Professor Sir Colin Humphreys
Professor of Materials Science
School of Engineering and Materials Science
Queen Mary University of London
Queen Mary University of London
Research
Enabling Net Zero, Graphene and 2D electronic devices, Ultra-low-energy consumption semiconductor devices, Atomically thin materials, Next-generation transistors using 2D semiconductors, Advanced electron microscopy
Interests
Large-area graphene and graphene electronic devices. Two-dimensional (2D) materials and 2D electronic devices. Advanced electron microscopy. GaN-based material and devices. Astronomy and ancient historical events.Publications
Publications of specific relevance to the Centre for Sustainable Engineering2024
Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire WafersWeng Z Wingfield B Evans P Baginski P Kainth J Nikolaenko A Lee LY Baginska J et al.
Acs Applied Electronic Materials, American Chemical Society
16-09-2024
2023
Wafer-scale transfer-free graphene as an ITO replacement for OLEDsWeng Z Dixon S Lee LY Humphreys CJ Guiney I Fenwick O Gillin WP
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC). vol. 00, 94-95.
25-10-2023
2022
From John Spence's Postdoc Time in Oxford to my Research on GaN and GrapheneHumphreys C
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 28 (S1), 2736-2737.
01-08-2022
Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of grapheneSun YW Holec D Gehringer D Li L Fenwick O Dunstan DJ Humphreys CJ
Physical Review B, American Physical Society vol. 105 (16)
13-04-2022
Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022)Weng Z Dixon SC Lee LY Humphreys CJ Guiney I Fenwick O Gillin WP
Advanced Optical Materials vol. 10 (3), 2270012-2270012.
05-02-2022
Electron beam damage in titanium dioxide filmsSaifullah MSM Boothroyd CB Botton GA Humphreys CJ
05-01-2022
‘Nano-machining’ using a focused ion beamCampbell LCI Foord DT Humphreys CJ
05-01-2022
Modelling of electron energy-loss spectroscopy detection limitsNatusch MKH Botton GA Humphreys CJ Krivanek OL
05-01-2022
Martensitic transformation and characterisation of the structure of a NiAl - Ni3Al alloyPekarskaya E Botton GA Jones CN Humphreys CJ
05-01-2022
Quantification of the composition of silicon germanium / silicon structures by high-angle annular dark field imagingWalther T Humphreys CJ
05-01-2022
Observation of the mixed dynamic form factor in the Ag M4,5-edgeHölzl M Bottond GA Nelhiebel M Humphreys CJ Jouffrey B Grogger W Hofer F Schattschneider P
05-01-2022
Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materialsSun YW Gehringer D Holec D Papageorgiou DG Fenwick O Qureshi SM Humphreys CJ Dunstan DJ
Physical Review B, American Physical Society vol. 105 (2)
05-01-2022
The relationship between epitaxial growth, defect microstructure and luminescence in GaNTricker DM Brown PD Xin Y Cheng TS Foxon CT Humphreys CJ
In Electron Microscopy and Analysis 1997, Taylor & Francis 429-432.
05-01-2022
2021
Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting DiodesWeng Z Dixon SC Lee LY Humphreys CJ Guiney I Fenwick O Gillin WP
Advanced Optical Materials, Wiley, 2101675-2101675.
20-12-2021
X-ray characterisation of the basal stacking fault densities of (112̄2) GaNPristovsek M Frentrup M Zhu T Kusch G Humphreys CJ
Crystengcomm, Royal Society of Chemistry vol. 23 (35), 6059-6069.
03-08-2021
Mechanical Properties of GrapheneSun YW Papageorgiou D Puech P Proctor JE Machon D Bousige C San-Miguel A Humphreys C et al.
Applied Physics Reviews, Aip Publishing
19-04-2021
Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]Sun YW Holec D Gehringer D Fenwick O Dunstan DJ Humphreys CJ
Physical Review B vol. 103 (11), 119901-119901.
01-03-2021
Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100)Kvam EP Eaglesham DJ Humphreys CJ Maher DM Bean JC Eraser HL
In Microscopy of Semiconducting Materials, 1987, Taylor & Francis 165-168.
31-01-2021
2020
Graphene on silicon: effects of the silicon surface orientation on the work function and carrier density of grapheneSun YW Holec D Gehringer D Li L Fenwick O Dunstan DJ Humphreys CJ
In Arxiv
06-10-2020
Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous CompositesSun Y Passaretti P Hernandez I Gonzalez J Rodriguez F Liu W Dunstan DJ Oppenheimer PG et al.
Scientific Reports, Nature Publishing Group vol. 10
24-09-2020
Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films.Zhang J Guo Q Li X Li C Wu K Abrahams I Yan H Knight MM et al.
Acs Nano, American Chemical Society
27-08-2020
Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal schemeS N Guiney I Humphreys CJ Sen P Muralidharan R Nath DN
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 38 (3)
09-04-2020
Unexpected softness of bilayer graphene and softening of A-A stacked graphene layersSun Y Holec D Gehringer D Fenwick O Dunstan D Humphreys C
Physical Review B: Condensed Matter and Materials Physics, American Physical Society vol. 101
20-03-2020
Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation)Halsall MP Crowe I Oliver R Kappers MJ Humphreys CJ
Gallium Nitride Materials and Devices XV.
10-03-2020
2019
A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate BiasRemesh N Kumar S Guiney I Humphreys CJ Raghavan S Muralidharan R Nath DN
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 217 (7)
29-12-2019
InGaN as a substrate for AC photoelectrochemical imagingZhou B Das A Kappers M Oliver R Humphreys C Krause S
Sensors, Mdpi
11-10-2019
Effect of Size on the Luminescent Efficiency of Perovskite NanocrystalsGriffiths JT Rivarola FWR Davis NJLK Ahumada-Lazo R Alanis JA Parkinson P Binks DJ Fu WY et al.
Acs Applied Energy Materials, American Chemical Society (Acs) vol. 2 (10), 6998-7004.
07-10-2019
3D strain in 2D materials: to what extent is monolayer graphene graphite?Sun YW Liu W Hernandez I Gonzalez J Rodriguez F Dunstan DJ Humphreys C
Physical Review Letters, American Physical Society vol. 123, 135501-135501.
25-09-2019
Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substratesTang F Zhu T Fu W-Y Oehler F Zhang S Griffiths JT Humphreys C Martin TL et al.
Journal of Applied Physics, Aip Publishing vol. 125 (22)
11-06-2019
Optical and structural properties of dislocations in InGaNMassabuau FC-P Horton MK Pearce E Hammersley S Chen P Zielinski MS Weatherley TFK Divitini G et al.
Journal of Applied Physics, Aip Publishing vol. 125 (16)
23-04-2019
Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strengthChristian GM Schulz S Hammersley S Kappers MJ Frentrup M Humphreys CJ Oliver RA Dawson P
Japanese Journal of Applied Physics vol. 58
23-04-2019
Disruption of the $sp^2$ bonding by the compression of the $\pi$-electronic orbitals of graphene at various stacking ordersSun Y Holec D Nöger D Dunstan D Humphreys C
In Arxiv
02-03-2019
3D strain in 2D materials: Experimental test in unsupported monolayer graphene under pressureSun YW Liu W Hernandez I Gonzalez J Rodriguez F Dunstan DJ Humphreys CJ
In Arxiv
07-02-2019
Effect of humidity on the interlayer interaction of bilayer grapheneQadir A Sun YW Liu W Oppenheimer PG Xu Y Humphreys CJ Dunstan DJ
Physical Review B vol. 99 (4)
02-01-2019
2018
Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical ModelRemesh N Mohan N Kumar S Prabhu S Guiney I Humphreys CJ Raghavan S Muralidharan R et al.
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 66 (1), 613-618.
07-12-2018
What is red? On the chromaticity of orange-red InGaN/GaN based LEDsRobin Y Pristovsek M Amano H Oehler F Oliver RA Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 124 (18)
09-11-2018
Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum WellsHalsall MP Crowe IF Mullins J Oliver RA Kappers MJ Humphreys CJ
Acs Photonics, American Chemical Society (Acs) vol. 5 (11), 4437-4446.
17-10-2018
Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densitiesChristian GM Schulz S Kappers MJ Humphreys CJ Oliver RA Dawson P
Physical Review B, American Physical Society (Aps) vol. 98 (15)
01-10-2018
The Effect of Humidity on the Interlayer Interaction of Bi-layer GrapheneQadir A Sun YW Liu W Oppenheimer PG Xu Y Humphreys CJ Dunstan DJ
In Arxiv
25-09-2018
Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum WellsChristian G Kappers M Massabuau F Humphreys C Oliver R Dawson P
Materials, Mdpi vol. 11 (9)
15-09-2018
Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaNLee LY Frentrup M Kappers MJ Oliver RA Humphreys CJ Wallis DJ
Journal of Applied Physics, Aip Publishing vol. 124 (10)
11-09-2018
Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layersChoi FS Griffiths JT Ren C Lee KB Zaidi ZH Houston PA Guiney I Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 124 (5)
03-08-2018
Response to letter from Wayne OsbornHumphreys C Waddington G
Astronomy and Geophysics vol. 59 (4)
01-08-2018
Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDsHumphreys CJ Massabuau FC-P Rhode SL Horton MK O’Hanlon TJ Kovacs A Zielinski MS Kappers MJ et al.
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 24 (S1), 4-5.
01-08-2018
Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTsCho S Li X Guiney I Floros K Hemakumara D Wallis DJ Humphreys C Thayne IG
Electronics Letters, Institution of Engineering and Technology (Iet) vol. 54 (15), 947-949.
01-07-2018
Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTsZaidi ZH Lee KB Roberts JW Guiney I Qian H Jiang S Cheong JS Li P et al.
