, be used to produce devices that are highly sensitive to weak magnetic fields. We have a programme that works on producing organic spinvalves and understanding spin injection and extraction in these devices and the role of interfacial layers on controlling those processes. We also work on understanding the spin interactions that occur within devices such as organic light emitting diodes and organic photovoltaic cells. Controlling these processes is vital to improving device performance as many of the quenching mechanisms are highly spin dependent.
Publications
Publications of specific relevance to the Centre for Chemical Research2024
Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire WafersWeng Z Wingfield B Evans P Baginski P Kainth J Nikolaenko A Lee LY Baginska J et al.
Acs Applied Electronic Materials, American Chemical Society
16-09-2024
2023
Wafer-scale transfer-free graphene as an ITO replacement for OLEDsWeng Z Dixon S Lee LY Humphreys CJ Guiney I Fenwick O Gillin WP
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC). vol. 00, 94-95.
25-10-2023
Luminescent, highly halogenated 2-(2-hydroxyphenyl)benzothiazole derivatives and their zinc complexesChawishli L Ibrahim A Karamshuk S Khan H Motevalli M Toiganbayeva S Abrahams I Gillin WP et al.
Journal of Fluorine Chemistry, Elsevier vol. 270
22-07-2023
2022
Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022)Weng Z Dixon SC Lee LY Humphreys CJ Guiney I Fenwick O Gillin WP
Advanced Optical Materials vol. 10 (3), 2270012-2270012.
05-02-2022
2021
Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting DiodesWeng Z Dixon SC Lee LY Humphreys CJ Guiney I Fenwick O Gillin WP
Advanced Optical Materials, Wiley, 2101675-2101675.
20-12-2021
Two-Step Synthesis of Bismuth-Based Hybrid Halide Perovskite Thin-FilmsTrifiletti V Luong S Tseberlidis G Riva S Binetti S
Materials, Mdpi vol. 14 (24), 7827-7827.
17-12-2021
Bright and Efficient Sensitized Near-Infrared Photoluminescence from an Organic Neodymium-Containing Composite Material System.Lyu C Li H Zhou S Liu G Wyatt PB Gillin WP Ye H
J Am Chem Soc
22-10-2021
Manipulation of Molecular Vibrations on Condensing Er3+State Densities for 1.5 μm ApplicationYe H Gorbaciova J Lyu C Burgess C Walton AS Zahra KM Curry RJ Bannerman RHS et al.
Journal of Physical Chemistry Letters, 9620-9625.
29-09-2021
Understanding asymmetric magnetoconductance in OLEDs: The effects of gradient magnetic fieldsWeng Z Kreouzis T
Organic Electronics, Elsevier Bv, 106251-106251.
19-06-2021
Erratum: Enhanced 1.54 μm luminescence of a perfluorinated erbium complex sensitized by perfluorinated Pt(ii) and Zn(ii) phthalocyanines with 980 nm emission (J. Mater. Chem. C (2021) DOI: 10.1039/d0tc05301e)Li H Liu X Lyu C Ma F Ye H Wyatt PB Gillin WP
Journal of Materials Chemistry C vol. 9 (3), 1107-1107.
21-01-2021
2020
Enhanced 1.54 µm luminescence of perfluorinated erbium complex sensitized by perfluorinated Pt(II) and Zn(II) phthalocyanines with 980 nm emissionLi H Liu X Lyu C Ma F Ye H Wyatt PB Gillin W
Journal of Materials Chemistry C
08-12-2020
Experimental Studies on the Dynamic Memcapacitance Modulation of the ReO3@ReS2 Composite Material-Based DiodeBorowiec J Liu M Liang W Kreouzis T He Y Ma Y
Nanomaterials, Mdpi vol. 10 (11)
23-10-2020
Fitting the magnetoresponses of the OLED using polaron pair model to obtain spin-pair dynamics and local hyperfine fieldsWeng Z Gillin WP
Scientific Reports, Springer Science and Business Media Llc vol. 10 (1)
08-10-2020
Prolonged and efficient near-infrared photoluminescence of a sensitized organic ytterbium-containing molecular compositeLyu C Li H Wyatt PB Gillin WP Ye H
Journal of Materials Chemistry C vol. 8 (28), 9502-9505.
28-07-2020
Enhanced 1.54-μm photo- and electroluminescence based on a perfluorinated Er(III) complex utilizing an iridium(III) complex as a sensitizerLi HF Liu XQ Lyu C Gorbaciova J Wen LL Shan GG Wyatt PB Ye HQ et al.
Light: Science and Applications, Springer Nature [Academic Journals on Nature.Com] vol. 9 (1)
04-03-2020
Enhanced 1.54-μm photo- and electroluminescence based on a perfluorinated Er(III) complex utilizing an iridium(III) complex as a sensitizer.Li H-F Liu X-Q Lyu C Gorbaciova J Wen L-L Shan G-G Wyatt PB Ye H-Q et al.
Light Sci Appl vol. 9 (1)
04-03-2020
2019
Aluminium promoted sulfidation of ammonium perrhenate: presence of nanobattery in the ReS2 composite material based memcapacitorBorowiec J Liang W He Y Wang SL
Chemical Engineering Journal, Elsevier Bv, 123745-123745.
07-12-2019
Experimental studies on the conduction mechanism and electrical properties of the inverted Ba doped ZnO nanoparticles based memristorliu M borowiec J Sun LJ Konop M Taallah A
Applied Physics Letters, Aip Publishing
15-08-2019
Modelling and fitting the Polaron Pair Magnetoconductance model to obtain a realistic local hyperfine field in Tris-(8-hydroxyquinoline)aluminium based diodesKREOUZIS T GILLIN WP
Scientific Reports, Nature Publishing Group
05-03-2019
2018
Enhancing the sensitization efficiency of erbium doped organic complexes by heavy halogen substitutionHU J KARAMSHUK S GORBACIOVA J YE H LU H ZHANG Y zheng Y liang X et al.
