Prof Colin Humphreys

Weng Z, Dixon S, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2023). Wafer-scale transfer-free graphene as an ITO replacement for OLEDs. 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC). 
25-10-2023

Humphreys C (2022). From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 28 (S1), 2736-2737.  
01-08-2022

Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ and Humphreys CJ (2022). Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene. Physical Review B, American Physical Society vol. 105 (16) 
13-04-2022

Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2022). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022). Advanced Optical Materials vol. 10 (3), 2270012-2270012.  
05-02-2022

Saifullah MSM, Boothroyd CB, Botton GA and Humphreys CJ (2022). Electron beam damage in titanium dioxide films. 
05-01-2022

Campbell LCI, Foord DT and Humphreys CJ (2022). ‘Nano-machining’ using a focused ion beam. 
05-01-2022

Natusch MKH, Botton GA, Humphreys CJ and Krivanek OL (2022). Modelling of electron energy-loss spectroscopy detection limits. 
05-01-2022

Pekarskaya E, Botton GA, Jones CN and Humphreys CJ (2022). Martensitic transformation and characterisation of the structure of a NiAl - Ni3Al alloy. 
05-01-2022

Humphreys C (2022). Electron microscopy and analysis: the future. 
05-01-2022

Walther T and Humphreys CJ (2022). Quantification of the composition of silicon germanium / silicon structures by high-angle annular dark field imaging. 
05-01-2022

Hölzl M, Bottond GA, Nelhiebel M, Humphreys CJ, Jouffrey B, Grogger W, Hofer F and Schattschneider P (2022). Observation of the mixed dynamic form factor in the Ag M4,5-edge. 
05-01-2022

Sun YW, Gehringer D, Holec D, Papageorgiou DG, Fenwick O, Qureshi SM, Humphreys CJ and Dunstan DJ (2022). Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials. Physical Review B, American Physical Society vol. 105 (2) 
05-01-2022

Tricker DM, Brown PD, Xin Y, Cheng TS, Foxon CT and Humphreys CJ (2022). The relationship between epitaxial growth, defect microstructure and luminescence in GaN. Electron Microscopy and Analysis 1997  429-432.  
05-01-2022

Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2021). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes. Advanced Optical Materials, Wiley, 2101675-2101675.  
20-12-2021

Pristovsek M, Frentrup M, Zhu T, Kusch G and Humphreys CJ (2021). X-ray characterisation of the basal stacking fault densities of (112̄2) GaN. CrystEngComm, Royal Society of Chemistry vol. 23 (35), 6059-6069.  
03-08-2021

Sun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C and Dunstan DJ (2021). Mechanical Properties of Graphene. Applied Physics Reviews, AIP Publishing 
19-04-2021

Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ and Humphreys CJ (2021). Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]. Physical Review B vol. 103 (11), 119901-119901.  
01-03-2021

Kvam EP, Eaglesham DJ, Humphreys CJ, Maher DM, Bean JC and Eraser HL (2021). Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100). Microscopy of Semiconducting Materials, 1987  165-168.  
31-01-2021

Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG and Humphreys CJ (2020). Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites. Scientific Reports, Nature Publishing Group vol. 10 
24-09-2020

Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM, Humphreys CJ and Su L (2020). Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films. ACS Nano, American Chemical Society 
27-08-2020

S N, Guiney I, Humphreys CJ, Sen P, Muralidharan R and Nath DN (2020). Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 38 (3) 
09-04-2020

Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D and Humphreys C (2020). Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers. Physical Review B: Condensed Matter and Materials Physics, American Physical Society vol. 101 
20-03-2020

Halsall MP, Crowe I, Oliver R, Kappers MJ and Humphreys CJ (2020). Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation). Gallium Nitride Materials and Devices XV. 
10-03-2020

Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2019). A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. physica status solidi (a) – applications and materials science, Wiley vol. 217 (7) 
29-12-2019

Zhou B, Das A, Kappers M, Oliver R, Humphreys C and Krause S (2019). InGaN as a substrate for AC photoelectrochemical imaging. Sensors, MDPI 
11-10-2019

Griffiths JT, Rivarola FWR, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY, De La Pena F, Price MB, Howkins A, Boyd I, Humphreys CJ, Greenham NC and Ducati C (2019). Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals. ACS Applied Energy Materials, American Chemical Society (ACS) vol. 2 (10), 6998-7004.  
07-10-2019

Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ and Humphreys C (2019). 3D strain in 2D materials: to what extent is monolayer graphene graphite? Physical Review Letters, American Physical Society vol. 123, 135501-135501.  
25-09-2019

Tang F, Zhu T, Fu W-Y, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL, Bagot PAJ, Moody MP, Patra SK, Schulz S, Dawson P, Church S, Jacobs J and Oliver RA (2019). Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates. Journal of Applied Physics, AIP Publishing vol. 125 (22) 
11-06-2019

Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G, Edwards PR, Kappers MJ, McAleese C, Moram MA, Humphreys CJ, Dawson P and Oliver RA (2019). Optical and structural properties of dislocations in InGaN. Journal of Applied Physics, AIP Publishing vol. 125 (16) 
23-04-2019

Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA and Dawson P (2019). Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength. JAPANESE JOURNAL OF APPLIED PHYSICS vol. 58 
23-04-2019

Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ and Dunstan DJ (2019). Effect of humidity on the interlayer interaction of bilayer graphene. Physical Review B vol. 99 (4) 
02-01-2019

Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2018). Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 66 (1), 613-618.  
07-12-2018

Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA and Humphreys CJ (2018). What is red? On the chromaticity of orange-red InGaN/GaN based LEDs. Journal of Applied Physics, AIP Publishing vol. 124 (18) 
09-11-2018

Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ and Humphreys CJ (2018). Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells. ACS Photonics, American Chemical Society (ACS) vol. 5 (11), 4437-4446.  
17-10-2018

Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA and Dawson P (2018). Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. Physical Review B, American Physical Society (APS) vol. 98 (15) 
01-10-2018

Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R and Dawson P (2018). Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. Materials, MDPI vol. 11 (9) 
15-09-2018

Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ and Wallis DJ (2018). Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. Journal of Applied Physics, AIP Publishing vol. 124 (10) 
11-09-2018

Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ, Oliver RA and Wallis DJ (2018). Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics, AIP Publishing vol. 124 (5) 
03-08-2018

Humphreys C and Waddington G (2018). Response to letter from Wayne Osborn. Astronomy and Geophysics vol. 59 (4) 
01-08-2018

Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE and Oliver RA (2018). Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 24 (S1), 4-5.  
01-08-2018

Cho S, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C and Thayne IG (2018). Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs. Electronics Letters, Institution of Engineering and Technology (IET) vol. 54 (15), 947-949.  
01-07-2018

Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P, Wallis DJ, Humphreys CJ, Chalker PR and Houston PA (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics, AIP Publishing vol. 123 (18) 
14-05-2018

Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P (2018). Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. Journal of Applied Physics, AIP Publishing vol. 123 (18) 
10-05-2018

Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ and Dawson P (2018). Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures. Journal of Physics Condensed Matter, IOP Publishing vol. 30 (17) 
09-04-2018

Massabuau FC-P, Chen P, Rhode SL, Horton MK, O'Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA (2018). Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties. Gallium Nitride Materials and Devices XIII. 
23-02-2018

Humphreys C and Waddington G (2018). Illuminating theory on early solar eclipse. Astronomy and Geophysics vol. 59 (1) 
01-02-2018

Nixon D, Humphreys C and Waddington G (2018). Moon village: show us the money. Astronomy & Geophysics, Oxford University Press (OUP) vol. 59 (1), 1.8-1.8.  
01-02-2018

Elliott SL, Broom RF and Humphreys CJ (2018). SEM doping contrast at a Si pn junction. 
18-01-2018

Keast VJ, Sharma N and Humphreys CJ (2018). Energy-loss spectroscopy of GaN alloys and quantum wells. 
18-01-2018

Sharma N, Kappers M, Barnard J, Vickers M and Humphreys C (2018). Chemical mapping of InGaN/GaN LEDs. 
18-01-2018

Makaronidis G, McAleese C, Barnard JS and Humphreys CJ (2018). Effects of AIN and GaN low-temperature interlayers on the dislocation behaviour of AlGaN and GaN grown by MOCVD. 
10-01-2018

Barnard JS, Kappers MJ, Thrush EJ and Humphreys CJ (2018). Electrostatic fields in InGaN/GaN single quantum wells and their variation with indium content, using off-axis holography and energy filtered TEM. 
10-01-2018

Barnard JS, Vickers ME, Kappers MJ, Thrush EJ and Humphreys CJ (2018). A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEM. 
10-01-2018

Kazemian P, Schönjahn C and Humphreys CJ (2018). Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope. 
10-01-2018

Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL, Bagot PA, Moody MP, Humphreys CJ, Houston PA, Oliver RA and Wallis DJ (2018). Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics, AIP Publishing vol. 123 (2) 
09-01-2018

Kazemian P, Schönjahn C and Humphreys CJ (2018). Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope. Microscopy of Semiconducting Materials 2003  593-596.  
01-01-2018

Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA and Humphreys CJ (2017). The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes. Journal of Applied Physics, AIP Publishing vol. 122 (23) 
21-12-2017

Xiu H, Thrush EJ, Zhao L, Phillips A and Humphreys CJ (2017). Degradation of in GaN/GaN Laser Diodes Investigated By Cross-Sectional Electron Beam Induced Current Imaging. 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS). 
01-11-2017

Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2017). Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 64 (12), 4868-4874.  
11-10-2017

Humphreys C and Waddington G (2017). Solar eclipse of 1207 BC helps to date pharaohs. Astronomy & Geophysics, Oxford University Press (OUP) vol. 58 (5), 5.39-5.42.  
01-10-2017

Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ and Johnson PA (2017). Machine Learning Predicts Laboratory Earthquakes. Geophysical Research Letters vol. 44 (18), 9276-9282.  
28-09-2017

Frentrup M, Lee LY, Sahonta S-L, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ and Wallis DJ (2017). X-ray diffraction analysis of cubic zincblende III-nitrides. Journal of Physics D, IOP Publishing vol. 50 (43) 
26-09-2017

Humphreys C (2017). Ahmed Zewail — A Towering Visionary. Personal and Scientific Reminiscences  137-139.  
04-08-2017

Rouet-Leduc B, Hulbert C, Barros K, Lookman T and Humphreys CJ (2017). Automatized convergence of optoelectronic simulations using active machine learning. Applied Physics Letters, AIP Publishing vol. 111 (4) 
24-07-2017

Floros K, Li X, Guiney I, Cho S, Hemakumara D, Wallis DJ, Wasige E, Moran DAJ, Humphreys CJ and Thayne IG (2017). Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐ and Ni‐based gate stacks. 
20-07-2017

Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA (2017). Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties. Nano Letters, American Chemical Society (ACS) vol. 17 (8), 4846-4852.  
18-07-2017

Eblabla A, Benakaprasad B, Li X, Wallis DJ, Guiney I, Humphreys C and Elgaid K (2017). Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC). 2017 18th International Radar Symposium (IRS). 
01-06-2017