Journal of Applied Physics, Aip Publishing vol. 123 (18)
14-05-2018
Effect of stacking faults on the photoluminescence spectrum of zincblende GaNChurch SA Hammersley S Mitchell PW Kappers MJ Lee LY Massabuau F Sahonta SL Frentrup M et al.
Journal of Applied Physics, Aip Publishing vol. 123 (18)
10-05-2018
Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structuresBlenkhorn WE Schulz S Tanner DSP Oliver RA Kappers MJ Humphreys CJ Dawson P
Journal of Physics Condensed Matter, Iop Publishing vol. 30 (17)
09-04-2018
Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical propertiesMassabuau FC-P Chen P Rhode SL Horton MK O'Hanlon TJ Kovács A Zielinski MS Kappers MJ et al.
Gallium Nitride Materials and Devices XIII. vol. 10532
23-02-2018
Illuminating theory on early solar eclipseHumphreys C Waddington G
Astronomy and Geophysics vol. 59 (1)
01-02-2018
Moon village: show us the moneyNixon D Humphreys C Waddington G
Astronomy & Geophysics, Oxford University Press (OUP) vol. 59 (1), 1.8-1.8.
01-02-2018
SEM doping contrast at a Si pn junctionElliott SL Broom RF Humphreys CJ
18-01-2018
Energy-loss spectroscopy of GaN alloys and quantum wellsKeast VJ Sharma N Humphreys CJ
18-01-2018
Chemical mapping of InGaN/GaN LEDsSharma N Kappers M Barnard J Vickers M Humphreys C
18-01-2018
Effects of AIN and GaN low-temperature interlayers on the dislocation behaviour of AlGaN and GaN grown by MOCVDMakaronidis G McAleese C Barnard JS Humphreys CJ
10-01-2018
Electrostatic fields in InGaN/GaN single quantum wells and their variation with indium content, using off-axis holography and energy filtered TEMBarnard JS Kappers MJ Thrush EJ Humphreys CJ
10-01-2018
A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEMBarnard JS Vickers ME Kappers MJ Thrush EJ Humphreys CJ
10-01-2018
Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscopeKazemian P Schönjahn C Humphreys CJ
10-01-2018
Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistorsTang F Lee KB Guiney I Frentrup M Barnard JS Divitini G Zaidi ZH Martin TL et al.
Journal of Applied Physics, Aip Publishing vol. 123 (2)
09-01-2018
Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscopeKazemian P Schönjahn C Humphreys CJ
In Microscopy of Semiconducting Materials 2003 593-596.
01-01-2018
2017
The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodesHopkins MA Allsopp DWE Kappers MJ Oliver RA Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 122 (23)
21-12-2017
Degradation of in GaN/GaN Laser Diodes Investigated By Cross-Sectional Electron Beam Induced Current ImagingXiu H Thrush EJ Zhao L Phillips A Humphreys CJ
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)., 38-44.
01-11-2017
Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped BufferKumar S Gupta P Guiney I Humphreys CJ Raghavan S Muralidharan R Nath DN
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 64 (12), 4868-4874.
11-10-2017
Solar eclipse of 1207 BC helps to date pharaohsHumphreys C Waddington G
Astronomy & Geophysics, Oxford University Press (OUP) vol. 58 (5), 5.39-5.42.
01-10-2017
Machine Learning Predicts Laboratory EarthquakesRouet-Leduc B Hulbert C Lubbers N Barros K Humphreys CJ Johnson PA
Geophysical Research Letters vol. 44 (18), 9276-9282.
28-09-2017
X-ray diffraction analysis of cubic zincblende III-nitridesFrentrup M Lee LY Sahonta S-L Kappers MJ Massabuau F Gupta P Oliver RA Humphreys CJ et al.
Journal of Physics D, Iop Publishing vol. 50 (43)
26-09-2017
Ahmed Zewail — A Towering VisionaryHumphreys C
In Personal and Scientific Reminiscences, World Scientific Publishing 137-139.
04-08-2017
Automatized convergence of optoelectronic simulations using active machine learningRouet-Leduc B Hulbert C Barros K Lookman T Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 111 (4)
24-07-2017
Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐ and Ni‐based gate stacksFloros K Li X Guiney I Cho S Hemakumara D Wallis DJ Wasige E Moran DAJ et al.
physica status solidi (a) – applications and materials science. vol. 214 (8)
20-07-2017
Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical PropertiesMassabuau FC-P Rhode SL Horton MK O’Hanlon TJ Kovács A Zielinski MS Kappers MJ Dunin-Borkowski RE et al.
Nano Letters, American Chemical Society (Acs) vol. 17 (8), 4846-4852.
18-07-2017
Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC)Eblabla A Benakaprasad B Li X Wallis DJ Guiney I Humphreys C Elgaid K
2017 18th International Radar Symposium (IRS)., 1-7.
01-06-2017
Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growthMassabuau F Kappers M Humphreys C Oliver R
physica status solidi (b). vol. 254 (8)
22-05-2017
Structural impact on the nanoscale optical properties of InGaN core-shell nanorodsGriffiths JT Ren CX Coulon P-M Le Boulbar ED Bryce CG Girgel I Howkins A Boyd I et al.
Applied Physics Letters, Aip Publishing vol. 110 (17)
24-04-2017
Photoluminescence studies of cubic GaN epilayersChurch SA Hammersley S Mitchell PW Kappers MJ Sahonta SL Frentrup M Nilsson D Ward PJ et al.
physica status solidi (b). vol. 254 (8)
21-02-2017
Machine Learning Predicts Laboratory EarthquakesRouet-Leduc B Hulbert C Lubbers N Barros K Humphreys C Johnson PA
In Arxiv
19-02-2017
All-GaN-Integrated Cascode Heterojunction Field Effect TransistorsJiang S Lee KB Guiney I Miaja PF Zaidi ZH Qian H Wallis DJ Forsyth AJ et al.
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers (IEEE) vol. 32 (11), 8743-8750.
17-02-2017
Single-step manufacturing process for the production of graphene-V/III LED heterostructuresGuiney I Thomas S Humphreys CJ
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI. vol. 10124
16-02-2017
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problemHumphreys CJ Griffiths JT Tang F Oehler F Findlay SD Zheng C Etheridge J Martin TL et al.
Ultramicroscopy, Elsevier vol. 176, 93-98.
03-02-2017
Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowthQian H Lee KB Vajargah SH Novikov SV Guiney I Zaidi ZH Jiang S Wallis DJ et al.
Journal of Crystal Growth, Elsevier vol. 459, 185-188.
01-02-2017
Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)Kim J-Y Ionescu A Mansell R Farrer I Oehler F Kinane CJ Cooper JFK Steinke N-J et al.
Journal of Applied Physics, Aip Publishing vol. 121 (4)
24-01-2017
Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell StructureCoulon P-M Vajargah SH Bao A Edwards PR Le Boulbar ED Girgel I Martin RW Humphreys CJ et al.
Crystal Growth & Design, American Chemical Society (Acs) vol. 17 (2), 474-482.
11-01-2017
X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interfaceMassabuau F Piot N Frentrup M Wang X Avenas Q Kappers M Humphreys C Oliver R
physica status solidi (b). vol. 254 (8)
06-01-2017
Carrier localization in the vicinity of dislocations in InGaNMassabuau FC-P Chen P Horton MK Rhode SL Ren CX O'Hanlon TJ Kovács A Kappers MJ et al.
Journal of Applied Physics, Aip Publishing vol. 121 (1)
03-01-2017
Preventing cracking in the growth of low-cost GaN LEDs on large-area SiHumphreys CJ
Icf 2017 14th International Conference on Fracture. vol. 2, 1280-1282.
01-01-2017
Perspectives on Electronic and Photonic MaterialsSmeeton T Humphreys C
In Springer Handbook of Electronic and Photonic Materials, Springer Nature 1-1.
01-01-2017
2016
Impact of high energy electrons on nitrides for nanocathodoluminescenceGriffiths J Zhang S Lhuillier J Zhu D Wallis D Howkins A Boyd I Stowe D et al.
In European Microscopy Congress 2016: Proceedings, Wiley 1044-1045.
20-12-2016
Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon dopingGriffiths J Zhang S Rouet‐Leduc B Fu WY Zhu D Wallis D Howkins A Boyd I et al.
In European Microscopy Congress 2016: Proceedings, Wiley 562-563.
20-12-2016
Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescenceZhu T Gachet D Tang F Fu WY Oehler F Kappers MJ Dawson P Humphreys CJ et al.
Applied Physics Letters, Aip Publishing vol. 109 (23)
05-12-2016
Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma sourceNovikov SV Staddon CR Sahonta S-L Oliver RA Humphreys CJ Foxon CT
Journal of Crystal Growth, Elsevier vol. 456, 151-154.
01-12-2016
Dielectric response of wurtzite gallium nitride in the terahertz frequency rangeHibberd MT Frey V Spencer BF Mitchell PW Dawson P Kappers MJ Oliver RA Humphreys CJ et al.
Solid State Communications, Elsevier vol. 247, 68-71.
01-12-2016
Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wellsSchulz S Tanner DSP O'Reilly EP A. M Tang F Griffiths JT Oehler F Kappers MJ et al.
Applied Physics Letters, Aip Publishing vol. 109 (22)
28-11-2016
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substratesKundys D Sutherland D Davies M Oehler F Griffiths J Dawson P Kappers MJ Humphreys CJ et al.
In Arxiv
11-11-2016
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates.Kundys D Sutherland D Davies MJ Oehler F Griffiths J Dawson P Kappers MJ Humphreys CJ et al.
Sci Technol Adv Mater vol. 17 (1), 736-743.
10-11-2016
Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage thresholdGriffiths JT Zhang S Lhuillier J Zhu D Fu WY Howkins A Boyd I Stowe D et al.