Journal of Materials Chemistry C, Royal Society of Chemistry
21-06-2018
Continuous Tuning of Organic Phosphorescence by Diluting Triplet Diffusion at the Molecular Level.Hu J Wyatt PB Gillin WP Ye H
J Phys Chem Lett, 2022-2024.
04-04-2018
Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs InterlayerGILLIN WP
IEEE Journal of Photovoltaics, Institute of Electrical and Electronics Engineers vol. 8 (3)
29-03-2018
High sensitization efficiency and energy transfer routes for population inversion at low pump intensity in Er organic complexes for IR amplificationHU J KARAMSHUK S GORBACIOVA J YE H LU H ZHANG Y Zheng Y Liang X et al.
Scientific Reports, Nature Publishing Group
19-02-2018
Control of oxygen vacancies in ZnO nanorods by annealing and their influence on ZnO/PEDOT:PSS diode behaviourTU Y CHEN S LI X GORBACIOVA J GILLIN WP KRAUSE S BRISCOE J
Journal of Materials Chemistry C, Royal Society of Chemistry
02-02-2018
Room temperature synthesis of ReS2through aqueous perrhenate sulfidation.Borowiec J Gillin WP Willis MAC Boi FS He Y Wen JQ
J Phys Condens Matter vol. 30 (5), 055702-055702.
11-01-2018
ForewordGillin W
In Lanthanide-Based Multifunctional Materials, Elsevier
01-01-2018
2017
Room temperature synthesis of ReS2 through aqueous perrhenate sulfidation.Borowiec J Gillin WP Willis M Boi F Schulz L
Journal of Physics
29-12-2017
Sensitization, energy transfer and infra-red emission decay modulation in Yb3+-doped NaYF4 nanoparticles with visible light through a perfluoroanthraquinone chromophoreLu H Peng Y Ye HQ Cui X Hu JX Gu H Khlobystov A Green M et al.
Scientific Reports, Nature Publishing Group vol. 7
11-07-2017
Functionalisation of ligands through click chemistry: long-lived NIR emission from organic Er(iii) complexes with a perfluorinated core and a hydrogen-containing shellPeng Y Hu JX Lu H Wilson RM Motevalli M Hernández I Gillin WP Wyatt PB et al.
Rsc Advances vol. 7 (1), 128-131.
01-01-2017
2016
Impurity effects on charge transport and magnetoconductance in a single layer poly(3-hexyl-thiophene) deviceGu H Chang S Lu H Holford DF Zhang T Gillin WP
Applied Physics Letters vol. 108 (20), 203301-203301.
16-05-2016
Solution-Processable Carbon Nanoelectrodes for Single-Molecule Investigations.Zhu J McMorrow J Crespo-Otero R Ao G Zheng M Gillin WP Palma M
J Am Chem Soc vol. 138 (9), 2905-2908.
09-03-2016
Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq3-based organic light-emitting diodes at room temperatureGILLIN WP Zhang T holford DF Gu H
Applied Physics Letters, American Institute of Physics (Aip) vol. 108
13-01-2016
Solution processed SnO2:Sb transparent conductive oxide as an alternative to indium tin oxide for applications in organic light emitting diodesEsro M Georgakopoulos S Lu H Vourlias G Krier A
Journal of Materials Chemistry C, Royal Society of Chemistry (Rsc) vol. 4 (16), 3563-3570.
01-01-2016
Solution processable molecular transport junctions employing carbon nanoelectrodesMcMorrow J Zhu J Crespo-Otore R Zheng M Gillin W
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY. vol. 251
01-01-2016
2015
Synthesis, Characterization and Application of Core-Shell Co0.16Fe2.84O4@NaYF4(Yb, Er) and Fe3O4@NaYF4(Yb, Tm) Nanoparticle as Tri-modal (MRI, PET/SPECT and Optical) Imaging AgentsCui X Mathe D Kovacs N Horvath I Jauregui-Osoro M Torres Martin de Rosales M Mullen GED Wong W et al.
Bioconjugate Chemistry, American Chemical Society vol. 27 (2), 319-328.
14-07-2015
Field-induced single-ion magnetic behaviour in a highly luminescent Er3+ complexCoutinho JT Pereira LCJ Martín-Ramos P Ramos Silva M Zheng YX Liang X Ye HQ Peng Y et al.
Materials Chemistry and Physics vol. 160, 429-434.
15-06-2015
Field-induced single-ion magnetic behaviour in a highly luminescent Er3+ complexCoutinho JT Pereira LCJ Martín-Ramos P Silva MR Zheng YX Liang X Ye HQ Peng Y et al.
Materials Chemistry and Physics, Elsevier vol. 160, 429-434.
01-06-2015
Annealing and doping-dependent magnetoresistance in single layer poly(3-hexyl-thiophene) organic semiconductor deviceGu H Chang S Holford D Zhang T Kreouzis T
Organic Electronics, Elsevier vol. 17, 51-56.
01-02-2015
Organic Chromophores-Based Sensitization of NIR-Emitting Lanthanides: Toward Highly Efficient Halogenated EnvironmentsHernández I Gillin WP
In Handbook on The Physics and Chemistry of Rare Earths 1-100.
01-01-2015
Chapter 269 Organic Chromophores-Based Sensitization of NIR-Emitting Lanthanides Toward Highly Efficient Halogenated EnvironmentsHernández I Gillin WP
1-100.
01-01-2015
2014
Ferromagnetic-organic interfacial states and their role on low voltage current injection in tris-8-hydroxyquinloline (Alq3) organic spin valvesZhang HT Han S Desai P Zhan YQ Li W Si W Scott K Drew AJ et al.
Applied Physics Letters, Aip Publishing vol. 105 (20)
17-11-2014
Concentration dependence of the up- and down-conversion emission colours of Er(3+)-doped Y2O3: a time-resolved spectroscopy analysis.Lu H Gillin WP
Phys Chem Chem Phys vol. 16 (38), 20957-20963.
