Prof Colin Humphreys
School of Engineering and Materials Science
Queen Mary University of London
Queen Mary University of London
Publications
Publications of specific relevance to the Centre for Sustainable Engineering2024
Weng Z, Wingfield B, Evans P, Baginski P, Kainth J, Nikolaenko A, Lee LY, Baginska J, Gillin W, Guiney I, Humphreys C and Fenwick O (2024). Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers. ACS Applied Electronic Materials, American Chemical Society 16-09-2024
2023
Weng Z, Dixon S, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2023). Wafer-scale transfer-free graphene as an ITO replacement for OLEDs. 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC). 25-10-2023
2022
Humphreys C (2022). From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 28 (S1), 2736-2737. 01-08-2022
Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ and Humphreys CJ (2022). Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene. Physical Review B, American Physical Society vol. 105 (16) 13-04-2022
Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2022). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022). Advanced Optical Materials vol. 10 (3), 2270012-2270012. 05-02-2022
Saifullah MSM, Boothroyd CB, Botton GA and Humphreys CJ (2022). Electron beam damage in titanium dioxide films. 05-01-2022
Campbell LCI, Foord DT and Humphreys CJ (2022). ‘Nano-machining’ using a focused ion beam. 05-01-2022
Natusch MKH, Botton GA, Humphreys CJ and Krivanek OL (2022). Modelling of electron energy-loss spectroscopy detection limits. 05-01-2022
Pekarskaya E, Botton GA, Jones CN and Humphreys CJ (2022). Martensitic transformation and characterisation of the structure of a NiAl - Ni3Al alloy. 05-01-2022
Walther T and Humphreys CJ (2022). Quantification of the composition of silicon germanium / silicon structures by high-angle annular dark field imaging. 05-01-2022
Hölzl M, Bottond GA, Nelhiebel M, Humphreys CJ, Jouffrey B, Grogger W, Hofer F and Schattschneider P (2022). Observation of the mixed dynamic form factor in the Ag M4,5-edge. 05-01-2022
Sun YW, Gehringer D, Holec D, Papageorgiou DG, Fenwick O, Qureshi SM, Humphreys CJ and Dunstan DJ (2022). Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials. Physical Review B, American Physical Society vol. 105 (2) 05-01-2022
Tricker DM, Brown PD, Xin Y, Cheng TS, Foxon CT and Humphreys CJ (2022). The relationship between epitaxial growth, defect microstructure and luminescence in GaN. Electron Microscopy and Analysis 1997 429-432. 05-01-2022
2021
Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2021). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes. Advanced Optical Materials, Wiley, 2101675-2101675. 20-12-2021
Pristovsek M, Frentrup M, Zhu T, Kusch G and Humphreys CJ (2021). X-ray characterisation of the basal stacking fault densities of (112̄2) GaN. CrystEngComm, Royal Society of Chemistry vol. 23 (35), 6059-6069. 03-08-2021
Sun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C and Dunstan DJ (2021). Mechanical Properties of Graphene. Applied Physics Reviews, AIP Publishing 19-04-2021
Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ and Humphreys CJ (2021). Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]. Physical Review B vol. 103 (11), 119901-119901. 01-03-2021
Kvam EP, Eaglesham DJ, Humphreys CJ, Maher DM, Bean JC and Eraser HL (2021). Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100). Microscopy of Semiconducting Materials, 1987 165-168. 31-01-2021
2020
Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG and Humphreys CJ (2020). Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites. Scientific Reports, Nature Publishing Group vol. 10 24-09-2020
Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM, Humphreys CJ and Su L (2020). Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films. ACS Nano, American Chemical Society 27-08-2020
S N, Guiney I, Humphreys CJ, Sen P, Muralidharan R and Nath DN (2020). Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 38 (3) 09-04-2020
Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D and Humphreys C (2020). Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers. Physical Review B: Condensed Matter and Materials Physics, American Physical Society vol. 101 20-03-2020
Halsall MP, Crowe I, Oliver R, Kappers MJ and Humphreys CJ (2020). Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation). Gallium Nitride Materials and Devices XV. 10-03-2020
2019
Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2019). A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. physica status solidi (a) – applications and materials science, Wiley vol. 217 (7) 29-12-2019
Zhou B, Das A, Kappers M, Oliver R, Humphreys C and Krause S (2019). InGaN as a substrate for AC photoelectrochemical imaging. Sensors, MDPI 11-10-2019
Griffiths JT, Rivarola FWR, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY, De La Pena F, Price MB, Howkins A, Boyd I, Humphreys CJ, Greenham NC and Ducati C (2019). Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals. ACS Applied Energy Materials, American Chemical Society (ACS) vol. 2 (10), 6998-7004. 07-10-2019
Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ and Humphreys C (2019). 3D strain in 2D materials: to what extent is monolayer graphene graphite? Physical Review Letters, American Physical Society vol. 123, 135501-135501. 25-09-2019
Tang F, Zhu T, Fu W-Y, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL, Bagot PAJ, Moody MP, Patra SK, Schulz S, Dawson P, Church S, Jacobs J and Oliver RA (2019). Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates. Journal of Applied Physics, AIP Publishing vol. 125 (22) 11-06-2019
Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G, Edwards PR, Kappers MJ, McAleese C, Moram MA, Humphreys CJ, Dawson P and Oliver RA (2019). Optical and structural properties of dislocations in InGaN. Journal of Applied Physics, AIP Publishing vol. 125 (16) 23-04-2019
Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA and Dawson P (2019). Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength. JAPANESE JOURNAL OF APPLIED PHYSICS vol. 58 23-04-2019
Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ and Dunstan DJ (2019). Effect of humidity on the interlayer interaction of bilayer graphene. Physical Review B vol. 99 (4) 02-01-2019
2018
Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2018). Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 66 (1), 613-618. 07-12-2018
Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA and Humphreys CJ (2018). What is red? On the chromaticity of orange-red InGaN/GaN based LEDs. Journal of Applied Physics, AIP Publishing vol. 124 (18) 09-11-2018
Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ and Humphreys CJ (2018). Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells. ACS Photonics, American Chemical Society (ACS) vol. 5 (11), 4437-4446. 17-10-2018
Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA and Dawson P (2018). Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. Physical Review B, American Physical Society (APS) vol. 98 (15) 01-10-2018
Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R and Dawson P (2018). Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. Materials, MDPI vol. 11 (9) 15-09-2018
Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ and Wallis DJ (2018). Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. Journal of Applied Physics, AIP Publishing vol. 124 (10) 11-09-2018
Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ, Oliver RA and Wallis DJ (2018). Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics, AIP Publishing vol. 124 (5) 03-08-2018
Humphreys C and Waddington G (2018). Response to letter from Wayne Osborn. Astronomy and Geophysics vol. 59 (4) 01-08-2018
Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE and Oliver RA (2018). Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 24 (S1), 4-5. 01-08-2018
Cho S, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C and Thayne IG (2018). Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs. Electronics Letters, Institution of Engineering and Technology (IET) vol. 54 (15), 947-949. 01-07-2018
Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P, Wallis DJ, Humphreys CJ, Chalker PR and Houston PA (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics, AIP Publishing vol. 123 (18) 14-05-2018
Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P (2018). Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. Journal of Applied Physics, AIP Publishing vol. 123 (18) 10-05-2018
Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ and Dawson P (2018). Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures. Journal of Physics Condensed Matter, IOP Publishing vol. 30 (17) 09-04-2018
Massabuau FC-P, Chen P, Rhode SL, Horton MK, O'Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA (2018). Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties. Gallium Nitride Materials and Devices XIII. 23-02-2018
Humphreys C and Waddington G (2018). Illuminating theory on early solar eclipse. Astronomy and Geophysics vol. 59 (1) 01-02-2018
Nixon D, Humphreys C and Waddington G (2018). Moon village: show us the money. Astronomy & Geophysics, Oxford University Press (OUP) vol. 59 (1), 1.8-1.8. 01-02-2018
Keast VJ, Sharma N and Humphreys CJ (2018). Energy-loss spectroscopy of GaN alloys and quantum wells. 18-01-2018
Sharma N, Kappers M, Barnard J, Vickers M and Humphreys C (2018). Chemical mapping of InGaN/GaN LEDs. 18-01-2018
Makaronidis G, McAleese C, Barnard JS and Humphreys CJ (2018). Effects of AIN and GaN low-temperature interlayers on the dislocation behaviour of AlGaN and GaN grown by MOCVD. 10-01-2018
Barnard JS, Kappers MJ, Thrush EJ and Humphreys CJ (2018). Electrostatic fields in InGaN/GaN single quantum wells and their variation with indium content, using off-axis holography and energy filtered TEM. 10-01-2018
Barnard JS, Vickers ME, Kappers MJ, Thrush EJ and Humphreys CJ (2018). A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEM. 10-01-2018
Kazemian P, Schönjahn C and Humphreys CJ (2018). Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope. 10-01-2018
Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL, Bagot PA, Moody MP, Humphreys CJ, Houston PA, Oliver RA and Wallis DJ (2018). Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics, AIP Publishing vol. 123 (2) 09-01-2018
Kazemian P, Schönjahn C and Humphreys CJ (2018). Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope. Microscopy of Semiconducting Materials 2003 593-596. 01-01-2018
2017
Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA and Humphreys CJ (2017). The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes. Journal of Applied Physics, AIP Publishing vol. 122 (23) 21-12-2017
Xiu H, Thrush EJ, Zhao L, Phillips A and Humphreys CJ (2017). Degradation of in GaN/GaN Laser Diodes Investigated By Cross-Sectional Electron Beam Induced Current Imaging. 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS). 01-11-2017
Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2017). Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 64 (12), 4868-4874. 11-10-2017
Humphreys C and Waddington G (2017). Solar eclipse of 1207 BC helps to date pharaohs. Astronomy & Geophysics, Oxford University Press (OUP) vol. 58 (5), 5.39-5.42. 01-10-2017
Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ and Johnson PA (2017). Machine Learning Predicts Laboratory Earthquakes. Geophysical Research Letters vol. 44 (18), 9276-9282. 28-09-2017
Frentrup M, Lee LY, Sahonta S-L, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ and Wallis DJ (2017). X-ray diffraction analysis of cubic zincblende III-nitrides. Journal of Physics D, IOP Publishing vol. 50 (43) 26-09-2017
Humphreys C (2017). Ahmed Zewail — A Towering Visionary. Personal and Scientific Reminiscences 137-139. 04-08-2017
Rouet-Leduc B, Hulbert C, Barros K, Lookman T and Humphreys CJ (2017). Automatized convergence of optoelectronic simulations using active machine learning. Applied Physics Letters, AIP Publishing vol. 111 (4) 24-07-2017
Floros K, Li X, Guiney I, Cho S, Hemakumara D, Wallis DJ, Wasige E, Moran DAJ, Humphreys CJ and Thayne IG (2017). Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐ and Ni‐based gate stacks. 20-07-2017
Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA (2017). Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties. Nano Letters, American Chemical Society (ACS) vol. 17 (8), 4846-4852. 18-07-2017
Eblabla A, Benakaprasad B, Li X, Wallis DJ, Guiney I, Humphreys C and Elgaid K (2017). Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC). 2017 18th International Radar Symposium (IRS). 01-06-2017
Massabuau F, Kappers M, Humphreys C and Oliver R (2017). Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth. 22-05-2017
Griffiths JT, Ren CX, Coulon P-M, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I, Martin RW, Allsopp DWE, Shields PA, Humphreys CJ and Oliver RA (2017). Structural impact on the nanoscale optical properties of InGaN core-shell nanorods. Applied Physics Letters, AIP Publishing vol. 110 (17) 24-04-2017
Church SA, Hammersley S, Mitchell PW, Kappers MJ, Sahonta SL, Frentrup M, Nilsson D, Ward PJ, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P (2017). Photoluminescence studies of cubic GaN epilayers. 21-02-2017
Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ, Humphreys CJ and Houston PA (2017). All-GaN-Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers (IEEE) vol. 32 (11), 8743-8750. 17-02-2017
Guiney I, Thomas S and Humphreys CJ (2017). Single-step manufacturing process for the production of graphene-V/III LED heterostructures. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI. 16-02-2017
Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ and Oliver RA (2017). The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. Ultramicroscopy, Elsevier vol. 176, 93-98. 03-02-2017
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2017). Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, Elsevier vol. 459, 185-188. 01-02-2017
Kim J-Y, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke N-J, Langridge S, Stankiewicz R, Humphreys CJ, Cowburn RP, Holmes SN and Barnes CHW (2017). Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001). Journal of Applied Physics, AIP Publishing vol. 121 (4) 24-01-2017
Coulon P-M, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ, Oliver RA, Allsopp DWE and Shields PA (2017). Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure. Crystal Growth & Design, American Chemical Society (ACS) vol. 17 (2), 474-482. 11-01-2017
Massabuau F, Piot N, Frentrup M, Wang X, Avenas Q, Kappers M, Humphreys C and Oliver R (2017). X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface. 06-01-2017
Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ, Humphreys CJ, Dunin-Borkowski RE and Oliver RA (2017). Carrier localization in the vicinity of dislocations in InGaN. Journal of Applied Physics, AIP Publishing vol. 121 (1) 03-01-2017
Humphreys CJ (2017). Preventing cracking in the growth of low-cost GaN LEDs on large-area Si. 01-01-2017
Smeeton T and Humphreys C (2017). Perspectives on Electronic and Photonic Materials. Springer Handbook of Electronic and Photonic Materials 1-1. 01-01-2017
2016
Griffiths J, Zhang S, Lhuillier J, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R (2016). Impact of high energy electrons on nitrides for nanocathodoluminescence. European Microscopy Congress 2016: Proceedings 1044-1045. 20-12-2016
Griffiths J, Zhang S, Rouet‐Leduc B, Fu WY, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R (2016). Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping. European Microscopy Congress 2016: Proceedings 562-563. 20-12-2016
Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Applied Physics Letters, AIP Publishing vol. 109 (23) 05-12-2016
Novikov SV, Staddon CR, Sahonta S-L, Oliver RA, Humphreys CJ and Foxon CT (2016). Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth, Elsevier vol. 456, 151-154. 01-12-2016
Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ and Graham DM (2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. Solid State Communications, Elsevier vol. 247, 68-71. 01-12-2016
Schulz S, Tanner DSP, O'Reilly EP, A. M, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells. Applied Physics Letters, AIP Publishing vol. 109 (22) 28-11-2016
Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ, Schulz S, Tang F and Oliver RA (2016). A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates. Sci Technol Adv Mater vol. 17 (1), 736-743. 10-11-2016
Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D, Wallis DJ, Humphreys CJ and Oliver RA (2016). Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold. Journal of Applied Physics, AIP Publishing vol. 120 (16) 28-10-2016
Benakaprasad B, Eblabla A, Li X, Elgaid K, Wallis DJ, Guiney I and Humphreys C (2016). Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC. 2016 46th European Microwave Conference (EuMC). 01-10-2016
Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ, Leute RAR, Heinz D, Rettig O, Scholz F and Thonke K (2016). Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence. Journal of Applied Physics, AIP Publishing vol. 120 (8) 23-08-2016
Muhammed MM, Roldan MA, Yamashita Y, Sahonta S-L, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ and Roqan IS (2016). High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer. Scientific Reports, Springer Nature vol. 6 (1) 14-07-2016
Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D, Choi P-P, Raabe D, Brunner F and Weyers M (2016). Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0). Semiconductor Science and Technology, IOP Publishing vol. 31 (8) 12-07-2016
Presa S, Maaskant PP, Kappers MJ, Humphreys CJ and Corbett B (2016). Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes. AIP Advances, AIP Publishing vol. 6 (7) 01-07-2016
Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Applied Physics Letters, AIP Publishing vol. 108 (25) 20-06-2016
Corbett B, Lymperakis L, Scholz F, Humphreys C, Brunner F and Meyer T (2016). Scalable semipolar gallium nitride templates for high-speed LEDs. SPIE Newsroom, SPIE, the international society for optics and photonics 03-06-2016
Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique. Applied Physics Letters, AIP Publishing vol. 108 (21) 23-05-2016
Dawson P, Schulz S, Oliver RA, Kappers MJ and Humphreys CJ (2016). The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics vol. 119 (18) 14-05-2016
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2016). Characterization of p-GaN1−x As x /n-GaN PN junction diodes. Semiconductor Science and Technology, IOP Publishing vol. 31 (6) 12-05-2016
Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Kappers MJ, Humphreys CJ and Oliver RA (2016). The microstructure of non-polar a-plane (11 2 ¯0) InGaN quantum wells. Journal of Applied Physics, AIP Publishing vol. 119 (17) 02-05-2016
Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2016). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016). physica status solidi (b), Wiley vol. 253 (5), 1024-1024. 01-05-2016
Rouet-Leduc B, Barros K, Lookman T and Humphreys CJ (2016). Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning. Scientific Reports, Springer Nature vol. 6 (1) 26-04-2016
Pristovsek M, Humphreys CJ, Bauer S, Knab M, Thonke K, Kozlowski G, O’Mahony D, Maaskant P and Corbett B (2016). Comparative study of (0001) and InGaN based light emitting diodes. 15-04-2016
Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA and Humphreys CJ (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. physica status solidi (c) 14-04-2016
Chatterjee I, Uren MJ, Pooth A, Karboyan S, Martin-Horcajo S, Kuball M, Lee KB, Zaidi Z, Houston PA, Wallis DJ, Guiney I and Humphreys CJ (2016). Impact of Buffer Charge on the Reliability of Carbon Doped AIGaN/GaN-on-Si HEMTs. 2016 IEEE International Reliability Physics Symposium (IRPS). 01-04-2016
Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K and Scholz F (2016). Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates. Journal of Crystal Growth, Elsevier vol. 440, 69-75. 01-04-2016
Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S, Sonsky J and Kuball M (2016). Subthreshold Mobility in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 63 (5), 1861-1865. 30-03-2016
Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon P-M, Cherns D, Martin RW, Humphreys CJ, Bowen CR, Allsopp DWE and Shields PA (2016). Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods. Crystal Growth & Design, American Chemical Society (ACS) vol. 16 (4), 1907-1916. 23-03-2016
Rhode SL, Horton MK, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ, Dusane RO and Moram MA (2016). Dislocation core structures in (0001) InGaN. Journal of Applied Physics, AIP Publishing vol. 119 (10) 09-03-2016
Corbett B, Quan Z, Dinh DV, Kozlowski G, O'Mahony D, Akhter M, Schulz S, Parbrook P, Maaskant P, Caliebe M, Hocker M, Thonke K, Scholz F, Pristovsek M, Han Y, Humphreys CJ, Brunner F, Weyers M, Meyer TM and Lymperakis L (2016). Development of semipolar (11-22) LEDs on GaN templates. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX. 08-03-2016
Gîrgel I, Edwards PR, Le Boulbar E, Coulon P-M, Sahonta S-L, Allsopp DWE, Martin RW, Humphreys CJ and Shields PA (2016). Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes. 07-03-2016
Novikov SV, Staddon CR, Sahonta S, Oliver RA, Humphreys CJ and Foxon CT (2016). Molecular beam epitaxy of free‐standing bulk wurtzite AlxGa1‐xN layers using a highly efficient RF plasma source. 25-02-2016
Hammersley S, Dawson P, Kappers MJ, Massabuau FC, Frentrup M, Oliver RA and Humphreys CJ (2016). Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs. 17-02-2016
Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D and Humphreys CJ (2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, AIP Publishing vol. 108 (7) 15-02-2016
Davies MJ, Hammersley S, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2016). A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. Journal of Applied Physics, AIP Publishing vol. 119 (5) 05-02-2016
Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA and Humphreys CJ (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. 03-02-2016
Dunn A, Spencer BF, Hardman SJO, Graham DM, Hammersley S, Davies MJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2016). Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time‐resolved terahertz and photoluminescence spectroscopy. 03-02-2016
Christian GM, Hammersley S, Davies MJ, Dawson P, Kappers MJ, Massabuau FC, Oliver RA and Humphreys CJ (2016). Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells. 27-01-2016
Han Y, Zhu D, Zhu T, Humphreys CJ and Wallis DJ (2016). Origins of hillock defects on GaN templates grown on Si(111). Journal of Crystal Growth, Elsevier vol. 434, 123-127. 01-01-2016
Kakanakova-Georgieva A, Sahonta S-L, Nilsson D, Trinh XT, Son NT, Janzén E and Humphreys CJ (2016). n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon. Journal of Materials Chemistry C, Royal Society of Chemistry (RSC) vol. 4 (35), 8291-8296. 01-01-2016
Zhu D and Humphreys CJ (2016). Solid-State Lighting Based on Light Emitting Diode Technology. Optics in Our Time 87-118. 01-01-2016
Miaja PF, Jiang S, Lee KB, Guiney I, Wallis DJ, Humphreys CJ, Houston PA and Forsyth AJ (2016). Modelling the Closely-Coupled Cascode Switching Process. 2016 IEEE Energy Conversion Congress and Exposition (ECCE). 01-01-2016
Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz Magnetospectroscopy Studies of an AlGaN/GaN Heterostructure. 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). 01-01-2016
Rae K, Xie E, Foucher C, Guilhabert B, Ferriera R, Zhu D, Wallis DJ, Humphreys CJ, Oliver RA, Gu E, Laurand N and Dawson MD (2016). Transfer printed multi-color integrated devices for visible light communication applications. Light, Energy and the Environment. 01-01-2016
Benakaprasad B, Eblabla A, Li X, Thayne I, Wallis DJ, Guiney I, Humphreys C and Elgaid K (2016). Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology on GaN-on-Low Resistivity Silicon Substrates. 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). 01-01-2016
Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure. Conference on Lasers and Electro-Optics. 01-01-2016
2015
Rhode SL, Horton MK, Fu WY, Sahonta S-L, Kappers MJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Dislocation core structures in Si-doped GaN. Applied Physics Letters, AIP Publishing vol. 107 (24) 14-12-2015
Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2015). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire. physica status solidi (b), Wiley vol. 253 (5), 834-839. 12-12-2015
Schulz S, Tanner DP, O'Reilly EP, A. M, Martin TL, Bagot PAJ, Moody MP, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2015). Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory. Physical Review B, American Physical Society (APS) vol. 92 (23) 01-12-2015
Zhang S, Cui Y, Griffiths JT, Fu WY, Freysoldt C, Neugebauer J, Humphreys CJ and Oliver RA (2015). Difference in linear polarization of biaxially strained InxGa1−xN alloys on nonpolar a-plane and m-plane GaN. Physical Review B, American Physical Society (APS) vol. 92 (24) 01-12-2015
Cho SJ, Roberts JW, Guiney I, Li X, Ternent G, Floros K, Humphreys CJ, Chalker PR and Thayne IG (2015). A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor. 01-11-2015
Griffiths JT, Zhang S, Rouet-Leduc B, Fu WY, Bao A, Zhu D, Wallis DJ, Howkins A, Boyd I, Stowe D, Kappers MJ, Humphreys CJ and Oliver RA (2015). Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping. Nano Letters, American Chemical Society (ACS) vol. 15 (11), 7639-7643. 22-10-2015
Rae K, Xie EY, Trindade AJ, Guilhabert B, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ, Wallis DJ and Dawson MD (2015). Integrated Dual-Color Ingan Light-Emitting Diode Array Through Transfer Printing. 2015 IEEE Photonics Conference (IPC). 01-10-2015
Meneghini M, Zhu D, Humphreys CJ, Berti M, Gasparotto A, Cesca T, Vinattieri A, Bogani F, Meneghesso G and Zanoni E (2015). Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes. AIP Advances, AIP Publishing vol. 5 (10) 01-10-2015
Hammersley S, Kappers MJ, Massabuau FC-P, Sahonta S-L, Dawson P, Oliver RA and Humphreys CJ (2015). Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions. Applied Physics Letters, AIP Publishing vol. 107 (13) 28-09-2015
Pristovsek M, Frentrup M, Han Y and Humphreys CJ (2015). Optimizing GaN () hetero‐epitaxial templates grown on () sapphire. physica status solidi (b), Wiley vol. 253 (1), 61-66. 31-08-2015
Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2015). Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant. Semiconductor Science and Technology, IOP Publishing vol. 30 (10) 18-08-2015
Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K and Scholz F (2015). Growth and coalescence studies of oriented GaN on pre‐structured sapphire substrates using marker layers. physica status solidi (b), Wiley vol. 253 (1), 46-53. 14-08-2015
Waller WM, Karboyan S, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ and Kuball M (2015). Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 62 (8), 2464-2469. 07-07-2015
Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E, Wallis DJ, Watson IM, Humphreys CJ and Dawson MD (2015). Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing. Optics Express, Optica Publishing Group vol. 23 (7), 9329-9338. 02-04-2015
Han Y, Caliebe M, Kappers M, Scholz F, Pristovsek M and Humphreys C (2015). Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire. Journal of Crystal Growth, Elsevier vol. 415, 170-175. 01-04-2015
Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Oliver RA, Humphreys CJ, Allsopp DWE and Martin RW (2015). Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, AIP Publishing vol. 117 (11) 21-03-2015
Kappers MJ, Zhu T, Sahonta S, Humphreys CJ and Oliver RA (2015). SCM and SIMS investigations of unintentional doping in III‐nitrides. 18-03-2015
Lee KB, Guiney I, Jiang S, Zaidi ZH, Qian H, Wallis DJ, Uren MJ, Kuball M, Humphreys CJ and Houston PA (2015). Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V. Applied Physics Express, IOP Publishing vol. 8 (3) 19-02-2015
Horton MK, Rhode S, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Segregation of In to Dislocations in InGaN. Nano Letters, American Chemical Society (ACS) vol. 15 (2), 923-930. 21-01-2015
Sutherland D, Zhu T, Griffiths JT, Tang F, Dawson P, Kundys D, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA (2015). Optical studies of non‐polar m‐plane () InGaN/GaN multi‐quantum wells grown on freestanding bulk GaN. 20-01-2015
2014
Hammersley S, Davies MJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2014). Carrier distributions in InGaN/GaN light‐emitting diodes. physica status solidi (b), Wiley vol. 252 (5), 890-894. 29-12-2014
Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2014). Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, AIP Publishing vol. 116 (24) 22-12-2014
Massabuau FC, Davies MJ, Blenkhorn WE, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures. physica status solidi (b), Wiley vol. 252 (5), 928-935. 19-12-2014
Pristovsek M, Han Y, Zhu T, Frentrup M, Kappers MJ, Humphreys CJ, Kozlowski G, Maaskant P and Corbett B (2014). Low defect large area semi‐polar (112) GaN grown on patterned (113) silicon. 05-12-2014
Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ, Humphreys CJ and Oliver RA (2014). Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method. APL Materials, AIP Publishing vol. 2 (12) 01-12-2014
Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE. Journal of Crystal Growth, Elsevier vol. 408, 32-41. 01-12-2014
Davies MJ, Dawson P, Massabuau FC, Le Fol A, Oliver RA, Kappers MJ and Humphreys CJ (2014). A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures. physica status solidi (b), Wiley vol. 252 (5), 866-872. 14-11-2014
Dinh DV, Oehler F, Zubialevich VZ, Kappers MJ, Alam SN, Caliebe M, Scholtz F, Humphreys CJ and Parbrook PJ (2014). Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy. Journal of Applied Physics, AIP Publishing vol. 116 (15) 16-10-2014
Trindade AJ, Guilhabert B, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ, Wallis DJ and Dawson MD (2014). Capillary-Bonding of Thin LEDs onto Non-Native Substrates by Transfer-Printing. 2014 IEEE Photonics Conference. 01-10-2014
Lozano JG, Yang H, Guerrero-Lebrero MP, D'Alfonso AJ, Yasuhara A, Okunishi E, Zhang S, Humphreys CJ, Allen LJ, Galindo PL, Hirsch PB and Nellist PD (2014). Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride. Physical Review Letters, American Physical Society (APS) vol. 113 (13) 24-09-2014
Massabuau FC-P, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T, Hopkins MA, Humphreys CJ, Dawson P, Dunin-Borkowski RE, Etheridge J, Allsopp DWE and Oliver RA (2014). The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem. Applied Physics Letters, AIP Publishing vol. 105 (11) 15-09-2014
Rhode SL, Fu WY, Moram MA, Massabuau FC-P, Kappers MJ, McAleese C, Oehler F, Humphreys CJ, Dusane RO and Sahonta S (2014). Structure and strain relaxation effects of defects in InxGa1−xN epilayers. Journal of Applied Physics, AIP Publishing vol. 116 (10) 10-09-2014
Davies MJ, Dawson P, Massabuau FC-P, Oliver RA, Kappers MJ and Humphreys CJ (2014). The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures. Applied Physics Letters, AIP Publishing vol. 105 (9) 01-09-2014
Trager-Cowan C, Naresh-Kumar G, Allehiani N, Kraeusel S, Hourahine B, Vespucci S, Thomson D, Bruckbauer J, Kusch G, Edwards PR, Martin RW, Mauder C, Day AP, Winkelmann A, Vilalta-Clemente A, Wilkinson AJ, Parbrook PJ, Kappers MJ, Moram MA, Oliver RA, et al. (2014). Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors. 01-08-2014
Humphreys C (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World's Energy Problems. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 20 (S3), xcvii-c. 01-08-2014
Humphreys C and Ford BJ (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy Problems. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 20 (S2), 11-14. 29-07-2014
Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Allsopp DWE, Oliver RA, Humphreys CJ and Martin RW (2014). Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Journal of Applied Physics, AIP Publishing vol. 116 (3) 18-07-2014
Möreke J, Uren MJ, Novikov SV, Foxon CT, Vajargah SH, Wallis DJ, Humphreys CJ, Haigh SJ, Al-Khalidi A, Wasige E, Thayne I and Kuball M (2014). Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, AIP Publishing vol. 116 (1) 03-07-2014
Nellist PD, Hirsch PB, Rhode S, Horton MK, Lozano JG, Yasuhara A, Okunishi E, Zhang S, Sahonta S-L, Kappers MJ, Humphreys CJ and Moram MA (2014). A dissociation mechanism for the [a+c] dislocation in GaN. 11-06-2014
Lozano JG, Guerrero-Lebrero MP, Yasuhara A, Okinishi E, Zhang S, Humphreys CJ, Galindo PL, Hirsch PB and Nellist PD (2014). Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM. 11-06-2014
Calciati M, Goano M, Bertazzi F, Vallone M, Zhou X, Ghione G, Meneghini M, Meneghesso G, Zanoni E, Bellotti E, Verzellesi G, Zhu D and Humphreys C (2014). Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues. AIP Advances, AIP Publishing vol. 4 (6) 01-06-2014
Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Zhu D and Humphreys C (2014). Dislocation-related trap levels in nitride-based light emitting diodes. Applied Physics Letters, AIP Publishing vol. 104 (21) 26-05-2014
Kundys D, Schulz S, Oehler F, Sutherland D, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2014). Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. Journal of Applied Physics, AIP Publishing vol. 115 (11) 21-03-2014
Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FC-P, Oehler F, Oliver RA and Humphreys CJ (2014). Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells. Journal of Applied Physics, AIP Publishing vol. 115 (11) 18-03-2014
Bruckbauer J, Edwards PR, Sahonta S-L, Massabuau FC-P, Kappers MJ, Humphreys CJ, Oliver RA and Martin RW (2014). Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures. Journal of Physics D, IOP Publishing vol. 47 (13) 11-03-2014
Vinattieri A, Batignani F, Bogani F, Meneghini M, Meneghesso G, Zanoni E, Zhu D and Humphreys CJ (2014). Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing. 21-02-2014
Mutta GR, Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Meneghesso G, Zhu D and Humphreys C (2014). Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices. 21-02-2014
Massabuau FC, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA (2014). The impact of growth parameters on trench defects in InGaN/GaN quantum wells. physica status solidi (a) – applications and materials science, Wiley vol. 211 (4), 740-743. 14-02-2014
Davies MJ, Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2014). High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime. 01-02-2014
Sutherland D, Oehler F, Zhu T, Griffiths JT, Badcock TJ, Dawson P, Emery RM, Kappers MJ, Humphreys CJ and Oliver RA (2014). An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire. 01-02-2014
Badcock TJ, Dawson P, Davies MJ, Oliver RA, Kappers MJ and Humphreys CJ (2014). Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures. 28-01-2014
Davies MJ, Massabuau FC, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2014). Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures. 28-01-2014
Davies MJ, Dawson P, Massabuau FC, Oehler F, Oliver RA, Kappers MJ, Badcock TJ and Humphreys CJ (2014). The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells. physica status solidi (c), Wiley vol. 11 (3‐4), 750-753. 28-01-2014
Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD (2014). Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. Journal of Applied Physics, AIP Publishing vol. 115 (3) 21-01-2014
Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2014). The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method. Journal of Crystal Growth, Elsevier vol. 386, 88-93. 01-01-2014
2013
Zhang S, Fu WY, Holec D, Humphreys CJ and Moram MA (2013). Elastic constants and critical thicknesses of ScGaN and ScAlN. Journal of Applied Physics, AIP Publishing vol. 114 (24) 28-12-2013
Zhang S, Zhang Y, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS and Humphreys CJ (2013). Interfacial Structure and Chemistry of GaN on Ge(111). Physical Review Letters, American Physical Society (APS) vol. 111 (25) 16-12-2013
Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson MD (2013). Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates. Applied Physics Letters, AIP Publishing vol. 103 (25) 16-12-2013
Massabuau FC-P, Trinh-Xuan L, Lodié D, Sahonta S-L, Rhode S, Thrush EJ, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA (2013). Towards a better understanding of trench defects in InGaN/GaN quantum wells. 29-11-2013
Zhu D and Humphreys CJ (2013). Low-cost high-efficiency GaN LED on large-area si substrate. 15-11-2013
Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ and Trager-Cowan C (2013). Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 20 (1), 55-60. 12-11-2013
Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ and Oliver RA (2013). Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges. Journal of Crystal Growth, Elsevier vol. 383, 12-18. 01-11-2013