Journal of Applied Physics, Aip Publishing vol. 120 (16)
28-10-2016
Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMICBenakaprasad B Eblabla A Li X Elgaid K Wallis DJ Guiney I Humphreys C
2016 46th European Microwave Conference (EuMC)., 413-416.
01-10-2016
Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescenceHocker M Maier P Jerg L Tischer I Neusser G Kranz C Pristovsek M Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 120 (8)
23-08-2016
High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layerMuhammed MM Roldan MA Yamashita Y Sahonta S-L Ajia IA Iizuka K Kuramata A Humphreys CJ et al.
Scientific Reports, Springer Nature vol. 6 (1)
14-07-2016
Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)Pristovsek M Han Y Zhu T Oehler F Tang F Oliver RA Humphreys CJ Tytko D et al.
Semiconductor Science and Technology, Iop Publishing vol. 31 (8)
12-07-2016
Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodesPresa S Maaskant PP Kappers MJ Humphreys CJ Corbett B
Aip Advances, Aip Publishing vol. 6 (7)
01-07-2016
Comparative studies of efficiency droop in polar and non-polar InGaN quantum wellsDavies MJ Dawson P Hammersley S Zhu T Kappers MJ Humphreys CJ Oliver RA
Applied Physics Letters, Aip Publishing vol. 108 (25)
20-06-2016
Scalable semipolar gallium nitride templates for high-speed LEDsCorbett B Lymperakis L Scholz F Humphreys C Brunner F Meyer T
Spie Newsroom, Spie, The International Society For Optics and Photonics
03-06-2016
Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling techniqueSpencer BF Smith WF Hibberd MT Dawson P Beck M Bartels A Guiney I Humphreys CJ et al.
Applied Physics Letters, Aip Publishing vol. 108 (21)
23-05-2016
The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wellsDawson P Schulz S Oliver RA Kappers MJ Humphreys CJ
Journal of Applied Physics vol. 119 (18)
14-05-2016
Characterization of p-GaN1−x As x /n-GaN PN junction diodesQian H Lee KB Vajargah SH Novikov SV Guiney I Zhang S Zaidi ZH Jiang S et al.
Semiconductor Science and Technology, Iop Publishing vol. 31 (6)
12-05-2016
The microstructure of non-polar a-plane (11 2 ¯0) InGaN quantum wellsGriffiths JT Oehler F Tang F Zhang S Fu WY Zhu T Findlay SD Zheng C et al.
Journal of Applied Physics, Aip Publishing vol. 119 (17)
02-05-2016
Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016)Han Y Caliebe M Hage F Ramasse Q Pristovsek M Zhu T Scholz F Humphreys C
Physica Status Solidi (B), Wiley vol. 253 (5), 1024-1024.
01-05-2016
Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learningRouet-Leduc B Barros K Lookman T Humphreys CJ
Scientific Reports, Springer Nature vol. 6 (1)
26-04-2016
Comparative study of (0001) and InGaN based light emitting diodesPristovsek M Humphreys CJ Bauer S Knab M Thonke K Kozlowski G O’Mahony D Maaskant P et al.
Japanese Journal of Applied Physics. vol. 55 (5S)
15-04-2016
Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structuresHammersley S Kappers MJ Massabuau FC Sahonta S Dawson P Oliver RA Humphreys CJ
Physica Status Solidi (C)
14-04-2016
Impact of Buffer Charge on the Reliability of Carbon Doped AIGaN/GaN-on-Si HEMTsChatterjee I Uren MJ Pooth A Karboyan S Martin-Horcajo S Kuball M Lee KB Zaidi Z et al.
2016 IEEE International Reliability Physics Symposium (IRPS).
01-04-2016
Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates.Caliebe M Tandukar S Cheng Z Hocker M Han Y Meisch T Heinz D Huber F et al.
Journal of Crystal Growth, Elsevier vol. 440, 69-75.
01-04-2016
Subthreshold Mobility in AlGaN/GaN HEMTsWaller WM Uren MJ Lee KB Houston PA Wallis DJ Guiney I Humphreys CJ Pandey S et al.
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 63 (5), 1861-1865.
30-03-2016
Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell NanorodsLe Boulbar ED Edwards PR Vajargah SH Griffiths I Gîrgel I Coulon P-M Cherns D Martin RW et al.
Crystal Growth & Design, American Chemical Society (Acs) vol. 16 (4), 1907-1916.
23-03-2016
Dislocation core structures in (0001) InGaNRhode SL Horton MK Sahonta S-L Kappers MJ Haigh SJ Pennycook TJ McAleese C Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 119 (10)
09-03-2016
Development of semipolar (11-22) LEDs on GaN templatesCorbett B Quan Z Dinh DV Kozlowski G O'Mahony D Akhter M Schulz S Parbrook P et al.
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX. vol. 9768
08-03-2016
Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodesGîrgel I Edwards PR Le Boulbar E Coulon P-M Sahonta S-L Allsopp DWE Martin RW Humphreys CJ et al.
Journal of Nanophotonics. vol. 10 (1), 016010-016010.
07-03-2016
Molecular beam epitaxy of free‐standing bulk wurtzite AlxGa1‐xN layers using a highly efficient RF plasma sourceNovikov SV Staddon CR Sahonta S Oliver RA Humphreys CJ Foxon CT
physica status solidi (c). vol. 13 (5‐6), 217-220.
25-02-2016
Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDsHammersley S Dawson P Kappers MJ Massabuau FC Frentrup M Oliver RA Humphreys CJ
physica status solidi (c). vol. 13 (5‐6), 262-265.
17-02-2016
Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectricsRoberts JW Chalker PR Lee KB Houston PA Cho SJ Thayne IG Guiney I Wallis D et al.
Applied Physics Letters, Aip Publishing vol. 108 (7)
15-02-2016
A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayersDavies MJ Hammersley S Massabuau FC-P Dawson P Oliver RA Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 119 (5)
05-02-2016
Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structuresHammersley S Kappers MJ Massabuau FC Sahonta S Dawson P Oliver RA Humphreys CJ
physica status solidi (c). vol. 13 (5‐6), 209-213.
03-02-2016
Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time‐resolved terahertz and photoluminescence spectroscopyDunn A Spencer BF Hardman SJO Graham DM Hammersley S Davies MJ Dawson P Kappers MJ et al.
physica status solidi (c). vol. 13 (5‐6), 252-255.
03-02-2016
Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wellsChristian GM Hammersley S Davies MJ Dawson P Kappers MJ Massabuau FC Oliver RA Humphreys CJ
physica status solidi (c). vol. 13 (5‐6), 248-251.
27-01-2016
Origins of hillock defects on GaN templates grown on Si(111)Han Y Zhu D Zhu T Humphreys CJ Wallis DJ
Journal of Crystal Growth, Elsevier vol. 434, 123-127.
01-01-2016
n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by siliconKakanakova-Georgieva A Sahonta S-L Nilsson D Trinh XT Son NT Janzén E Humphreys CJ
Journal of Materials Chemistry C, Royal Society of Chemistry (Rsc) vol. 4 (35), 8291-8296.
01-01-2016
Terahertz Magnetospectroscopy Studies of an AlGaN/GaN HeterostructureSpencer BF Hibberd MT Smith WF Dawson P Beck M Bartels A Guiney I Humphreys CJ et al.
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)., 1-2.
01-01-2016
Solid-State Lighting Based on Light Emitting Diode TechnologyZhu D Humphreys CJ
In Optics in Our Time, Springer Nature 87-118.
01-01-2016
Modelling the Closely-Coupled Cascode Switching ProcessMiaja PF Jiang S Lee KB Guiney I Wallis DJ Humphreys CJ Houston PA Forsyth AJ
2016 IEEE Energy Conversion Congress and Exposition (ECCE)., 1-8.
01-01-2016
Transfer printed multi-color integrated devices for visible light communication applicationsRae K Xie E Foucher C Guilhabert B Ferriera R Zhu D Wallis DJ Humphreys CJ et al.
Light, Energy and the Environment.
01-01-2016
Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology on GaN-on-Low Resistivity Silicon SubstratesBenakaprasad B Eblabla A Li X Thayne I Wallis DJ Guiney I Humphreys C Elgaid K
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)., 1-2.
01-01-2016
Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructureSpencer BF Hibberd MT Smith WF Dawson P Beck M Bartels A Guiney I Humphreys CJ et al.
Conference on Lasers and Electro-Optics.
01-01-2016
2015
Dislocation core structures in Si-doped GaNRhode SL Horton MK Fu WY Sahonta S-L Kappers MJ Pennycook TJ Humphreys CJ Dusane RO et al.
Applied Physics Letters, Aip Publishing vol. 107 (24)
14-12-2015
Toward defect‐free semi‐polar GaN templates on pre‐structured sapphireHan Y Caliebe M Hage F Ramasse Q Pristovsek M Zhu T Scholz F Humphreys C
Physica Status Solidi (B), Wiley vol. 253 (5), 834-839.
12-12-2015
Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theorySchulz S Tanner DP O'Reilly EP A. M Martin TL Bagot PAJ Moody MP Tang F et al.
Physical Review B, American Physical Society (Aps) vol. 92 (23)
01-12-2015
Difference in linear polarization of biaxially strained InxGa1−xN alloys on nonpolar a-plane and m-plane GaNZhang S Cui Y Griffiths JT Fu WY Freysoldt C Neugebauer J Humphreys CJ Oliver RA
Physical Review B, American Physical Society (Aps) vol. 92 (24)
01-12-2015
A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitorCho SJ Roberts JW Guiney I Li X Ternent G Floros K Humphreys CJ Chalker PR et al.
Microelectronic Engineering. vol. 147, 277-280.