14-10-2014
Visible-Range Sensitization of Er3+-Based Infrared Emission from Perfluorinated 2-Acylphenoxide ComplexesPeng Y Ye H Li Z Motevalli M Hernández I Gillin WP Wyatt PB
J. Phys. Chem. Lett., American Chemical Society vol. 5 (9), 1560-1563.
14-04-2014
The importance of holes in aluminium tris-8-hydroxyquinoline (Alq3) devices with Fe and NiFe contactsZhang H Desai P Zhan YQ Drew AJ Gillin WP Kreouzis T
Applied Physics Letters vol. 104 (1)
01-01-2014
Organo-erbium systems for optical amplification at telecommunications wavelengthsYe HQ Li Z Peng Y Wang CC Li TY Zheng YX Sapelkin A Adamopoulos G et al.
Nature Materials, Nature Publishing Group vol. 13 (April 2014), 382-386.
01-01-2014
Understanding the role of electron and hole trions on current transport in aluminium tris(8-hydroxyquinoline) using organic magnetoresistanceZhang S Willis M Gotto R Roy KA Kreouzis T Gillin WP
Applied Physics Letters vol. 104 (4)
01-01-2014
An organic multilevel non-volatile memory device based on multiple independent switching modesYou Y Yang K Yuan S Dong S Gillin WP
Organic Electronics vol. 15 (9), 1983-1989.
01-01-2014
Electronic and magnetic properties of the interface between metal-quinoline molecules and cobaltDroghetti A Steil S Grossmann N Haag N Zhang H Willis M Gillin WP Drew AJ et al.
Physical Review B vol. 89 (9)
01-01-2014
The transition from bipolaron to triplet-polaron magnetoresistance in a single layer organic semiconductor deviceGu H Kreouzis T
Organic Electronics vol. 15 (8), 1711-1716.
01-01-2014
2013
Effect of Fluorination on the Radiative Properties of Er3+ Organic Complexes: An Opto-Structural Correlation StudyYe H Peng Y Li Z Wang C-C Zheng Y Motevalli M Wyatt PB Gillin WP et al.
J Phys Chem C, American Chemical Society vol. 117 (45), 23970-23975.
15-10-2013
Importance of spin-orbit interaction for the electron spin relaxation in organic semiconductors.Nuccio L Willis M Schulz L Fratini S Messina F D'Amico M Pratt FL Lord JS et al.
Phys Rev Lett vol. 110 (21)
24-05-2013
Luminescent zinc(II) complexes of fluorinated benzothiazol-2-yl substituted phenoxide and enolate ligands.Li Z Dellali A Malik J Motevalli M Nix RM Olukoya T Peng Y Ye H et al.
Inorg Chem vol. 52 (3), 1379-1387.
04-02-2013
A single-device universal logic gate based on a magnetically enhanced memristor.Prezioso M Riminucci A Graziosi P Bergenti I Rakshit R Cecchini R Vianelli A Borgatti F et al.
Adv Mater vol. 25 (4), 534-538.
25-01-2013
Efficient sensitized emission in Yb(III) pentachlorotropolonate complexesHernández I Zheng Y-X Motevalli M Tan RHC Gillin WP Wyatt PB
Chemical Communications vol. 49 (19), 1933-1935.
01-01-2013
Special issue: Spins in Organic Semiconductors 2012Gillin W Morley N
Synthetic Metals vol. 173, 1-1.
01-01-2013
Low temperature magnetic field effects on the efficiency of aluminium tris(8-hydroxyquinoline) based organic light emitting diodes in the absence of magnetoresistanceZhang S Kreouzis T
Synthetic Metals vol. 173, 46-50.
01-01-2013
2012
Ambipolar charge transport in traditional organic hole transport layers.Khademi S Song JY Wyatt PB Kreouzis T Gillin WP
Adv Mater vol. 24 (17), 2278-2283.
02-05-2012
The role of interfaces in organic spin valves revealed through spectroscopic and transport measurementsDrew AJ Szulczewski G Nuccio L Gillin WP
Physica Status Solidi B-Basic Solid State Physics vol. 249 (1), 9-17.
01-01-2012
Modeling of positive and negative organic magnetoresistance in organic light-emitting diodesZhang S Rolfe NJ Desai P Shakya P Drew AJ Kreouzis T Gillin WP
Physical Review B vol. 86 (7)
01-01-2012
2011
Front Cover: The role of interfaces in organic spin valves revealed through spectroscopic and transport measurements (Phys. Status Solidi B 1/2012)Drew AJ Szulczewski G Nuccio L Gillin WP
Physica Status Solidi (B), Wiley vol. 249 (1)
12-12-2011
Importance of intramolecular electron spin relaxation in small molecule semiconductorsSchulz L Willis M Nuccio L Shusharov P Fratini S Pratt FL Gillin WP Kreouzis T et al.
Phys Rev B vol. 84 (8)
26-08-2011
Efficient white light emission by upconversion in Yb(3+)-, Er(3+)- and Tm(3+)-doped Y2BaZnO5.Etchart I Bérard M Laroche M Huignard A Hernández I Gillin WP Curry RJ
Chem Commun (Camb) vol. 47 (22), 6263-6265.
14-06-2011
The effect of deuteration on organic magnetoresistanceRolfe NJ Heeney M Wyatt PB Drew AJ Kreouzis T Gillin WP
SYNTHETIC METALS. vol. 161 (7-8), 608-612.
01-04-2011
Modelling of organic magnetoresistance as a function of temperature using the triplet polaron interactionZhang SJ Drew AJ Kreouzis T Gillin WP
SYNTHETIC METALS. vol. 161 (7-8), 628-631.
01-04-2011
Oxide phosphors for light upconversion; Yb3+ and Tm3+ co-doped Y2BaZnO5Etchart I Hernandez I Huignard A Laroche M Gillin WP
J Appl Phys vol. 109 (6)
15-03-2011
Engineering spin propagation across a hybrid organic/inorganic interface using a polar layer.Schulz L Nuccio L Willis M Desai P Shakya P Kreouzis T Malik VK Bernhard C et al.
Nat Mater vol. 10 (3)
01-03-2011
Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film TransistorsAdamopoulos G Bashir A Gillin WP Georgakopoulos S Shkunov M Stingelin N
Adv Funct Mater vol. 21 (3), 525-531.