Zhang S, Holec D, Fu WY, Humphreys CJ and Moram MA (2013). Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides. Journal of Applied Physics, AIP Publishing vol. 114 (13) 04-10-2013
Zhu D, Wallis DJ and Humphreys CJ (2013). Prospects of III-nitride optoelectronics grown on Si. Reports on Progress in Physics, IOP Publishing vol. 76 (10) 01-10-2013
Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F and Humphreys CJ (2013). The effect of dislocations on the efficiency of InGaN/GaN solar cells. Solar Energy Materials and Solar Cells, Elsevier vol. 117, 279-284. 01-10-2013
Oliver RA, Massabuau FC-P, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ, Dawson P, Hopkins MA, Allsopp DWE and Humphreys CJ (2013). The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes. Applied Physics Letters, AIP Publishing vol. 103 (14) 30-09-2013
Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ, Yasuhara A, Okunishi E and Nellist PD (2013). The dissociation of the [a + c] dislocation in GaN. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 93 (28-30), 3925-3938. 30-09-2013
Trindade AJ, Massoubre D, Guilhabert B, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson’ MD (2013). Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes. 2013 IEEE Photonics Conference. 01-09-2013
Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A and Humphreys CJ (2013). Measuring the composition of AlGaN layers in GaN based structures grown on 150?mm Si substrates using (2?0?5) reciprocal space maps. Semiconductor Science and Technology, IOP Publishing vol. 28 (9) 21-08-2013
Oehler F, Vickers ME, Kappers MJ, Humphreys CJ and Oliver RA (2013). Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds. Japanese Journal of Applied Physics, IOP Publishing vol. 52 (8S) 22-07-2013
Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-L and Moram MA (2013). Mg Doping Affects Dislocation Core Structures in GaN. Physical Review Letters, American Physical Society (APS) vol. 111 (2) 09-07-2013
Meneghini M, Vaccari S, Garbujo A, Trivellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G and Zanoni E (2013). Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells. Japanese Journal of Applied Physics, IOP Publishing vol. 52 (8S) 31-05-2013
Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2013). Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells. Japanese Journal of Applied Physics, IOP Publishing vol. 52 (8S) 31-05-2013
Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2013). Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures. Japanese Journal of Applied Physics, IOP Publishing vol. 52 (8S) 31-05-2013
Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, McAleese C, Humphreys CJ and Martin RW (2013). Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates. Semiconductor Science and Technology, IOP Publishing vol. 28 (6) 16-05-2013
Meneghini M, Trivellin N, Berti M, Cesca T, Gasparotto A, Vinattieri A, Bogani F, Zhu D, Humphreys CJ, Meneghesso G and Zanoni E (2013). Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs. Gallium Nitride Materials and Devices VIII. 22-02-2013
Massabuau FC-P, Trinh-Xuan L, Lodié D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2013). Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells. Journal of Applied Physics, AIP Publishing vol. 113 (7) 15-02-2013
Jouvet N, Kappers MJ, Humphreys CJ and Oliver RA (2013). The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption. Journal of Applied Physics, AIP Publishing vol. 113 (6) 11-02-2013
Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ and Corbett B (2013). High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance. Applied Physics Express, IOP Publishing vol. 6 (2) 01-02-2013
Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2013). High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop. Applied Physics Letters, AIP Publishing vol. 102 (2) 14-01-2013
Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD (2013). Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. 2013 IEEE Photonics Conference. 01-01-2013
2012
Humphreys CJ (2012). The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law. Acta Crystallographica Section A: Foundations and advances, International Union of Crystallography (IUCr) vol. 69 (1), 45-50. 05-12-2012
Sahonta S, Kappers MJ, Zhu D, Puchtler TJ, Zhu T, Bennett SE, Humphreys CJ and Oliver RA (2012). Properties of trench defects in InGaN/GaN quantum well structures. physica status solidi (a) – applications and materials science, Wiley vol. 210 (1), 195-198. 21-11-2012
Massabuau FC-P, Sahonta S-L, Trinh-Xuan L, Rhode S, Puchtler TJ, Kappers MJ, Humphreys CJ and Oliver RA (2012). Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures. Applied Physics Letters, AIP Publishing vol. 101 (21) 19-11-2012
Elsherif OS, Vernon-Parry KD, Evans-Freeman JH, Airey RJ, Kappers M and Humphreys CJ (2012). Characterisation of defects in p-GaN by admittance spectroscopy. 01-08-2012
Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Oliver RA and Humphreys CJ (2012). Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells. Journal of Applied Physics, AIP Publishing vol. 112 (1) 01-07-2012
Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2012). The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures. Journal of Applied Physics, AIP Publishing vol. 111 (8) 15-04-2012
Meneghini M, Vaccari S, Trivellin N, Zhu D, Humphreys C, Butendheich R, Leirer C, Hahn B, Meneghesso G and Zanoni E (2012). Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 59 (5), 1416-1422. 08-03-2012
Bennett SE, Smeeton TM, Saxey DW, Smith GDW, Hooper SE, Heffernan J, Humphreys CJ and Oliver RA (2012). Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy. Journal of Applied Physics, AIP Publishing vol. 111 (5) 01-03-2012
Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P and Humphreys CJ (2012). Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire. physica status solidi (b), Wiley vol. 249 (3), 494-497. 16-02-2012
Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA and Humphreys CJ (2012). Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering. Journal of Applied Physics, AIP Publishing vol. 111 (4) 15-02-2012
Amari H, Kappers MJ, Humphreys CJ, Chèze C and Walther T (2012). Measurement of the Al content in AlGaN epitaxial layers by combined energy‐dispersive X‐ray and electron energy‐loss spectroscopy in a transmission electron microscope. physica status solidi (c), Wiley vol. 9 (3‐4), 1079-1082. 14-02-2012
Phillips WA, Thrush EJ, Zhang Y and Humphreys CJ (2012). Studies of efficiency droop in GaN based LEDs. 26-01-2012
Liu LZ, McAleese C, Rao DVS, Kappers MJ and Humphreys CJ (2012). Electron holography of an in‐situ biased GaN‐based LED. 26-01-2012
Kappers MJ, Badcock TJ, Hao R, Moram MA, Hammersley S, Dawson P and Humphreys CJ (2012). On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wells. 26-01-2012
Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2012). Structure and chemistry of the Si(111)/AlN interface. Applied Physics Letters, AIP Publishing vol. 100 (1) 02-01-2012
Humphreys C (2012). Low-cost high-efficiency GaN LEDs on 6-inch Si. Renewable Energy and the Environment Optics and Photonics Congress. 01-01-2012
Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ (2012). Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films, Elsevier vol. 520 (7), 3064-3070. 01-01-2012
2011
Badcock TJ, Kappers MJ, Moram MA, Dawson P and Humphreys CJ (2011). Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN. physica status solidi (b), Wiley vol. 249 (3), 498-502. 27-12-2011
Hao R, Kappers MJ, Moram MA and Humphreys CJ (2011). Defect reduction processes in heteroepitaxial non-polar a-plane GaN films. Journal of Crystal Growth, Elsevier vol. 337 (1), 81-86. 01-12-2011
Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ and Moram MA (2011). Growth, microstructure and morphology of epitaxial ScGaN films. physica status solidi (a) – applications and materials science, Wiley vol. 209 (1), 33-40. 24-11-2011
Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G, Couillard M, Botton GA, Sahonta S and Humphreys CJ (2011). High‐efficiency InGaN/GaN quantum well structures on large area silicon substrates. physica status solidi (a) – applications and materials science, Wiley vol. 209 (1), 13-16. 21-11-2011
Amari H, Lari L, Zhang HY, Geelhaar L, Chèze C, Kappers MJ, McAleese C, Humphreys CJ and Walther T (2011). Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope. 09-11-2011
Petrov M, Holec D, Lymperakis L, Neugebauer J and Humphreys CJ (2011). Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite AlN and AlxGa1−xN. 09-11-2011
Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]. Journal of Applied Physics, AIP Publishing vol. 110 (9) 01-11-2011
Zhang Y, Fu W-Y, Humphreys C and Lieten R (2011). Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate. Applied Physics Express, IOP Publishing vol. 4 (9) 26-08-2011
Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates. Japanese Journal of Applied Physics, IOP Publishing vol. 50 (8R) 01-08-2011
Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ (2011). The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r -Plane Sapphire Substrates. Japanese Journal of Applied Physics, IOP Publishing vol. 50 (8R) 01-08-2011
Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GD and Oliver RA (2011). Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells. Applied Physics Letters, AIP Publishing vol. 99 (2) 11-07-2011
Hammersley S, Badcock TJ, Watson‐Parris D, Godfrey MJ, Dawson P, Kappers MJ and Humphreys CJ (2011). Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure. 20-06-2011
Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ (2011). Properties of surface‐pit related emission in a ‐plane InGaN/GaN quantum wells grown on r ‐plane sapphire. 07-06-2011
Fu WY, Kappers MJ, Zhang Y, Humphreys CJ and Moram MA (2011). Dislocation Climb in c-Plane AlN Films. Applied Physics Express, IOP Publishing vol. 4 (6) 01-06-2011
Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ (2011). The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates. physica status solidi (a) – applications and materials science, Wiley vol. 208 (7), 1529-1531. 01-06-2011
Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH and Humphreys CJ (2011). Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys. Physical Review B, American Physical Society (APS) vol. 83 (16) 15-04-2011
Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ (2011). The effects of Si doping on dislocation movement and tensile stress in GaN films. Journal of Applied Physics, AIP Publishing vol. 109 (7) 01-04-2011
Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ and Humphreys CJ (2011). Carrier localization mechanisms in InxGa1-xN/GaN quantum wells. Physical Review B, American Physical Society (APS) vol. 83 (11) 15-03-2011
Zhu D and Humphreys CJ (2011). Lighting. Fundamentals of Materials for Energy and Environmental Sustainability 474-490. 01-01-2011
Chee AKW, Broom RF, Humphreys CJ and Bosch EGT (2011). A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations. Journal of Applied Physics, AIP Publishing vol. 109 (1) 01-01-2011
Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M, Hylton N, Dawson P and Humphreys C (2011). Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates. Journal of Applied Physics, AIP Publishing vol. 109 (1) 01-01-2011
2010
Moram MA, Sadler TC, Häberlen M, Kappers MJ and Humphreys CJ (2010). Dislocation movement in GaN films. Applied Physics Letters, AIP Publishing vol. 97 (26) 27-12-2010
Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2010). Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy. Applied Physics Letters, AIP Publishing vol. 97 (25) 20-12-2010
Chang TY, Moram MA, McAleese C, Kappers MJ and Humphreys CJ (2010). Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm. Journal of Applied Physics, AIP Publishing vol. 108 (12) 15-12-2010
Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA (2010). Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice. Ultramicroscopy, Elsevier vol. 111 (3), 207-211. 01-12-2010
Hao R, Zhu T, Häberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ and Moram MA (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth, Elsevier vol. 312 (23), 3536-3543. 01-11-2010
Schulz S, Badcock TJ, Moram MA, Dawson P, Kappers MJ, Humphreys CJ and O’Reilly EP (2010). Electronic and optical properties of nonpolar a-plane GaN quantum wells. Physical Review B, American Physical Society (APS) vol. 82 (12) 15-09-2010
Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A and Humphreys CJ (2010). Microstructural origins of localization in InGaN quantum wells. Journal of Physics D, IOP Publishing vol. 43 (35) 19-08-2010
Kurniawan O, Tan CC, Ong VKS, Li E and Humphreys CJ (2010). A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 57 (10), 2455-2461. 09-08-2010
Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics, AIP Publishing vol. 108 (3) 01-08-2010
Moram MA, Kappers MJ and Humphreys CJ (2010). Low dislocation density nonpolar (11‐20) GaN films achieved using scandium nitride interlayers. 01-07-2010
Rodenburg C, Jepson MAE, Inkson BJ, Bosch EGT and Humphreys CJ (2010). Energy filtered scanning electron microscopy: applications to characterisation of semiconductors. 01-07-2010
Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA (2010). Atom probe extended to AlGaN: three‐dimensional imaging of a Mg‐doped AlGaN/GaN superlattice. 01-07-2010
Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M and Humphreys C (2010). InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength. 01-07-2010
Watson‐Parris D, Godfrey MJ, Oliver RA, Dawson P, Galtrey MJ, Kappers MJ and Humphreys CJ (2010). Energy landscape and carrier wave‐functions in InGaN/GaN quantum wells. 01-07-2010
Collins DP, Holmes MJ, Taylor RA, Oliver RA, Kappers MJ and Humphreys CJ (2010). Q‐factor measurements on planar nitride cavities. 01-07-2010
Badcock TJ, Häberlen M, Kappers MJ, Moram MA, Dawson P, Humphreys CJ and Oliver RA (2010). Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a ‐plane GaN. 01-07-2010
Badcock TJ, Hammersley S, Kappers MJ, Humphreys CJ and Dawson P (2010). Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults. 01-07-2010
Badcock TJ, Schulz S, Moram MA, Kappers MJ, Dawson P, O'Reilly EP and Humphreys CJ (2010). Characterising the degree of polarisation anisotropy in an a ‐plane GaN film. 01-07-2010
Humphreys C, Oliver R, Kappers M, Bennett , Parris D, Dawson P, Godfrey M, Clifton P, Larson D, Ulfig R, Saxey D and Cerezo A (2010). Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 16 (S2), 1890-1891. 01-07-2010
Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ and Humphreys CJ (2010). Dislocation reduction in GaN grown on Si(111) using a strain‐driven 3D GaN interlayer. 08-06-2010
Bennett SE, Holec D, Kappers MJ, Humphreys CJ and Oliver RA (2010). Imaging dislocations in gallium nitride across broad areas using atomic force microscopy. Review of Scientific Instruments, AIP Publishing vol. 81 (6) 01-06-2010
Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M and Spence JCH (2010). Combined structure‐factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN. Acta Crystallographica Section A: Foundations and advances, International Union of Crystallography (IUCr) vol. 66 (4), 446-450. 07-05-2010
Chee KWA, Bosch EGT and Humphreys CJ (2010). Progress towards quantitative dopant profiling in the SEM. 01-02-2010
Rao DVS, Beanland R, Kappers MJ, Zhu D and Humphreys CJ (2010). Lattice distortions in GaN thin films on (0001) sapphire. 01-02-2010
Haeberlen M, Zhu D, McAleese C, Kappers MJ and Humphreys CJ (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers. 01-02-2010
Oliver RA, Bennett SE, Sumner J, Kappers MJ and Humphreys CJ (2010). Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth. 01-02-2010
Chee KWA, Beanland R, Midgley PA and Humphreys CJ (2010). Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system. 01-02-2010
Barnard JS, Bennett SE, Oliver RA, Kappers MJ and Humphreys CJ (2010). The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials. 01-02-2010
Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA (2010). Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS. 01-02-2010
Jepson MAE, Inkson BJ, Beanland R, Chee AKW, Humphreys CJ and Rodenburg C (2010). Progress towards site-specific dopant profiling in the scanning electron microscope. 01-02-2010
Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ and Hageman PR (2010). Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment. Journal of Crystal Growth, Elsevier vol. 312 (4), 595-600. 01-02-2010
Rodenburg C, Jepson MAE, Inkson BJ, Bosch E, Chee AKW and Humphreys CJ (2010). Energy filtered scanning electron microscopy: Applications to dopant contrast. 01-02-2010
Liu LZ-Y, Rao DVS, Kappers MJ, Humphreys CJ and Geiger D (2010). Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography. 01-02-2010
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2010). Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy. Journal of Physics D, IOP Publishing vol. 43 (5) 21-01-2010
Kappers MJ, Moram MA, Rao DVS, McAleese C and Humphreys CJ (2010). Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire. Journal of Crystal Growth, Elsevier vol. 312 (3), 363-367. 01-01-2010
2009
Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ and Humphreys CJ (2009). Cavity Enhancement of Single Quantum Dot Emission in the Blue. Discover Nano, Springer Nature vol. 5 (3) 27-12-2009
Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ and Humphreys CJ (2009). Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy. Journal of Applied Physics, AIP Publishing vol. 106 (11) 01-12-2009
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2009). Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN. Journal of Applied Physics, AIP Publishing vol. 106 (10) 15-11-2009
Moram MA, Oliver RA, Kappers MJ and Humphreys CJ (2009). The Spatial Distribution of Threading Dislocations in Gallium Nitride Films. Advanced Materials, Wiley vol. 21 (38‐39), 3941-3944. 16-10-2009
Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ and Corbett B (2009). Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes. Applied Physics Letters, AIP Publishing vol. 95 (15) 12-10-2009
Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ and Humphreys CJ (2009). On the origin of threading dislocations in GaN films. Journal of Applied Physics, AIP Publishing vol. 106 (7) 01-10-2009