01-11-2015
Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si DopingGriffiths JT Zhang S Rouet-Leduc B Fu WY Bao A Zhu D Wallis DJ Howkins A et al.
Nano Letters, American Chemical Society (Acs) vol. 15 (11), 7639-7643.
22-10-2015
Integrated Dual-Color Ingan Light-Emitting Diode Array Through Transfer PrintingRae K Xie EY Trindade AJ Guilhabert B Ferreira R McKendry JJD Zhu D Laurand N et al.
2015 IEEE Photonics Conference (IPC)., 390-391.
01-10-2015
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodesMeneghini M Zhu D Humphreys CJ Berti M Gasparotto A Cesca T Vinattieri A Bogani F et al.
Aip Advances, Aip Publishing vol. 5 (10)
01-10-2015
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regionsHammersley S Kappers MJ Massabuau FC-P Sahonta S-L Dawson P Oliver RA Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 107 (13)
28-09-2015
Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theorySchulz S Tanner DP O'Reilly EP Caro MA Martin TL Bagot PAJ Moody MP Tang F et al.
In Arxiv
23-09-2015
Optimizing GaN () hetero‐epitaxial templates grown on () sapphirePristovsek M Frentrup M Han Y Humphreys CJ
Physica Status Solidi (B), Wiley vol. 253 (1), 61-66.
31-08-2015
Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implantZaidi ZH Lee KB Guiney I Qian H Jiang S Wallis DJ Humphreys CJ Houston PA
Semiconductor Science and Technology, Iop Publishing vol. 30 (10)
18-08-2015
Growth and coalescence studies of oriented GaN on pre‐structured sapphire substrates using marker layersCaliebe M Han Y Hocker M Meisch T Humphreys C Thonke K Scholz F
Physica Status Solidi (B), Wiley vol. 253 (1), 46-53.
14-08-2015
Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTsWaller WM Karboyan S Uren MJ Lee KB Houston PA Wallis DJ Guiney I Humphreys CJ et al.
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 62 (8), 2464-2469.
07-07-2015
Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printingTrindade AJ Guilhabert B Xie EY Ferreira R McKendry JJD Zhu D Laurand N Gu E et al.
Optics Express, Optica Publishing Group vol. 23 (7), 9329-9338.
02-04-2015
Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphireHan Y Caliebe M Kappers M Scholz F Pristovsek M Humphreys C
Journal of Crystal Growth, Elsevier vol. 415, 170-175.
01-04-2015
Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodesWallace MJ Edwards PR Kappers MJ Hopkins MA Oehler F Sivaraya S Oliver RA Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 117 (11)
21-03-2015
SCM and SIMS investigations of unintentional doping in III‐nitridesKappers MJ Zhu T Sahonta S Humphreys CJ Oliver RA
physica status solidi (c). vol. 12 (4-5), 403-407.
18-03-2015
Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 VLee KB Guiney I Jiang S Zaidi ZH Qian H Wallis DJ Uren MJ Kuball M et al.
Applied Physics Express, Iop Publishing vol. 8 (3)
19-02-2015
Segregation of In to Dislocations in InGaNHorton MK Rhode S Sahonta S-L Kappers MJ Haigh SJ Pennycook TJ Humphreys CJ Dusane RO et al.
Nano Letters, American Chemical Society (Acs) vol. 15 (2), 923-930.
21-01-2015
Optical studies of non‐polar m‐plane () InGaN/GaN multi‐quantum wells grown on freestanding bulk GaNSutherland D Zhu T Griffiths JT Tang F Dawson P Kundys D Oehler F Kappers MJ et al.
physica status solidi (b). vol. 252 (5), 965-970.
20-01-2015
2014
Carrier distributions in InGaN/GaN light‐emitting diodesHammersley S Davies MJ Dawson P Oliver RA Kappers MJ Humphreys CJ
Physica Status Solidi (B), Wiley vol. 252 (5), 890-894.
29-12-2014
Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistorsZaidi ZH Lee KB Guiney I Qian H Jiang S Wallis DJ Humphreys CJ Houston PA
Journal of Applied Physics, Aip Publishing vol. 116 (24)
22-12-2014
Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structuresMassabuau FC Davies MJ Blenkhorn WE Hammersley S Kappers MJ Humphreys CJ Dawson P Oliver RA
Physica Status Solidi (B), Wiley vol. 252 (5), 928-935.
19-12-2014
Low defect large area semi‐polar (112) GaN grown on patterned (113) siliconPristovsek M Han Y Zhu T Frentrup M Kappers MJ Humphreys CJ Kozlowski G Maaskant P et al.
physica status solidi (b). vol. 252 (5), 1104-1108.
05-12-2014
Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature methodGriffiths JT Zhu T Oehler F Emery RM Fu WY Reid BPL Taylor RA Kappers MJ et al.
Apl Materials, Aip Publishing vol. 2 (12)
01-12-2014
Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPEOehler F Sutherland D Zhu T Emery R Badcock TJ Kappers MJ Humphreys CJ Dawson P et al.
Journal of Crystal Growth, Elsevier vol. 408, 32-41.
01-12-2014
A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structuresDavies MJ Dawson P Massabuau FC Le Fol A Oliver RA Kappers MJ Humphreys CJ
Physica Status Solidi (B), Wiley vol. 252 (5), 866-872.
14-11-2014
Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxyDinh DV Oehler F Zubialevich VZ Kappers MJ Alam SN Caliebe M Scholtz F Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 116 (15)
16-10-2014
Capillary-Bonding of Thin LEDs onto Non-Native Substrates by Transfer-PrintingTrindade AJ Guilhabert B Zhu D Laurand N Gu E Watson IM Humphreys CJ Wallis DJ et al.
2014 IEEE Photonics Conference., 504-505.
01-10-2014
Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium NitrideLozano JG Yang H Guerrero-Lebrero MP D'Alfonso AJ Yasuhara A Okunishi E Zhang S Humphreys CJ et al.
Physical Review Letters, American Physical Society (Aps) vol. 113 (13)
24-09-2014
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problemMassabuau FC-P Davies MJ Oehler F Pamenter SK Thrush EJ Kappers MJ Kovács A Williams T et al.
Applied Physics Letters, Aip Publishing vol. 105 (11)
15-09-2014
Structure and strain relaxation effects of defects in InxGa1−xN epilayersRhode SL Fu WY Moram MA Massabuau FC-P Kappers MJ McAleese C Oehler F Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 116 (10)
10-09-2014
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structuresDavies MJ Dawson P Massabuau FC-P Oliver RA Kappers MJ Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 105 (9)
01-09-2014
Electron Channeling Contrast Imaging of Defects in III-Nitride SemiconductorsTrager-Cowan C Naresh-Kumar G Allehiani N Kraeusel S Hourahine B Vespucci S Thomson D Bruckbauer J et al.
Microscopy and Microanalysis. vol. 20 (S3), 1024-1025.
01-08-2014
How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World's Energy ProblemsHumphreys C
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 20 (S3), xcvii-c.
01-08-2014
How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy ProblemsHumphreys C Ford BJ
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 20 (S2), 11-14.
29-07-2014
Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diodeWallace MJ Edwards PR Kappers MJ Hopkins MA Oehler F Sivaraya S Allsopp DWE Oliver RA et al.
Journal of Applied Physics, Aip Publishing vol. 116 (3)
18-07-2014
Investigation of the GaN-on-GaAs interface for vertical power device applicationsMöreke J Uren MJ Novikov SV Foxon CT Vajargah SH Wallis DJ Humphreys CJ Haigh SJ et al.
Journal of Applied Physics, Aip Publishing vol. 116 (1)
03-07-2014
A dissociation mechanism for the [a+c] dislocation in GaNNellist PD Hirsch PB Rhode S Horton MK Lozano JG Yasuhara A Okunishi E Zhang S et al.
Journal of Physics Conference Series. vol. 522 (1)
11-06-2014
Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEMLozano JG Guerrero-Lebrero MP Yasuhara A Okinishi E Zhang S Humphreys CJ Galindo PL Hirsch PB et al.
Journal of Physics Conference Series. vol. 522 (1)
11-06-2014
PANIC: a 3D dislocation dynamics model for climb and glide in epitaxial films and heterostructuresFu WY Humphreys CJ Moram MA
In Arxiv
03-06-2014
Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issuesCalciati M Goano M Bertazzi F Vallone M Zhou X Ghione G Meneghini M Meneghesso G et al.
Aip Advances, Aip Publishing vol. 4 (6)
01-06-2014
Dislocation-related trap levels in nitride-based light emitting diodesVenturi G Castaldini A Cavallini A Meneghini M Zanoni E Zhu D Humphreys C
Applied Physics Letters, Aip Publishing vol. 104 (21)
26-05-2014
Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphireKundys D Schulz S Oehler F Sutherland D Badcock TJ Dawson P Kappers MJ Oliver RA et al.
Journal of Applied Physics, Aip Publishing vol. 115 (11)
21-03-2014
Low temperature carrier redistribution dynamics in InGaN/GaN quantum wellsBadcock TJ Dawson P Davies MJ Kappers MJ Massabuau FC-P Oehler F Oliver RA Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 115 (11)
18-03-2014
Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structuresBruckbauer J Edwards PR Sahonta S-L Massabuau FC-P Kappers MJ Humphreys CJ Oliver RA Martin RW
Journal of Physics D, Iop Publishing vol. 47 (13)
11-03-2014
Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealingVinattieri A Batignani F Bogani F Meneghini M Meneghesso G Zanoni E Zhu D Humphreys CJ
AIP Conference Proceedings. vol. 1583 (1), 282-286.
21-02-2014
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devicesMutta GR Venturi G Castaldini A Cavallini A Meneghini M Zanoni E Meneghesso G Zhu D et al.
AIP Conference Proceedings. vol. 1583 (1), 315-318.