08-02-2011
Efficient oxide phosphors for light upconversion; green emission from Yb3+ and Ho3+ co-doped Ln(2)BaZnO(5) (Ln = Y, Gd)Etchart I Hernandez I Huignard A Berard M Gillin WP
J Mater Chem vol. 21 (5), 1387-1394.
01-01-2011
Engineering spin propagation across a hybrid organic/inorganic interface using a polar layer.Schulz L Nuccio L Willis M Desai P Shakya P Kreouzis T Malik VK Bernhard C et al.
Nat Mater vol. 10 (1), 39-44.
01-01-2011
2010
Cooperative infrared to visible up conversion in Tb3+, Eu3+, And Yb3+ containing polymers.Hernández I Pathumakanthar N Wyatt PB Gillin WP
Adv Mater vol. 22 (47), 5356-5360.
14-12-2010
Determining the influence of excited states on current transport in organic light emitting diodes using magnetic field perturbationGillin WP Zhang SJ Rolfe NJ Desai P Shakya P Drew AJ Kreouzis T
Phys Rev B vol. 82 (19)
23-11-2010
Spray-deposited Li-doped ZnO transistors with electron mobility exceeding 50 cm²/Vs.Adamopoulos G Bashir A Thomas S Gillin WP Georgakopoulos S Shkunov M Stingelin N Maher RC
Adv Mater vol. 22 (42), 4764-4769.
09-11-2010
Effect of excited states and applied magnetic fields on the measured hole mobility in an organic semiconductorSong JY Stingelin N Drew AJ Kreouzis T Gillin WP
Phys Rev B vol. 82 (8)
20-08-2010
The importance of intra-molecular electron spin relaxation in small
molecular semiconductorsSchulz L Willis M Nuccio L Shusharov P Fratini S Pratt FL Gillin WP Kreouzis T et al.
14-06-2010
The importance of intra-molecular electron spin relaxation in small molecular semiconductorsSchulz L Willis M Nuccio L Shusharov P Fratini S Pratt FL Gillin WP Kreouzis T et al.
In Arxiv
14-06-2010
The Effect of Injection Layers on a Room Temperature Organic Spin ValveDhandapani D Morley NA Gibbs MRJ Kreouzis T Shakya P
IEEE T Magn vol. 46 (6), 1307-1310.
01-06-2010
High-pressure study of non-radiative de-excitation mechanisms in perfluorinated organic erbium(III) phosphinatesHernandez I Tan RHC Wyatt PB Gillin WP Takemura K
INTERNATIONAL CONFERENCE ON HIGH PRESSURE SCIENCE AND TECHNOLOGY, JOINT AIRAPT-22 AND HPCJ-50. vol. 215
01-01-2010
Oxide phosphors for efficient light upconversion: Yb3+ and Er3+ co-doped Ln(2)BaZnO(5) (Ln = Y, Gd)Etchart I Huignard A Berard M Nordin MN Gillin WP
J Mater Chem vol. 20 (19), 3989-3994.
01-01-2010
2009
Elucidating the role of hyperfine interactions on organic magnetoresistance using deuterated aluminium tris(8-hydroxyquinoline)Rolfe NJ Heeney M Wyatt PB Drew AJ Kreouzis T Gillin WP
Phys Rev B vol. 80 (24)
01-12-2009
Spectroscopic study of Mq(3) (M = Al, Ga, In, q=8-hydroxyquinolinate) at high pressureHernandez I Gillin WP
JOURNAL OF LUMINESCENCE. vol. 129 (12), 1835-1839.
01-12-2009
Influence of high hydrostatic pressure on Alq3, Gaq3, and Inq3 (q = 8-hydroxyquinoline).Hernández I Gillin WP
J Phys Chem B vol. 113 (43), 14079-14086.
29-10-2009
Measurement of the intersystem crossing rate in aluminum tris(8-hydroxyquinoline) and its modulation by an applied magnetic fieldZhang SJ Song JY Kreouzis T
J Appl Phys vol. 106 (4)
15-08-2009
Erbium bis(pentafluorophenyl)phosphinate: a new hybrid material with unusually long-lived infrared luminescence (vol 20, pg S430, 2009)Zheng Y Pearson J Tan RHC Gillin WP Wyatt PB
J Mater Sci-Mater El vol. 20 (8), 788-788.
01-08-2009
Elucidating the role of hyperfine interactions on organic magnetoresistance using deuterated aluminium tris(8-hydroxyquinoline)Rolfe NJ Heeney M Wyatt PB Drew AJ Kreouzis T Gillin WP
In Arxiv
20-07-2009
Nonradiative de-excitation mechanisms in long-lived erbium(III) organic compounds ErxY1-x[(p-CF3-C6F4)2PO2]3.Hernández I Tan RHC Pearson JM Wyatt PB Gillin WP
J Phys Chem B vol. 113 (21), 7474-7481.
28-05-2009
Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotationDrew AJ Hoppler J Schulz L Pratt FL Desai P Shakya P Kreouzis T Gillin WP et al.
Nat Mater vol. 8 (2), 109-114.
01-02-2009
Erbium bis(pentafluorophenyl) phosphinate: a new hybrid material with unusually long-lived infrared luminescenceZheng Y Pearson J Tan RHC Gillin WP Wyatt PB
Journal of Materials Science-Materials in Electronics vol. 20, 430-434.