Oliver RA, Sumner J, Kappers MJ and Humphreys CJ (2009). Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images. Journal of Applied Physics, AIP Publishing vol. 106 (5) 01-09-2009
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction. Physica B Condensed Matter, Elsevier vol. 404 (16), 2189-2191. 01-08-2009
Bennett , Oliver R, Saxey D, Cerezo A, Clifton P, Ulfig R, Kappers M and Humphreys C (2009). Atom Probe Tomography Studies of GaN-Based Semiconductor Materials. 01-07-2009
Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA, Humphreys CJ, Vierheilig C and Schwarz UT (2009). Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, AIP Publishing vol. 106 (1) 01-07-2009
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films. Journal of Physics D, IOP Publishing vol. 42 (13) 16-06-2009
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2009). Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates. Journal of Applied Physics, AIP Publishing vol. 105 (12) 15-06-2009
Rao DVS, McLaughlin K, Kappers MJ and Humphreys CJ (2009). Lattice distortions in GaN on sapphire using the CBED–HOLZ technique. Ultramicroscopy, Elsevier vol. 109 (10), 1250-1255. 12-06-2009
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ (2009). Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers. Journal of Crystal Growth, Elsevier vol. 311 (12), 3239-3242. 01-06-2009
Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ (2009). Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire. Journal of Crystal Growth, Elsevier vol. 311 (12), 3295-3299. 01-06-2009
Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ (2009). Defect reduction in non‐polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire. 01-06-2009
Moram MA, Johnston CF, Hollander JL, Kappers MJ and Humphreys CJ (2009). Understanding x-ray diffraction of nonpolar gallium nitride films. Journal of Applied Physics, AIP Publishing vol. 105 (11) 01-06-2009
Tan WS, Kauer M, Hooper SE, Smeeton TM, Bousquet V, Rossetti M, Heffernan J, Xiu H and Humphreys CJ (2009). Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy. 01-06-2009
Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C and Tahraoui A (2009). Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot. Nanotechnology, IOP Publishing vol. 20 (24) 27-05-2009
Hylton NP, Dawson P, Johnston CF, Kappers MJ, Hollander JL, McAleese C and Humphreys CJ (2009). Optical and microstructural properties of semi‐polar (11‐22) InGaN/GaN quantum well structures. 26-05-2009
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2009). Optical polarisation anisotropy in a ‐plane GaN/AlGaN multiple quantum well structures. 26-05-2009
Johnston CF, Moram MA, Kappers MJ and Humphreys CJ (2009). Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers. Applied Physics Letters, AIP Publishing vol. 94 (16) 20-04-2009
Johnston CF, Kappers MJ and Humphreys CJ (2009). Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method. Journal of Applied Physics, AIP Publishing vol. 105 (7) 01-04-2009
Collins DP, Jarjour AF, Taylor RA, Hadjipanayi M, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2009). Non‐linear excitation and correlation studies of single InGaN quantum dots. 01-04-2009
Holec D, Rao DVS and Humphreys CJ (2009). HANSIS software tool for the automated analysis of HOLZ lines. Ultramicroscopy, Elsevier vol. 109 (7), 837-844. 24-03-2009
Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ and Campion RP (2009). Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, Elsevier vol. 311 (7), 2054-2057. 01-03-2009
Zhu D, McAleese C, McLaughlin KK, Häberlen M, Salcianu CO, Thrush EJ, Kappers MJ, Phillips WA, Lane P, Wallis DJ, Martin T, Astles M, Thomas S, Pakes A, Heuken M and Humphreys CJ (2009). GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII. 03-02-2009
Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA and Humphreys CJ (2009). Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices. Applied Physics Letters, AIP Publishing vol. 94 (1) 05-01-2009
2008
Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C and Humphreys CJ (2008). Equilibrium critical thickness for misfit dislocations in III-nitrides. Journal of Applied Physics, AIP Publishing vol. 104 (12) 15-12-2008
Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2008). Electrically driven single InGaN/GaN quantum dot emission. Applied Physics Letters, AIP Publishing vol. 93 (23) 08-12-2008
Holec D, Costa PMFJ, Cherns PD and Humphreys CJ (2008). A theoretical study of ELNES spectra of AlxGa1-xN using Wien2k and Telnes programs. 01-11-2008
Kappers MJ, Hollander JL, Johnston CF, McAleese C, Rao DVS, Sanchez AM, Humphreys CJ, Badcock TJ and Dawson P (2008). Properties of non-polar a-plane GaN/AlGaN quantum wells. 01-11-2008
Moram MA, Barber ZH and Humphreys CJ (2008). The effect of oxygen incorporation in sputtered scandium nitride films. Thin Solid Films, Elsevier vol. 516 (23), 8569-8572. 01-10-2008
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ (2008). Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates. Applied Physics Letters, AIP Publishing vol. 93 (10) 08-09-2008
Johnston CF, Kappers MJ, Barnard JS and Humphreys CJ (2008). Characterisation of non-polar (11-20) gallium nitride using TEM techniques. 01-08-2008
Chee KWA, Rodenburg C and Humphreys CJ (2008). High resolution dopant profiling in the SEM, image widths and surface band-bending. 01-08-2008
Oliver RA, Van der Laak NK, Kappers MJ and Humphreys CJ (2008). Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose. Journal of Crystal Growth, Elsevier vol. 310 (15), 3459-3465. 01-07-2008
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW and Cerezo A (2008). Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures. Journal of Applied Physics, AIP Publishing vol. 104 (1) 01-07-2008
Emiroglu D, Evans-Freeman J, Kappers MJ, McAleese C and Humphreys CJ (2008). High Resolution Laplace Deep Level Transient Spectroscopy Studies of Shallow and Deep Levels in n-GaN. 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. 01-07-2008
Oliver RA, Galtrey MJ and Humphreys CJ (2008). High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems. Materials Science and Technology, SAGE Publications vol. 24 (6), 675-681. 01-06-2008
Moram MA, Vickers ME, Kappers MJ and Humphreys CJ (2008). The effect of wafer curvature on x-ray rocking curves from gallium nitride films. Journal of Applied Physics, AIP Publishing vol. 103 (9) 01-05-2008
Johnston CF, Kappers MJ, Barnard JS and Humphreys CJ (2008). Morphological study of non‐polar (11‐20) GaN grown on r‐plane (1‐102) sapphire. 01-05-2008
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2008). Assessment of scanning spreading resistance microscopy for application to n‐type GaN. 01-05-2008
Salcianu CO, Thrush EJ, Plumb RG, Boyd AR, Rockenfeller O, Schmitz D, Heuken M and Humphreys CJ (2008). Palladium‐based on‐wafer electroluminescence studies of GaN‐based LED structures. 01-05-2008
Oliver RA, Kappers MJ and Humphreys CJ (2008). Gross well‐width fluctuations in InGaN quantum wells. 01-05-2008
Moram MA, Kappers MJ, Zhang Y, Barber ZH and Humphreys CJ (2008). Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers. 01-05-2008
Xiu H, Thrush EJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ (2008). Degradation of III‐nitride laser diodes grown by molecular beam epitaxy. 01-05-2008
Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote S and Borghs G (2008). Structural features in GaN grown on a Ge(111) substrate. 01-05-2008
Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT and Humphreys CJ (2008). Growth of epitaxial thin films of scandium nitride on 100-oriented silicon. Journal of Crystal Growth, Elsevier vol. 310 (11), 2746-2750. 01-05-2008
Corbett B, Zhu D, Roycroft B, Maaskant P, Akhter M, McAleese C, Kappers MJ and Humphreys CJ (2008). High brightness near‐ultraviolet resonant LEDs. 01-05-2008
Datta R, McAleese C, Cherns P, Rayment FDG and Humphreys CJ (2008). Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer. 01-05-2008
Emiroglu D, Evans‐Freeman J, Kappers MJ, McAleese C and Humphreys CJ (2008). High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n‐type GaN. 01-05-2008
Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Taylor RA and Humphreys CJ (2008). Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field. 01-05-2008
Dawson P, Hylton NP, Kappers MJ, McAleese C and Humphreys CJ (2008). Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells. 01-05-2008
Sumner J, Bakshi SD, Oliver RA, Kappers MJ and Humphreys CJ (2008). Unintentional doping in GaN assessed by scanning capacitance microscopy. 28-04-2008
Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larsen D and Cerezo A (2008). Atom probe reveals the structure of Inx Ga1–x N based quantum wells in three dimensions. 28-04-2008
Rossetti M, Smeeton TM, Tan W-S, Kauer M, Hooper SE, Heffernan J, Xiu H and Humphreys CJ (2008). Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings. Applied Physics Letters, AIP Publishing vol. 92 (15) 14-04-2008
Humphreys CJ (2008). Solid-State Lighting. MRS Bulletin, Springer Nature vol. 33 (4), 459-470. 01-04-2008
Hollander JL, Kappers MJ, McAleese C and Humphreys CJ (2008). Improvements in a-plane GaN crystal quality by a two-step growth process. Applied Physics Letters, AIP Publishing vol. 92 (10) 10-03-2008
Oliver RA, Kappers MJ, McAleese C, Datta R, Sumner J and Humphreys CJ (2008). The origin and reduction of dislocations in Gallium Nitride. 05-03-2008
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2008). Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 26 (2), 611-617. 01-03-2008
de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008). Advanced Materials, Wiley vol. 20 (5) 29-02-2008
de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ (2008). Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures. Advanced Materials, Wiley vol. 20 (5), 1038-1043. 08-02-2008
Oliver RA, Jarjour AF, Taylor RA, Tahraoui A, Zhang Y, Kappers MJ and Humphreys CJ (2008). Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source. 01-02-2008
Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D and Cerezo A (2008). Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe. Applied Physics Letters, AIP Publishing vol. 92 (4) 28-01-2008
Zhao LX, Thrush EJ, Humphreys CJ and Phillips WA (2008). Degradation of GaN-based quantum well light-emitting diodes. Journal of Applied Physics, AIP Publishing vol. 103 (2) 15-01-2008
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2008). Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN. 01-01-2008
Cherns PD, McAleese C, Kappers MJ and Humphreys CJ (2008). Strain Relaxation in an AlGaN/GaN Quantum Well System. 01-01-2008
Chee KWA, Rodenburg C and Humphreys CJ (2008). Quantitative Dopant Profiling in the SEM Including Surface States. 01-01-2008
Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote S and Borghs G (2008). An Initial Exploration of GaN Grown on a Ge-(111) Substrate. 01-01-2008
Humphreys CJ, Galtrey MJ, Laak NVD, Oliver RA, Kappers MJ, Barnard JS, Graham DM and Dawson P (2008). The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key. 01-01-2008
Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y and Humphreys CJ (2008). The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3. Applied Surface Science, Elsevier vol. 254 (7), 2124-2130. 01-01-2008
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A (2008). Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well Structures. 01-01-2008
Moldovan* G, Ong VKS, Kurniawan O, Kazemian P, Edwards PR and Humphreys C (2008). EBIC Characterisation of Diffusion and Recombination of Minority Carriers in GaN-Based LEDs. 01-01-2008
Humphreys CJ, Galtrey MJ, Oliver RA, Kappers MJ, Zhu D, McAleese C, van der Laak NK, Graham DM, Dawson P, Cerezo A and Clifton PH (2008). The atomic structure of GaN-based quantum wells and interfaces. EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany 41-42. 01-01-2008
2007
Holec D and Humphreys CJ (2007). Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems. 06-12-2007
Hollander JL, Kappers MJ and Humphreys CJ (2007). Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientations. 01-12-2007
Kappers MJ, Moram MA, Zhang Y, Vickers ME, Barber ZH and Humphreys CJ (2007). Interlayer methods for reducing the dislocation density in gallium nitride. 01-12-2007
Cerezo A, Clifton PH, Galtrey MJ, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA, Oliver RA, Sha G, Thompson K, Zandbergen M and Alvis RL (2007). Atom probe tomography today. Materials Today, Elsevier vol. 10 (12), 36-42. 01-12-2007
Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C and Humphreys CJ (2007). Deep electronic states associated with a metastable hole trap in n-type GaN. Physica B Condensed Matter, Elsevier vol. 401, 311-314. 01-12-2007
Withnall R, Silver J, Ireland TG, Lipman AL, Fern GR, McAleese C, Humphreys C and Phillips WA (2007). Advantages and disadvantages of using YAG: Ce nanophosphors encapsulated on blue-emitting LED chips as backlights for displays. 01-12-2007
Humphreys CJ (2007). Chapter 42. Turning Points in Solid-State, Materials and Surface Science 698-710. 30-11-2007
Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Humphreys CJ and Taylor RA (2007). Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot. Physical Review Letters, American Physical Society (APS) vol. 99 (19) 09-11-2007
Hylton NP, Dawson P, Kappers MJ, McAleese C and Humphreys CJ (2007). Excitation energy dependence of the photoluminescence spectrum of an InxGa1−xN∕GaN single quantum well structure. Physical Review B, American Physical Society (APS) vol. 76 (20) 05-11-2007
Jiang N, Qiu J, Humphreys CJ and Spence JCH (2007). Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure. Micron, Elsevier vol. 39 (6), 698-702. 22-10-2007
Holec D, Costa PMFJ, Cherns PD and Humphreys CJ (2007). Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs. Micron, Elsevier vol. 39 (6), 690-697. 22-10-2007
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A and Smith GDW (2007). Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]. Applied Physics Letters, AIP Publishing vol. 91 (17) 22-10-2007
Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer. Journal of Crystal Growth vol. 308 (2), 302-308. 15-10-2007
Moram MA, Zhang Y, Kappers MJ, Barber ZH and Humphreys CJ (2007). Dislocation reduction in gallium nitride films using scandium nitride interlayers. Applied Physics Letters, AIP Publishing vol. 91 (15) 08-10-2007
Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2007). Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer. Journal of Crystal Growth, Elsevier vol. 308 (2), 302-308. 01-10-2007
Zhu D, Corbett B, Roycroft B, Maaskant P, McAleese C, Akhter M, Kappers MJ and Humphreys CJ (2007). Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications. Manufacturing LEDs for Lighting and Displays. 25-09-2007
Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote B and Borghs G (2007). Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy. Applied Physics Letters, AIP Publishing vol. 91 (9) 27-08-2007
Cerezo A, Chang L, Clifton P, Galtrey M, Gerstl S, Humphreys C, Mueller M, Oliver R, Smith G and Wu Y (2007). 3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 13 (S02), 1608-1609. 01-08-2007
Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A (2007). Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot. Applied Physics Letters, AIP Publishing vol. 91 (5) 30-07-2007
Moram MA, Barber ZH and Humphreys CJ (2007). Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction. Journal of Applied Physics, AIP Publishing vol. 102 (2) 15-07-2007
van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Characterization of InGaN quantum wells with gross fluctuations in width. Journal of Applied Physics, AIP Publishing vol. 102 (1) 01-07-2007
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ (2007). Practical issues in carrier‐contrast imaging of GaN structures. 01-06-2007
Holec D, Costa PMFJ, Kappers MJ and Humphreys CJ (2007). Critical thickness calculations for InGaN/GaN. 01-05-2007
Humphreys CJ (2007). Does In form In-rich clusters in InGaN quantum wells? The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 87 (13), 1971-1982. 01-05-2007
Galtrey M, Oliver R and Humphreys C (2007). Atom probe provides evidence to question InGaN cluster theory. Compound Semiconductor vol. 13 (4), 27-30. 01-05-2007
Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ (2007). Resonant Photoluminescence Spectroscopy of InGaN/GaN Single Quantum Well Structures. AIP Conference Proceedings. 10-04-2007
Rigopoulos N, Hamilton B, Davies GJ, Towlson BM, Poolton NRJ, Dawson P, Graham DM, Kappers MJ, Humphreys CJ and Carlson S (2007). Optically Detected Extended X‐Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum Wells. AIP Conference Proceedings. 10-04-2007
Jarjour AF, Taylor RA, Martin RW, Watson IM, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ (2007). Optical Studies of Non‐linear Absorption in Single InGaN/GaN Quantum Dots. AIP Conference Proceedings. 10-04-2007
Graham DM, Dawson P, Zhu D, Kappers MJ, McAleese C, Hylton NP, Chabrol GR and Humphreys CJ (2007). High Photoluminescence Efficiency III‐Nitride Based Quantum Well Structures Emitting at 380 nm. AIP Conference Proceedings. 10-04-2007
Oliver RA, Jarjour AF, Tahraoui A, Kappers MJ, Taylor RA and Humphreys CJ (2007). Materials challenges for devices based on single, self-assembled InGaN quantum dots. 01-04-2007
van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2007). Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures. Applied Physics Letters, AIP Publishing vol. 90 (12) 19-03-2007
Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B, Oliver RA, Humphreys CJ, Noakes TCQ and Bailey P (2007). Anisotropic strain relaxation in a-plane GaN quantum dots. Journal of Applied Physics, AIP Publishing vol. 101 (6) 15-03-2007
Kappers MJ, Hollander JL, McAleese C, Johnston CF, Broom RF, Barnard JS, Vickers ME and Humphreys CJ (2007). Growth and characterisation of semi-polar (1l2¯2) InGaN/GaN MQW structures. 01-03-2007
Kappers MJ, Datta R, Oliver RA, Rayment FDG, Vickers ME and Humphreys CJ (2007). Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers. 01-03-2007
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A (2007). Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering. Applied Physics Letters, AIP Publishing vol. 90 (6) 05-02-2007
Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ and Humphreys CJ (2007). Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy. Applied Surface Science, Elsevier vol. 253 (8), 3937-3944. 01-02-2007
Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C and Humphreys CJ (2007). High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm. Journal of Applied Physics, AIP Publishing vol. 101 (3) 01-02-2007
Moram MA, Kappers MJ, Barber ZH and Humphreys CJ (2007). Growth of low dislocation density GaN using transition metal nitride masking layers. 01-01-2007
Zhu D, Kappers MJ, McAleese C, Graham DM, Chabrol GR, Hylton NP, Dawson P, Thrush EJ and Humphreys CJ (2007). Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures. 01-01-2007
Graham DM, Dawson P, Zhu D, Kappers MJ, McAleese C, Hylton NP, Chabro GR and Humphreys CJ (2007). High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm. 01-01-2007
Chee AKW, Rodenburg C and Humphreys CJ (2007). The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions. MRS Advances, Springer Nature vol. 1026 01-01-2007
2006
Huixin X, Costa PMFJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ (2006). Study of defects in p-type layers in III-nitride laser diode structures grown by molecular beam epitaxy. 01-12-2006
Ong VKS, Kurniawan O, Moldovan G and Humphreys CJ (2006). A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions. Journal of Applied Physics, AIP Publishing vol. 100 (11) 01-12-2006
Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ (2006). Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures. Applied Physics Letters, AIP Publishing vol. 89 (21) 20-11-2006
Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O and Humphreys CJ (2006). Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices. Ultramicroscopy, Elsevier vol. 107 (4-5), 382-389. 07-11-2006
Spence⊥ JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM and Justo JF (2006). Imaging dislocation cores – the way forward. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (29-31), 4781-4796. 11-10-2006
Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2006). Microstructure of epitaxial scandium nitride films grown on silicon. Applied Surface Science, Elsevier vol. 252 (24), 8385-8387. 01-10-2006
Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging. Journal of Applied Physics, AIP Publishing vol. 100 (5) 01-09-2006
Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ (2006). Quantitative secondary electron energy filtering in a scanning electron microscope and its applications. Ultramicroscopy, Elsevier vol. 107 (2-3), 140-150. 26-07-2006
Moram MA, Barber ZH, Humphreys CJ, Joyce TB and Chalker PR (2006). Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon. Journal of Applied Physics, AIP Publishing vol. 100 (2) 15-07-2006
Oliver RA, Kappers MJ and Humphreys CJ (2006). Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy. Applied Physics Letters, AIP Publishing vol. 89 (1) 03-07-2006
Datta R and Humphreys CJ (2006). Mechanisms of bending of threading dislocations in MOVPE‐grown GaN on (0001) sapphire. 01-06-2006
Oliver RA, Kappers MJ, van der Laak NK and Humphreys CJ (2006). Three methods for the growth of InGaN nanostructures by MOVPE. 01-06-2006
van der Laak NK, Oliver RA, Barnard JS, Cherns PD, Kappers MJ and Humphreys CJ (2006). Towards a better understanding of nano‐islands formed during atmospheric pressure MOVPE. 01-06-2006
Moldovan G, Phillips A, Thrush EJ and Humphreys CJ (2006). Temperature current‐voltage characterisation of MOCVD grown InGaN/GaN MQW LEDs. 01-06-2006
von Pezold J, Oliver RA, Kappers MJ, Bristowe PD and Humphreys CJ (2006). The effect of Si on the growth mode of GaN. 01-06-2006
Graham DM, Dawson P, Zhang Y, Costa PMFJ, Kappers MJ, Humphreys CJ and Thrush EJ (2006). The effect of a Mg‐doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures. 01-06-2006
Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Barnard JS, Humphreys CJ and Thrush EJ (2006). Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells. 01-06-2006
Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Costa PMFJ, Vickers ME, Datta R, Humphreys CJ and Thrush EJ (2006). High quantum efficiency InGaN/GaN structures emitting at 540 nm. 01-06-2006
McAleese C, Costa PMFJ, Graham DM, Xiu H, Barnard JS, Kappers MJ, Dawson P, Godfrey MJ and Humphreys CJ (2006). Electric fields in AlGaN/GaN quantum well structures. 01-06-2006
Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ and Brown PD (2006). Effects of KOH etching on the properties of Ga-polar n-GaN surfaces. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (16), 2315-2327. 01-06-2006
Kazemian P, Twitchett AC, Humphreys CJ and Rodenburg C (2006). Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens. Applied Physics Letters, AIP Publishing vol. 88 (21) 22-05-2006
Cherns PD, McAleese C, Barnard JS, Kappers MJ and Humphreys CJ (2006). A TEM investigation of crack reduction in AlGaN/GaN heterostructures using an AlN interlayer. 15-05-2006
Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2006). Microstructure and strain-free lattice parameters of Sc15-05-2006
Van Der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2006). Quantum well network structures: Investigating long-range thickness fluctuations in single InGaN/GaN quantum wells. 15-05-2006
Wong ASW, Ho GW, Dunin-Borkowski R, Kasama T, Oliver RA, Costa PMFJ and Humphreys CJ (2006). The mean inner potential of GaN measured from nanowires using off-axis electron holography. 15-05-2006
Costa PMFJ, Datta R, Kappers MJ, Vickers ME and Humphreys CJ (2006). Misfit dislocations in green-emitting InGaN/GaN quantum well structures. 15-05-2006
Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). SiH15-05-2006
Charles MB, Zhang Y, Kappers MJ and Humphreys CJ (2006). Progress in MOVPE growth of crack‐free AlGaN based Bragg reflectors on Si(111). 01-05-2006
Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P, Thrush EJ, Mullins JT and Humphreys CJ (2006). A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers. physica status solidi (a) – applications and materials science, Wiley vol. 203 (7), 1819-1823. 01-05-2006
Kenyon AJ, Chryssou CE, Smeeton TM, Humphreys CJ and Hole DE (2006). Sensitisation of erbium luminescence in erbium-implanted alumina. 01-05-2006
Costa PMFJ, Datta R, Kappers MJ, Vickers ME, Humphreys CJ, Graham DM, Dawson P, Godfrey MJ, Thrush EJ and Mullins JT (2006). Misfit dislocations in In‐rich InGaN/GaN quantum well structures. 01-05-2006
Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Martin RW and Watson IM (2006). Two-photon absorption from single InGaN/GaN quantum dots. Physica E Low-dimensional Systems and Nanostructures, Elsevier vol. 32 (1-2), 119-122. 01-05-2006
Smeeton TM, Humphreys CJ, Barnard JS and Kappers MJ (2006). The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy. 17-04-2006
Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3. Journal of Crystal Growth, Elsevier vol. 289 (2), 506-514. 01-04-2006
Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2006). SiH4 exposure of GaN surfaces:: A useful tool for highlighting dislocations. 01-01-2006
Hollander J, McAleese C, Kappers M and Humphreys C (2006). Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayers. 01-01-2006
Smeeton T and Humphreys C (2006). Perspectives on Electronic and Optoelectronic Materials. Springer Handbook of Electronic and Photonic Materials 3-15. 01-01-2006
Xiu H, Costa PM, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ (2006). Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy. MRS Advances, Springer Nature vol. 955 01-01-2006
2005
van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ (2005). Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wells. MRS Advances, Springer Nature vol. 892 (1) 01-12-2005
Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ (2005). Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films. MRS Advances, Springer Nature vol. 892 (1) 01-12-2005
Cherns PD, McAleese C, Barnard JS, Kappers MJ and Humphreys CJ (2005). A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer. MRS Advances, Springer Nature vol. 892 (1) 01-12-2005
Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ and Humphreys CJ (2005). Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells. Journal of Applied Physics, AIP Publishing vol. 98 (5) 01-09-2005
Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2005). Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by MOVPE. 25-08-2005
Charles MB, Kappers MJ and Humphreys CJ (2005). Growth of uncracked Al25-08-2005
Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2005). Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field. Applied Physics Letters, AIP Publishing vol. 86 (21) 16-05-2005
Vickers ME, Kappers MJ, Datta R, McAleese C, Smeeton TM, Rayment FDG and Humphreys CJ (2005). In-plane imperfections in GaN studied by x-ray diffraction. 06-05-2005
Humphreys C (2005). Science and the Miracles of Exodus. Europhysics news, EDP Sciences vol. 36 (3), 93-96. 01-05-2005
Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ and Thrush EJ (2005). Optical and microstructural studies of InGaN∕GaN single-quantum-well structures. Journal of Applied Physics, AIP Publishing vol. 97 (10) 29-04-2005
Taylor RA, Robinson JW, Rice JH, Lee KH, Jarjour A, Na JH, Yasin S, Oliver RA, Kappers MJ, Humphreys CJ, Briggs GAD, Williams DP, O'Reilly EP, Andreev AD and Arakawa Y (2005). Time-resolved dynamics in single InGaN quantum dots (Invited Paper). Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX. 13-04-2005
Charles MB, Kappers MJ and Humphreys CJ (2005). The effect of AlGaN and SiN interlayers on GaN/Si(111). 01-02-2005
Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2005). Reduction of threading dislocation density using in-situ SiNx interlayers. 01-01-2005
Oliver RA, van der Laak NK, Kappers MJ and Humphreys CJ (2005). Evolution of InGaN/GaN nanostructures and wetting layers during annealing. 01-01-2005
Barnard JS, Graham DM, Smeeton TM, Kappers MJ, Dawson P, Godfrey M and Humphreys CJ (2005). InGaN-GaN quantum wells: their luminescent and nano-structural properties. 01-01-2005
Wong ASW, Ho GW, Costa PMFJ, Oliver RA and Humphreys CJ (2005). Self-catalytic growth of gallium nitride nanoneedles under Garich conditions. 01-01-2005
Cherns PD, McAleese C, Kappers MJ and Humphreys CJ (2005). A TEM Study of A1N Interlayer Defects in AlGaN/GaN Heterostructures. 01-01-2005
van der Laak NK, Oliver RA, Kappers MJ, McAleese C and Humphreys CJ (2005). Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes. 01-01-2005
Ofori AP, Rossouw CJ and Humphreys CJ (2005). Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI. Acta Materialia, Elsevier vol. 53 (1), 97-110. 01-01-2005
Lee KH, Robinson WJ, Rice HJ, Na JH, Taylor AR, Oliver RA, Kappers MJ and Humphreys CJ (2005). Simulation of the Quantum-Confined Stark Effect in a Single InGaN Quantum Dot. NUSOD '05. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices, 2005.. 01-01-2005
Costa P, Datta R, Kappers M, Vickers M and Humphreys C (2005). Misfit dislocations in green-emitting InGaN/GaN quantum well structures. MRS Advances, Springer Nature vol. 892 (1) 01-01-2005
Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ (2005). SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations. MRS Advances, Springer Nature vol. 892 (1) 01-01-2005
Wong ASW, Ho GW, Dunin-Borkowski R, Kasama T, Oliver RA, Costa PMFJ and Humphreys CJ (2005). The mean inner potential of GaN measured from nanowires using off-axis electron holography. MRS Advances, Springer Nature vol. 892 (1) 01-01-2005
2004
Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2004). Growth modes in heteroepitaxy of InGaN on GaN. Journal of Applied Physics, AIP Publishing vol. 97 (1) 16-12-2004
McAleese C, Kappers MJ, Rayment FDG, Cherns P and Humphreys CJ (2004). Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN. 01-12-2004
Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD (2004). The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy. 01-12-2004
Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ and Hole DE (2004). Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina. Applied Physics Letters, AIP Publishing vol. 85 (22), 5200-5202. 29-11-2004
Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image. Applied Physics Letters, AIP Publishing vol. 85 (16), 3411-3413. 18-10-2004
Datta R, Kappers MJ, Vickers ME, Barnard JS and Humphreys CJ (2004). Growth and characterisation of GaN with reduced dislocation density. 01-10-2004
Yan J, Kappers MJ, Crossley A, McAleese C, Phillips WA and Humphreys CJ (2004). Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN. 10-09-2004
Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Yasin S and Humphreys CJ (2004). Photoluminescence Studies of Exciton Recombination and Dephasing in Single Ingan Quantum Dots. IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers (IEEE) vol. 3 (3), 343-347. 01-09-2004
Yan J, Kappers MJ, Barber ZH and Humphreys CJ (2004). Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN. 01-07-2004
KAZEMIAN P (2004). Effect of experimental parameters on doping contrast of Si p?n junctions in a FEG-SEM. 01-06-2004
Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ (2004). Temporal variation in photoluminescence from single InGaN quantum dots. Applied Physics Letters, AIP Publishing vol. 84 (20), 4110-4112. 17-05-2004
Humphreys C (2004). Can a Materials Scientist Move Mount Sinai? MRS Bulletin, Springer Nature vol. 29 (4), 222-223. 01-04-2004
Moldovan G, Harrison I, Humphreys CJ, Kappers M and Brown PD (2004). Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts. Materials Science and Technology, SAGE Publications vol. 20 (4), 533-538. 01-04-2004
Kaestner B, Schönjahn C and Humphreys CJ (2004). Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope. Applied Physics Letters, AIP Publishing vol. 84 (12), 2109-2111. 22-03-2004
Taylor RA, Robinson JW, Rice JH, Jarjour A, Smith JD, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ and Arakawa Y (2004). Dynamics of single InGaN quantum dots. 01-03-2004
Belyaev AE, Makarovsky O, Walker DJ, Eaves L, Foxon CT, Novikov SV, Zhao LX, Dykeman RI, Danylyuk SV, Vitusevich SA, Kappers MJ, Barnard JS and Humphreys CJ (2004). Resonance and current instabilities in AlN/GaN resonant tunnelling diodes. 01-03-2004
Rice JH, Oliver RA, Robinson JW, Smith JD, Taylor RA, Briggs GAD, Kappers MJ, Humphreys CJ and Yasin S (2004). InGaN quantum dots grown by MOVPE via a droplet epitaxy route. 01-03-2004
Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S and Arakawa Y (2004). Time‐integrated and time‐resolved photoluminescence studies of InGaN quantum dots. 01-02-2004
Campbell LC, Wilkinson MJ, Manz A, Camilleri P and Humphreys CJ (2004). Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries. Lab on a Chip, Royal Society of Chemistry (RSC) vol. 4 (3), 225-229. 01-01-2004
Ofori AP, Humpherys CJ, Tin S and Jones CN (2004). A TEM Study of the Effect of Platinum Group Metals in Advanced Single Crystal Nickel-Base Superalloys. Superalloys 2004 (Tenth International Symposium). 01-01-2004
Hobbs RA, Tin S, Rae CMF, Broomfield RW and Humphreys CJ (2004). Solidification Characteristics of Advanced Nickel-Base Single Crystal Superalloys. Superalloys 2004 (Tenth International Symposium). 01-01-2004
Chen GS, Chen G-S, Hsiao HH, Louh RF and Humphreys CJ (2004). Improving Thermal Stability of LiMn2 O 4 Thin Films by In Situ Coating of α MnO2 Using High-Pressure and High-Temperature Sputtering. Electrochemical and Solid-State Letters, The Electrochemical Society vol. 7 (8), a235-a238. 01-01-2004
Kazemian P, Rodenburg C and Humphreys CJ (2004). Effect of experimental parameters on doping contrast of Si p-n junctions in a FEG-SEM. 01-01-2004
Datta R, Kappers MJ, Barnard JS and Humphreys CJ (2004). Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE. MRS Advances, Springer Nature vol. 831 01-01-2004
Charles MB, Kappers MJ and Humphreys CJ (2004). Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111). MRS Advances, Springer Nature vol. 831 (1), 377-381. 01-01-2004
2003
Smeeton TM, Kappers MJ, Barnard JS, Vickers ME and Humphreys CJ (2003). Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope. Applied Physics Letters, AIP Publishing vol. 83 (26), 5419-5421. 29-12-2003
Arutyunov NY, Emtsev VV, Mikhailin AV and Humphreys CJ (2003). Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR data. 01-12-2003
Oliver RA, Kappers MJ, Rice JH, Smith JD, Taylor RA, Humphreys CJ and Briggs GAD (2003). Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal. 24-11-2003
Foxon CT, Novikov SV, Belyaev AE, Zhao LX, Makarovsky O, Walker DJ, Eaves L, Dykeman RI, Danylyuk SV, Vitusevich SA, Kappers MJ, Barnard JS and Humphreys CJ (2003). Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures. 24-11-2003
Smeeton TM, Kappers MJ, Barnard JS, Vickers ME and Humphreys CJ (2003). Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy. 01-11-2003
Graham DM, Vala AS, Dawson P, Godfrey MJ, Kappers MJ, Smeeton TM, Barnard JS, Humphreys CJ and Thrush EJ (2003). Exciton localization in InGaN/GaN single quantum well structures. 01-11-2003
Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ and Humphreys CJ (2003). Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]. Applied Physics Letters, AIP Publishing vol. 83 (17), 3626-3627. 27-10-2003
Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ and Arakawa Y (2003). Time-resolved dynamics in single InGaN quantum dots. Applied Physics Letters, AIP Publishing vol. 83 (13), 2674-2676. 29-09-2003
Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ and Foxon CT (2003). Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates. Journal of Crystal Growth, Elsevier vol. 256 (3-4), 237-242. 01-09-2003
Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS and Humphreys CJ (2003). Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering. Journal of Applied Physics, AIP Publishing vol. 94 (3), 1565-1574. 01-08-2003
Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD and Taylor RA (2003). InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Applied Physics Letters, AIP Publishing vol. 83 (4), 755-757. 28-07-2003
Schönjahn C, Broom RF, Humphreys CJ, Howie A and Mentink SAM (2003). Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector. Applied Physics Letters, AIP Publishing vol. 83 (2), 293-295. 14-07-2003
Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ and Bougrioua Z (2003). Detailed interpretation of electron transport in n-GaN. Journal of Applied Physics, AIP Publishing vol. 93 (11), 9095-9103. 01-06-2003
Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ and Humphreys CJ (2003). Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. Applied Physics Letters, AIP Publishing vol. 82 (17), 2755-2757. 28-04-2003
Keast VJ, Kappers MJ and Humphreys CJ (2003). Electron energy‐loss near edge structure (ELNES) of InGaN quantum wells. 01-04-2003