21-02-2014
The impact of growth parameters on trench defects in InGaN/GaN quantum wellsMassabuau FC Le Fol A Pamenter SK Oehler F Kappers MJ Humphreys CJ Oliver RA
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 211 (4), 740-743.
14-02-2014
High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regimeDavies MJ Badcock TJ Dawson P Oliver RA Kappers MJ Humphreys CJ
physica status solidi (c). vol. 11 (3‐4), 694-697.
01-02-2014
An investigation into defect reduction techniques for growth of non‐polar GaN on sapphireSutherland D Oehler F Zhu T Griffiths JT Badcock TJ Dawson P Emery RM Kappers MJ et al.
physica status solidi (c). vol. 11 (3‐4), 541-544.
01-02-2014
Dynamics of carrier redistribution processes in InGaN/GaN quantum well structuresBadcock TJ Dawson P Davies MJ Oliver RA Kappers MJ Humphreys CJ
physica status solidi (c). vol. 11 (3‐4), 738-741.
28-01-2014
Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structuresDavies MJ Massabuau FC Dawson P Oliver RA Kappers MJ Humphreys CJ
physica status solidi (c). vol. 11 (3‐4), 710-713.
28-01-2014
The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wellsDavies MJ Dawson P Massabuau FC Oehler F Oliver RA Kappers MJ Badcock TJ Humphreys CJ
Physica Status Solidi (C), Wiley vol. 11 (3‐4), 750-753.
28-01-2014
Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substratesTian P McKendry JJD Gong Z Zhang S Watson S Zhu D Watson IM Gu E et al.
Journal of Applied Physics, Aip Publishing vol. 115 (3)
21-01-2014
The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature methodMassabuau FC-P Tartan CC Traynier R Blenkhorn WE Kappers MJ Dawson P Humphreys CJ Oliver RA
Journal of Crystal Growth, Elsevier vol. 386, 88-93.
01-01-2014
2013
Elastic constants and critical thicknesses of ScGaN and ScAlNZhang S Fu WY Holec D Humphreys CJ Moram MA
Journal of Applied Physics, Aip Publishing vol. 114 (24)
28-12-2013
Interfacial Structure and Chemistry of GaN on Ge(111)Zhang S Zhang Y Cui Y Freysoldt C Neugebauer J Lieten RR Barnard JS Humphreys CJ
Physical Review Letters, American Physical Society (Aps) vol. 111 (25)
16-12-2013
Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substratesTrindade AJ Guilhabert B Massoubre D Zhu D Laurand N Gu E Watson IM Humphreys CJ et al.
Applied Physics Letters, Aip Publishing vol. 103 (25)
16-12-2013
Towards a better understanding of trench defects in InGaN/GaN quantum wellsMassabuau FC-P Trinh-Xuan L Lodié D Sahonta S-L Rhode S Thrush EJ Oehler F Kappers MJ et al.
Journal of Physics Conference Series. vol. 471 (1)
29-11-2013
Low-cost high-efficiency GaN LED on large-area si substrateZhu D Humphreys CJ
2013 International Conference on Compound Semiconductor Manufacturing Technology Cs Mantech 2013., 269-272.
15-11-2013
Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaNNaresh-Kumar G Bruckbauer J Edwards PR Kraeusel S Hourahine B Martin RW Kappers MJ Moram MA et al.
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 20 (1), 55-60.
12-11-2013
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridgesOehler F Zhu T Rhode S Kappers MJ Humphreys CJ Oliver RA
Journal of Crystal Growth, Elsevier vol. 383, 12-18.
01-11-2013
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitridesZhang S Holec D Fu WY Humphreys CJ Moram MA
Journal of Applied Physics, Aip Publishing vol. 114 (13)
04-10-2013
Prospects of III-nitride optoelectronics grown on SiZhu D Wallis DJ Humphreys CJ
Reports on Progress in Physics, Iop Publishing vol. 76 (10)
01-10-2013
The effect of dislocations on the efficiency of InGaN/GaN solar cellsZhang Y Kappers MJ Zhu D Oehler F Gao F Humphreys CJ
Solar Energy Materials and Solar Cells, Elsevier vol. 117, 279-284.
01-10-2013
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodesOliver RA Massabuau FC-P Kappers MJ Phillips WA Thrush EJ Tartan CC Blenkhorn WE Badcock TJ et al.
Applied Physics Letters, Aip Publishing vol. 103 (14)
30-09-2013
The dissociation of the [a + c] dislocation in GaNHirsch PB Lozano JG Rhode S Horton MK Moram MA Zhang S Kappers MJ Humphreys CJ et al.
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 93 (28-30), 3925-3938.
30-09-2013
Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodesTrindade AJ Massoubre D Guilhabert B Zhu D Laurand N Gu E Watson IM Humphreys CJ et al.
2013 IEEE Photonics Conference. vol. 1, 217-218.
01-09-2013
Measuring the composition of AlGaN layers in GaN based structures grown on 150?mm Si substrates using (2?0?5) reciprocal space mapsWallis DJ Zhu D Oehler F Westwater SP Pujol A Humphreys CJ
Semiconductor Science and Technology, Iop Publishing vol. 28 (9)
21-08-2013
Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based CompoundsOehler F Vickers ME Kappers MJ Humphreys CJ Oliver RA
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
22-07-2013
Mg Doping Affects Dislocation Core Structures in GaNRhode SK Horton MK Kappers MJ Zhang S Humphreys CJ Dusane RO Sahonta S-L Moram MA
Physical Review Letters, American Physical Society (Aps) vol. 111 (2)
09-07-2013
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum WellsMeneghini M Vaccari S Garbujo A Trivellin N Zhu D Humphreys CJ Calciati M Goano M et al.
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
31-05-2013
Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well StructuresBadcock TJ Hammersley S Watson-Parris D Dawson P Godfrey MJ Kappers MJ McAleese C Oliver RA et al.
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
31-05-2013
Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum WellsBadcock TJ Dawson P Oliver RA Kappers MJ Humphreys CJ
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
31-05-2013
Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow ratesTaylor E Fang F Oehler F Edwards PR Kappers MJ Lorenz K Alves E McAleese C et al.
Semiconductor Science and Technology, Iop Publishing vol. 28 (6)
16-05-2013
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitridesZhang S Holec D Fu WY Humphreys CJ Moram MA
In Arxiv
15-03-2013
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsMeneghini M Trivellin N Berti M Cesca T Gasparotto A Vinattieri A Bogani F Zhu D et al.
Gallium Nitride Materials and Devices VIII. vol. 8625
22-02-2013
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wellsMassabuau FC-P Trinh-Xuan L Lodié D Thrush EJ Zhu D Oehler F Zhu T Kappers MJ et al.
Journal of Applied Physics, Aip Publishing vol. 113 (7)
15-02-2013
The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruptionJouvet N Kappers MJ Humphreys CJ Oliver RA
Journal of Applied Physics, Aip Publishing vol. 113 (6)
11-02-2013
High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High RadianceMaaskant PP Shams H Akhter M Henry W Kappers MJ Zhu D Humphreys CJ Corbett B
Applied Physics Express, Iop Publishing vol. 6 (2)
01-02-2013
High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droopDavies MJ Badcock TJ Dawson P Kappers MJ Oliver RA Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 102 (2)
14-01-2013
Characteristics and applications of InGaN micro-light emitting diodes on Si substratesTian P McKendry JJD Gong Z Zhang S Watson S Zhu D Watson IM Gu E et al.
2013 IEEE Photonics Conference., 97-98.
01-01-2013
2012
The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second lawHumphreys CJ
Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 69 (1), 45-50.
05-12-2012
Properties of trench defects in InGaN/GaN quantum well structuresSahonta S Kappers MJ Zhu D Puchtler TJ Zhu T Bennett SE Humphreys CJ Oliver RA
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 210 (1), 195-198.
21-11-2012
Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structuresMassabuau FC-P Sahonta S-L Trinh-Xuan L Rhode S Puchtler TJ Kappers MJ Humphreys CJ Oliver RA
Applied Physics Letters, Aip Publishing vol. 101 (21)
19-11-2012
Low-cost high-efficiency GaN LEDs on 6-inch SiHumphreys C
Solid-State and Organic Lighting, SOLED 2012.
11-11-2012
Characterisation of defects in p-GaN by admittance spectroscopyElsherif OS Vernon-Parry KD Evans-Freeman JH Airey RJ Kappers M Humphreys CJ
Physica B Condensed Matter. vol. 407 (15), 2960-2963.
01-08-2012
Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wellsBadcock TJ Hao R Moram MA Kappers MJ Dawson P Oliver RA Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 112 (1)
01-07-2012
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structuresHammersley S Watson-Parris D Dawson P Godfrey MJ Badcock TJ Kappers MJ McAleese C Oliver RA et al.
Journal of Applied Physics, Aip Publishing vol. 111 (8)
15-04-2012
Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDsMeneghini M Vaccari S Trivellin N Zhu D Humphreys C Butendheich R Leirer C Hahn B et al.
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 59 (5), 1416-1422.
08-03-2012
Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxyBennett SE Smeeton TM Saxey DW Smith GDW Hooper SE Heffernan J Humphreys CJ Oliver RA
Journal of Applied Physics, Aip Publishing vol. 111 (5)
01-03-2012
Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphireBadcock TJ Kappers MJ Moram MA Hao R Dawson P Humphreys CJ
Physica Status Solidi (B), Wiley vol. 249 (3), 494-497.
16-02-2012
Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scatteringVickers ME Hollander JL McAleese C Kappers MJ Moram MA Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 111 (4)
15-02-2012
Measurement of the Al content in AlGaN epitaxial layers by combined energy‐dispersive X‐ray and electron energy‐loss spectroscopy in a transmission electron microscopeAmari H Kappers MJ Humphreys CJ Chèze C Walther T
Physica Status Solidi (C), Wiley vol. 9 (3‐4), 1079-1082.