01-01-2009
2008
Reduced hole mobility due to the presence of excited states in poly-(3-hexylthiophene)Song JY Stingelin N Gillin WP
Appl Phys Lett vol. 93 (23)
08-12-2008
The effect of applied magnetic field on photocurrent generation in poly-3-hexylthiophene:[6,6]-phenyl C61-butyric acid methyl ester photovoltaic devicesShakya P Desai P Kreouzis T Tuladhar SM Ballantyne AM
Journal of Physics-Condensed Matter vol. 20 (45)
12-11-2008
Separating the roles of electrons and holes in the organic magnetoresistance of aluminum tris(8-hydroxyquinoline) organic light emitting diodesRolfe N Shakya P Kreouzis T
J Appl Phys vol. 104 (8)
15-10-2008
The magnetic field effect on the transport and efficiency of group III tris(8-hydroxyquinoline) organic light emitting diodesShakya P Desai P Somerton M Gannaway G
J Appl Phys vol. 103 (10)
15-05-2008
Improved electron injection into Alq(3) based devices using a thin Erq(3) injection layerShakya P Desai P Curry RJ
J Phys D Appl Phys vol. 41 (8)
21-04-2008
Near IR luminescent rare earth 3,4,5,6-tetrafluoro-2-nitrophenoxide complexes: Synthesis, X-ray crystallography and spectroscopyZheng YX Motevalli M Tan RHC Abrahams I Gillin WP Wyatt PB
Polyhedron vol. 27 (5), 1503-1510.
07-04-2008
Intrinsic mobility limit for anisotropic electron transport in Alq(3)Drew AJ Pratt FL Hoppler J Schulz L Malik-Kumar V Morley NA Desai P Shakya P et al.
Phys Rev Lett vol. 100 (11)
21-03-2008
Evidence for erbium-erbium energy migration in erbium(III) bis(perfluoro-p-tolyl)phosphinateTan RHC Pearson JM Zheng Y Wyatt PB Gillin WP
Appl Phys Lett vol. 92 (10)
10-03-2008
Magnetoresistance in triphenyl-diamine derivative blue organic light emitting devicesShakya P Desai P Gillin WP
J Appl Phys vol. 103 (4)
15-02-2008
Separating the roles of electrons and holes in the organic magnetoresistance of aluminum tris(8-hydroxyquinoline) organic light emitting diodesRolfe N Shakya P Kreouzis T Gillin WP
Journal of Applied Physics vol. 104
01-01-2008
2007
Magnetoresistance in organic light-emitting diode structures under illuminationDesai P Shakya P Kreouzis T
Phys Rev B vol. 76 (23)
01-12-2007
The role of magnetic fields on the transport and efficiency of aluminum tris(8-hydroxyquinoline) based organic light emitting diodesDesai P Shakya P Gillin WP
J Appl Phys vol. 102 (7)
01-10-2007
Near-infrared photoluminescence of erbium tris(8-hydroxyquinoline) spin-coated thin films induced by low coherence light sourcesPenna S Reale A Pizzoferrato R Beleffi GMT
Appl Phys Lett vol. 91 (2)
09-07-2007
Magnetoresistance and efficiency measurements of Alq(3)-based OLEDsDesai P Shakya P Gillin WP Morley NA
Phys Rev B vol. 75 (9)
01-03-2007
Magnetoresistance and efficiency measurements of Alq3-based OLEDsGILLIN WP
Phys. Rev. B vol. 75, 094423-094429.
01-02-2007
Novel infrared emitter for low cost optical devicesPenna S Reale A Pizzoferrato R Maria G Beleffi T Marciniak M
ICTON 2007: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 1., 208-211.
01-01-2007
Characterization of interdiffusion around miscibility gap of lattice matched InGaAs/InP quantum wells by high resolution x-ray diffractionBollet F
J Appl Phys vol. 101 (1)
01-01-2007
2006
Quenching of IR luminescence of erbium, neodymium, and ytterbium beta-diketonate complexes by ligand C-H and C-D bondsTan RHC Motevalli M Abrahams I Wyatt PB Gillin WP
J Phys Chem B vol. 110 (48), 24476-24479.
07-12-2006
Quenching of IR Luminescence of Erbium, Neodymium, and Ytterbium alpha-Diketonate Complexes by Ligand C-H and C-D BondsWyatt P Abrahams I GILLIN WP Tan RHC Motevalli M
Journal of Physical Chemistry B vol. 110 (48), 24476-24479.
01-12-2006
Quenching of Er(III) luminescence by ligand C-H vibrations: Implications for the use of erbium complexes in telecommunicationsWinkless L Tan RHC Zheng Y Motevalli M Wyatt PB Gillin WP
Appl Phys Lett vol. 89 (11)
11-09-2006
Photoluminescence relaxation kinetics in vapor etched porous silicon - art. no. 63441AKaravanskii V Gillin W Sapelkin A Shcherbakov IA Wang Q Priezzhev AV Pustovoy VI
Advanced Laser Technologies 2005, Pts 1 and 2. vol. 6344, A3441-A3441.
01-01-2006
2005
Measurement of the size effect in the yield strength of nickel foilsMoreau P Raulic M P'ng KMY Gannaway G Anderson P Gillin WP Bushby AJ Dunstan DJ
Phil Mag Lett vol. 85 (7), 339-343.
01-07-2005
Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopyBollet F Gillin WP Hopkinson M
J Appl Phys vol. 97 (1)
01-01-2005
2004
Time-resolved photoluminescence excitation characterisation of lanthanide and group III tris-(8-hydroxyquinoline) moleculesDesai P Somerton M Curry RJ
Ieice T Electron vol. E87C (12), 2023-2027.
01-12-2004
Electrolummescence from (5)Do -> F-7(J) and D-5(1) -> F-7(J) (J=0-4) transitions with a europium complex as emitterZheng YX Zhou YH Yu JB Yu YN Zhang HJ
J Phys D Appl Phys vol. 37 (4), 531-534.
21-02-2004
2003
III-V semiconductors solve mechanical riddleDunstan D BUSHBY AJ Gillin W
III-Vs Review vol. 16 (9), 39-41.
01-12-2003
Photoluminescence and x-ray diffraction studies of the diffusion behavior of lattice matched InGaAs/InP heterostructuresBollet F
J Appl Phys vol. 94 (2), 988-992.
15-07-2003
On the diffusion of lattice matched InGaAs/InP microstructuresBollet F Gillin WP Hopkinson M
J Appl Phys vol. 93 (7), 3881-3885.
01-04-2003
2002
Morphological study of aluminum tris(8-hydroxyquinoline) thin films using infrared and Raman spectroscopyCurry RJ Gillin WP Clarkson J
J Appl Phys vol. 92 (4), 1902-1905.