Foxon CT, Novikov SV, Li T, Campion RP, Winser AJ, Harrison I, Kappers MJ and Humphreys CJ (2003). Arsenic incorporation in GaN during growth by molecular beam epitaxy. 01-04-2003
Thrush EJ, Kappers MJ, Dawson P, Vickers ME, Barnard J, Graham D, Makaronidis G, Rayment FDG, Considine L and Humphreys CJ (2003). GaN/InGaN quantum wells grown in a close coupled showerhead reactor. 01-02-2003
Smeeton TM, Kappers MJ, Barnard JS and Humphreys CJ (2003). Analysis of InGaN-GaN quantum well chemistry and interfaces by transmission electron microscopy and X-ray scattering. 01-01-2003
2002
Schönjahn C, Humphreys CJ and Glick M (2002). Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors. Journal of Applied Physics, AIP Publishing vol. 92 (12), 7667-7671. 15-12-2002
Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2002). Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]. Applied Physics Letters, AIP Publishing vol. 81 (16), 3102-3103. 14-10-2002
Keast VJ, Scott AJ, Kappers MJ, Foxon CT and Humphreys CJ (2002). Electronic structure of GaN and InxGa1-xN measured with electron energy-loss spectroscopy. Physical Review B, American Physical Society (APS) vol. 66 (12) 15-09-2002
Schönjahn C, Humphreys C and Glick M (2002). Energy filtered imaging in a FEG-SEM for enhanced dopant contrast. 01-08-2002
Thrush EJ, Kappers MJ, Dawson P, Graham D, Barnard JS, Vickers ME, Considine L, Mullins JT and Humphreys CJ (2002). GaN–InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor. 12-07-2002
Elliott SL, Broom RF and Humphreys CJ (2002). Dopant profiling with the scanning electron microscope—A study of Si. Journal of Applied Physics, AIP Publishing vol. 91 (11), 9116-9122. 01-06-2002
Chen GS, Lee PY, Boothroyd CB and Humphreys CJ (2002). Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, American Vacuum Society vol. 20 (3), 986-990. 01-05-2002
Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2002). Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms. Journal of Applied Physics, AIP Publishing vol. 91 (1), 367-374. 01-01-2002
Thomas SM and Humphreys C (2002). Colin Humphreys - A practical physicist having fun in the world of materials. MATERIALS WORLD vol. 10 (1), 11-11. 01-01-2002
Humphreys CJ (2002). Chapter 2.9.1 Theory of Electron Scattering and Electron Diffraction. Scattering 1287-1303. 01-01-2002
2001
Bright AN, Sharma N and Humphreys CJ (2001). Analysis of contacts and V‐defects in GaN device structures by transmission electron microscopy. Microscopy, Oxford University Press (OUP) vol. 50 (6), 489-495. 01-11-2001
Bright AN and Humphreys CJ (2001). Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy. Philosophical Magazine B, Taylor & Francis vol. 81 (11), 1725-1744. 01-11-2001
Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW (2001). Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells. Applied Physics Letters, AIP Publishing vol. 79 (16), 2594-2596. 15-10-2001
Cho HK, Lee JY, Kim CS, Yang GM, Sharma N and Humphreys C (2001). Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition. Journal of Crystal Growth, Elsevier vol. 231 (4), 466-473. 01-10-2001
Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque J-L and Humphreys C (2001). Material optimisation for AlGaN/GaN HFET applications. Journal of Crystal Growth, Elsevier vol. 230 (3-4), 573-578. 01-09-2001
Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A and Humphreys C (2001). Chemical mapping of InGaN MQWs. Journal of Crystal Growth, Elsevier vol. 230 (3-4), 438-441. 01-09-2001
Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ and Thrush EJ (2001). Observation of thermally activated conduction at a GaN–sapphire interface. Applied Physics Letters, AIP Publishing vol. 79 (8), 1121-1123. 20-08-2001
Keast VJ, Sharma N, Kappers M and Humphreys CJ (2001). Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 7 (S2), 1182-1183. 01-08-2001
Ofori AP and Humphreys CJ (2001). Atomic Site Occupancy of Platinum Group Metals in the γ’ (Ll2) Phase of a γ-γ’ Complex Nickel Base Superalloy Using Alchemi (Atomic Location by Channnelling Enhanced Microanalysis). Microscopy and Microanalysis, Oxford University Press (OUP) vol. 7 (S2), 346-347. 01-08-2001
Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N and Humphreys C (2001). Effects of electron-beam exposure on a ruthenium nanocluster polymer. Journal of Applied Physics, AIP Publishing vol. 90 (2), 947-952. 15-07-2001
Pankhurst DA, Botton GA and Humphreys CJ (2001). Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary. Physical Review B, American Physical Society (APS) vol. 63 (20) 08-05-2001
Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ (2001). Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals. Materials Science and Engineering B, Elsevier vol. 81 (1-3), 19-22. 01-04-2001
Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ and Davies R (2001). Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy. Journal of Applied Physics, AIP Publishing vol. 89 (6), 3143-3150. 15-03-2001
Bright AN, Tricker DM, Humphreys CJ and Davies R (2001). A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN. Journal of Electronic Materials, Springer Nature vol. 30 (3), l13-l16. 01-03-2001
Bright AN and Humphreys CJ (2001). Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy. 01-01-2001
Keast VJ, Scott AJ, Kappers MJ and Humphreys CJ (2001). Electronic structure of GaN studied with electron energy loss spectroscopy and density functional theory. 01-01-2001
Barnard JS, Sharma N, Cho HK and Humphreys CJ (2001). The chemical and electrical properties of InGaN quantum wells grown with interrupts: A comprehensive TEM case study. 01-01-2001
Tatsuoka H, koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD and Humphreys CJ (2001). Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy. Thin Solid Films, Elsevier vol. 381 (2), 231-235. 01-01-2001
Ramloll CS, Bougrioua Z, Barnard JS, Humphreys CJ and Moerman I (2001). Microstructural aspects of the early stages of GaN growth by MOCVD. 01-01-2001
Sharma N, Cho HK, Lee JY and Humphreys CJ (2001). Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells. MRS Advances, Springer Nature vol. 667 01-01-2001
2000
Saifullah MSM, Kurihara K and Humphreys CJ (2000). Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 18 (6), 2737-2744. 01-11-2000
Fairbank GB, Humphreys CJ, Kelly A and Jones CN (2000). Ultra-high temperature intermetallics for the third millennium. 01-09-2000
Botton GA, Nishino Y and Humphreys CJ (2000). Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structure. Intermetallics, Elsevier vol. 8 (9-11), 1209-1214. 01-09-2000
Sharma N, Thomas P, Tricker D and Humphreys C (2000). Chemical mapping and formation of V-defects in InGaN multiple quantum wells. Applied Physics Letters, AIP Publishing vol. 77 (9), 1274-1276. 28-08-2000
Pekarskaya E, Botton GA, Jones CN and Humphreys CJ (2000). The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloy. Intermetallics, Elsevier vol. 8 (8), 903-913. 01-08-2000
Pankhurst DA, Botton GA and Humphreys CJ (2000). The Effect of Local Symmetry on Atomic Resolution EELS Near-Edge Structures: Predictions for Grain Boundaries In NiAl. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 6 (S2), 186-187. 01-08-2000
Humphreys C (2000). Facing up to the future of materials science and technology. Materials World vol. 8 (4), 11-13. 01-01-2000
Humphreys C (2000). THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL. Vetus Testamentum, Brill Academic Publishers vol. 50 (3), 323-328. 01-01-2000
1999
Tricker DM, Jacobs K and Humphreys CJ (1999). Characterisation of Epitaxial Laterally Overgrown Gallium Nitride Using Transmission Electron Microscopy. 01-11-1999
Humphreys CJ (1999). Electrons seen in orbit. Nature, Springer Nature vol. 401 (6748), 21-22. 01-09-1999
Saifullah MSM, Botton GA, Boothroyd CB and Humphreys CJ (1999). Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3. Journal of Applied Physics, AIP Publishing vol. 86 (5), 2499-2504. 01-09-1999
Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A and Richter W (1999). A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy. Journal of Materials Research, Springer Nature vol. 14 (8), 3226-3236. 01-08-1999
Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ, Larsen PK, Grzegory I and Porowski S (1999). Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD). Journal of Crystal Growth, Elsevier vol. 204 (4), 419-428. 01-08-1999
Botton GA and Humphreys CJ (1999). Determining the bonding in intermetallics using electron energy loss spectroscopy and density functional theory2This paper was originally presented at the Kyoto Workshop on High Temperature Intermetallics in May 1998.2. 01-07-1999
Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD and Richter W (1999). The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy. Journal of Materials Research, Springer Nature vol. 14 (5), 2036-2042. 01-05-1999
LIU , PRESTON , BOOTHROYD and HUMPHREYS (1999). Quantitative analysis of ultrathin doping layers in semiconductors using high‐angle annular dark field images. Journal of Microscopy, Wiley vol. 194 (1), 171-182. 01-04-1999
LIU , BOOTHROYD and HUMPHREYS (1999). Energy‐filtered transmission electron microscopy of multilayers in semiconductors. Journal of Microscopy, Wiley vol. 194 (1), 58-70. 01-04-1999
Natusch MKH, Humphreys CJ, Menon N and Krivanek OL (1999). Experimental and theoretical study of the detection limits in electron energy-loss spectroscopy. 01-04-1999
Humphreys CJ (1999). A two‐phase charge‐density real‐space‐pairing model of high‐Tc superconductivity. Acta Crystallographica Section A: Foundations and advances, International Union of Crystallography (IUCr) vol. 55 (2‐1), 228-233. 01-03-1999
Humphreys CJ (1999). A two-phase charge-density real-space-pairing model of high-T01-03-1999
Walther T and Humphreys CJ (1999). A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy. Journal of Crystal Growth, Elsevier vol. 197 (1-2), 113-128. 01-02-1999
Elliott SL, Broom RF and Humphreys CJ (1999). Temperature and energy dependence of SEM dopant contrast. 01-01-1999
Humphreys CJ, Bright AN and Elliott SL (1999). Advances in high resolution imaging and microanalysis of Si, GaAs and GaN. 01-01-1999
Keast VJ, Midgley PA, Lloyd SJ, Thomas PJ, Weyland M, Boothroyd CB and Humphreys CJ (1999). Composition of grain boundaries and interfaces: A comparison of modern analytical techniques using a 300 kV FEGTEM. 01-01-1999
Pekarskaya E, Jones CN and Humphreys CJ (1999). Dislocations in a multiphase Ni-Al-Fe alloy. 01-01-1999
Bright AN, Brown PD, Tricker DM, Jeffs N, Foxon CT and Humphreys CJ (1999). A TEM assessment of GaN/SiC layers grown by MBE. 01-01-1999
Bright AN, Tricker DM, Davies R, Beanland R, Thomas PJ, Lloyd SJ, Midgley PA and Humphreys CJ (1999). Characterisation of ohmic contacts to n-GaN using transmission electron microscopy. 01-01-1999
Pankhurst DA, Botton GA and Humphreys CJ (1999). Obtaining bonding information from EELS near-edge structures: grain-boundaries in NiAl. 01-01-1999
Elliott SL, Broom RF, Humphreys CJ, Thrush EJ, Considine L, Thomson DB and de Boer WB (1999). FEG-SEM imaging of semiconductor dopant contrast. 01-01-1999
Sharma N, Keast VJ, Iwayama TS, Boyd I and Humphreys CJ (1999). Characterisation of silicon nanocrystals in silica and correlation with luminescence. 01-01-1999
Keast VJ, Misra A, Kung H, Mitchell TE and Humphreys CJ (1999). Compositional mapping of nanoscale metallic multilayers: a comparison of techniques. 01-01-1999
Yonenaga I, Lim S, Shindo D, Brown PD and Humphreys CJ (1999). Structure and Climb of Faulted Dipoles in GaAs. physica status solidi (a) – applications and materials science, Wiley vol. 171 (1), 53-57. 01-01-1999
Smith JP, Eccleston W, Brown PD and Humphreys CJ (1999). Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon. Journal of The Electrochemical Society, The Electrochemical Society vol. 146 (1), 306-312. 01-01-1999
Chen GS and Humphreys CJ (1999). Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials. Journal of Applied Physics, AIP Publishing vol. 85 (1), 148-152. 01-01-1999
Sharma N, Tricker D, Keast V, Hooper S, Heffernan J, Barnes J, Kean A and Humphreys C (1999). The Effect of the Buffer Layer on the Structure, Mobility and Photoluminescence of MBE grown GaN. 01-01-1999
Brown PD, Weyher JL, Boothroyd CB, Foord DT, Zauner ARA, Hageman PR, Larsen PK, Bockowski M and Humphreys CJ (1999). Inversion domain nucleation in homoepitaxial GaN. 01-01-1999
Moodie AF, Etheridge J and Humphreys CJ (1999). GEOMETRY OF THREE BEAM PHASE DETERMINATION. 01-01-1999
Etheridge J, Moodie AF and Humphreys CJ (1999). DIRECT MEASUREMENT OF PHASE-INVARIANTS AND STRUCTURE AMPLITUDES FROM 3 BEAM CBED PATTERNS. 01-01-1999
Whitfield HJ, Moodie AF, Etheridge J and Humphreys CJ (1999). THE VALIDITY OF QUASI-KINEMATIC THEORY IN ELECTRON CRYSTALLOGRAPHY. 01-01-1999
1998
Lim S-H, Shindo D, Yonenaga I, Brown PD and Humphreys CJ (1998). Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs. Physical Review Letters, American Physical Society (APS) vol. 81 (24), 5350-5353. 14-12-1998
Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux. Japanese Journal of Applied Physics, IOP Publishing vol. 37 (12R) 01-12-1998
Ogawa H, Watanabe M, Ohsato H and Humphreys C (1998). Microwave dielectric properties of (Y01-12-1998
Yonenaga I, Brown PD and Humphreys CJ (1998). Climb of dislocations in GaAs by irradiation. Materials Science and Engineering A, Elsevier vol. 253 (1-2), 148-150. 01-09-1998
Watanabe M, Ogawa H, Ohsato H and Humphreys C (1998). Microwave Dielectric Properties of Y2Ba(Cu1-xZnx)O5 Solid Solutions. 01-09-1998
Chen GS, Boothroyd CB and Humphreys CJ (1998). Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 78 (2), 491-506. 01-08-1998
Nishino Y, Inkson BJ, Ogawa T and Humphreys CJ (1998). Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3 Al alloys. Philosophical Magazine Letters, Taylor & Francis vol. 78 (2), 97-103. 01-08-1998
Humphreys C (1998). Shaping the future of materials science. Materials World vol. 6 (6), 352-355. 01-06-1998
Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y and Humphreys CJ (1998). Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy. Journal of Applied Physics, AIP Publishing vol. 83 (10), 5504-5508. 15-05-1998
Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ and Sutton AP (1998). Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study. Physical Review B, American Physical Society (APS) vol. 57 (3), 1505-1509. 15-01-1998
Natusch MKH, Botton GA, Humphreys CJ and Krivanek OL (1998). The ultimate detection limits of electron energy-loss spectroscopy. 01-01-1998
Moodie AF, Etheridge J and Humphreys CJ (1998). The Coulomb interaction and the direct measurement of structural phase. 01-01-1998
Natusch MKH, Botton GA and Humphreys CJ (1998). Local electronic structure of defects in GaN from spatially resolved electron energy-loss spectroscopy. 01-01-1998
Brown PD and Humphreys CJ (1998). Electron Microscopy, Electrical Activity, Artefacts and the Assessment of Semiconductor Epitaxial Growth. 01-01-1998
Natusch MKH, Botton GA, Krivanek OL and Humphreys CJ (1998). Detection limits in electron energy-loss spectroscopy and energy-filtered imaging. 01-01-1998
Campbell LCI and Humphreys CJ (1998). Experimental investigation of the effect of defocus on beam diameter in focused ion beam milling. 01-01-1998
Natusch MKH, Botton GA and Humphreys CJ (1998). A simple and efficient way to obtain more information about interband transitions from an electron energy-loss spectrum in the low-loss region. 01-01-1998
Tricker DM, Bright AN, Brown PD, Korakakis D, Cheng TS, Foxon CT and Humphreys CJ (1998). A TEM study of a GaN/InGaN superlattice structure grown by MBE. 01-01-1998
Pankhurst DA, Botton GA and Humphreys CJ (1998). A joint theoretical and experimental investigation of bonding character at a grain boundary in the B2 compound NiAl. 01-01-1998
Natusch MKH, Botton GA, Krivanek OL and Humphreys CJ (1998). Characterisation of a Gatan Imaging Filter mounted on a dedicated STEM. 01-01-1998
Saifullah MSM, Boothroyd CB, Botton GA and Humphreys CJ (1998). Irradiation damage of inorganic resists on a silicon substrate. 01-01-1998
Liu CP, Boothroyd CB and Humphreys CJ (1998). The Compton scattering distribution from InP by electron spectroscopic diffraction. 01-01-1998
Liu CP, Boothroyd CB and Humphreys CJ (1998). Energy-Filtered Transmission Electron Microscopy of Multilayers in Semiconductors. 01-01-1998
Etheridge J, Moodie AF and Humphreys CJ (1998). Direct measurement of structure amplitudes from three beam interactions. 01-01-1998
Natusch MKH, Botton GA and Humphreys CJ (1998). Evidence for charged defects in wurtzite GaN from spatially resolved electron energy-loss spectroscopy. 01-01-1998
Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ and Temmerman WM (1998). Electronic Structure, Charge Transfer and Bonding in Intermetallics Using EELS and Density Functional Theory. MRS Advances, Springer Nature vol. 552 01-01-1998
Pekarskaya E, Humphreys CJ and Jones CN (1998). Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr Additions. MRS Advances, Springer Nature vol. 552 01-01-1998
Watanabe M, Ogawa H, Ohsato H and Humphreys C (1998). Microwave dielectric properties of Y01-01-1998
Bright A, Brown PD, Tricker D and Humphreys C (1998). RHEED for the rapid structural assessment of epitaxial GaN and metallisation layers. 01-01-1998
Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ (1998). High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS vol. 37 (12A), 6556-6561. 01-01-1998
Tricker DM, Brown PD, Cheng TS, Foxon CT and Humphreys CJ (1998). A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates. 01-01-1998
Humphreys C (1998). The Number of People in the Exodus from Egypt: Decoding Mathematically the Very Large Numbers in Numbers I and XXVI. Vetus Testamentum, Brill Academic Publishers vol. 48 (2), 196-213. 01-01-1998
1997
Kaiser U, Brown PD, Chuvilin A, Khodos II, Fissel A, Richter W, Preston A and Humphreys CJ (1997). Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE. 22-12-1997
Chen GS and Humphreys CJ (1997). Investigation of the proximity effect in amorphous AlF3 electron-beam resists. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 15 (6), 1954-1960. 01-11-1997
Humphreys C (1997). Book Review: The Economic Laws of Scientific Research, Terence Kealey. Macmillan Press, Basingstoke and London, 1996. £47.50 (hardback). 0-333-56045-0. European Review, Cambridge University Press (CUP) vol. 5 (4), 443-445. 01-10-1997