14-02-2012
Studies of efficiency droop in GaN based LEDsPhillips WA Thrush EJ Zhang Y Humphreys CJ
physica status solidi (c). vol. 9 (3‐4), 765-769.
26-01-2012
Electron holography of an in‐situ biased GaN‐based LEDLiu LZ McAleese C Rao DVS Kappers MJ Humphreys CJ
physica status solidi (c). vol. 9 (3‐4), 704-707.
26-01-2012
On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wellsKappers MJ Badcock TJ Hao R Moram MA Hammersley S Dawson P Humphreys CJ
physica status solidi (c). vol. 9 (3‐4), 465-468.
26-01-2012
Towards predictive modelling of near-edge structures in electron energy loss spectra of AlN based ternary alloysHolec D Rachbauer R Kiener D Cherns PD Costa PMFJ McAleese C Mayrhofer PH Humphreys CJ
In Arxiv
13-01-2012
Structure and chemistry of the Si(111)/AlN interfaceRadtke G Couillard M Botton GA Zhu D Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 100 (1)
02-01-2012
Low-cost high-efficiency GaN LEDs on 6-inch SiHumphreys C
Renewable Energy and the Environment Optics and Photonics Congress.
01-01-2012
Characterization of defects in Mg doped GaN epitaxial layers using conductance measurementsElsherif OS Vernon-Parry KD Dharmadasa IM Evans-Freeman JH Airey RJ Kappers MJ Humphreys CJ
Thin Solid Films, Elsevier vol. 520 (7), 3064-3070.
01-01-2012
2011
Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaNBadcock TJ Kappers MJ Moram MA Dawson P Humphreys CJ
Physica Status Solidi (B), Wiley vol. 249 (3), 498-502.
27-12-2011
Defect reduction processes in heteroepitaxial non-polar a-plane GaN filmsHao R Kappers MJ Moram MA Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 337 (1), 81-86.
01-12-2011
Growth, microstructure and morphology of epitaxial ScGaN filmsKnoll SM Zhang S Joyce TB Kappers MJ Humphreys CJ Moram MA
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 209 (1), 33-40.
24-11-2011
High‐efficiency InGaN/GaN quantum well structures on large area silicon substratesZhu D McAleese C Häberlen M Kappers MJ Hylton N Dawson P Radtke G Couillard M et al.
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 209 (1), 13-16.
21-11-2011
Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron MicroscopeAmari H Lari L Zhang HY Geelhaar L Chèze C Kappers MJ McAleese C Humphreys CJ et al.
Journal of Physics Conference Series. vol. 326 (1)
09-11-2011
Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite AlN and AlxGa1−xNPetrov M Holec D Lymperakis L Neugebauer J Humphreys CJ
Journal of Physics Conference Series. vol. 326 (1)
09-11-2011
Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]Moram MA Kappers MJ Massabuau F Oliver RA Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 110 (9)
01-11-2011
Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) SubstrateZhang Y Fu W-Y Humphreys C Lieten R
Applied Physics Express, Iop Publishing vol. 4 (9)
26-08-2011
The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire SubstratesBadcock TJ Hao R Moram MA Kappers MJ Dawson P Humphreys CJ
Japanese Journal of Applied Physics, Iop Publishing vol. 50 (8R)
01-08-2011
The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r -Plane Sapphire SubstratesBadcock TJ Hao R Moram MA Kappers MJ Dawson P Humphreys CJ
Japanese Journal of Applied Physics, Iop Publishing vol. 50 (8R)
01-08-2011
Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wellsBennett SE Saxey DW Kappers MJ Barnard JS Humphreys CJ Smith GD Oliver RA
Applied Physics Letters, Aip Publishing vol. 99 (2)
11-07-2011
Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structureHammersley S Badcock TJ Watson‐Parris D Godfrey MJ Dawson P Kappers MJ Humphreys CJ
physica status solidi (c). vol. 8 (7‐8), 2194-2196.
20-06-2011
Properties of surface‐pit related emission in a ‐plane InGaN/GaN quantum wells grown on r ‐plane sapphireBadcock TJ Hao R Moram MA Dawson P Kappers MJ Humphreys CJ
physica status solidi (c). vol. 8 (7‐8), 2179-2181.
07-06-2011
Dislocation Climb in c-Plane AlN FilmsFu WY Kappers MJ Zhang Y Humphreys CJ Moram MA
Applied Physics Express, Iop Publishing vol. 4 (6)
01-06-2011
The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substratesBadcock TJ Hao R Moram MA Dawson P Kappers MJ Humphreys CJ
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 208 (7), 1529-1531.
01-06-2011
Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloysHolec D Rachbauer R Kiener D Cherns PD Costa PMFJ McAleese C Mayrhofer PH Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 83 (16)
15-04-2011
The effects of Si doping on dislocation movement and tensile stress in GaN filmsMoram MA Kappers MJ Massabuau F Oliver RA Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 109 (7)
01-04-2011
Carrier localization mechanisms in InxGa1-xN/GaN quantum wellsWatson-Parris D Godfrey MJ Dawson P Oliver RA Galtrey MJ Kappers MJ Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 83 (11)
15-03-2011
LightingZhu D Humphreys CJ
In Fundamentals of Materials For Energy and Environmental Sustainability, Cambridge University Press (Cup) 474-490.
01-01-2011
A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulationsChee AKW Broom RF Humphreys CJ Bosch EGT
Journal of Applied Physics, Aip Publishing vol. 109 (1)
01-01-2011
Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substratesZhu D McAleese C Häberlen M Salcianu C Thrush T Kappers M Phillips A Lane P et al.
Journal of Applied Physics, Aip Publishing vol. 109 (1)
01-01-2011
2010
Dislocation movement in GaN filmsMoram MA Sadler TC Häberlen M Kappers MJ Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 97 (26)
27-12-2010
Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxyRadtke G Couillard M Botton GA Zhu D Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 97 (25)
20-12-2010
Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nmChang TY Moram MA McAleese C Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 108 (12)
15-12-2010
Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlatticeBennett SE Ulfig RM Clifton PH Kappers MJ Barnard JS Humphreys CJ Oliver RA
Ultramicroscopy, Elsevier vol. 111 (3), 207-211.
01-12-2010
The effects of annealing on non-polar (112¯0) a-plane GaN filmsHao R Zhu T Häberlen M Chang TY Kappers MJ Oliver RA Humphreys CJ Moram MA
Journal of Crystal Growth, Elsevier vol. 312 (23), 3536-3543.
01-11-2010
Electronic and optical properties of nonpolar a-plane GaN quantum wellsSchulz S Badcock TJ Moram MA Dawson P Kappers MJ Humphreys CJ O’Reilly EP
Physical Review B, American Physical Society (Aps) vol. 82 (12)
15-09-2010
Microstructural origins of localization in InGaN quantum wellsOliver RA Bennett SE Zhu T Beesley DJ Kappers MJ Saxey DW Cerezo A Humphreys CJ
Journal of Physics D, Iop Publishing vol. 43 (35)
19-08-2010
A Direct Method for Charge Collection Probability Computation Using the Reciprocity TheoremKurniawan O Tan CC Ong VKS Li E Humphreys CJ
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 57 (10), 2455-2461.
09-08-2010
Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowthHäberlen M Badcock TJ Moram MA Hollander JL Kappers MJ Dawson P Humphreys CJ Oliver RA
Journal of Applied Physics, Aip Publishing vol. 108 (3)
01-08-2010
Low dislocation density nonpolar (11‐20) GaN films achieved using scandium nitride interlayersMoram MA Kappers MJ Humphreys CJ
physica status solidi (c). vol. 7 (7‐8), 1778-1780.
01-07-2010
Energy filtered scanning electron microscopy: applications to characterisation of semiconductorsRodenburg C Jepson MAE Inkson BJ Bosch EGT Humphreys CJ
Journal of Physics Conference Series. vol. 241 (1)
01-07-2010
Atom probe extended to AlGaN: three‐dimensional imaging of a Mg‐doped AlGaN/GaN superlatticeBennett SE Clifton PH Ulfig RM Kappers MJ Barnard JS Humphreys CJ Oliver RA
physica status solidi (c). vol. 7 (7‐8), 1781-1783.
01-07-2010
InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelengthZhu D McAleese C Häberlen M Salcianu C Thrush T Kappers M Phillips A Lane P et al.
physica status solidi (c). vol. 7 (7‐8), 2168-2170.
01-07-2010
Energy landscape and carrier wave‐functions in InGaN/GaN quantum wellsWatson‐Parris D Godfrey MJ Oliver RA Dawson P Galtrey MJ Kappers MJ Humphreys CJ
physica status solidi (c). vol. 7 (7‐8), 2255-2258.
01-07-2010
Q‐factor measurements on planar nitride cavitiesCollins DP Holmes MJ Taylor RA Oliver RA Kappers MJ Humphreys CJ
physica status solidi (c). vol. 7 (7‐8), 1866-1868.
01-07-2010
Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a ‐plane GaNBadcock TJ Häberlen M Kappers MJ Moram MA Dawson P Humphreys CJ Oliver RA
physica status solidi (c). vol. 7 (7‐8), 2088-2090.
01-07-2010
Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faultsBadcock TJ Hammersley S Kappers MJ Humphreys CJ Dawson P
physica status solidi (c). vol. 7 (7‐8), 1894-1896.
01-07-2010
Characterising the degree of polarisation anisotropy in an a ‐plane GaN filmBadcock TJ Schulz S Moram MA Kappers MJ Dawson P O'Reilly EP Humphreys CJ
physica status solidi (c). vol. 7 (7‐8), 1897-1899.