15-08-2002
A new laser pain threshold model detects a faster onset of action from a liquid formulation of 1 g paracetamol than an equivalent tablet formulationSutton JA Gillin WP Clarke GD
Brit J Clin Pharmaco vol. 53 (1), 43-47.
01-01-2002
2001
Electroluminescence of organolanthanide based organic light emitting diodesCurry RJ
Curr Opin Solid St M vol. 5 (6), 481-486.
01-12-2001
1.5 mu m electroluminescence from organic light emitting diodes integrated on silicon substratesCurry RJ Gillin WP Gwilliam R
OPTICAL MATERIALS. vol. 17 (1-2), 161-163.
01-06-2001
980 nm electroluminescence from ytterbium tris(8-hydroxyquinoline)Khreis OM Gillin WP Curry RJ
Organic Electronics, Elsevier/Science Direct vol. 2 (1), 45-51.
01-01-2001
2000
Infra-red and visible electroluminescence from ErQ based OLEDsCurry RJ
SYNTHETIC METALS. vol. 111, 35-38.
01-06-2000
1.5 μm luminescence from ErQ based organic light emitting diodesCurry RJ Gillin WP
FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES. vol. 558, 481-484.
01-01-2000
The photoluminescence temperature dependence of aluminium tris(8-hydroxyquinoline) as a function of excitation energyCurry RJ Gillin WP
FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES. vol. 558, 421-426.
01-01-2000
Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μmCurry RJ Knights AP Gwilliam R
Applied Physics Letters vol. 77 (15), 2271-2273.
01-01-2000
Radiative recombination mechanisms in aluminum tris(8-hydroxyquinoline):: Evidence for triplet exciton recombinationCurry RJ
Journal of Applied Physics vol. 88 (2), 781-785.
01-01-2000
Infrared organic light emitting diodes using neodymium tris-(8-hydroxyquinoline)Khreis OM Curry RJ Somerton M
Journal of Applied Physics vol. 88 (2), 777-780.
01-01-2000
Organolanthanide based infrared light emitting devicesGillin WP Taylor EW
PHOTONICS FOR SPACE ENVIRONMENTS VII. vol. 4134, 159-166.
01-01-2000
Hybrid silicon-organic light emitting diodes for 1.5 mu m optoelectronicsCurry RJ Gillin WP Knights AP Gwilliam R Kafafi ZH
ORGANIC LIGHT-EMITTING MATERIALS AND DEVICES IV. vol. 4105, 265-271.
01-01-2000
1999
1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodesCurry RJ Gillin WP
Applied Physics Letters vol. 75 (10), 1380-1382.
06-09-1999
1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodesCurry RJ
Applied Physics Letters vol. 75 (10), 1380-1382.
01-01-1999
Erbium (III) tris(8-hydroxyquinoline) (ErQ):: A potential material for silicon compatible 1.5 μm emittersGillin WP Curry RJ
Applied Physics Letters vol. 74 (6), 798-799.
01-01-1999
1.5 μm luminescence from ErQ based organic light emitting diodesCurry RJ Gillin WP
ORGANIC NONLINEAR OPTICAL MATERIALS AND DEVICES. vol. 561, 211-214.
01-01-1999
Effect of strain on the interdiffusion of InGaAs/GaAs heterostructuresGillin WP
Journal of Applied Physics vol. 85 (2), 790-793.
01-01-1999
1.5 µm Luminescence from ErQ Based Organic Light Emitting DiodesCurry RJ Gillin WP
MRS Advances. vol. 558 (1), 481-484.
01-01-1999
1998
Erbium in silicon–germanium quantum wellsNaveed AT Huda MQ El-Rahman KFA Hartung J Evans-Freeman JH Houghton DC Gillin WP
Journal of Luminescence, Elsevier vol. 80 (1-4), 381-386.
01-12-1998
Diffusion in semiconductorsGillin WP Dunstan DJ
COMPUTATIONAL MATERIALS SCIENCE. vol. 11 (2), 96-100.
01-01-1998
Intermixing in GaAsSb/GaAs single quantum wellsKhreis OM Homewood KP Singer KE
Journal of Applied Physics vol. 84 (7), 4017-4019.
01-01-1998
Interdiffusion in InGaAs/GaAs: The effect of growth conditionsKhreis OM Homewood KP
Journal of Applied Physics vol. 84 (1), 232-236.
01-01-1998
Contactless electro-reflectance study of interdiffusion in heat-treated GaAs1-xSbx/GaAs single quantum wellsGhosh S Arora BM Homewood KP Singer KE
Journal of Physics-Condensed Matter vol. 10 (43), 9865-9874.
01-01-1998
Evidence for non-equilibrium vacancy concentrations controlling interdiffusion in III-V materialsGillin WP Khreis OM Homewood KP
DIFFUSION MECHANISMS IN CRYSTALLINE MATERIALS. vol. 527, 401-406.
01-01-1998
1997
Strong luminescence from erbium in Si/Si1-xGex/Si quantum well structuresHuda MQ Peaker AR Houghton DC GILLIN WP
Electron. Letts. vol. 33, 1182-1183.
31-12-1997
The activation energy for GaAs/AlGaAs interdiffusionWee SF Chai MK Gillin WP
Journal of Applied Physics vol. 82 (10), 4842-4846.
01-01-1997
Interdiffusion: A probe of vacancy diffusion in III-V materialsKhreis OM Gillin WP
Physical Review B vol. 55 (23), 15813-15818.
01-01-1997
The Fermi level effect in III-V intermixing: The final nail in the coffin?Jafri ZH
Journal of Applied Physics vol. 81 (5), 2179-2184.
01-01-1997
1996
An optical study of interdiffusion in ZnSe/ZnCdSeChai MK Wee SF Homewood KP Gillin WP
Applied Physics Letters vol. 69 (11), 1579-1581.