Walther T, Humphreys CJ and Cullis AG (1997). Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy. Applied Physics Letters, AIP Publishing vol. 71 (6), 809-811. 11-08-1997
Botton GA and Humphreys CJ (1997). Analysis of EELS near edge structures to study the bonding character in intermetallic alloys. Micron, Elsevier vol. 28 (4), 313-319. 01-08-1997
Xin Y, Wallis D, Browning N, Sivananthan S, Pennycook S and Humphreys C (1997). Interfaces and Defects in Opto-Electronic Semiconductor Films Studied by Atomic Resolution STEM. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 3 (S2), 461-462. 01-08-1997
Liu C, Dunin-Borkowski R, Boothroyd C, Brown P and Humphreys C (1997). Characterization of Ultrathin Doping Layers in Semiconductors. Microscopy and Microanalysis, Oxford University Press (OUP) vol. 3 (4), 352-363. 01-07-1997
Botton GA, Burnell G, Humphreys CJ, Yadav T and Withers JC (1997). Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalysts. Journal of Physics and Chemistry of Solids, Elsevier vol. 58 (7), 1091-1102. 01-07-1997
Wiezorek JMK, Humphreys CJ and Fraser HL (1997). Determining directly from experiment the magnitude of the Burgers vector of glissile c-component dislocations in Ti Al. Philosophical Magazine Letters, Taylor & Francis vol. 75 (5), 281-290. 01-05-1997
Xin Y, Brown PD, Humphreys CJ, Cheng TS and Foxon CT (1997). Domain boundaries in epitaxial wurtzite GaN. Applied Physics Letters, AIP Publishing vol. 70 (10), 1308-1310. 10-03-1997
Xin Y, Brown PD, Dunin-Borkowski RE, Humphreys CJ, Cheng TS and Foxon CT (1997). Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy. Journal of Crystal Growth, Elsevier vol. 171 (3-4), 321-332. 01-02-1997
Brown PD, Tricker DM, Xin Y, Chengt TS, Foxont CT, Evanst D, Galloway SA, Brock J and Humphreys CJ (1997). A Combined Tem/Rheed, Sem/Cl Study Of Epitaxial Gan. 01-01-1997
Liu CP, Brown PD, Boothroyd CB and Humphreys CJ (1997). The effects of surface relaxation and ion thinning on δ-doped semiconductor cross-sections. 01-01-1997
Natusch MKH, Botton GA and Humphreys CJ (1997). Developing a methodology for the electron energy-loss spectroscopy of defects in GaN. 01-01-1997
Natusch MKH, Botton GA, Broom RF, Brown PD, Tricker DM and Humphreys CJ (1997). Local Electronic Structure Of Defects In Gan From Spatially Resolved Electron Energy-Loss Spectroscopy. 01-01-1997
Walther T, Humphreys CJ and Robbins DJ (1997). Diffusion and Surface Segregation in Thin SiGe/Si Layers Studied by Scanning Transmission Electron Microscopy. 01-01-1997
Tricker DM, Natusch MKH, Boothroyd CB, Xin Y, Brown PD, Cheng TS, Foxon CT and Humphreys CJ (1997). Probing the effect of defects on band structure in GaN. 01-01-1997
Xin Y, Brown PD, Cheng TS, Foxon CT and Humphreys CJ (1997). Domain boundaries in epitaxial GaN grown on {(111)over-bar}B GaAs and GaP by molecular beam epitaxy. 01-01-1997
Brown PD, Smith JP, Eccleston W and Humphreys CJ (1997). Structural and electronic properties of partially crystallised silicon. 01-01-1997
Botton GA, Guo G-Y, Temmerman WM and Humphreys CJ (1997). Electron Energy Loss Spectroscopy as a Tool to Probe the Electronic Structure in Intermetallic Alloys. 01-01-1997
Tricker DM, Brown PD, Martin G, Lu J, Westwood DI, Hill P, Haworth L, MacDonald JE, Cheng TS, Foxon CT and Humphreys CJ (1997). A Tem Study of the Microstructural Evolution of MBE-Grown GaN. 01-01-1997
Liu CP, Boothroyd CB, Brown PD and Humphreys CJ (1997). The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imaging. 01-01-1997
Tatsuoka H, Brown PD, Xin Y, Isaji K, Kuwabara H, Nakanishi Y, Nakamura T, Fujiyasu H and Humphreys CJ (1997). Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by hot-wall epitaxy. 01-01-1997
Kaiser U, Brown PD, Jinschek J, Adamik M, Humphreys CJ, Karmann S, Fissel A, Pfennighaus K and Richter W (1997). Microstructural investigations of silicon carbide and aluminium nitride MBE layers on silicon substrates. 01-01-1997
Walther T, Humphreys CJ, Cullis AG and Robbins DJ (1997). A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wells. 01-01-1997
Cheng TS, Foxon CT, Ren GB, Jeffs NJ, Orton JW, Novikov SV, Xin Y, Brown PD, Humphreys CJ and Halliwell M (1997). Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy. 01-01-1997
1996
Brown PD and Humphreys CJ (1996). Scanning transmission electron beam induced conductivity investigation of a Si/Si1− x Ge x /Si heterostructure. Journal of Applied Physics, AIP Publishing vol. 80 (4), 2527-2529. 15-08-1996
Etheridge J, Moodie AF and Humphreys CJ (1996). Direct determination of phase from three-beam convergent-beam diffraction patterns of centrosymmetric crystals. 08-08-1996
Harrowell RV (1996). Missed opportunities for high-temperature superconductivity. Physics World, IOP Publishing vol. 9 (8), 15-15. 01-08-1996
Botton GA, Guo GY, Temmerman WM and Humphreys CJ (1996). Experimental and theoretical study of the electronic structure of Fe, Co, and Ni aluminides with the B2 structure. Physical Review B, American Physical Society (APS) vol. 54 (3), 1682-1691. 15-07-1996
Chen GS, Boothroyd CB and Humphreys CJ (1996). Electron-beam induced crystallization transition in self-developing amorphous AlF3 resists. Applied Physics Letters, AIP Publishing vol. 69 (2), 170-172. 08-07-1996
Moodie AF, Etheridge J and Humphreys CJ (1996). The Symmetry of Three‐Beam Scattering Equations: Inversion of Three‐Beam Diffraction Patterns from Centrosymmetric Crystals. Acta Crystallographica Section A: Foundations and advances, International Union of Crystallography (IUCr) vol. 52 (4), 596-605. 01-07-1996
Inkson BJ and Humphreys CJ (1996). High-resolution electron microscopy study of the junction between a coherent {111} and an incoherent {121} twin boundary in TiAl. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 73 (6), 1647-1661. 01-06-1996
Inkson BJ and Humphreys CJ (1996). Dislocations at 120° order interfaces in TiAl. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 73 (5), 1333-1345. 01-05-1996
Loginov YY, Brown PD and Humphreys CJ (1996). Effect of a doping impurity on the formation of structural defects in CdTe irradiated by electrons and ions. Physics of the Solid State vol. 38 (4), 692-697. 01-04-1996
Loginov YY, Brown PD and Humphreys CJ (1996). Formation of structural defects in CdTe and CdZnTe heteroepitaxial layers grown on GaAs. Physics of the Solid State vol. 38 (2), 272-277. 01-02-1996
Xin Y, Brown PD, Boothroyd CB, Preston AR, Humphreys CJ, Cheng TS, Foxon CT, Andrianov AV and Orton JW (1996). TEM and PL characterisation of MBE-grown epitaxial GaN/GaAs. 01-01-1996
Chen Q, Knowles KM, Humphreys CJ and Wu XF (1996). Atom positions in the R-phase unit cell in TiNi shape memory alloy. Journal of Materials Science, Springer Nature vol. 31 (16), 4227-4231. 01-01-1996
Loginov YY, Brown PD and Humphreys CJ (1996). Defect Formation in ZnTe and (Cd,Zn)Te Epitaxial Layers Grown on (001) GaAs. Inorganic Materials vol. 32 (1), 22-25. 01-01-1996
Cheng TS, Foxon CT, Jeffs NJ, Hughes OH, Ren BG, Xin Y, Brown PD, Humphreys CJ, Andranov AV, Lacklison DE, Orton JW and Halliwell M (1996). Growth of GaN films on (001) and (111) GaAs surfaces by a modified MBE method. MRS Internet Journal of Nitride Semiconductor Research, Springer Nature vol. 1 (1) 01-01-1996
1995
Wiezorek JMK, Court SA and Humphreys CJ (1995). On the dissociation of prism plane superdislocations in Ti3Al. Philosophical Magazine Letters, Taylor & Francis vol. 72 (6), 393-403. 01-12-1995
Xin Y, Brown PD, Boothroyd CB, Humphreys CJ, Tatsuoka H, Kuwabara H, Oshita M, Nakamura T, Fujiyasu H and Nakanishi Y (1995). The microstructure of MnSb grown on (001) GaAs by hot wall epitaxy. Journal of Crystal Growth, Elsevier vol. 156 (3), 155-162. 01-11-1995
Walther T, Humphreys CJ, Cullis AG and Robbins DJ (1995). A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy. 01-11-1995
Loginov YY, Brown PD and Humphreys CJ (1995). TEM Investigation of Point Defect Interactions in II-VI Compounds. 01-11-1995
Walther T, Humphreys CJ, Grimshaw MP and Churchill AC (1995). Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAs. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 72 (4), 1015-1030. 01-10-1995
Saunders M, Bird DM, Zaluzec NJ, Burgess WG, Preston AR and Humphreys CJ (1995). Measurement of low-order structure factors for silicon from zone-axis CBED patterns. Ultramicroscopy, Elsevier vol. 60 (2), 311-323. 01-09-1995
Wiezorek JMK and Humphreys CJ (1995). On the hierarchy of planar fault energies in TiAl. Scripta Metallurgica et Materialia, Elsevier vol. 33 (3), 451-458. 01-08-1995
Brown PD, Loginov YY, Stobbs WM and Humphreys CJ (1995). Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substrates. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 72 (1), 39-57. 01-07-1995
Xin Y, Zhou W and Humphreys CJ (1995). HREM studies of the (001) surface of YBa2Cu4O8. Physica C: Superconductivity and its Applications, Elsevier vol. 249 (3-4), 319-332. 01-07-1995
Inkson BJ and Humphreys CJ (1995). High-resolution electron microscopy observation of a 1/2(112) superdislocation in TiAl. Philosophical Magazine Letters, Taylor & Francis vol. 71 (6), 307-312. 01-06-1995
Inkson BJ, Boothroyd CB and Humphreys CJ (1995). Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phase. Acta Metallurgica et Materialia, Elsevier vol. 43 (4), 1429-1438. 01-04-1995
Brown PD and Humphreys CJ (1995). Assessment of semiconductor epitaxial growth by transmission electron microscopy. Materials Science and Technology, SAGE Publications vol. 11 (1), 54-65. 01-01-1995
Bottonm GA, Guo GY, Temmerman WM, Szotek Z, Humphreys CJ, Wango Y, Stocks GM, Nicholson DMC and Shelton WA (1995). EELS Studies of B2-Type Transition Metal Aluminides: Experiment and Theory. 01-01-1995
Saifullah MSM, Boothroyd CB, Botton GA and Humphreys CJ (1995). Electron Beam Induced Crystallisation in Iron (III) Fluoride. 01-01-1995
Morgan CJ and Humphreys CJ (1995). The dependence of the rate of electron beam damage in amorphous aluminium oxide on beam current density. 01-01-1995
Peters MA, Botton GA and Humphreys CJ (1995). The precipitation of beta' Ni2TiAl from Al-doped beta Ni-Ti alloys. 01-01-1995
Walther T, Schaublin RE, DuninBorkowski RE, Boothroyd CB, Humphreys CJ and Stobbs WM (1995). The role of plasmon scattering in the quantitative contrast analysis of high-resolution lattice images of GaAs. 01-01-1995
Walther T and Humphreys CJ (1995). The limitations of pattern recognition and displacement measurement techniques for evaluating HREM images of strained semiconductor interfaces. 01-01-1995
Brown PD and Humphreys CJ (1995). STEBIC of Si/Si1-xGex/Si and high voltage REBIC of CdTe. 01-01-1995
Walther T, Hetherington CJD and Humphreys CJ (1995). A contribution to the quantitative comparison of experimental high-resolution electron micrographs and image simulations. 01-01-1995
Inkson BJ and Humphreys CJ (1995). HREM observation of omega-phase in an industrial TiAl alloy. 01-01-1995
Walther T, Boothroyd CB and Humphreys CJ (1995). Strain relaxation induced local crystal tilts at Si/SiGe interfaces in cross-sectional transmission electron microscope specimens. 01-01-1995
Morgan CJ, Boothroyd CB and Humphreys CJ (1995). A comparative study of electron beam damage in crystalline and amorphous aluminium oxide. 01-01-1995
Morgan CJ and Humphreys CJ (1995). The proximity effect for electron beam lithography of aluminium oxide. 01-01-1995
Yonenaga I, Brown PD, Burgess WG and Humphreys CJ (1995). Faulted dipoles in Indium-doped GaAs. 01-01-1995
Xin Y, Brown PD, Schaublin RE and Humphreys CJ (1995). Relaxation of (001)Si/Si1-xGex/Si heterostructures. 01-01-1995
Saifullah MSM, Boothroyd CB, Morgan CJ and Humphreys CJ (1995). Electron beam nanolithography of FeF3 using a scanning transmission electron microscope. 01-01-1995
Xin Y, Brown PD and Humphreys CJ (1995). Dislocation configurations in low lattice-mismatched Si/SiGe/(001)Si heterostructures. 01-01-1995
Botton GA, Guo GY and Humphreys CJ (1995). The bonding character of intermetallic alloys using EELS. 01-01-1995
Brown PD, Loginov YY, Boothroyd CB and Humphreys CJ (1995). Artefacts within ion beam milled semiconductors. 01-01-1995
Loginov YY, Brown PD and Humphreys CJ (1995). Point defect interactions in doped II-VI compounds under ion and electron beam irradiation. 01-01-1995
Wiezorek JMK, Preston AR and Humphreys CJ (1995). Column approximation effects on partial dislocation weak beam images. 01-01-1995
Morgan CJ and Humphreys CJ (1995). A Model for Estimating the Stress Induced During Oxidation of Sharp Silicon Structures. 01-01-1995
Wiezorek JMK, Botton G, Humphreys CJ and Fraser HL (1995). A TEM study of dislocation decoration in gamma-TiAl. 01-01-1995
CAMPBELL J and HUMPHREYS C (1995). A FRAMEWORK FOR THE FUTURE. MATERIALS WORLD vol. 3 (6), 286-287. 01-01-1995
1994
Cherns D, Mylonas S, Chou CT, Wu J, Ashenford DE, Lunn B, Perovic DD and Humphreys CJ (1994). Dislocation nucleation and propagation in semiconductor heterostructures. 01-12-1994
Cullen SL, Boothroyd CB and Humphreys CJ (1994). Interpretation of the {100} fringes in lattice images from the centre of carbon nanotubes. 01-11-1994
WHITE RS and HUMPHREYS CJ (1994). Famines and cataclysmic volcanism. Geology Today, Wiley vol. 10 (5), 181-185. 01-09-1994
Burgess WG, Preston AR, Botton GA, Zaluzec NJ and Humphreys CJ (1994). Benefits of energy filtering for advanced convergent beam electron diffraction patterns. Ultramicroscopy, Elsevier vol. 55 (3), 276-283. 01-09-1994
Brown PD, Loginov YY, Mullins JT, Durose K, Brinkman AW and Humphreys CJ (1994). Transmission electron microscopy investigations of II–VI/GaAs heterostructures. Journal of Crystal Growth, Elsevier vol. 138 (1-4), 538-544. 01-04-1994
Wiezorek JMK, Preston AR, Court SA, Fraser HL and Humphreys CJ (1994). Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffraction. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 69 (2), 285-299. 01-02-1994
Boothroyd CB, Dunin-borkowski RE, Stobbs WM and Humphreys CJ (1994). Quantifying The Effects Of Amorphous Layers on Image Contrast Using Energy Filtered Transmission Electron Microscopy. 01-01-1994
ALLEN RM, CHEN GS and HUMPHREYS CJ (1994). Electron beam damage in amorphous AlF3. A study of mass loss vs time. 01-01-1994
CHEN GS, MORGAN CJ and HUMPHREYS CJ (1994). A study of proximity effects in AlF3 electron beam resists. 01-01-1994
INKSON BJ and HUMPHREYS CJ (1994). An HREM study of 1/6<112> intrinsic dipole formation in a Ti-Al alloy. 01-01-1994
BOTTON GA and HUMPHREYS CJ (1994). EELS near edge structures in B2 intermetallics: A systematic series. 01-01-1994
CULLEN SL, BOTTON G and HUMPHREYS CJ (1994). Momentum transfer dependence of the low energy loss distribution of carbon nanotubes. 01-01-1994
WALTHER T, BOOTHROYD CB, HUMPHREYS CJ and CULLIS AG (1994). The effect of thin crystal strain relaxation on high-resolution images of Si/Si0.8Ge0.2 quantum wells. 01-01-1994
BROWN PD and HUMPHREYS CJ (1994). Defect anisotropy in (001) oriented sphalerite heteroepitaxial layers. 01-01-1994
BOTTON GA, BURNELL G, HUMPHREYS CJ, YADAV T and WITHERS JC (1994). From carbon socks to web-like wires: The microstructure of multi-metal filled carbon nanostructures by TEM and EELS. 01-01-1994
Wiezorek JMK, Court SA and Humphreys CJ (1994). Experimental Tem and Image Simulation of Dislocations in Ti3A1. 01-01-1994
BURGESS W, SAUNDERS M, BIRD DM, PRESTON AR, ZALUZEC NJ and HUMPHREYS CJ (1994). Structure factor determination in germanium by zone axis CBED. 01-01-1994
Cullen SL, Morgan CJ, Boothroyd CB and Humphreys CJ (1994). Hrem Lattice Image Simulations of Circular Cross-Sectional Multishell Carbon Nanotubes. 01-01-1994
Loginov YY, Brown PD and Humphreys CJ (1994). Control of Point Defects in Semiconductors. 01-01-1994
1993
Boothroyd CB and Humphreys CJ (1993). Measuring the height of steps on MgO cubes using Fresnel contrast in a scanning transmission electron microscope. 01-12-1993
White RS and Humphreys C (1993). Evolution and religion. Nature, Springer Nature vol. 366 (6453), 296-296. 01-12-1993
INKSON BJ, BOOTHROYD CB and HUMPHREYS CJ (1993). Boron segregation in a (Fe, V, B) TiAl based alloy. 01-11-1993
Inkson BJ, Boothroyd CB and Humphreys CJ (1993). Microstructure of A γ−α2−β TiAl alloy containing iron and vanadium. Acta Metallurgica et Materialia, Elsevier vol. 41 (10), 2867-2876. 01-10-1993
Chen GS, Boothroyd CB and Humphreys CJ (1993). Novel fabrication method for nanometer-scale silicon dots and wires. Applied Physics Letters, AIP Publishing vol. 62 (16), 1949-1951. 19-04-1993
WIEZOREK JMK and HUMPHREYS CJ (1993). DETERMINATION OF STACKING-FAULT ENERGIES OF THE INTERMETALLIC TI-52AT-PERCENT AL. 01-01-1993
BROWN PD, KIRKLAND A and HUMPHREYS CJ (1993). HIGH-RESOLUTION PROFILE IMAGING OF (HG, MN)TE. 01-01-1993
CULLEN SL, BOTTON G, KIRKLAND AI, BROWN PD and HUMPHREYS CJ (1993). INVESTIGATIONS OF STRUCTURE AND DEGRADATION OF CARBON NANOTUBES BY EELS AND HREM. 01-01-1993
CHEN GS, BOOTHROYD CB and HUMPHREYS CJ (1993). ELECTRON-INDUCED CRYSTALLIZATION IN ALUMINUM TRIFLUORIDE. 01-01-1993
CHEN GS, BOOTHROYD CB and HUMPHREYS CJ (1993). DIRECT ELECTRON-BEAM FABRICATION OF NANOMETER-SCALE SILICON COLUMNS. 01-01-1993
HUMPHREYS CJ (1993). ELECTRON-MICROSCOPE INVESTIGATIONS OF HETEROSTRUCTURES, NANOSTRUCTURES AND MISFIT DISLOCATIONS. 01-01-1993
Inkson BJ, Boothroyd CB and Humphreys CJ (1993). Boron segregation in a (Fe, V, B) TiAl based alloy. 01-01-1993
BROWN PD, BITHELL EG, HUMPHREYS CJ, SKEVINGTON PJ, PERRIN SD and DAVIES GJ (1993). THE EFFECT OF THE IMAGING ELECTRON-BEAM ON INP/INGAAS MQW STRUCTURES. 01-01-1993
BROWN PD, BITHELL EG, HUMPHREYS CJ, SKEVINGTON PJ, CANNARD PJ and DAVIES GJ (1993). THE EFFECT OF GROWTH INTERRUPTS ON CBE GROWN INP. 01-01-1993
MORGAN CJ, KIRKLAND AI and HUMPHREYS CJ (1993). AN HREM INVESTIGATION OF THE DIAMOND HEXAGONAL PHASE IN A SILICON CONE FROM A VACUUM MICROELECTRONIC DEVICE. 01-01-1993
PRESTON AR, BURGESS WG, PICKUP CJ and HUMPHREYS CJ (1993). DEBYE-WALLER FACTOR DETERMINATION FROM LACBED PATTERNS. 01-01-1993
SAUNDERS M, BIRD DM, ZALUZEC NJ, BURGESS WG and HUMPHREYS CJ (1993). ACCURATE STRUCTURE FACTOR REFINEMENT FROM ZONE-AXIS CBED PATTERNS. 01-01-1993
ALLEN RM, LLOYD SJ and HUMPHREYS CJ (1993). A STUDY OF SAMPLE THICKNESS DEPENDENCE IN ELECTRON-BEAM HOLE-DRILLING OF INORGANIC MATERIALS. 01-01-1993
BURGESS WG, SAUNDERS M, BIRD D, BOTTON G, PRESTON AR, HUMPHREYS CJ and ZALUZEC NJ (1993). STRUCTURE FACTOR DETERMINATION BY ZONE-AXIS CBED. 01-01-1993
1992
Humphreys CJ and Waddington WG (1992). The Jewish Calendar, A Lunar Eclipse and the Date of Christ’s Crucifixion. Tyndale Bulletin, Tyndale House vol. 43 (2) 01-11-1992
MORGAN C, CHEN GS, BOOTHROYD C, BAILEY S and HUMPHREYS C (1992). ULTIMATE LIMITS OF LITHOGRAPHY. PHYSICS WORLD vol. 5 (11), 28-32. 01-01-1992