01-07-2010
Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well DevicesHumphreys C Oliver R Kappers M Bennett Parris D Dawson P Godfrey M Clifton P et al.
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 16 (S2), 1890-1891.
01-07-2010
Dislocation reduction in GaN grown on Si(111) using a strain‐driven 3D GaN interlayerHäberlen M Zhu D McAleese C Zhu T Kappers MJ Humphreys CJ
physica status solidi (b). vol. 247 (7), 1753-1756.
08-06-2010
Carrier localization mechanisms in InGaN/GaN quantum wellsWatson-Parris D Godfrey MJ Dawson P Oliver RA Galtrey MJ Kappers MJ Humphreys CJ
In Arxiv
07-06-2010
Imaging dislocations in gallium nitride across broad areas using atomic force microscopyBennett SE Holec D Kappers MJ Humphreys CJ Oliver RA
Review of Scientific Instruments, Aip Publishing vol. 81 (6)
01-06-2010
Combined structure-factor phase measurement and theoretical calculations for mapping of chemical bonds in GaNJiang B Zuo JM Holec D Humphreys CJ Spackman M Spence JCH
Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 66 (4), 446-450.
07-05-2010
Progress towards quantitative dopant profiling in the SEMChee KWA Bosch EGT Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1)
01-02-2010
Lattice distortions in GaN thin films on (0001) sapphireRao DVS Beanland R Kappers MJ Zhu D Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1)
01-02-2010
Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layersHaeberlen M Zhu D McAleese C Kappers MJ Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1)
01-02-2010
Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowthOliver RA Bennett SE Sumner J Kappers MJ Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1)
01-02-2010
Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM systemChee KWA Beanland R Midgley PA Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1)
01-02-2010
The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materialsBarnard JS Bennett SE Oliver RA Kappers MJ Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1)
01-02-2010
Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMSBennett SE Clifton PH Ulfig RM Kappers MJ Barnard JS Humphreys CJ Oliver RA
Journal of Physics Conference Series. vol. 209 (1)
01-02-2010
Progress towards site-specific dopant profiling in the scanning electron microscopeJepson MAE Inkson BJ Beanland R Chee AKW Humphreys CJ Rodenburg C
Journal of Physics Conference Series. vol. 209 (1)
01-02-2010
Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatmentAshraf H Rao DVS Gogova D Siche D Fornari R Humphreys CJ Hageman PR
Journal of Crystal Growth, Elsevier vol. 312 (4), 595-600.
01-02-2010
Energy filtered scanning electron microscopy: Applications to dopant contrastRodenburg C Jepson MAE Inkson BJ Bosch E Chee AKW Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1)
01-02-2010
Basal-plane stacking faults in non-polar GaN studied by off-axis electron holographyLiu LZ-Y Rao DVS Kappers MJ Humphreys CJ Geiger D
Journal of Physics Conference Series. vol. 209 (1)
01-02-2010
Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopyMoram MA Johnston CF Kappers MJ Humphreys CJ
Journal of Physics D, Iop Publishing vol. 43 (5)
21-01-2010
Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphireKappers MJ Moram MA Rao DVS McAleese C Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 312 (3), 363-367.
01-01-2010
2009
Cavity Enhancement of Single Quantum Dot Emission in the BlueTaylor RA Jarjour AF Collins DP Holmes MJ Oliver RA Kappers MJ Humphreys CJ
Discover Nano, Springer Nature vol. 5 (3)
27-12-2009
Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxyMoram MA Zhang Y Joyce TB Holec D Chalker PR Mayrhofer PH Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (11)
01-12-2009
Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaNSumner J Oliver RA Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (10)
15-11-2009
The Spatial Distribution of Threading Dislocations in Gallium Nitride FilmsMoram MA Oliver RA Kappers MJ Humphreys CJ
Advanced Materials, Wiley vol. 21 (38‐39), 3941-3944.
16-10-2009
Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodesCharash R Maaskant PP Lewis L McAleese C Kappers MJ Humphreys CJ Corbett B
Applied Physics Letters, Aip Publishing vol. 95 (15)
12-10-2009
On the origin of threading dislocations in GaN filmsMoram MA Ghedia CS Rao DVS Barnard JS Zhang Y Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (7)
01-10-2009
Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy imagesOliver RA Sumner J Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (5)
01-09-2009
Investigating stacking faults in nonpolar gallium nitride films using X-ray diffractionMoram MA Johnston CF Kappers MJ Humphreys CJ
Physica B Condensed Matter, Elsevier vol. 404 (16), 2189-2191.
01-08-2009
Atom Probe Tomography Studies of GaN-Based Semiconductor MaterialsBennett Oliver R Saxey D Cerezo A Clifton P Ulfig R Kappers M Humphreys C
Microscopy and Microanalysis. vol. 15 (S2), 280-281.
01-07-2009
Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxyHertkorn J Thapa SB Wunderer T Scholz F Wu ZH Wei QY Ponce FA Moram MA et al.
Journal of Applied Physics, Aip Publishing vol. 106 (1)
01-07-2009
The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride filmsMoram MA Johnston CF Kappers MJ Humphreys CJ
Journal of Physics D, Iop Publishing vol. 42 (13)
16-06-2009
Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substratesBadcock TJ Dawson P Kappers MJ McAleese C Hollander JL Johnston CF Rao DVS Sanchez AM et al.
Journal of Applied Physics, Aip Publishing vol. 105 (12)
15-06-2009
Lattice distortions in GaN on sapphire using the CBED–HOLZ techniqueRao DVS McLaughlin K Kappers MJ Humphreys CJ
Ultramicroscopy, Elsevier vol. 109 (10), 1250-1255.
12-06-2009
Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayersMoram MA Johnston CF Kappers MJ Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 311 (12), 3239-3242.
01-06-2009
Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphireJohnston CF Kappers MJ Moram MA Hollander JL Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 311 (12), 3295-3299.
01-06-2009
Defect reduction in non‐polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphireJohnston CF Kappers MJ Moram MA Hollander JL Humphreys CJ
physica status solidi (a) – applications and materials science. vol. 206 (6), 1190-1193.
01-06-2009
Understanding x-ray diffraction of nonpolar gallium nitride filmsMoram MA Johnston CF Hollander JL Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 105 (11)
01-06-2009
Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxyTan WS Kauer M Hooper SE Smeeton TM Bousquet V Rossetti M Heffernan J Xiu H et al.
physica status solidi (a) – applications and materials science. vol. 206 (6), 1205-1210.
01-06-2009
Two-photon autocorrelation measurements on a single InGaN/GaN quantum dotCollins D Jarjour A Hadjipanayi M Taylor R Oliver R Kappers M Humphreys C Tahraoui A
Nanotechnology, Iop Publishing vol. 20 (24)
27-05-2009
Optical and microstructural properties of semi‐polar (11‐22) InGaN/GaN quantum well structuresHylton NP Dawson P Johnston CF Kappers MJ Hollander JL McAleese C Humphreys CJ
physica status solidi (c). vol. 6 (S2), s727-s730.
26-05-2009
Optical polarisation anisotropy in a ‐plane GaN/AlGaN multiple quantum well structuresBadcock TJ Dawson P Kappers MJ McAleese C Hollander JL Johnston CF Rao DVS Sanchez AM et al.
physica status solidi (c). vol. 6 (S2), s523-s526.
26-05-2009
Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayersJohnston CF Moram MA Kappers MJ Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 94 (16)
20-04-2009
Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D methodJohnston CF Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 105 (7)
01-04-2009
Non‐linear excitation and correlation studies of single InGaN quantum dotsCollins DP Jarjour AF Taylor RA Hadjipanayi M Oliver RA Kappers MJ Humphreys CJ Tahraoui A
physica status solidi (c). vol. 6 (4), 864-867.
01-04-2009
HANSIS software tool for the automated analysis of HOLZ linesHolec D Rao DVS Humphreys CJ
Ultramicroscopy, Elsevier vol. 109 (7), 837-844.
24-03-2009
Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxyHall JL Moram MA Sanchez A Novikov SV Kent AJ Foxon CT Humphreys CJ Campion RP
Journal of Crystal Growth, Elsevier vol. 311 (7), 2054-2057.
01-03-2009
GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPEZhu D McAleese C McLaughlin KK Häberlen M Salcianu CO Thrush EJ Kappers MJ Phillips WA et al.
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII. vol. 7231
03-02-2009
Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlatticesMoss DM Akimov AV Kent AJ Glavin BA Kappers MJ Hollander JL Moram MA Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 94 (1)
05-01-2009
2008
Equilibrium critical thickness for misfit dislocations in III-nitridesHolec D Zhang Y Rao DVS Kappers MJ McAleese C Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 104 (12)
15-12-2008
Electrically driven single InGaN/GaN quantum dot emissionJarjour AF Taylor RA Oliver RA Kappers MJ Humphreys CJ Tahraoui A
Applied Physics Letters, Aip Publishing vol. 93 (23)
08-12-2008
A theoretical study of ELNES spectra of AlxGa1-xN using Wien2k and Telnes programsHolec D Costa PMFJ Cherns PD Humphreys CJ
Computational Materials Science. vol. 44 (1), 91-96.
01-11-2008
Properties of non-polar a-plane GaN/AlGaN quantum wellsKappers MJ Hollander JL Johnston CF McAleese C Rao DVS Sanchez AM Humphreys CJ Badcock TJ et al.
Journal of Crystal Growth. vol. 310 (23), 4983-4986.
01-11-2008
The effect of oxygen incorporation in sputtered scandium nitride filmsMoram MA Barber ZH Humphreys CJ
Thin Solid Films, Elsevier vol. 516 (23), 8569-8572.
01-10-2008
Optical properties of GaN/AlGaN quantum wells grown on nonpolar substratesBadcock TJ Dawson P Kappers MJ McAleese C Hollander JL Johnston CF Rao DVS Sanchez AM et al.