01-01-1996
Meander Type LPE and High Temperature Stability of Elastically Strained GalnAsp/InP LayersNohavica D Gillin WP Lourenco MA Yang Z
In Heterostructure Epitaxy and Devices, Springer Nature 61-64.
01-01-1996
1995
Comparative study of silicon nitride and phosphine overpressure annealing on the interdiffusion of InGaAsP/InGaAs heterostructuresGILLIN WP Perrin S Homewood KP
Journal of Applied Physics vol. 77, 1463-1465.
31-12-1995
Control of defect in C+, Ge+, and Er+ implanted Si using post amorphisation and solid phase regrowth.Cristiano F Zhang JP Wilson RJ GILLIN WP
Nuclear Instruments and Methods B vol. 96, 265-270.
31-12-1995
The Effect of Co-Dopants on the Photoluminescence of Er3+ in SiliconPradissitto JJ Federighi M Gillin WP James AG
MRS Advances. vol. 392 (1), 217-222.
01-01-1995
1994
Diffusion of ion beam created vacancies and their effect on intermixing; a Gambler’s Ruin approachGILLIN WP Kimber AC Dunstan DJ Webb RP
Journal of Applied Physics vol. 76, 3367-3371.
31-12-1994
Interdiffusion and thermally induced strain relaxation in GaAs/InGaAs/GaAs single quantum well structuresKozanecki A Sealy BJ GILLIN WP
Nuclear Instruments and Methods in Physics Research B, 192-196.
31-12-1994
Characterisation of thermally annealed InGaAs/GaAs single quantum wells by optical spectroscopy and ion beam techniquesKozanecki A
Applied Physics Letters vol. 64, 40-42.
31-12-1994
Thermally induced change in the profile of GaAs/AlGaAs quantum wellsPeyre H Camassel J Gillin WP
Materials Science and Engineering B, Elsevier vol. 28 (1-3), 332-336.
01-12-1994
Interdiffusion of the group-III sublattice in In-Ga-As-P/In-Ga-As-P and In-Ga-As/In-Ga-As heterostructures.Rao SS Gillin WP
Phys Rev B Condens Matter vol. 50 (11), 8071-8073.
15-09-1994
Strain and interdiffusion in semiconductor heterostructures.Gillin WP Dunstan DJ
Phys Rev B Condens Matter vol. 50 (11), 7495-7498.
15-09-1994
1993
Vacancy controlled interdiffusion in III-V heterostructuresGILLIN WP Bradley IV Rao SS Homewood KP Sealy BJ Howard LK
Material Science and Engineering 8, 281-283.
31-12-1993
Thermally induced intermixing of InGaAs/GaAs single quantum wellsKozanecki A
Acta Physica Polonica A vol. 84, 621-624.
31-12-1993
Vacancy controlled interdiffusion of the Group V sublattice in strained In0.66Ga0.33As/In0.66Ga0.33As0.7P0.3 quantum wellsGILLIN WP Rao SS Homewood KP smith AD
Applied Physics Letters vol. 63, 797-799.
31-12-1993
The effects of silicon and beryllium on the interdiffusion of GaAs/AlGaAs and InGaAs/GaAs quantum well structures.GILLIN WP Bradley IV Howard LK Gwilliam R
Journal of Applied Physics vol. 73, 7715-7719.
31-12-1993
Comparison of the effects of ion implantation induced interdiffusion in GaAs/AlGaAs and InGaAs/GaAs single quantum wellsBradley IV GILLIN WP Homewood KP Grey R
Nuclear Instruments and Methods in Physics Research B vol. 80, 747-750.
31-12-1993
Interdiffusion in InGaAs/GaAs quantum well structures as a function of depthGILLIN WP Dunstan DJ Homewood KP Howard LK
Journal of Applied Physics vol. 73, 3782-3786.
31-12-1993
The effect of gallium implantation on the intermixing of InGaAs/GaAs strained quantum wellsGILLIN WP Bradley IV Webb RP
Solid State Communications vol. 85, 197-198.
31-12-1993
The effects of ion implantation on the interdiffusion coefficient in InGaAs/GaAs quantum well structuresBradley IV GILLIN WP Homewood KP
Journal of Applied Physics vol. 73, 1686-1692.
31-12-1993
Thermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum WellsKozanecki A Gillin WP Sealy BJ
Materials Science Forum, Trans Tech Publications vol. 143-147, 605-610.
01-10-1993
Effect of thermal diffusion on the excitonic reflectivity spectra of InGaAs/GaAs quantum wellsGILLIN WP PEYRE H CAMASSEL J BRADLEY IV GREY R
The European Physical Journal Special Topics. vol. 03 (C5)
01-10-1993
Interdiffusion in InGaAs/GaAs quantum well structures as a function of depthGillin WP Dunstan DJ Homewood KP Howard LK Sealy BJ
Journal of Applied Physics, Aip Publishing vol. 73 (8), 3782-3786.
15-04-1993
The effect of the thermal interdiffusion on the excitonic reflectivity spectra of InGaAs/GaAs quantum well structuresGILLIN WP Peyre H Camassel J Homewood KP Bradley IV
Journal De Physique Iv vol. 3, 291-294.
01-01-1993
Group V interdiffusion in In0.66Ga0.33As/ In0.66Ga0.33 As0.7P0.3 quantum well structuresGillin WP Bradley IV Foo WI Perrin SD
1993 IEEE 5th International Conference on Indium Phosphide and Related Materials., 33-35.
01-01-1993
Group V interdiffusion in In/sub 0.66/Ga/sub 0.33/As/ In/sub 0.66/Ga/sub 0.33/As/sub 0.7/P/sub 0.3/ quantum well structuresGillin WP Bradley IV Foo WL Homewood KP Perrin SD Spurdens PC
1993 (5th) International Conference on Indium Phosphide and Related Materials., 33-35.
01-01-1993
Vacancy controlled interdiffusion in III–V heterostructuresGillin WP Bradley IV Rao SS Homewood KP Smith AD Briggs ATR
In Semiconductor Materials For Optoelectronics and Ltmbe Materials, Proceedings of Symposium a on Semiconductor Materials For Optoelectronic Devices, Oeics and Photonics and Symposium B on Low Temperature Molecular Beam Epitaxial III–V Materials: Physics and Applications of The 1993 E-Mrs Spring Conference, Elsevier 281-283.