1991
Zhou X, Preston AR and Humphreys CJ (1991). TEM study of nitrogen enhanced oxygen precipitation in nitrogen-doped Czochralski-grown silicon. 01-12-1991
Morgan CJ, Bailey SJ, Preston AR and Humphreys CJ (1991). Electron beam nanolithography of sputtered amorphous Al01-12-1991
Humphreys CJ, Bullough TJ, Devenish RW and Maher DM (1991). 100 keV electron beam damage of metals, ceramics and semiconductors - implications for microanalysis and nanolithography. 01-12-1991
HUMPHREYS C (1991). State of British science. Nature, Springer Nature vol. 351 (6327), 513-513. 01-06-1991
Humphreys CJ, Maher DM, Eaglesham DJ, Kvam EP and Salisbury IG (1991). The origin of dislocations in multilayers. Journal de Physique III, EDP Sciences vol. 1 (6), 1119-1130. 01-06-1991
HUMPHREYS CJ (1991). THE STAR OF BETHLEHEM - A COMET IN 5 BC - AND THE DATE OF THE BIRTH OF CHRIST. QUARTERLY JOURNAL OF THE ROYAL ASTRONOMICAL SOCIETY vol. 32 (4), 389-407. 01-01-1991
ZHOU X, PRESTON AR and HUMPHREYS CJ (1991). TEM STUDY OF NITROGEN ENHANCED OXYGEN PRECIPITATION IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICON. 01-01-1991
Humphreys C (1991). 100 keV electron beam damage of metals and oxides. Micron, Elsevier vol. 22 (1-2), 147-148. 01-01-1991
Humphreys CJ (1991). Ceramic Superconductors. Concise Encyclopedia of Advanced Ceramic Materials 67-73. 01-01-1991
1990
HUMPHREYS C and WADDINGTON WG (1990). Crucifixion date. Nature, Springer Nature vol. 348 (6303), 684-684. 01-12-1990
Kvam EP, Maher DM and Humphreys CJ (1990). Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si. Journal of Materials Research, Springer Nature vol. 5 (9), 1900-1907. 01-09-1990
Humphreys CJ, Bullough TJ, Devenish RW, Maher DM and Turner PS (1990). The interaction of electron beams with solids - Some new effects. Microscopy and Microanalysis, Cambridge University Press (CUP) vol. 48 (4), 788-789. 01-08-1990
Turner PS, Bullough TJ, Devenish RW, Maher DM and Humphreys CJ (1990). Nanometre hole formation in MgO using electron beams. Philosophical Magazine Letters, Taylor & Francis vol. 61 (4), 181-193. 01-04-1990
Zhang JG, McCartney DG and Humphreys CJ (1990). On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-Tc superconductors. Superconductor Science and Technology, IOP Publishing vol. 3 (4) 01-04-1990
1989
Humphreys CJ (1989). Book Review: Transmission Electron Microscopy. By L. Reimer. Angewandte Chemie International Edition, Wiley vol. 28 (12), 1763-1764. 01-12-1989
Humphreys CJ (1989). Transmission Electron Microscopy. By L. Reimer. Springer Series in Optical Sciences, Springer‐Verlag, Second Edition, 1989, xiii, 547 pp., paperback, DM 128. – ISBN 3‐540‐50499‐0. Angewandte Chemie, Wiley vol. 101 (12), 1803-1804. 01-12-1989
Humphreys C (1989). Controlling crystal growth. Nature, Springer Nature vol. 341 (6244), 689-689. 01-10-1989
Humphreys C (1989). Materials Science and Engineering in Britain. Angewandte Chemie International Edition, Wiley vol. 28 (8), 1077-1078. 01-08-1989
Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ and Bean JC (1989). Dislocation nucleation near the critical thickness in GeSi/Si strained layers. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 59 (5), 1059-1073. 01-05-1989
Devenish RW, Eaglesham DJ, Maher DM and Humphreys CJ (1989). Nanolithography using field emission and conventional thermionic electron sources. Ultramicroscopy, Elsevier vol. 28 (1-4), 324-329. 01-04-1989
Humphreys CJ (1989). Radiation effects. Ultramicroscopy, Elsevier vol. 28 (1-4), 357-358. 01-04-1989
Fraser HL, Maher DM, Knoell RV, Eaglesham DJ, Humphreys CJ and Bean JC (1989). Compositional modulations in Ge x Si1− x heteroepitaxial layers. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 7 (2), 210-213. 01-03-1989
Eaglesham DJ, Maher DM, Fraser HL, Humphreys CJ and Bean JC (1989). Tetragonal and monoclinic forms of Ge x Si1− x epitaxial layers. Applied Physics Letters, AIP Publishing vol. 54 (3), 222-224. 16-01-1989
Eaglesham DJ, Maher DM, Kvam EP, Bean JC and Humphreys CJ (1989). New Source of Dislocations in GexSi1-x/Si(100) Strained Epitaxial Layers. Physical Review Letters, American Physical Society (APS) vol. 62 (2), 187-190. 09-01-1989
Humphreys C (1989). Materials science and engineering in Britain. Advanced Materials, Wiley vol. 1 (8‐9), 249-250. 01-01-1989
Kvam EP, Maher DM and Humphreys CJ (1989). Dislocation Behaviour in GexSi1-x Epilayers on (001)Si. MRS Advances, Springer Nature vol. 160 01-01-1989
Bullough TJ, Humphreys CJ and Devenish RW (1989). Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si And MgO. MRS Advances, Springer Nature vol. 157 01-01-1989
Humphreys CJ, Eaglesham DJ, Maher DM, Fraser HL and Salisbury I (1989). Strains and Misfit Dislocations at Interfaces. Evaluation of Advanced Semiconductor Materials by Electron Microscopy 203-216. 01-01-1989
1988
Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA and Birchall JD (1988). High temperature superconducting ceramics. Materials Science and Engineering B, Elsevier vol. 1 (3-4), 229-235. 01-12-1988
Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ, Green GS, Tanner BK and Bean JC (1988). X-ray topography of the coherency breakdown in Ge x Si1− x /Si(100). Applied Physics Letters, AIP Publishing vol. 53 (21), 2083-2085. 21-11-1988
Humphreys CJ, Maher DM, Fraser HL and Eaglesham DJ (1988). Convergent-beam imaging—a transmission electron microscopy technique for investigating small localized distortions in crystals. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 58 (5), 787-798. 01-11-1988
BRAUNSTEIN P, DEVENISH R, GALLEZOT P, HEATON BT, HUMPHREYS CJ, KERVENNAL J, MULLEY S and RIES M (1988). ChemInform Abstract: Silica‐Supported Fe‐Pd Bimetallic Particles ‐ Formation from Mixed‐Metal Clusters and Catalytic Activity. ChemInform, Wiley vol. 19 (42), no-no. 18-10-1988
Taylor S, Eccleston W, Ringnalda J, Maher DM, Eaglesham DJ, Humphreys CJ and Godfrey DJ (1988). Plasma Anodisation of Silicon for Advanced VLSI. Journal de Physique Archives, EDP Sciences vol. 49 (C4) 01-09-1988
Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S and Ries M (1988). Silica‐Supported FePd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic Activity. Angewandte Chemie International Edition, Wiley vol. 27 (7), 927-929. 01-07-1988
Braunstein P, Devenish R, Gallezot P, Heaton BT, Humphreys CJ, Kervennal J, Mulley S and Ries M (1988). Fe‐Pd‐Bimetallpartikel auf SiO2‐Trägern – Bildung aus Heterometallclustern und katalytische Aktivität. Angewandte Chemie, Wiley vol. 100 (7), 972-973. 01-07-1988
Taylor S, Eccleston W, Ringnalda J, Maher DM, Eaglesham DJ, Humphreys CJ and Godfrey DJ (1988). Plasma anodisation of silicon for advanced VLSI. 01-01-1988
Humphreys CJ, Eaglesham DJ, Maher DM and Fraser HL (1988). CBED and CBIM from semiconductors and superconductors. Ultramicroscopy, Elsevier vol. 26 (1-2), 13-23. 01-01-1988
Huxford NP, Eaglesham DJ and Humphreys CJ (1988). Erratum: Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7superconductors. Nature, Springer Nature vol. 331 (6153), 286-286. 01-01-1988
Eaglesham DJ, Kvam EP, Maher DM, Humphreys CJ and Bean JC (1988). Dislocation Nucleation in GeSi/Si(100) Strained Epilayers. MRS Advances, Springer Nature vol. 138 01-01-1988
1987
Huxford NP, Eaglesham DJ and Humphreys CJ (1987). Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7 superconductors. Nature, Springer Nature vol. 329 (6142), 812-813. 01-10-1987
Eaglesham DJ, Humphreys CJ, Alford NM, Clegg WJ, Harmer MA and Birchall JD (1987). New phases in the superconducting Y:Ba:Cu:O system. Applied Physics Letters, AIP Publishing vol. 51 (6), 457-459. 10-08-1987
Eaglesham DJ, Humphreys CJ, Clegg WJ, Harmer MA, AIford NM and Birchall JD (1987). THE ORTHORHOMBIC AND TETRAGONAL PHASES OF Y 1 Ba 2 Cu 3 O 9-y. Advanced Ceramic Materials, Wiley vol. 2 (3B), 662-667. 01-07-1987
Waddington W, Rez P, Grant I and Humphreys C (1987). Erratum: White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals [Phys. Rev. B 34, 1467 (1986)]. Physical Review B, American Physical Society (APS) vol. 35 (10), 5297-5297. 01-04-1987
Maher DM, Fraser HL, Humphreys CJ, Knoell RV and Bean JC (1987). Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction. Applied Physics Letters, AIP Publishing vol. 50 (10), 574-576. 09-03-1987
Berger SD, Salisbury IG, Milne RH, Imeson D and Humphreys CJ (1987). Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiation. Philosophical Magazine B, Taylor & Francis vol. 55 (3), 341-358. 01-03-1987
Heaton BT, Ingallina P, Devenish R, Humphreys CJ, Ceriotti A, Longoni G and Marchionna M (1987). Analytical electron microscopy of [Ni 38 Pt 6 (CO) 48 H] 5–. Chemical Communications, Royal Society of Chemistry (RSC) (10), 765-766. 01-01-1987
Kvam EP, Eaglesham DJ, Maher DM, Humphreys CJ, Bean JC, Green GS and Tanner BK (1987). The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers. MRS Advances, Springer Nature vol. 104 01-01-1987
Humphreys CJ (1987). High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well Structures. Thin Film Growth Techniques for Low-Dimensional Structures 459-469. 01-01-1987
1986
Bullock JF, Titchmarsh JM and Humphreys CJ (1986). STEM/EDX MICOANALYSIS OF COMPOSITIONAL FLUCTUATIONS IN SEMICONDUCTOR MULTI-QUANTUM-WELL STRUCTURES. Semiconductor Science and Technology vol. 1 (6), 342-345. 01-12-1986
Bullock JF, Titchmarsh JM and Humphreys CJ (1986). STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structures. Semiconductor Science and Technology, IOP Publishing vol. 1 (6) 01-12-1986
Waddington WG, Rez P, Grant IP and Humphreys CJ (1986). White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals. Physical Review B, American Physical Society (APS) vol. 34 (3), 1467-1473. 01-08-1986
Petford AK and Humphreys CJ (1986). Electron‐beam damage observed in the fast proton conductor ammonium/hydronium β''‐alumina: a high‐resolution electron microscope (HREM) study. Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials, International Union of Crystallography (IUCr) vol. 42 (3), 224-229. 01-06-1986
Eaglesham DJ, Hetherington CJD and Humphreys CJ (1986). Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged Crystals. MRS Advances, Springer Nature vol. 77 01-01-1986
1985
Bullock JF, Humphreys CJ, Mace AJW, Bishop HE and Titchmarsh JM (1985). CRYSTALLINE EFFECTS IN THE ANALYSIS OF SEMICONDUCTOR MATERIALS USING AUGER ELECTRONS OR X-RAYS. 01-12-1985
Fraser HL, Maher DM, Humphreys CJ, Hetherington CJD, Knoell RV and Bean JC (1985). DETECTION OF LOCAL STRAINS IN STRAINED LAYER SUPERLATTICES. 01-12-1985
Davies RA, Kelly MJ, Kerr TM, Hetherington CJD and Humphreys CJ (1985). Geometric and electronic structure of a semiconductor superlattice. Nature, Springer Nature vol. 317 (6036), 418-419. 01-10-1985
Humphreys CJ (1985). Surface physics: Hopping atoms in crystal growth. Nature, Springer Nature vol. 317 (6032), 16-16. 01-09-1985
Timsit RS, Waddington WG, Humphreys CJ and Hutchison JL (1985). Structure of the Al/Al2O3 interface. Applied Physics Letters, AIP Publishing vol. 46 (9), 830-832. 01-05-1985
Timsit RS, Waddington WG, Humphreys CJ and Hutchison JL (1985). Examination of the Al/Al2O3 interface by high-resolution electron microscopy. Ultramicroscopy, Elsevier vol. 18 (1-4), 387-394. 01-01-1985
1984
Salisbury IG, Timsit RS, Berger SD and Humphreys CJ (1984). Nanometer scale electron beam lithography in inorganic materials. Applied Physics Letters, AIP Publishing vol. 45 (12), 1289-1291. 15-12-1984
Humphreys CJ (1984). MICRO-84: Electron microscopy 50 years on. Nature, Springer Nature vol. 311 (5981), 12-12. 01-09-1984
Cherns D, Hetherington CJD and Humphreys CJ (1984). The atomic structure of the NiSi2-(001)Si interface. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 49 (1), 165-177. 01-07-1984
Humphreys CJ (1984). Crytallography: Defects in reduced oxides. Nature, Springer Nature vol. 309 (5966), 310-310. 01-05-1984
Spence JCH and Humphreys CJ (1984). CHANNELLING RADIATION IN ELECTRON MICROSCOPY. Optik (Jena) vol. 66 (3), 225-242. 01-01-1984
Butler JH, Spence JCH, Reese G, Humphreys CJ and Doole RC (1984). The energy dependence of axial coherent bremsstrahlung at low accelerating voltages. Radiation Effects and Defects in Solids, Taylor & Francis vol. 84 (3-4), 245-256. 01-01-1984
1983
Hull R, Petford AK, Humphreys CJ and Smith DJ (1983). High resolution electron microscopy of silver β- and β″ -aluminas. Solid State Ionics, Elsevier vol. 9, 181-186. 01-12-1983
Humphreys CJ (1983). HIGH VOLTAGE ELECTRON MICROSCOPY - PRESENT ACHIEVEMENTS AND FUTURE PROSPECTS. 01-12-1983
Humphreys CJ and Waddington WG (1983). Dating the Crucifixion. Nature, Springer Nature vol. 306 (5945), 743-746. 01-12-1983
Hetherington CJD, Cherns D and Humphreys CJ (1983). ATOMIC STRUCTURE OF THE NiSi//2/(001) Si INTERFACE. 01-12-1983
Hull R, Smith DJ and Humphreys CJ (1983). A high‐resolution electron microscopic study of defects in sodium β′″‐alumina. Journal of Microscopy, Wiley vol. 130 (2), 203-214. 01-05-1983
Mochel ME, Humphreys CJ, Eades JA, Mochel JM and Petford AM (1983). Electron beam writing on a 20-Å scale in metal β-aluminas. Applied Physics Letters, AIP Publishing vol. 42 (4), 392-394. 15-02-1983
1981
Humphreys CJ (1981). Fundamental concepts of stem imaging. Ultramicroscopy, Elsevier vol. 7 (1), 7-12. 01-01-1981
Humphreys CJ and Spence JCH (1981). RESOLUTION AND ILLUMINATION COHERENCE IN ELECTRON MICROSCOPY. Optik (Jena) vol. 58 (2), 125-142. 01-01-1981
1980
Spencer JP and Humphreys CJ (1980). A multiple scattering transport theory for electron. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 42 (4), 433-451. 01-10-1980
Sellar JR, Imeson D and Humphreys CJ (1980). The critical‐voltage effect in convergent‐beam high‐voltage electron diffraction. Acta Crystallographica Section A: Foundations and advances, International Union of Crystallography (IUCr) vol. 36 (4), 686-696. 01-07-1980
Sellar JR, Imeson D and Humphreys CJ (1980). The combined convergent beam/critical voltage technique in high voltage electron microscopy. Micron (1969), Elsevier vol. 11 (3-4), 241-242. 01-01-1980
1979
Humphreys CJ (1979). The scattering of fast electrons by crystals. Reports on Progress in Physics, IOP Publishing vol. 42 (11) 01-11-1979
Buckley-golder IM and Humphreys CJ (1979). A theoretical study of temperature distributions during Czochralski crystal growth. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 39 (1), 41-57. 01-01-1979
1977
Humphreys CJ, Drummond RA, Hart-davis A and Butler EP (1977). Additional image peaks in the high resolution imaging of dislocations. The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 35 (6), 1543-1555. 01-06-1977
Rez P, Humphreys CJ and Whelan MJ (1977). The distribution of intensity in electron diffraction patterns due to phonon scattering. The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 35 (1), 81-96. 01-01-1977
1976
Rez P, Humphreys CJ and Whelan MJ (1976). DISTRIBUTION OF PHONON SCATTERED ELECTRONS IN HIGH ENERGY ELECTRON DIFFRACTION PATTERNS. 01-01-1976
1974
Sandström R, Spencer JF and Humphreys CJ (1974). A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopy. Journal of Physics D, IOP Publishing vol. 7 (7) 01-05-1974
Spencer JP, Booker GR, Humphreys CJ and Joy DC (1974). ELECTRON CHANNELLING PATTERNS FROM DEFORMED CRYSTALS. 01-01-1974
Humphreys CJ (1974). Recent applications of high voltage electron microscopy in various branches of science. Microscope vol. 22 (2), 129-140. 01-01-1974
1973
Humphreys CJ, Spencer JP, Woolf RJ, Joy DC, Titchmarsh JM, Booker GR, Strojnik A, STickler R, Howell PGT, Boyde A, Brandis EK, Johari O and DeNee PB (1973). SCANNING ELECTRON MICROSCOPY/1972. PROC I: 5TH ANNUAL SCANNING ELECTRON MICROSCOPE SYMPOSIUM, APR 1972; II: WORKSHOP ON BIOLOGICAL SPECIMEN PREPARATION FOR SCANNING ELECTRON MICROSCOPY, APR 1972. 01-01-1973
1972
Spencer JP, Humphreys CJ and Hirsch PB (1972). A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons. The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 26 (1), 193-213. 01-07-1972
Humphreys CJ (1972). The optimum voltage in very high voltage electron microscopy. The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 25 (6), 1459-1472. 01-06-1972
Lally JS, Humphreys CJ, Metherell AJF and Fisher RM (1972). The critical voltage effect in high voltage electron microscopy. The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 25 (2), 321-343. 01-02-1972
1971
Humphreys CJ, Thomas LE, Lally JS and Fisher RM (1971). Maximizing the penetration in high voltage electron microscopy. The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 23 (181), 87-114. 01-01-1971
Humphreys CJ and Fisher RM (1971). Bloch wave notation in many‐beam electron diffraction theory. Acta Crystallographica Section A: Foundations and advances, International Union of Crystallography (IUCr) vol. 27 (1), 42-45. 01-01-1971
1970
Thomas LE and Humphreys CJ (1970). Kikuchi patterns in a high voltage electron microscope. physica status solidi (a) – applications and materials science, Wiley vol. 3 (3), 599-615. 16-11-1970
Tanner BK and Humphreys CJ (1970). High resolution divergent-beam X-ray topography. Journal of Physics D, IOP Publishing vol. 3 (7) 01-07-1970
Humphreys CJ and Lally JS (1970). Aspects of Bloch-Wave Channeling in High-Voltage Electron Microscopy. Journal of Applied Physics, AIP Publishing vol. 41 (1), 232-235. 01-01-1970
Thomas LE, Humphreys CJ, Duff WR and Grubb DT (1970). Radiation damage of polymers in the million volt electron microscope. Radiation Effects and Defects in Solids, Taylor & Francis vol. 3 (1), 89-91. 01-01-1970
1969
Humphreys CJ and Whelan MJ (1969). Inelastic scattering of fast electrons by crystals. The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 20 (163), 165-172. 01-07-1969
1968
Humphreys CJ and Hirsch PB (1968). Absorption parameters in electron diffraction theory. The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 18 (151), 115-122. 01-07-1968
1967
Humphreys CJ, Howie A and Booker GR (1967). Some electron diffraction contrast effects at planar defects in crystals. The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 15 (135), 507-522. 01-03-1967
Grants of specific relevance to the Centre for Sustainable Engineering
HS Barlow Charitable Trust PhD Studentship Contribution (Linked to WT 6767036)Colin Humphreys
£45,000 HS Barlow Charitable Trust (01-01-2022 - 31-12-2024)
Paragraf PhD Studentship Contribution (Linked to WT 6349893)Colin Humphreys
£70,155 Paragraf Paragraf Limited (01-01-2022 - 31-12-2025)
Paragraf support fund - Rajveer Singh Rajaura (PhD Stipend Top-Up & Consumables Only)Colin Humphreys
£33,540 Paragraf Paragraf Limited (01-08-2021 - 31-07-2025)