Massabuau F, Kappers M, Humphreys C and Oliver R (2017). Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth. 
22-05-2017

Griffiths JT, Ren CX, Coulon P-M, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I, Martin RW, Allsopp DWE, Shields PA, Humphreys CJ and Oliver RA (2017). Structural impact on the nanoscale optical properties of InGaN core-shell nanorods. Applied Physics Letters, AIP Publishing vol. 110 (17) 
24-04-2017

Church SA, Hammersley S, Mitchell PW, Kappers MJ, Sahonta SL, Frentrup M, Nilsson D, Ward PJ, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P (2017). Photoluminescence studies of cubic GaN epilayers. 
21-02-2017

Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ, Humphreys CJ and Houston PA (2017). All-GaN-Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers (IEEE) vol. 32 (11), 8743-8750.  
17-02-2017

Guiney I, Thomas S and Humphreys CJ (2017). Single-step manufacturing process for the production of graphene-V/III LED heterostructures. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI. 
16-02-2017

Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ and Oliver RA (2017). The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. Ultramicroscopy, Elsevier vol. 176, 93-98.  
03-02-2017

Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2017). Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, Elsevier vol. 459, 185-188.  
01-02-2017

Kim J-Y, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke N-J, Langridge S, Stankiewicz R, Humphreys CJ, Cowburn RP, Holmes SN and Barnes CHW (2017). Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001). Journal of Applied Physics, AIP Publishing vol. 121 (4) 
24-01-2017

Coulon P-M, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ, Oliver RA, Allsopp DWE and Shields PA (2017). Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure. Crystal Growth & Design, American Chemical Society (ACS) vol. 17 (2), 474-482.  
11-01-2017

Massabuau F, Piot N, Frentrup M, Wang X, Avenas Q, Kappers M, Humphreys C and Oliver R (2017). X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface. 
06-01-2017

Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ, Humphreys CJ, Dunin-Borkowski RE and Oliver RA (2017). Carrier localization in the vicinity of dislocations in InGaN. Journal of Applied Physics, AIP Publishing vol. 121 (1) 
03-01-2017

Humphreys CJ (2017). Preventing cracking in the growth of low-cost GaN LEDs on large-area Si. 
01-01-2017

Smeeton T and Humphreys C (2017). Perspectives on Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials  1-1.  
01-01-2017

Griffiths J, Zhang S, Lhuillier J, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R (2016). Impact of high energy electrons on nitrides for nanocathodoluminescence. European Microscopy Congress 2016: Proceedings  1044-1045.  
20-12-2016

Griffiths J, Zhang S, Rouet‐Leduc B, Fu WY, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R (2016). Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping. European Microscopy Congress 2016: Proceedings  562-563.  
20-12-2016

Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Applied Physics Letters, AIP Publishing vol. 109 (23) 
05-12-2016

Novikov SV, Staddon CR, Sahonta S-L, Oliver RA, Humphreys CJ and Foxon CT (2016). Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth, Elsevier vol. 456, 151-154.  
01-12-2016

Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ and Graham DM (2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. Solid State Communications, Elsevier vol. 247, 68-71.  
01-12-2016

Schulz S, Tanner DSP, O'Reilly EP, Caro MA, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells. Applied Physics Letters, AIP Publishing vol. 109 (22) 
28-11-2016

Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ, Schulz S, Tang F and Oliver RA (2016). A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates. Sci Technol Adv Mater vol. 17 (1), 736-743.  
10-11-2016

Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D, Wallis DJ, Humphreys CJ and Oliver RA (2016). Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold. Journal of Applied Physics, AIP Publishing vol. 120 (16) 
28-10-2016

Benakaprasad B, Eblabla A, Li X, Elgaid K, Wallis DJ, Guiney I and Humphreys C (2016). Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC. 2016 46th European Microwave Conference (EuMC). 
01-10-2016

Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ, Leute RAR, Heinz D, Rettig O, Scholz F and Thonke K (2016). Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence. Journal of Applied Physics, AIP Publishing vol. 120 (8) 
23-08-2016

Muhammed MM, Roldan MA, Yamashita Y, Sahonta S-L, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ and Roqan IS (2016). High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer. Scientific Reports, Springer Nature vol. 6 (1) 
14-07-2016

Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D, Choi P-P, Raabe D, Brunner F and Weyers M (2016). Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0). Semiconductor Science and Technology, IOP Publishing vol. 31 (8) 
12-07-2016

Presa S, Maaskant PP, Kappers MJ, Humphreys CJ and Corbett B (2016). Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes. AIP Advances, AIP Publishing vol. 6 (7) 
01-07-2016

Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Applied Physics Letters, AIP Publishing vol. 108 (25) 
20-06-2016

Corbett B, Lymperakis L, Scholz F, Humphreys C, Brunner F and Meyer T (2016). Scalable semipolar gallium nitride templates for high-speed LEDs. SPIE Newsroom, SPIE, the international society for optics and photonics 
03-06-2016

Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique. Applied Physics Letters, AIP Publishing vol. 108 (21) 
23-05-2016

Dawson P, Schulz S, Oliver RA, Kappers MJ and Humphreys CJ (2016). The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics vol. 119 (18) 
14-05-2016

Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2016). Characterization of p-GaN1−x As x /n-GaN PN junction diodes. Semiconductor Science and Technology, IOP Publishing vol. 31 (6) 
12-05-2016

Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Kappers MJ, Humphreys CJ and Oliver RA (2016). The microstructure of non-polar a-plane (11 2 ¯0) InGaN quantum wells. Journal of Applied Physics, AIP Publishing vol. 119 (17) 
02-05-2016

Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2016). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016). physica status solidi (b), Wiley vol. 253 (5), 1024-1024.  
01-05-2016

Rouet-Leduc B, Barros K, Lookman T and Humphreys CJ (2016). Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning. Scientific Reports, Springer Nature vol. 6 (1) 
26-04-2016

Pristovsek M, Humphreys CJ, Bauer S, Knab M, Thonke K, Kozlowski G, O’Mahony D, Maaskant P and Corbett B (2016). Comparative study of (0001) and InGaN based light emitting diodes. 
15-04-2016

Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA and Humphreys CJ (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. physica status solidi (c) 
14-04-2016

Chatterjee I, Uren MJ, Pooth A, Karboyan S, Martin-Horcajo S, Kuball M, Lee KB, Zaidi Z, Houston PA, Wallis DJ, Guiney I and Humphreys CJ (2016). Impact of Buffer Charge on the Reliability of Carbon Doped AIGaN/GaN-on-Si HEMTs. 2016 IEEE International Reliability Physics Symposium (IRPS). 
01-04-2016

Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K and Scholz F (2016). Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates. Journal of Crystal Growth, Elsevier vol. 440, 69-75.  
01-04-2016

Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S, Sonsky J and Kuball M (2016). Subthreshold Mobility in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 63 (5), 1861-1865.  
30-03-2016

Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon P-M, Cherns D, Martin RW, Humphreys CJ, Bowen CR, Allsopp DWE and Shields PA (2016). Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods. Crystal Growth & Design, American Chemical Society (ACS) vol. 16 (4), 1907-1916.  
23-03-2016

Rhode SL, Horton MK, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ, Dusane RO and Moram MA (2016). Dislocation core structures in (0001) InGaN. Journal of Applied Physics, AIP Publishing vol. 119 (10) 
09-03-2016

Corbett B, Quan Z, Dinh DV, Kozlowski G, O'Mahony D, Akhter M, Schulz S, Parbrook P, Maaskant P, Caliebe M, Hocker M, Thonke K, Scholz F, Pristovsek M, Han Y, Humphreys CJ, Brunner F, Weyers M, Meyer TM and Lymperakis L (2016). Development of semipolar (11-22) LEDs on GaN templates. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX. 
08-03-2016

Gîrgel I, Edwards PR, Le Boulbar E, Coulon P-M, Sahonta S-L, Allsopp DWE, Martin RW, Humphreys CJ and Shields PA (2016). Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes. 
07-03-2016

Novikov SV, Staddon CR, Sahonta S, Oliver RA, Humphreys CJ and Foxon CT (2016). Molecular beam epitaxy of free‐standing bulk wurtzite AlxGa1‐xN layers using a highly efficient RF plasma source. 
25-02-2016

Hammersley S, Dawson P, Kappers MJ, Massabuau FC, Frentrup M, Oliver RA and Humphreys CJ (2016). Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs. 
17-02-2016

Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D and Humphreys CJ (2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, AIP Publishing vol. 108 (7) 
15-02-2016

Davies MJ, Hammersley S, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2016). A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. Journal of Applied Physics, AIP Publishing vol. 119 (5) 
05-02-2016

Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA and Humphreys CJ (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. 
03-02-2016

Dunn A, Spencer BF, Hardman SJO, Graham DM, Hammersley S, Davies MJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2016). Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time‐resolved terahertz and photoluminescence spectroscopy. 
03-02-2016

Christian GM, Hammersley S, Davies MJ, Dawson P, Kappers MJ, Massabuau FC, Oliver RA and Humphreys CJ (2016). Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells. 
27-01-2016

Han Y, Zhu D, Zhu T, Humphreys CJ and Wallis DJ (2016). Origins of hillock defects on GaN templates grown on Si(111). Journal of Crystal Growth, Elsevier vol. 434, 123-127.  
01-01-2016

Kakanakova-Georgieva A, Sahonta S-L, Nilsson D, Trinh XT, Son NT, Janzén E and Humphreys CJ (2016). n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon. Journal of Materials Chemistry C, Royal Society of Chemistry (RSC) vol. 4 (35), 8291-8296.  
01-01-2016

Zhu D and Humphreys CJ (2016). Solid-State Lighting Based on Light Emitting Diode Technology. Optics in Our Time  87-118.  
01-01-2016

Miaja PF, Jiang S, Lee KB, Guiney I, Wallis DJ, Humphreys CJ, Houston PA and Forsyth AJ (2016). Modelling the Closely-Coupled Cascode Switching Process. 2016 IEEE Energy Conversion Congress and Exposition (ECCE). 
01-01-2016

Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz Magnetospectroscopy Studies of an AlGaN/GaN Heterostructure. 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). 
01-01-2016

Rae K, Xie E, Foucher C, Guilhabert B, Ferriera R, Zhu D, Wallis DJ, Humphreys CJ, Oliver RA, Gu E, Laurand N and Dawson MD (2016). Transfer printed multi-color integrated devices for visible light communication applications. Light, Energy and the Environment. 
01-01-2016

Benakaprasad B, Eblabla A, Li X, Thayne I, Wallis DJ, Guiney I, Humphreys C and Elgaid K (2016). Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology on GaN-on-Low Resistivity Silicon Substrates. 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). 
01-01-2016

Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure. Conference on Lasers and Electro-Optics. 
01-01-2016

Rhode SL, Horton MK, Fu WY, Sahonta S-L, Kappers MJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Dislocation core structures in Si-doped GaN. Applied Physics Letters, AIP Publishing vol. 107 (24) 
14-12-2015

Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2015). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire. physica status solidi (b), Wiley vol. 253 (5), 834-839.  
12-12-2015

Schulz S, Tanner DP, O'Reilly EP, Caro MA, Martin TL, Bagot PAJ, Moody MP, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2015). Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory. Physical Review B, American Physical Society (APS) vol. 92 (23) 
01-12-2015

Zhang S, Cui Y, Griffiths JT, Fu WY, Freysoldt C, Neugebauer J, Humphreys CJ and Oliver RA (2015). Difference in linear polarization of biaxially strained InxGa1−xN alloys on nonpolar a-plane and m-plane GaN. Physical Review B, American Physical Society (APS) vol. 92 (24) 
01-12-2015

Cho SJ, Roberts JW, Guiney I, Li X, Ternent G, Floros K, Humphreys CJ, Chalker PR and Thayne IG (2015). A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. 
01-11-2015

Griffiths JT, Zhang S, Rouet-Leduc B, Fu WY, Bao A, Zhu D, Wallis DJ, Howkins A, Boyd I, Stowe D, Kappers MJ, Humphreys CJ and Oliver RA (2015). Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping. Nano Letters, American Chemical Society (ACS) vol. 15 (11), 7639-7643.  
22-10-2015

Rae K, Xie EY, Trindade AJ, Guilhabert B, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ, Wallis DJ and Dawson MD (2015). Integrated Dual-Color Ingan Light-Emitting Diode Array Through Transfer Printing. 2015 IEEE Photonics Conference (IPC). 
01-10-2015

Meneghini M, Zhu D, Humphreys CJ, Berti M, Gasparotto A, Cesca T, Vinattieri A, Bogani F, Meneghesso G and Zanoni E (2015). Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes. AIP Advances, AIP Publishing vol. 5 (10) 
01-10-2015

Hammersley S, Kappers MJ, Massabuau FC-P, Sahonta S-L, Dawson P, Oliver RA and Humphreys CJ (2015). Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions. Applied Physics Letters, AIP Publishing vol. 107 (13) 
28-09-2015

Pristovsek M, Frentrup M, Han Y and Humphreys CJ (2015). Optimizing GaN () hetero‐epitaxial templates grown on () sapphire. physica status solidi (b), Wiley vol. 253 (1), 61-66.  
31-08-2015

Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2015). Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant. Semiconductor Science and Technology, IOP Publishing vol. 30 (10) 
18-08-2015

Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K and Scholz F (2015). Growth and coalescence studies of oriented GaN on pre‐structured sapphire substrates using marker layers. physica status solidi (b), Wiley vol. 253 (1), 46-53.  
14-08-2015

Waller WM, Karboyan S, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ and Kuball M (2015). Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 62 (8), 2464-2469.  
07-07-2015

Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E, Wallis DJ, Watson IM, Humphreys CJ and Dawson MD (2015). Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing. Optics Express, Optica Publishing Group vol. 23 (7), 9329-9338.  
02-04-2015

Han Y, Caliebe M, Kappers M, Scholz F, Pristovsek M and Humphreys C (2015). Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire. Journal of Crystal Growth, Elsevier vol. 415, 170-175.  
01-04-2015

Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Oliver RA, Humphreys CJ, Allsopp DWE and Martin RW (2015). Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, AIP Publishing vol. 117 (11) 
21-03-2015

Kappers MJ, Zhu T, Sahonta S, Humphreys CJ and Oliver RA (2015). SCM and SIMS investigations of unintentional doping in III‐nitrides. 
18-03-2015

Lee KB, Guiney I, Jiang S, Zaidi ZH, Qian H, Wallis DJ, Uren MJ, Kuball M, Humphreys CJ and Houston PA (2015). Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V. Applied Physics Express, IOP Publishing vol. 8 (3) 
19-02-2015

Horton MK, Rhode S, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Segregation of In to Dislocations in InGaN. Nano Letters, American Chemical Society (ACS) vol. 15 (2), 923-930.  
21-01-2015

Sutherland D, Zhu T, Griffiths JT, Tang F, Dawson P, Kundys D, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA (2015). Optical studies of non‐polar m‐plane () InGaN/GaN multi‐quantum wells grown on freestanding bulk GaN. 
20-01-2015

Hammersley S, Davies MJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2014). Carrier distributions in InGaN/GaN light‐emitting diodes. physica status solidi (b), Wiley vol. 252 (5), 890-894.  
29-12-2014

Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2014). Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, AIP Publishing vol. 116 (24) 
22-12-2014

Massabuau FC, Davies MJ, Blenkhorn WE, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures. physica status solidi (b), Wiley vol. 252 (5), 928-935.  
19-12-2014

Pristovsek M, Han Y, Zhu T, Frentrup M, Kappers MJ, Humphreys CJ, Kozlowski G, Maaskant P and Corbett B (2014). Low defect large area semi‐polar (112) GaN grown on patterned (113) silicon. 
05-12-2014

Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ, Humphreys CJ and Oliver RA (2014). Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method. APL Materials, AIP Publishing vol. 2 (12) 
01-12-2014

Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE. Journal of Crystal Growth, Elsevier vol. 408, 32-41.  
01-12-2014

Davies MJ, Dawson P, Massabuau FC, Le Fol A, Oliver RA, Kappers MJ and Humphreys CJ (2014). A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures. physica status solidi (b), Wiley vol. 252 (5), 866-872.  
14-11-2014

Dinh DV, Oehler F, Zubialevich VZ, Kappers MJ, Alam SN, Caliebe M, Scholtz F, Humphreys CJ and Parbrook PJ (2014). Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy. Journal of Applied Physics, AIP Publishing vol. 116 (15) 
16-10-2014

Trindade AJ, Guilhabert B, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ, Wallis DJ and Dawson MD (2014). Capillary-Bonding of Thin LEDs onto Non-Native Substrates by Transfer-Printing. 2014 IEEE Photonics Conference. 
01-10-2014

Lozano JG, Yang H, Guerrero-Lebrero MP, D'Alfonso AJ, Yasuhara A, Okunishi E, Zhang S, Humphreys CJ, Allen LJ, Galindo PL, Hirsch PB and Nellist PD (2014). Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride. Physical Review Letters, American Physical Society (APS) vol. 113 (13) 
24-09-2014

Massabuau FC-P, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T, Hopkins MA, Humphreys CJ, Dawson P, Dunin-Borkowski RE, Etheridge J, Allsopp DWE and Oliver RA (2014). The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem. Applied Physics Letters, AIP Publishing vol. 105 (11) 
15-09-2014

Rhode SL, Fu WY, Moram MA, Massabuau FC-P, Kappers MJ, McAleese C, Oehler F, Humphreys CJ, Dusane RO and Sahonta S (2014). Structure and strain relaxation effects of defects in InxGa1−xN epilayers. Journal of Applied Physics, AIP Publishing vol. 116 (10) 
10-09-2014

Davies MJ, Dawson P, Massabuau FC-P, Oliver RA, Kappers MJ and Humphreys CJ (2014). The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures. Applied Physics Letters, AIP Publishing vol. 105 (9) 
01-09-2014

Trager-Cowan C, Naresh-Kumar G, Allehiani N, Kraeusel S, Hourahine B, Vespucci S, Thomson D, Bruckbauer J, Kusch G, Edwards PR, Martin RW, Mauder C, Day AP, Winkelmann A, Vilalta-Clemente A, Wilkinson AJ, Parbrook PJ, Kappers MJ, Moram MA, Oliver RA, et al. (2014). Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors. 
01-08-2014

Humphreys C (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World's Energy Problems. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 20 (S3), xcvii-c.  
01-08-2014

Humphreys C (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy Problems. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 20 (S2), 11-14.  
29-07-2014

Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Allsopp DWE, Oliver RA, Humphreys CJ and Martin RW (2014). Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Journal of Applied Physics, AIP Publishing vol. 116 (3) 
18-07-2014

Möreke J, Uren MJ, Novikov SV, Foxon CT, Vajargah SH, Wallis DJ, Humphreys CJ, Haigh SJ, Al-Khalidi A, Wasige E, Thayne I and Kuball M (2014). Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, AIP Publishing vol. 116 (1) 
03-07-2014

Nellist PD, Hirsch PB, Rhode S, Horton MK, Lozano JG, Yasuhara A, Okunishi E, Zhang S, Sahonta S-L, Kappers MJ, Humphreys CJ and Moram MA (2014). A dissociation mechanism for the [a+c] dislocation in GaN. 
11-06-2014

Lozano JG, Guerrero-Lebrero MP, Yasuhara A, Okinishi E, Zhang S, Humphreys CJ, Galindo PL, Hirsch PB and Nellist PD (2014). Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM. 
11-06-2014

Calciati M, Goano M, Bertazzi F, Vallone M, Zhou X, Ghione G, Meneghini M, Meneghesso G, Zanoni E, Bellotti E, Verzellesi G, Zhu D and Humphreys C (2014). Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues. AIP Advances, AIP Publishing vol. 4 (6) 
01-06-2014

Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Zhu D and Humphreys C (2014). Dislocation-related trap levels in nitride-based light emitting diodes. Applied Physics Letters, AIP Publishing vol. 104 (21) 
26-05-2014

Kundys D, Schulz S, Oehler F, Sutherland D, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2014). Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. Journal of Applied Physics, AIP Publishing vol. 115 (11) 
21-03-2014

Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FC-P, Oehler F, Oliver RA and Humphreys CJ (2014). Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells. Journal of Applied Physics, AIP Publishing vol. 115 (11) 
18-03-2014

Bruckbauer J, Edwards PR, Sahonta S-L, Massabuau FC-P, Kappers MJ, Humphreys CJ, Oliver RA and Martin RW (2014). Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures. Journal of Physics D, IOP Publishing vol. 47 (13) 
11-03-2014

Vinattieri A, Batignani F, Bogani F, Meneghini M, Meneghesso G, Zanoni E, Zhu D and Humphreys CJ (2014). Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing. 
21-02-2014

Mutta GR, Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Meneghesso G, Zhu D and Humphreys C (2014). Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices. 
21-02-2014

Massabuau FC, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA (2014). The impact of growth parameters on trench defects in InGaN/GaN quantum wells. physica status solidi (a) – applications and materials science, Wiley vol. 211 (4), 740-743.  
14-02-2014

Davies MJ, Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2014). High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime. 
01-02-2014

Sutherland D, Oehler F, Zhu T, Griffiths JT, Badcock TJ, Dawson P, Emery RM, Kappers MJ, Humphreys CJ and Oliver RA (2014). An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire. 
01-02-2014

Badcock TJ, Dawson P, Davies MJ, Oliver RA, Kappers MJ and Humphreys CJ (2014). Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures. 
28-01-2014

Davies MJ, Massabuau FC, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2014). Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures. 
28-01-2014

Davies MJ, Dawson P, Massabuau FC, Oehler F, Oliver RA, Kappers MJ, Badcock TJ and Humphreys CJ (2014). The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells. physica status solidi (c), Wiley vol. 11 (3‐4), 750-753.  
28-01-2014

Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD (2014). Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. Journal of Applied Physics, AIP Publishing vol. 115 (3) 
21-01-2014

Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2014). The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method. Journal of Crystal Growth, Elsevier vol. 386, 88-93.  
01-01-2014

Zhang S, Fu WY, Holec D, Humphreys CJ and Moram MA (2013). Elastic constants and critical thicknesses of ScGaN and ScAlN. Journal of Applied Physics, AIP Publishing vol. 114 (24) 
28-12-2013

Zhang S, Zhang Y, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS and Humphreys CJ (2013). Interfacial Structure and Chemistry of GaN on Ge(111). Physical Review Letters, American Physical Society (APS) vol. 111 (25) 
16-12-2013

Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson MD (2013). Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates. Applied Physics Letters, AIP Publishing vol. 103 (25) 
16-12-2013

Massabuau FC-P, Trinh-Xuan L, Lodié D, Sahonta S-L, Rhode S, Thrush EJ, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA (2013). Towards a better understanding of trench defects in InGaN/GaN quantum wells. 
29-11-2013

Zhu D and Humphreys CJ (2013). Low-cost high-efficiency GaN LED on large-area si substrate. 
15-11-2013

Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ and Trager-Cowan C (2013). Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 20 (1), 55-60.  
12-11-2013

Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ and Oliver RA (2013). Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges. Journal of Crystal Growth, Elsevier vol. 383, 12-18.  
01-11-2013

Zhang S, Holec D, Fu WY, Humphreys CJ and Moram MA (2013). Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides. Journal of Applied Physics, AIP Publishing vol. 114 (13) 
04-10-2013

Zhu D, Wallis DJ and Humphreys CJ (2013). Prospects of III-nitride optoelectronics grown on Si. Reports on Progress in Physics, IOP Publishing vol. 76 (10) 
01-10-2013

Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F and Humphreys CJ (2013). The effect of dislocations on the efficiency of InGaN/GaN solar cells. Solar Energy Materials and Solar Cells, Elsevier vol. 117, 279-284.  
01-10-2013

Oliver RA, Massabuau FC-P, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ, Dawson P, Hopkins MA, Allsopp DWE and Humphreys CJ (2013). The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes. Applied Physics Letters, AIP Publishing vol. 103 (14) 
30-09-2013

Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ, Yasuhara A, Okunishi E and Nellist PD (2013). The dissociation of the [a + c] dislocation in GaN. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 93 (28-30), 3925-3938.  
30-09-2013

Trindade AJ, Massoubre D, Guilhabert B, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson’ MD (2013). Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes. 2013 IEEE Photonics Conference. 
01-09-2013

Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A and Humphreys CJ (2013). Measuring the composition of AlGaN layers in GaN based structures grown on 150?mm Si substrates using (2?0?5) reciprocal space maps. Semiconductor Science and Technology, IOP Publishing vol. 28 (9) 
21-08-2013

Oehler F, Vickers ME, Kappers MJ, Humphreys CJ and Oliver RA (2013). Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds. Japanese Journal of Applied Physics, IOP Publishing vol. 52 (8S) 
22-07-2013

Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-L and Moram MA (2013). Mg Doping Affects Dislocation Core Structures in GaN. Physical Review Letters, American Physical Society (APS) vol. 111 (2) 
09-07-2013

Meneghini M, Vaccari S, Garbujo A, Trivellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G and Zanoni E (2013). Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells. Japanese Journal of Applied Physics, IOP Publishing vol. 52 (8S) 
31-05-2013

Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2013). Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures. Japanese Journal of Applied Physics, IOP Publishing vol. 52 (8S) 
31-05-2013

Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2013). Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells. Japanese Journal of Applied Physics, IOP Publishing vol. 52 (8S) 
31-05-2013

Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, McAleese C, Humphreys CJ and Martin RW (2013). Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates. Semiconductor Science and Technology, IOP Publishing vol. 28 (6) 
16-05-2013

Meneghini M, Trivellin N, Berti M, Cesca T, Gasparotto A, Vinattieri A, Bogani F, Zhu D, Humphreys CJ, Meneghesso G and Zanoni E (2013). Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs. Gallium Nitride Materials and Devices VIII. 
22-02-2013

Massabuau FC-P, Trinh-Xuan L, Lodié D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2013). Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells. Journal of Applied Physics, AIP Publishing vol. 113 (7) 
15-02-2013

Jouvet N, Kappers MJ, Humphreys CJ and Oliver RA (2013). The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption. Journal of Applied Physics, AIP Publishing vol. 113 (6) 
11-02-2013

Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ and Corbett B (2013). High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance. Applied Physics Express, IOP Publishing vol. 6 (2) 
01-02-2013

Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2013). High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop. Applied Physics Letters, AIP Publishing vol. 102 (2) 
14-01-2013

Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD (2013). Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. 2013 IEEE Photonics Conference. 
01-01-2013

Humphreys CJ (2012). The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law. Acta Crystallographica Section A: Foundations and advances, International Union of Crystallography (IUCr) vol. 69 (1), 45-50.  
05-12-2012

Sahonta S, Kappers MJ, Zhu D, Puchtler TJ, Zhu T, Bennett SE, Humphreys CJ and Oliver RA (2012). Properties of trench defects in InGaN/GaN quantum well structures. physica status solidi (a) – applications and materials science, Wiley vol. 210 (1), 195-198.  
21-11-2012

Massabuau FC-P, Sahonta S-L, Trinh-Xuan L, Rhode S, Puchtler TJ, Kappers MJ, Humphreys CJ and Oliver RA (2012). Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures. Applied Physics Letters, AIP Publishing vol. 101 (21) 
19-11-2012

Humphreys C (2012). Low-cost high-efficiency GaN LEDs on 6-inch Si. 
11-11-2012

Elsherif OS, Vernon-Parry KD, Evans-Freeman JH, Airey RJ, Kappers M and Humphreys CJ (2012). Characterisation of defects in p-GaN by admittance spectroscopy. 
01-08-2012

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Oliver RA and Humphreys CJ (2012). Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells. Journal of Applied Physics, AIP Publishing vol. 112 (1) 
01-07-2012

Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2012). The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures. Journal of Applied Physics, AIP Publishing vol. 111 (8) 
15-04-2012

Meneghini M, Vaccari S, Trivellin N, Zhu D, Humphreys C, Butendheich R, Leirer C, Hahn B, Meneghesso G and Zanoni E (2012). Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 59 (5), 1416-1422.  
08-03-2012

Bennett SE, Smeeton TM, Saxey DW, Smith GDW, Hooper SE, Heffernan J, Humphreys CJ and Oliver RA (2012). Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy. Journal of Applied Physics, AIP Publishing vol. 111 (5) 
01-03-2012

Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P and Humphreys CJ (2012). Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire. physica status solidi (b), Wiley vol. 249 (3), 494-497.  
16-02-2012

Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA and Humphreys CJ (2012). Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering. Journal of Applied Physics, AIP Publishing vol. 111 (4) 
15-02-2012

Amari H, Kappers MJ, Humphreys CJ, Chèze C and Walther T (2012). Measurement of the Al content in AlGaN epitaxial layers by combined energy‐dispersive X‐ray and electron energy‐loss spectroscopy in a transmission electron microscope. physica status solidi (c), Wiley vol. 9 (3‐4), 1079-1082.  
14-02-2012

Phillips WA, Thrush EJ, Zhang Y and Humphreys CJ (2012). Studies of efficiency droop in GaN based LEDs. 
26-01-2012

Liu LZ, McAleese C, Rao DVS, Kappers MJ and Humphreys CJ (2012). Electron holography of an in‐situ biased GaN‐based LED. 
26-01-2012

Kappers MJ, Badcock TJ, Hao R, Moram MA, Hammersley S, Dawson P and Humphreys CJ (2012). On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wells. 
26-01-2012

Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2012). Structure and chemistry of the Si(111)/AlN interface. Applied Physics Letters, AIP Publishing vol. 100 (1) 
02-01-2012

Humphreys C (2012). Low-cost high-efficiency GaN LEDs on 6-inch Si. Renewable Energy and the Environment Optics and Photonics Congress. 
01-01-2012

Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ (2012). Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films, Elsevier vol. 520 (7), 3064-3070.  
01-01-2012

Badcock TJ, Kappers MJ, Moram MA, Dawson P and Humphreys CJ (2011). Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN. physica status solidi (b), Wiley vol. 249 (3), 498-502.  
27-12-2011

Hao R, Kappers MJ, Moram MA and Humphreys CJ (2011). Defect reduction processes in heteroepitaxial non-polar a-plane GaN films. Journal of Crystal Growth, Elsevier vol. 337 (1), 81-86.  
01-12-2011

Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ and Moram MA (2011). Growth, microstructure and morphology of epitaxial ScGaN films. physica status solidi (a) – applications and materials science, Wiley vol. 209 (1), 33-40.  
24-11-2011

Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G, Couillard M, Botton GA, Sahonta S and Humphreys CJ (2011). High‐efficiency InGaN/GaN quantum well structures on large area silicon substrates. physica status solidi (a) – applications and materials science, Wiley vol. 209 (1), 13-16.  
21-11-2011

Amari H, Lari L, Zhang HY, Geelhaar L, Chèze C, Kappers MJ, McAleese C, Humphreys CJ and Walther T (2011). Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope. 
09-11-2011

Petrov M, Holec D, Lymperakis L, Neugebauer J and Humphreys CJ (2011). Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite AlN and AlxGa1−xN. 
09-11-2011

Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]. Journal of Applied Physics, AIP Publishing vol. 110 (9) 
01-11-2011

Zhang Y, Fu W-Y, Humphreys C and Lieten R (2011). Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate. Applied Physics Express, IOP Publishing vol. 4 (9) 
26-08-2011

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates. Japanese Journal of Applied Physics, IOP Publishing vol. 50 (8R) 
01-08-2011

Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r -Plane Sapphire Substrates. Japanese Journal of Applied Physics, IOP Publishing vol. 50 (8R) 
01-08-2011

Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GD and Oliver RA (2011). Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells. Applied Physics Letters, AIP Publishing vol. 99 (2) 
11-07-2011

Hammersley S, Badcock TJ, Watson‐Parris D, Godfrey MJ, Dawson P, Kappers MJ and Humphreys CJ (2011). Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure. 
20-06-2011

Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ (2011). Properties of surface‐pit related emission in a ‐plane InGaN/GaN quantum wells grown on r ‐plane sapphire. 
07-06-2011

Fu WY, Kappers MJ, Zhang Y, Humphreys CJ and Moram MA (2011). Dislocation Climb in c-Plane AlN Films. Applied Physics Express, IOP Publishing vol. 4 (6) 
01-06-2011

Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ (2011). The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates. physica status solidi (a) – applications and materials science, Wiley vol. 208 (7), 1529-1531.  
01-06-2011

Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH and Humphreys CJ (2011). Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys. Physical Review B, American Physical Society (APS) vol. 83 (16) 
15-04-2011

Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). The effects of Si doping on dislocation movement and tensile stress in GaN films. Journal of Applied Physics, AIP Publishing vol. 109 (7) 
01-04-2011

Humphreys CJ (2011). The Mystery of the Last Supper. 
28-03-2011

Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ and Humphreys CJ (2011). Carrier localization mechanisms in InxGa1-xN/GaN quantum wells. Physical Review B, American Physical Society (APS) vol. 83 (11) 
15-03-2011

Zhu D and Humphreys CJ (2011). Lighting. Fundamentals of Materials for Energy and Environmental Sustainability  474-490.  
01-01-2011

Chee AKW, Broom RF, Humphreys CJ and Bosch EGT (2011). A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations. Journal of Applied Physics, AIP Publishing vol. 109 (1) 
01-01-2011

Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M, Hylton N, Dawson P and Humphreys C (2011). Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates. Journal of Applied Physics, AIP Publishing vol. 109 (1) 
01-01-2011

Moram MA, Sadler TC, Häberlen M, Kappers MJ and Humphreys CJ (2010). Dislocation movement in GaN films. Applied Physics Letters, AIP Publishing vol. 97 (26) 
27-12-2010

Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2010). Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy. Applied Physics Letters, AIP Publishing vol. 97 (25) 
20-12-2010

Chang TY, Moram MA, McAleese C, Kappers MJ and Humphreys CJ (2010). Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm. Journal of Applied Physics, AIP Publishing vol. 108 (12) 
15-12-2010

Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA (2010). Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice. Ultramicroscopy, Elsevier vol. 111 (3), 207-211.  
01-12-2010

Hao R, Zhu T, Häberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ and Moram MA (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth, Elsevier vol. 312 (23), 3536-3543.  
01-11-2010

Schulz S, Badcock TJ, Moram MA, Dawson P, Kappers MJ, Humphreys CJ and O’Reilly EP (2010). Electronic and optical properties of nonpolar a-plane GaN quantum wells. Physical Review B, American Physical Society (APS) vol. 82 (12) 
15-09-2010

Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A and Humphreys CJ (2010). Microstructural origins of localization in InGaN quantum wells. Journal of Physics D, IOP Publishing vol. 43 (35) 
19-08-2010

Kurniawan O, Tan CC, Ong VKS, Li E and Humphreys CJ (2010). A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 57 (10), 2455-2461.  
09-08-2010

Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics, AIP Publishing vol. 108 (3) 
01-08-2010

Moram MA, Kappers MJ and Humphreys CJ (2010). Low dislocation density nonpolar (11‐20) GaN films achieved using scandium nitride interlayers. 
01-07-2010

Rodenburg C, Jepson MAE, Inkson BJ, Bosch EGT and Humphreys CJ (2010). Energy filtered scanning electron microscopy: applications to characterisation of semiconductors. 
01-07-2010

Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA (2010). Atom probe extended to AlGaN: three‐dimensional imaging of a Mg‐doped AlGaN/GaN superlattice. 
01-07-2010

Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M and Humphreys C (2010). InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength. 
01-07-2010

Watson‐Parris D, Godfrey MJ, Oliver RA, Dawson P, Galtrey MJ, Kappers MJ and Humphreys CJ (2010). Energy landscape and carrier wave‐functions in InGaN/GaN quantum wells. 
01-07-2010

Collins DP, Holmes MJ, Taylor RA, Oliver RA, Kappers MJ and Humphreys CJ (2010). Q‐factor measurements on planar nitride cavities. 
01-07-2010

Badcock TJ, Hammersley S, Kappers MJ, Humphreys CJ and Dawson P (2010). Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults. 
01-07-2010

Badcock TJ, Häberlen M, Kappers MJ, Moram MA, Dawson P, Humphreys CJ and Oliver RA (2010). Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a ‐plane GaN. 
01-07-2010

Badcock TJ, Schulz S, Moram MA, Kappers MJ, Dawson P, O'Reilly EP and Humphreys CJ (2010). Characterising the degree of polarisation anisotropy in an a ‐plane GaN film. 
01-07-2010

Humphreys C, Oliver R, Kappers M, Bennett , Parris D, Dawson P, Godfrey M, Clifton P, Larson D, Ulfig R, Saxey D and Cerezo A (2010). Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 16 (S2), 1890-1891.  
01-07-2010

Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ and Humphreys CJ (2010). Dislocation reduction in GaN grown on Si(111) using a strain‐driven 3D GaN interlayer. 
08-06-2010

Bennett SE, Holec D, Kappers MJ, Humphreys CJ and Oliver RA (2010). Imaging dislocations in gallium nitride across broad areas using atomic force microscopy. Review of Scientific Instruments, AIP Publishing vol. 81 (6) 
01-06-2010

Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M and Spence JCH (2010). Combined structure‐factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN. Acta Crystallographica Section A: Foundations and advances, International Union of Crystallography (IUCr) vol. 66 (4), 446-450.  
07-05-2010

Chee KWA, Bosch EGT and Humphreys CJ (2010). Progress towards quantitative dopant profiling in the SEM. 
01-02-2010

Rao DVS, Beanland R, Kappers MJ, Zhu D and Humphreys CJ (2010). Lattice distortions in GaN thin films on (0001) sapphire. 
01-02-2010

Haeberlen M, Zhu D, McAleese C, Kappers MJ and Humphreys CJ (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers. 
01-02-2010

Oliver RA, Bennett SE, Sumner J, Kappers MJ and Humphreys CJ (2010). Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth. 
01-02-2010

Chee KWA, Beanland R, Midgley PA and Humphreys CJ (2010). Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system. 
01-02-2010

Barnard JS, Bennett SE, Oliver RA, Kappers MJ and Humphreys CJ (2010). The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials. 
01-02-2010

Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA (2010). Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS. 
01-02-2010

Jepson MAE, Inkson BJ, Beanland R, Chee AKW, Humphreys CJ and Rodenburg C (2010). Progress towards site-specific dopant profiling in the scanning electron microscope. 
01-02-2010

Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ and Hageman PR (2010). Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment. Journal of Crystal Growth, Elsevier vol. 312 (4), 595-600.  
01-02-2010

Rodenburg C, Jepson MAE, Inkson BJ, Bosch E, Chee AKW and Humphreys CJ (2010). Energy filtered scanning electron microscopy: Applications to dopant contrast. 
01-02-2010

Liu LZ-Y, Rao DVS, Kappers MJ, Humphreys CJ and Geiger D (2010). Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography. 
01-02-2010

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2010). Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy. Journal of Physics D, IOP Publishing vol. 43 (5) 
21-01-2010

Kappers MJ, Moram MA, Rao DVS, McAleese C and Humphreys CJ (2010). Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire. Journal of Crystal Growth, Elsevier vol. 312 (3), 363-367.  
01-01-2010

Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ and Humphreys CJ (2009). Cavity Enhancement of Single Quantum Dot Emission in the Blue. Discover Nano, Springer Nature vol. 5 (3) 
27-12-2009

Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ and Humphreys CJ (2009). Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy. Journal of Applied Physics, AIP Publishing vol. 106 (11) 
01-12-2009

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2009). Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN. Journal of Applied Physics, AIP Publishing vol. 106 (10) 
15-11-2009

Moram MA, Oliver RA, Kappers MJ and Humphreys CJ (2009). The Spatial Distribution of Threading Dislocations in Gallium Nitride Films. Advanced Materials, Wiley vol. 21 (38‐39), 3941-3944.  
16-10-2009

Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ and Corbett B (2009). Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes. Applied Physics Letters, AIP Publishing vol. 95 (15) 
12-10-2009

Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ and Humphreys CJ (2009). On the origin of threading dislocations in GaN films. Journal of Applied Physics, AIP Publishing vol. 106 (7) 
01-10-2009

Oliver RA, Sumner J, Kappers MJ and Humphreys CJ (2009). Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images. Journal of Applied Physics, AIP Publishing vol. 106 (5) 
01-09-2009

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction. Physica B Condensed Matter, Elsevier vol. 404 (16), 2189-2191.  
01-08-2009

Bennett , Oliver R, Saxey D, Cerezo A, Clifton P, Ulfig R, Kappers M and Humphreys C (2009). Atom Probe Tomography Studies of GaN-Based Semiconductor Materials. 
01-07-2009

Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA, Humphreys CJ, Vierheilig C and Schwarz UT (2009). Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, AIP Publishing vol. 106 (1) 
01-07-2009

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films. Journal of Physics D, IOP Publishing vol. 42 (13) 
16-06-2009

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2009). Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates. Journal of Applied Physics, AIP Publishing vol. 105 (12) 
15-06-2009

Rao DVS, McLaughlin K, Kappers MJ and Humphreys CJ (2009). Lattice distortions in GaN on sapphire using the CBED–HOLZ technique. Ultramicroscopy, Elsevier vol. 109 (10), 1250-1255.  
12-06-2009

Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers. Journal of Crystal Growth, Elsevier vol. 311 (12), 3239-3242.  
01-06-2009

Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ (2009). Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire. Journal of Crystal Growth, Elsevier vol. 311 (12), 3295-3299.  
01-06-2009

Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ (2009). Defect reduction in non‐polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire. 
01-06-2009

Moram MA, Johnston CF, Hollander JL, Kappers MJ and Humphreys CJ (2009). Understanding x-ray diffraction of nonpolar gallium nitride films. Journal of Applied Physics, AIP Publishing vol. 105 (11) 
01-06-2009

Tan WS, Kauer M, Hooper SE, Smeeton TM, Bousquet V, Rossetti M, Heffernan J, Xiu H and Humphreys CJ (2009). Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy. 
01-06-2009

Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C and Tahraoui A (2009). Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. Nanotechnology, IOP Publishing vol. 20 (24) 
27-05-2009

Hylton NP, Dawson P, Johnston CF, Kappers MJ, Hollander JL, McAleese C and Humphreys CJ (2009). Optical and microstructural properties of semi‐polar (11‐22) InGaN/GaN quantum well structures. 
26-05-2009

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2009). Optical polarisation anisotropy in a ‐plane GaN/AlGaN multiple quantum well structures. 
26-05-2009

Johnston CF, Moram MA, Kappers MJ and Humphreys CJ (2009). Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers. Applied Physics Letters, AIP Publishing vol. 94 (16) 
20-04-2009

Johnston CF, Kappers MJ and Humphreys CJ (2009). Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method. Journal of Applied Physics, AIP Publishing vol. 105 (7) 
01-04-2009

Collins DP, Jarjour AF, Taylor RA, Hadjipanayi M, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2009). Non‐linear excitation and correlation studies of single InGaN quantum dots. 
01-04-2009

Holec D, Rao DVS and Humphreys CJ (2009). HANSIS software tool for the automated analysis of HOLZ lines. Ultramicroscopy, Elsevier vol. 109 (7), 837-844.  
24-03-2009

Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ and Campion RP (2009). Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, Elsevier vol. 311 (7), 2054-2057.  
01-03-2009