01-01-1993
1992
Reactive formation of cobalt silicide on single crystal silicon under rapid electron beam heatingMahmood F Ahmed H Jeynes CJ
Applied Surface Science vol. 59, 55-63.
31-12-1992
Photoluminescence of acceptor states in mercury implanted gallium arsenideGILLIN WP
Journal of Applied Physics vol. 71, 2021-2022.
31-12-1992
Effect of controlled vacancy injection by ion implantation on the intermixing of InGa/GaAs quantum wellsGillin WP Homewood KP
Emerging Optoelectronic Technologies. vol. 1622, 54-57.
16-12-1992
1991
Rutherford backscattering and secondary ion mass spectrometry studies of Er implanted siliconGILLIN WP Zhang JP
Solid State Communications vol. 77, 907-910.
31-12-1991
Photoluminescence of deep levels in S implanted AlGaAsGILLIN WP Homewood KP Sealy BJ
Applied Physics Letters vol. 58, 1404-1406.
31-12-1991
Thermal interdiffusion in InGaAs/GaAs strained quantum wells as a function of doping densityGILLIN WP Homewood KP Howard LK
Superlattices and Microstructures vol. 9, 39-42.
31-12-1991
Thermal interdiffusion in InGaAs/GaAs and GaAsSb/GaAs strained quantum wells as a function of doping densityGILLIN WP Sealy BJ
Optical and Quantum Electronics vol. 23, S975-S980.
31-12-1991
Lattice site location and out diffusion of Hg implanted GaAsSoares JC Melo AA Alves E da Silva MF
Nuclear Instruments and Methods in Physics Research B vol. 59, 1090-1093.
31-12-1991
Erratum: Disorder-induced mixing of InGaAs/InP multiple quantum wells by phosphorus implantation for optical wave-guides (Semiconductor Science and Technology (1990) 5 (1063-1066)Whitehead NJ Gillin WP Bradley IV
Semiconductor Science and Technology vol. 6 (11)
01-12-1991
1990
Thermal processing of GaAsSb/GaAs low dimensional strained layer structuresHomewood KP Pritchard RE Truscott WS
Superlattices and Microstructures vol. 7, 359-361.
31-12-1990
Disorder induced mixing of InGaAs/InP MQW by phosphorus implantation for optical waveguidesWhitehead NJ GILLIN WP Bradley IV Weiss BL
Semiconductor Science and Technology vol. 5, 1063-1066.
31-12-1990
Thermal processing of strained GaInAs/GaAs high hole mobility transistor structuresGILLIN WP Tang YS Whitehead NJ Sealy BJ Emeny MT Whitehouse CR
Applied Physics Letters vol. 56, 1116-1118.
31-12-1990
Optical waveguides formed in InGaAs/InP multi quantum wells by phosphorous implantationWhitehead NJ Gillin WP Bradley IV Weiss BL
IEE Colloquium Digest. (103)
01-12-1990
Disorder-induced mixing of InGaAs/InP multiple quantum wells by phosphorus implantation for optical wave-guidesWhitehead NJ Gillin WP Bradley IV
Semiconductor Science and Technology, Iop Publishing vol. 5 (11)
01-11-1990
1989
Abrupt p+ layers in GaAs by 200ºC Hg implantationTang ACT Gardner SR Sealy BJ
Electronics Letters vol. 25, 1618-1619.
31-12-1989
The use of Hall effect profiling to monitor the reactivation of silicon implants after oxygen implants in GaAsWhitehead NJ GILLIN WP Sealy BJ
Vacuum vol. 39, 1149-1151.
31-12-1989
The effects of air-semiconductor depletion on Hall effect profiling of ion implanted semiconductorsWhitehead NJ GILLIN WP Sealy BJ
Solid State Electronics vol. 32, 1045-1047.
31-12-1989
Characteristics of rare earth element erbium implanted in silicontang YS heasman KC GILLIN WP Sealy BJ
Applied Physics Letters vol. 55, 432-433.
31-12-1989
Optical Waveguides In GaAlAs/GaAs And GalnAs/InP Multiquantum Well StructuresWeiss BL Wismayer AC
Integrated Optics and Optoelectronics. vol. 1177, 387-390.
05-09-1989
Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performanceHatch SM Briscoe J Sapelkin A Gillin WP Gilchrist JB Ryan MP Heutz S Dunn S
Journal of Applied Physics
Analysis of strain in ultra-thin GaAs/In0.2Ga0.8As/GaAs single quantum well structures by channeling techniqueGILLIN WP Kozanecki A Kacanowski J Sealy BJ
Nuclear Instruments and Methods B vol. 118, 640-664.
Carbon Nanotubes-Quantum Dot Nanohybrids: Coupling with Single Particle Control in Aqueous SolutionPALMA M
Small, Wiley: 12 Months
Optoelectronic devices, methods of fabrication thereof and materials thereforGILLIN W WYATT P Hernandez I
Patent US 9837794 B2.
Grants
Grants of specific relevance to the Centre for Chemical Research
KTP With Paragraf: Graphene-Organic Devices for Smart DisplaysOliver Fenwick and William Gillin
£238,656 Innovate UK
01-04-2021 - 30-11-2023
Organic Rare-Earth Single Photon Sources for Quantum Information TechnologyWilliam Gillin
£199,902 EPSRC Engineering and Physical Sciences Research Council
29-03-2021 - 28-03-2022
Replacing Indium Tin Oxide (ITO) with next-generation graphene in electronic devicesColin Humphreys and William Gillin
£159,316 Innovate UK
01-01-2019 - 30-09-2020
Centre for Advanced MaterialsWilliam Gillin and Christian Nielsen
£157,625 Engineering and Physical Sciences Research Council
01-12-2016 - 30-11-2022
Research Group
PhD Students
- Fa Zhang
Deep Level Transient Spectroscopy in Semiconductor Devices
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