Zhu D, McAleese C, McLaughlin KK, Häberlen M, Salcianu CO, Thrush EJ, Kappers MJ, Phillips WA, Lane P, Wallis DJ, Martin T, Astles M, Thomas S, Pakes A, Heuken M and Humphreys CJ (2009). GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII. 
03-02-2009

Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA and Humphreys CJ (2009). Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices. Applied Physics Letters, AIP Publishing vol. 94 (1) 
05-01-2009

Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C and Humphreys CJ (2008). Equilibrium critical thickness for misfit dislocations in III-nitrides. Journal of Applied Physics, AIP Publishing vol. 104 (12) 
15-12-2008

Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2008). Electrically driven single InGaN/GaN quantum dot emission. Applied Physics Letters, AIP Publishing vol. 93 (23) 
08-12-2008

Holec D, Costa PMFJ, Cherns PD and Humphreys CJ (2008). A theoretical study of ELNES spectra of AlxGa1-xN using Wien2k and Telnes programs. 
01-11-2008

Kappers MJ, Hollander JL, Johnston CF, McAleese C, Rao DVS, Sanchez AM, Humphreys CJ, Badcock TJ and Dawson P (2008). Properties of non-polar a-plane GaN/AlGaN quantum wells. 
01-11-2008

Moram MA, Barber ZH and Humphreys CJ (2008). The effect of oxygen incorporation in sputtered scandium nitride films. Thin Solid Films, Elsevier vol. 516 (23), 8569-8572.  
01-10-2008

Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2008). Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates. Applied Physics Letters, AIP Publishing vol. 93 (10) 
08-09-2008

Johnston CF, Kappers MJ, Barnard JS and Humphreys CJ (2008). Characterisation of non-polar (11-20) gallium nitride using TEM techniques. 
01-08-2008

Chee KWA, Rodenburg C and Humphreys CJ (2008). High resolution dopant profiling in the SEM, image widths and surface band-bending. 
01-08-2008

Oliver RA, Van der Laak NK, Kappers MJ and Humphreys CJ (2008). Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose. Journal of Crystal Growth, Elsevier vol. 310 (15), 3459-3465.  
01-07-2008

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW and Cerezo A (2008). Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures. Journal of Applied Physics, AIP Publishing vol. 104 (1) 
01-07-2008

Emiroglu D, Evans-Freeman J, Kappers MJ, McAleese C and Humphreys CJ (2008). High Resolution Laplace Deep Level Transient Spectroscopy Studies of Shallow and Deep Levels in n-GaN. 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. 
01-07-2008

Oliver RA, Galtrey MJ and Humphreys CJ (2008). High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems. Materials Science and Technology, SAGE Publications vol. 24 (6), 675-681.  
01-06-2008

Moram MA, Vickers ME, Kappers MJ and Humphreys CJ (2008). The effect of wafer curvature on x-ray rocking curves from gallium nitride films. Journal of Applied Physics, AIP Publishing vol. 103 (9) 
01-05-2008

Johnston CF, Kappers MJ, Barnard JS and Humphreys CJ (2008). Morphological study of non‐polar (11‐20) GaN grown on r‐plane (1‐102) sapphire. 
01-05-2008

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2008). Assessment of scanning spreading resistance microscopy for application to n‐type GaN. 
01-05-2008

Oliver RA, Kappers MJ and Humphreys CJ (2008). Gross well‐width fluctuations in InGaN quantum wells. 
01-05-2008

Moram MA, Kappers MJ, Zhang Y, Barber ZH and Humphreys CJ (2008). Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers. 
01-05-2008

Salcianu CO, Thrush EJ, Plumb RG, Boyd AR, Rockenfeller O, Schmitz D, Heuken M and Humphreys CJ (2008). Palladium‐based on‐wafer electroluminescence studies of GaN‐based LED structures. 
01-05-2008

Xiu H, Thrush EJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ (2008). Degradation of III‐nitride laser diodes grown by molecular beam epitaxy. 
01-05-2008

Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote S and Borghs G (2008). Structural features in GaN grown on a Ge(111) substrate. 
01-05-2008

Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT and Humphreys CJ (2008). Growth of epitaxial thin films of scandium nitride on 100-oriented silicon. Journal of Crystal Growth, Elsevier vol. 310 (11), 2746-2750.  
01-05-2008

Corbett B, Zhu D, Roycroft B, Maaskant P, Akhter M, McAleese C, Kappers MJ and Humphreys CJ (2008). High brightness near‐ultraviolet resonant LEDs. 
01-05-2008

Datta R, McAleese C, Cherns P, Rayment FDG and Humphreys CJ (2008). Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer. 
01-05-2008

Emiroglu D, Evans‐Freeman J, Kappers MJ, McAleese C and Humphreys CJ (2008). High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n‐type GaN. 
01-05-2008

Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Taylor RA and Humphreys CJ (2008). Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field. 
01-05-2008

Dawson P, Hylton NP, Kappers MJ, McAleese C and Humphreys CJ (2008). Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells. 
01-05-2008

Sumner J, Bakshi SD, Oliver RA, Kappers MJ and Humphreys CJ (2008). Unintentional doping in GaN assessed by scanning capacitance microscopy. 
28-04-2008

Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larsen D and Cerezo A (2008). Atom probe reveals the structure of Inx Ga1–x N based quantum wells in three dimensions. 
28-04-2008

Rossetti M, Smeeton TM, Tan W-S, Kauer M, Hooper SE, Heffernan J, Xiu H and Humphreys CJ (2008). Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings. Applied Physics Letters, AIP Publishing vol. 92 (15) 
14-04-2008

Humphreys CJ (2008). Solid-State Lighting. MRS Bulletin, Springer Nature vol. 33 (4), 459-470.  
01-04-2008

Hollander JL, Kappers MJ, McAleese C and Humphreys CJ (2008). Improvements in a-plane GaN crystal quality by a two-step growth process. Applied Physics Letters, AIP Publishing vol. 92 (10) 
10-03-2008

Oliver RA, Kappers MJ, McAleese C, Datta R, Sumner J and Humphreys CJ (2008). The origin and reduction of dislocations in Gallium Nitride. 
05-03-2008

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2008). Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 26 (2), 611-617.  
01-03-2008

de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008). Advanced Materials, Wiley vol. 20 (5) 
29-02-2008

de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures. Advanced Materials, Wiley vol. 20 (5), 1038-1043.  
08-02-2008

Oliver RA, Jarjour AF, Taylor RA, Tahraoui A, Zhang Y, Kappers MJ and Humphreys CJ (2008). Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source. 
01-02-2008

Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D and Cerezo A (2008). Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe. Applied Physics Letters, AIP Publishing vol. 92 (4) 
28-01-2008

Zhao LX, Thrush EJ, Humphreys CJ and Phillips WA (2008). Degradation of GaN-based quantum well light-emitting diodes. Journal of Applied Physics, AIP Publishing vol. 103 (2) 
15-01-2008

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2008). Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN. 
01-01-2008

Cherns PD, McAleese C, Kappers MJ and Humphreys CJ (2008). Strain Relaxation in an AlGaN/GaN Quantum Well System. 
01-01-2008

Chee KWA, Rodenburg C and Humphreys CJ (2008). Quantitative Dopant Profiling in the SEM Including Surface States. 
01-01-2008

Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote S and Borghs G (2008). An Initial Exploration of GaN Grown on a Ge-(111) Substrate. 
01-01-2008

Humphreys CJ, Galtrey MJ, Laak NVD, Oliver RA, Kappers MJ, Barnard JS, Graham DM and Dawson P (2008). The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key. 
01-01-2008

Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y and Humphreys CJ (2008). The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3. Applied Surface Science, Elsevier vol. 254 (7), 2124-2130.  
01-01-2008

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A (2008). Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well Structures. 
01-01-2008

Moldovan* G, Ong VKS, Kurniawan O, Kazemian P, Edwards PR and Humphreys C (2008). EBIC Characterisation of Diffusion and Recombination of Minority Carriers in GaN-Based LEDs. 
01-01-2008

Humphreys CJ, Galtrey MJ, Oliver RA, Kappers MJ, Zhu D, McAleese C, van der Laak NK, Graham DM, Dawson P, Cerezo A and Clifton PH (2008). The atomic structure of GaN-based quantum wells and interfaces. EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany  41-42.  
01-01-2008

Holec D and Humphreys CJ (2007). Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems. 
06-12-2007

Hollander JL, Kappers MJ and Humphreys CJ (2007). Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientations. 
01-12-2007

Kappers MJ, Moram MA, Zhang Y, Vickers ME, Barber ZH and Humphreys CJ (2007). Interlayer methods for reducing the dislocation density in gallium nitride. 
01-12-2007

Cerezo A, Clifton PH, Galtrey MJ, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA, Oliver RA, Sha G, Thompson K, Zandbergen M and Alvis RL (2007). Atom probe tomography today. Materials Today, Elsevier vol. 10 (12), 36-42.  
01-12-2007

Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C and Humphreys CJ (2007). Deep electronic states associated with a metastable hole trap in n-type GaN. Physica B Condensed Matter, Elsevier vol. 401, 311-314.  
01-12-2007

Withnall R, Silver J, Ireland TG, Lipman AL, Fern GR, McAleese C, Humphreys C and Phillips WA (2007). Advantages and disadvantages of using YAG: Ce nanophosphors encapsulated on blue-emitting LED chips as backlights for displays. 
01-12-2007

Humphreys CJ (2007). Chapter 42. Turning Points in Solid-State, Materials and Surface Science  698-710.  
30-11-2007

Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Humphreys CJ and Taylor RA (2007). Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot. Physical Review Letters, American Physical Society (APS) vol. 99 (19) 
09-11-2007

Hylton NP, Dawson P, Kappers MJ, McAleese C and Humphreys CJ (2007). Excitation energy dependence of the photoluminescence spectrum of an InxGa1−xN∕GaN single quantum well structure. Physical Review B, American Physical Society (APS) vol. 76 (20) 
05-11-2007

Jiang N, Qiu J, Humphreys CJ and Spence JCH (2007). Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure. Micron, Elsevier vol. 39 (6), 698-702.  
22-10-2007

Holec D, Costa PMFJ, Cherns PD and Humphreys CJ (2007). Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs. Micron, Elsevier vol. 39 (6), 690-697.  
22-10-2007

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A and Smith GDW (2007). Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]. Applied Physics Letters, AIP Publishing vol. 91 (17) 
22-10-2007

Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer. Journal of Crystal Growth vol. 308 (2), 302-308.  
15-10-2007

Moram MA, Zhang Y, Kappers MJ, Barber ZH and Humphreys CJ (2007). Dislocation reduction in gallium nitride films using scandium nitride interlayers. Applied Physics Letters, AIP Publishing vol. 91 (15) 
08-10-2007

Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. Journal of Crystal Growth, Elsevier vol. 308 (2), 302-308.  
01-10-2007

Zhu D, Corbett B, Roycroft B, Maaskant P, McAleese C, Akhter M, Kappers MJ and Humphreys CJ (2007). Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications. Manufacturing LEDs for Lighting and Displays. 
25-09-2007

Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote B and Borghs G (2007). Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy. Applied Physics Letters, AIP Publishing vol. 91 (9) 
27-08-2007

Cerezo A, Chang L, Clifton P, Galtrey M, Gerstl S, Humphreys C, Mueller M, Oliver R, Smith G and Wu Y (2007). 3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 13 (S02), 1608-1609.  
01-08-2007

Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2007). Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot. Applied Physics Letters, AIP Publishing vol. 91 (5) 
30-07-2007

Moram MA, Barber ZH and Humphreys CJ (2007). Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction. Journal of Applied Physics, AIP Publishing vol. 102 (2) 
15-07-2007

van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Characterization of InGaN quantum wells with gross fluctuations in width. Journal of Applied Physics, AIP Publishing vol. 102 (1) 
01-07-2007

Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2007). Practical issues in carrier‐contrast imaging of GaN structures. 
01-06-2007

Holec D, Costa PMFJ, Kappers MJ and Humphreys CJ (2007). Critical thickness calculations for InGaN/GaN. 
01-05-2007

Humphreys CJ (2007). Does In form In-rich clusters in InGaN quantum wells? The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 87 (13), 1971-1982.  
01-05-2007

Galtrey M, Oliver R and Humphreys C (2007). Atom probe provides evidence to question InGaN cluster theory. Compound Semiconductor vol. 13 (4), 27-30.  
01-05-2007

Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ (2007). Resonant Photoluminescence Spectroscopy of InGaN/GaN Single Quantum Well Structures. 
10-04-2007

Rigopoulos N, Hamilton B, Davies GJ, Towlson BM, Poolton NRJ, Dawson P, Graham DM, Kappers MJ, Humphreys CJ and Carlson S (2007). Optically Detected Extended X‐Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum Wells. 
10-04-2007

Jarjour AF, Taylor RA, Martin RW, Watson IM, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ (2007). Optical Studies of Non‐linear Absorption in Single InGaN/GaN Quantum Dots. 
10-04-2007

Graham DM, Dawson P, Zhu D, Kappers MJ, McAleese C, Hylton NP, Chabrol GR and Humphreys CJ (2007). High Photoluminescence Efficiency III‐Nitride Based Quantum Well Structures Emitting at 380 nm. 
10-04-2007

Oliver RA, Jarjour AF, Tahraoui A, Kappers MJ, Taylor RA and Humphreys CJ (2007). Materials challenges for devices based on single, self-assembled InGaN quantum dots. 
01-04-2007

van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures. Applied Physics Letters, AIP Publishing vol. 90 (12) 
19-03-2007

Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B, Oliver RA, Humphreys CJ, Noakes TCQ and Bailey P (2007). Anisotropic strain relaxation in a-plane GaN quantum dots. Journal of Applied Physics, AIP Publishing vol. 101 (6) 
15-03-2007

Kappers MJ, Hollander JL, McAleese C, Johnston CF, Broom RF, Barnard JS, Vickers ME and Humphreys CJ (2007). Growth and characterisation of semi-polar (1l2¯2) InGaN/GaN MQW structures. 
01-03-2007

Kappers MJ, Datta R, Oliver RA, Rayment FDG, Vickers ME and Humphreys CJ (2007). Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers. 
01-03-2007

Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A (2007). Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering. Applied Physics Letters, AIP Publishing vol. 90 (6) 
05-02-2007

Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ and Humphreys CJ (2007). Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy. Applied Surface Science, Elsevier vol. 253 (8), 3937-3944.  
01-02-2007

Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C and Humphreys CJ (2007). High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm. Journal of Applied Physics, AIP Publishing vol. 101 (3) 
01-02-2007

Moram MA, Kappers MJ, Barber ZH and Humphreys CJ (2007). Growth of low dislocation density GaN using transition metal nitride masking layers. 
01-01-2007

Zhu D, Kappers MJ, McAleese C, Graham DM, Chabrol GR, Hylton NP, Dawson P, Thrush EJ and Humphreys CJ (2007). Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures. 
01-01-2007

Graham DM, Dawson P, Zhu D, Kappers MJ, McAleese C, Hylton NP, Chabro GR and Humphreys CJ (2007). High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm. 
01-01-2007

Chee AKW, Rodenburg C and Humphreys CJ (2007). The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions. MRS Advances, Springer Nature vol. 1026 
01-01-2007

Huixin X, Costa PMFJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ (2006). Study of defects in p-type layers in III-nitride laser diode structures grown by molecular beam epitaxy. 
01-12-2006

Ong VKS, Kurniawan O, Moldovan G and Humphreys CJ (2006). A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions. Journal of Applied Physics, AIP Publishing vol. 100 (11) 
01-12-2006

Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ (2006). Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures. Applied Physics Letters, AIP Publishing vol. 89 (21) 
20-11-2006

Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O and Humphreys CJ (2006). Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices. Ultramicroscopy, Elsevier vol. 107 (4-5), 382-389.  
07-11-2006

Spence⊥ JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM and Justo JF (2006). Imaging dislocation cores – the way forward. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (29-31), 4781-4796.  
11-10-2006

Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2006). Microstructure of epitaxial scandium nitride films grown on silicon. Applied Surface Science, Elsevier vol. 252 (24), 8385-8387.  
01-10-2006

Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging. Journal of Applied Physics, AIP Publishing vol. 100 (5) 
01-09-2006

Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). Quantitative secondary electron energy filtering in a scanning electron microscope and its applications. Ultramicroscopy, Elsevier vol. 107 (2-3), 140-150.  
26-07-2006

Moram MA, Barber ZH, Humphreys CJ, Joyce TB and Chalker PR (2006). Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. Journal of Applied Physics, AIP Publishing vol. 100 (2) 
15-07-2006

Oliver RA, Kappers MJ and Humphreys CJ (2006). Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy. Applied Physics Letters, AIP Publishing vol. 89 (1) 
03-07-2006

Datta R and Humphreys CJ (2006). Mechanisms of bending of threading dislocations in MOVPE‐grown GaN on (0001) sapphire. 
01-06-2006

Oliver RA, Kappers MJ, van der Laak NK and Humphreys CJ (2006). Three methods for the growth of InGaN nanostructures by MOVPE. 
01-06-2006

van der Laak NK, Oliver RA, Barnard JS, Cherns PD, Kappers MJ and Humphreys CJ (2006). Towards a better understanding of nano‐islands formed during atmospheric pressure MOVPE. 
01-06-2006

Moldovan G, Phillips A, Thrush EJ and Humphreys CJ (2006). Temperature current‐voltage characterisation of MOCVD grown InGaN/GaN MQW LEDs. 
01-06-2006

von Pezold J, Oliver RA, Kappers MJ, Bristowe PD and Humphreys CJ (2006). The effect of Si on the growth mode of GaN. 
01-06-2006

Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Barnard JS, Humphreys CJ and Thrush EJ (2006). Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells. 
01-06-2006

Graham DM, Dawson P, Zhang Y, Costa PMFJ, Kappers MJ, Humphreys CJ and Thrush EJ (2006). The effect of a Mg‐doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures. 
01-06-2006

Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Costa PMFJ, Vickers ME, Datta R, Humphreys CJ and Thrush EJ (2006). High quantum efficiency InGaN/GaN structures emitting at 540 nm. 
01-06-2006

McAleese C, Costa PMFJ, Graham DM, Xiu H, Barnard JS, Kappers MJ, Dawson P, Godfrey MJ and Humphreys CJ (2006). Electric fields in AlGaN/GaN quantum well structures. 
01-06-2006

Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ and Brown PD (2006). Effects of KOH etching on the properties of Ga-polar n-GaN surfaces. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (16), 2315-2327.  
01-06-2006

Kazemian P, Twitchett AC, Humphreys CJ and Rodenburg C (2006). Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens. Applied Physics Letters, AIP Publishing vol. 88 (21) 
22-05-2006

Cherns PD, McAleese C, Barnard JS, Kappers MJ and Humphreys CJ (2006). A TEM investigation of crack reduction in AlGaN/GaN heterostructures using an AlN interlayer. 
15-05-2006

Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2006). Microstructure and strain-free lattice parameters of ScxGa 1-xN films. 
15-05-2006

Van Der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2006). Quantum well network structures: Investigating long-range thickness fluctuations in single InGaN/GaN quantum wells. 
15-05-2006

Wong ASW, Ho GW, Dunin-Borkowski R, Kasama T, Oliver RA, Costa PMFJ and Humphreys CJ (2006). The mean inner potential of GaN measured from nanowires using off-axis electron holography. 
15-05-2006

Costa PMFJ, Datta R, Kappers MJ, Vickers ME and Humphreys CJ (2006). Misfit dislocations in green-emitting InGaN/GaN quantum well structures. 
15-05-2006

Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations. 
15-05-2006

Charles MB, Zhang Y, Kappers MJ and Humphreys CJ (2006). Progress in MOVPE growth of crack‐free AlGaN based Bragg reflectors on Si(111). 
01-05-2006

Kenyon AJ, Chryssou CE, Smeeton TM, Humphreys CJ and Hole DE (2006). Sensitisation of erbium luminescence in erbium-implanted alumina. 
01-05-2006

Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P, Thrush EJ, Mullins JT and Humphreys CJ (2006). A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers. physica status solidi (a) – applications and materials science, Wiley vol. 203 (7), 1819-1823.  
01-05-2006

Costa PMFJ, Datta R, Kappers MJ, Vickers ME, Humphreys CJ, Graham DM, Dawson P, Godfrey MJ, Thrush EJ and Mullins JT (2006). Misfit dislocations in In‐rich InGaN/GaN quantum well structures. 
01-05-2006

Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Martin RW and Watson IM (2006). Two-photon absorption from single InGaN/GaN quantum dots. Physica E Low-dimensional Systems and Nanostructures, Elsevier vol. 32 (1-2), 119-122.  
01-05-2006

Smeeton TM, Humphreys CJ, Barnard JS and Kappers MJ (2006). The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy. 
17-04-2006

Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3. Journal of Crystal Growth, Elsevier vol. 289 (2), 506-514.  
01-04-2006

Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). SiH₄ exposure of GaN surfaces:: A useful tool for highlighting dislocations. 
01-01-2006

Hollander J, McAleese C, Kappers M and Humphreys C (2006). Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayers. 
01-01-2006

Smeeton T and Humphreys C (2006). Perspectives on Electronic and Optoelectronic Materials. Springer Handbook of Electronic and Photonic Materials  3-15.  
01-01-2006

Xiu H, Costa PM, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ (2006). Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy. MRS Advances, Springer Nature vol. 955 
01-01-2006

Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ and Humphreys CJ (2005). Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells. Journal of Applied Physics, AIP Publishing vol. 98 (5) 
01-09-2005

Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2005). Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by MOVPE. 
25-08-2005

Charles MB, Kappers MJ and Humphreys CJ (2005). Growth of uncracked Al0.80Ga0.20/GaN DBR on Si(111). 
25-08-2005

Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2005). Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field. Applied Physics Letters, AIP Publishing vol. 86 (21) 
16-05-2005

Vickers ME, Kappers MJ, Datta R, McAleese C, Smeeton TM, Rayment FDG and Humphreys CJ (2005). In-plane imperfections in GaN studied by x-ray diffraction. 
06-05-2005

Humphreys C (2005). Science and the Miracles of Exodus. Europhysics news, EDP Sciences vol. 36 (3), 93-96.  
01-05-2005

Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ and Thrush EJ (2005). Optical and microstructural studies of InGaN∕GaN single-quantum-well structures. Journal of Applied Physics, AIP Publishing vol. 97 (10) 
29-04-2005

Taylor RA, Robinson JW, Rice JH, Lee KH, Jarjour A, Na JH, Yasin S, Oliver RA, Kappers MJ, Humphreys CJ, Briggs GAD, Williams DP, O'Reilly EP, Andreev AD and Arakawa Y (2005). Time-resolved dynamics in single InGaN quantum dots (Invited Paper). Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX. 
13-04-2005

Charles MB, Kappers MJ and Humphreys CJ (2005). The effect of AlGaN and SiN interlayers on GaN/Si(111). 
01-02-2005

Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2005). Reduction of threading dislocation density using in-situ SiNx interlayers. 
01-01-2005

Oliver RA, van der Laak NK, Kappers MJ and Humphreys CJ (2005). Evolution of InGaN/GaN nanostructures and wetting layers during annealing. 
01-01-2005

Barnard JS, Graham DM, Smeeton TM, Kappers MJ, Dawson P, Godfrey M and Humphreys CJ (2005). InGaN-GaN quantum wells: their luminescent and nano-structural properties. 
01-01-2005

Wong ASW, Ho GW, Costa PMFJ, Oliver RA and Humphreys CJ (2005). Self-catalytic growth of gallium nitride nanoneedles under Garich conditions. 
01-01-2005

Cherns PD, McAleese C, Kappers MJ and Humphreys CJ (2005). A TEM Study of A1N Interlayer Defects in AlGaN/GaN Heterostructures. 
01-01-2005

van der Laak NK, Oliver RA, Kappers MJ, McAleese C and Humphreys CJ (2005). Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes. 
01-01-2005

Ofori AP, Rossouw CJ and Humphreys CJ (2005). Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI. Acta Materialia, Elsevier vol. 53 (1), 97-110.  
01-01-2005

Lee KH, Robinson WJ, Rice HJ, Na JH, Taylor AR, Oliver RA, Kappers MJ and Humphreys CJ (2005). Simulation of the Quantum-Confined Stark Effect in a Single InGaN Quantum Dot. NUSOD '05. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices, 2005.. 
01-01-2005

van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2005). Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wells. MRS Advances, Springer Nature vol. 892 (1) 
01-01-2005

Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2005). Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films. MRS Advances, Springer Nature vol. 892 (1) 
01-01-2005

Cherns PD, McAleese C, Barnard JS, Kappers MJ and Humphreys CJ (2005). A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer. MRS Advances, Springer Nature vol. 892 (1) 
01-01-2005

Costa PM, Datta R, Kappers MJ, Vickers ME and Humphreys CJ (2005). Misfit dislocations in green-emitting InGaN/GaN quantum well structures. MRS Advances, Springer Nature vol. 892 
01-01-2005

Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2005). SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations. MRS Advances, Springer Nature vol. 892 (1) 
01-01-2005

Wong ASW, Ho GW, Dunin-Borkowski RE, Kasama T, Oliver RA, Costa PM and Humphreys CJ (2005). The mean inner potential of GaN measured from nanowires using off-axis electron holography. MRS Advances, Springer Nature vol. 892 
01-01-2005

Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2004). Growth modes in heteroepitaxy of InGaN on GaN. Journal of Applied Physics, AIP Publishing vol. 97 (1) 
16-12-2004

McAleese C, Kappers MJ, Rayment FDG, Cherns P and Humphreys CJ (2004). Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN. 
01-12-2004

Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2004). The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy. 
01-12-2004

Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ and Hole DE (2004). Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina. Applied Physics Letters, AIP Publishing vol. 85 (22), 5200-5202.  
29-11-2004

Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image. Applied Physics Letters, AIP Publishing vol. 85 (16), 3411-3413.  
18-10-2004

Datta R, Kappers MJ, Vickers ME, Barnard JS and Humphreys CJ (2004). Growth and characterisation of GaN with reduced dislocation density. 
01-10-2004

Yan J, Kappers MJ, Crossley A, McAleese C, Phillips WA and Humphreys CJ (2004). Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN. 
10-09-2004

Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Yasin S and Humphreys CJ (2004). Photoluminescence Studies of Exciton Recombination and Dephasing in Single Ingan Quantum Dots. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers (IEEE) vol. 3 (3), 343-347.  
01-09-2004

Yan J, Kappers MJ, Barber ZH and Humphreys CJ (2004). Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN. 
01-07-2004

KAZEMIAN P (2004). Effect of experimental parameters on doping contrast of Si p?n junctions in a FEG-SEM. 
01-06-2004

Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ (2004). Temporal variation in photoluminescence from single InGaN quantum dots. Applied Physics Letters, AIP Publishing vol. 84 (20), 4110-4112.  
17-05-2004

Humphreys C (2004). Can a Materials Scientist Move Mount Sinai? MRS Bulletin, Springer Nature vol. 29 (4), 222-223.  
01-04-2004

Moldovan G, Harrison I, Humphreys CJ, Kappers M and Brown PD (2004). Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts. Materials Science and Technology, SAGE Publications vol. 20 (4), 533-538.  
01-04-2004

Kaestner B, Schönjahn C and Humphreys CJ (2004). Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope. Applied Physics Letters, AIP Publishing vol. 84 (12), 2109-2111.  
22-03-2004

Taylor RA, Robinson JW, Rice JH, Jarjour A, Smith JD, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ and Arakawa Y (2004). Dynamics of single InGaN quantum dots. 
01-03-2004

Belyaev AE, Makarovsky O, Walker DJ, Eaves L, Foxon CT, Novikov SV, Zhao LX, Dykeman RI, Danylyuk SV, Vitusevich SA, Kappers MJ, Barnard JS and Humphreys CJ (2004). Resonance and current instabilities in AlN/GaN resonant tunnelling diodes. 
01-03-2004

Rice JH, Oliver RA, Robinson JW, Smith JD, Taylor RA, Briggs GAD, Kappers MJ, Humphreys CJ and Yasin S (2004). InGaN quantum dots grown by MOVPE via a droplet epitaxy route. 
01-03-2004

Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S and Arakawa Y (2004). Time‐integrated and time‐resolved photoluminescence studies of InGaN quantum dots. 
01-02-2004

Campbell LC, Wilkinson MJ, Manz A, Camilleri P and Humphreys CJ (2004). Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries. Lab on a Chip, Royal Society of Chemistry (RSC) vol. 4 (3), 225-229.  
01-01-2004

Ofori AP, Humpherys CJ, Tin S and Jones CN (2004). A TEM Study of the Effect of Platinum Group Metals in Advanced Single Crystal Nickel-Base Superalloys. Superalloys 2004 (Tenth International Symposium). 
01-01-2004

Hobbs RA, Tin S, Rae CMF, Broomfield RW and Humphreys CJ (2004). Solidification Characteristics of Advanced Nickel-Base Single Crystal Superalloys. Superalloys 2004 (Tenth International Symposium). 
01-01-2004

Chen GS, Chen G-S, Hsiao HH, Louh RF and Humphreys CJ (2004). Improving Thermal Stability of LiMn2 O 4 Thin Films by In Situ Coating of α ­ MnO2 Using High-Pressure and High-Temperature Sputtering. Electrochemical and Solid-State Letters, The Electrochemical Society vol. 7 (8), a235-a238.  
01-01-2004

Kazemian P, Rodenburg C and Humphreys CJ (2004). Effect of experimental parameters on doping contrast of Si p-n junctions in a FEG-SEM. 
01-01-2004

Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE. MRS Advances, Springer Nature vol. 831 
01-01-2004

Charles MB, Kappers MJ and Humphreys CJ (2004). Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111). MRS Advances, Springer Nature vol. 831 (1), 377-381.  
01-01-2004

Smeeton TM, Kappers MJ, Barnard JS, Vickers ME and Humphreys CJ (2003). Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope. Applied Physics Letters, AIP Publishing vol. 83 (26), 5419-5421.  
29-12-2003

Arutyunov NY, Emtsev VV, Mikhailin AV and Humphreys CJ (2003). Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR data. 
01-12-2003

Oliver RA, Kappers MJ, Rice JH, Smith JD, Taylor RA, Humphreys CJ and Briggs GAD (2003). Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal. 
24-11-2003

Foxon CT, Novikov SV, Belyaev AE, Zhao LX, Makarovsky O, Walker DJ, Eaves L, Dykeman RI, Danylyuk SV, Vitusevich SA, Kappers MJ, Barnard JS and Humphreys CJ (2003). Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures. 
24-11-2003

Smeeton TM, Kappers MJ, Barnard JS, Vickers ME and Humphreys CJ (2003). Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy. 
01-11-2003

Graham DM, Vala AS, Dawson P, Godfrey MJ, Kappers MJ, Smeeton TM, Barnard JS, Humphreys CJ and Thrush EJ (2003). Exciton localization in InGaN/GaN single quantum well structures. 
01-11-2003

Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ and Humphreys CJ (2003). Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]. Applied Physics Letters, AIP Publishing vol. 83 (17), 3626-3627.  
27-10-2003

Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ and Arakawa Y (2003). Time-resolved dynamics in single InGaN quantum dots. Applied Physics Letters, AIP Publishing vol. 83 (13), 2674-2676.  
29-09-2003

Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ and Foxon CT (2003). Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates. Journal of Crystal Growth, Elsevier vol. 256 (3-4), 237-242.  
01-09-2003

Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS and Humphreys CJ (2003). Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering. Journal of Applied Physics, AIP Publishing vol. 94 (3), 1565-1574.  
01-08-2003

Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD and Taylor RA (2003). InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Applied Physics Letters, AIP Publishing vol. 83 (4), 755-757.  
28-07-2003

Schönjahn C, Broom RF, Humphreys CJ, Howie A and Mentink SAM (2003). Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector. Applied Physics Letters, AIP Publishing vol. 83 (2), 293-295.  
14-07-2003

Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ and Bougrioua Z (2003). Detailed interpretation of electron transport in n-GaN. Journal of Applied Physics, AIP Publishing vol. 93 (11), 9095-9103.  
01-06-2003

Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ and Humphreys CJ (2003). Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. Applied Physics Letters, AIP Publishing vol. 82 (17), 2755-2757.  
28-04-2003

Keast VJ, Kappers MJ and Humphreys CJ (2003). Electron energy‐loss near edge structure (ELNES) of InGaN quantum wells. 
01-04-2003

Foxon CT, Novikov SV, Li T, Campion RP, Winser AJ, Harrison I, Kappers MJ and Humphreys CJ (2003). Arsenic incorporation in GaN during growth by molecular beam epitaxy. 
01-04-2003