Applied Physics Letters, Aip Publishing vol. 93 (10)
08-09-2008
Characterisation of non-polar (11-20) gallium nitride using TEM techniquesJohnston CF Kappers MJ Barnard JS Humphreys CJ
Journal of Physics Conference Series. vol. 126 (1)
01-08-2008
High resolution dopant profiling in the SEM, image widths and surface band-bendingChee KWA Rodenburg C Humphreys CJ
Journal of Physics Conference Series. vol. 126 (1)
01-08-2008
Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predoseOliver RA Van der Laak NK Kappers MJ Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 310 (15), 3459-3465.
01-07-2008
Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structuresGaltrey MJ Oliver RA Kappers MJ Humphreys CJ Clifton PH Larson D Saxey DW Cerezo A
Journal of Applied Physics, Aip Publishing vol. 104 (1)
01-07-2008
High Resolution Laplace Deep Level Transient Spectroscopy Studies of Shallow and Deep Levels in n-GaNEmiroglu D Evans-Freeman J Kappers MJ McAleese C Humphreys CJ
2008 Conference on Optoelectronic and Microelectronic Materials and Devices., 30-33.
01-07-2008
High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systemsOliver RA Galtrey MJ Humphreys CJ
Materials Science and Technology, Sage Publications vol. 24 (6), 675-681.
01-06-2008
The effect of wafer curvature on x-ray rocking curves from gallium nitride filmsMoram MA Vickers ME Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 103 (9)
01-05-2008
Morphological study of non‐polar (11‐20) GaN grown on r‐plane (1‐102) sapphireJohnston CF Kappers MJ Barnard JS Humphreys CJ
physica status solidi (c). vol. 5 (6), 1786-1788.
01-05-2008
Assessment of scanning spreading resistance microscopy for application to n‐type GaNSumner J Oliver RA Kappers MJ Humphreys CJ
physica status solidi (c). vol. 5 (6), 1652-1654.
01-05-2008
Palladium‐based on‐wafer electroluminescence studies of GaN‐based LED structuresSalcianu CO Thrush EJ Plumb RG Boyd AR Rockenfeller O Schmitz D Heuken M Humphreys CJ
physica status solidi (c). vol. 5 (6), 2219-2221.
01-05-2008
Gross well‐width fluctuations in InGaN quantum wellsOliver RA Kappers MJ Humphreys CJ
physica status solidi (c). vol. 5 (6), 1475-1481.
01-05-2008
Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayersMoram MA Kappers MJ Zhang Y Barber ZH Humphreys CJ
physica status solidi (a) – applications and materials science. vol. 205 (5), 1064-1066.
01-05-2008
Degradation of III‐nitride laser diodes grown by molecular beam epitaxyXiu H Thrush EJ Kauer M Smeeton TM Hooper SE Heffernan J Humphreys CJ
physica status solidi (c). vol. 5 (6), 2204-2206.
01-05-2008
Structural features in GaN grown on a Ge(111) substrateZhang Y McAleese C Xiu H Humphreys CJ Lieten RR Degroote S Borghs G
physica status solidi (c). vol. 5 (6), 1802-1804.
01-05-2008
Growth of epitaxial thin films of scandium nitride on 100-oriented siliconMoram MA Novikov SV Kent AJ Nörenberg C Foxon CT Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 310 (11), 2746-2750.
01-05-2008
High brightness near‐ultraviolet resonant LEDsCorbett B Zhu D Roycroft B Maaskant P Akhter M McAleese C Kappers MJ Humphreys CJ
physica status solidi (c). vol. 5 (6), 2056-2058.
01-05-2008
Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayerDatta R McAleese C Cherns P Rayment FDG Humphreys CJ
physica status solidi (c). vol. 5 (6), 1743-1745.
01-05-2008
High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n‐type GaNEmiroglu D Evans‐Freeman J Kappers MJ McAleese C Humphreys CJ
physica status solidi (c). vol. 5 (6), 1482-1484.
01-05-2008
Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric fieldJarjour AF Oliver RA Tahraoui A Kappers MJ Taylor RA Humphreys CJ
Superlattices and Microstructures. vol. 43 (5-6), 431-435.
01-05-2008
Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wellsDawson P Hylton NP Kappers MJ McAleese C Humphreys CJ
physica status solidi (c). vol. 5 (6), 2270-2273.
01-05-2008
Unintentional doping in GaN assessed by scanning capacitance microscopySumner J Bakshi SD Oliver RA Kappers MJ Humphreys CJ
physica status solidi (b). vol. 245 (5), 896-898.
28-04-2008
Atom probe reveals the structure of Inx Ga1–x N based quantum wells in three dimensionsGaltrey MJ Oliver RA Kappers MJ McAleese C Zhu D Humphreys CJ Clifton PH Larsen D et al.
physica status solidi (b). vol. 245 (5), 861-867.
28-04-2008
Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappingsRossetti M Smeeton TM Tan W-S Kauer M Hooper SE Heffernan J Xiu H Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 92 (15)
14-04-2008
Solid-State LightingHumphreys CJ
Mrs Bulletin, Springer Nature vol. 33 (4), 459-470.
01-04-2008
Improvements in a-plane GaN crystal quality by a two-step growth processHollander JL Kappers MJ McAleese C Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 92 (10)
10-03-2008
The origin and reduction of dislocations in Gallium NitrideOliver RA Kappers MJ McAleese C Datta R Sumner J Humphreys CJ
Journal of Materials Science: Materials in Electronics. vol. 19 (Suppl 1), 208-214.
05-03-2008
Assessment of the performance of scanning capacitance microscopy for n-type gallium nitrideSumner J Oliver RA Kappers MJ Humphreys CJ
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 26 (2), 611-617.
01-03-2008
Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008)de Sousa Pereira SM Martins MA Trindade T Watson IM Zhu D Humphreys CJ
Advanced Materials, Wiley vol. 20 (5)
29-02-2008
Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructuresde Sousa Pereira SM Martins MA Trindade T Watson IM Zhu D Humphreys CJ
Advanced Materials, Wiley vol. 20 (5), 1038-1043.
08-02-2008
Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon sourceOliver RA Jarjour AF Taylor RA Tahraoui A Zhang Y Kappers MJ Humphreys CJ
Materials Science and Engineering B. vol. 147 (2-3), 108-113.
01-02-2008
Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probeGaltrey MJ Oliver RA Kappers MJ McAleese C Zhu D Humphreys CJ Clifton PH Larson D et al.
Applied Physics Letters, Aip Publishing vol. 92 (4)
28-01-2008
Degradation of GaN-based quantum well light-emitting diodesZhao LX Thrush EJ Humphreys CJ Phillips WA
Journal of Applied Physics, Aip Publishing vol. 103 (2)
15-01-2008
Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaNSumner J Oliver RA Kappers MJ Humphreys CJ
Springer Proceedings in Physics. vol. 120, 463-466.
01-01-2008
Strain Relaxation in an AlGaN/GaN Quantum Well SystemCherns PD McAleese C Kappers MJ Humphreys CJ
Springer Proceedings in Physics. vol. 120, 25-28.
01-01-2008
Quantitative Dopant Profiling in the SEM Including Surface StatesChee KWA Rodenburg C Humphreys CJ
Springer Proceedings in Physics. vol. 120, 407-410.
01-01-2008
An Initial Exploration of GaN Grown on a Ge-(111) SubstrateZhang Y McAleese C Xiu H Humphreys CJ Lieten RR Degroote S Borghs G
Springer Proceedings in Physics. vol. 120, 61-64.
01-01-2008
The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the KeyHumphreys CJ Galtrey MJ Laak NVD Oliver RA Kappers MJ Barnard JS Graham DM Dawson P
Springer Proceedings in Physics. vol. 120, 3-12.
01-01-2008
The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3Ketteniss N Oliver RA McAleese C Kappers MJ Zhang Y Humphreys CJ
Applied Surface Science, Elsevier vol. 254 (7), 2124-2130.
01-01-2008
Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well StructuresGaltrey MJ Oliver RA Kappers MJ Humphreys CJ Stokes DJ Clifton PH Cerezo A
Springer Proceedings in Physics. vol. 120, 161-164.
01-01-2008
EBIC Characterisation of Diffusion and Recombination of Minority Carriers in GaN-Based LEDsMoldovan* G Ong VKS Kurniawan O Kazemian P Edwards PR Humphreys C
Springer Proceedings in Physics. vol. 120, 485-488.
01-01-2008
Compositional and Morphological Variation in GaN/AlN/AlGaN HeterostructuresCherns PD McAleese C Kappers MJ Humphreys CJ
In Emc 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany, Springer Nature 49-50.
01-01-2008
The atomic structure of GaN-based quantum wells and interfacesHumphreys CJ Galtrey MJ Oliver RA Kappers MJ Zhu D McAleese C van der Laak NK Graham DM et al.
In Emc 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany, Springer Nature 41-42.
01-01-2008
2007
Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN SystemsHolec D Humphreys CJ
Materials Science Forum. vol. 567-568, 209-212.
06-12-2007
Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientationsHollander JL Kappers MJ Humphreys CJ
Physica B Condensed Matter. vol. 401, 307-310.
01-12-2007
Interlayer methods for reducing the dislocation density in gallium nitrideKappers MJ Moram MA Zhang Y Vickers ME Barber ZH Humphreys CJ
Physica B Condensed Matter. vol. 401, 296-301.
01-12-2007
Atom probe tomography todayCerezo A Clifton PH Galtrey MJ Humphreys CJ Kelly TF Larson DJ Lozano-Perez S Marquis EA et al.
Materials Today, Elsevier vol. 10 (12), 36-42.
01-12-2007
Deep electronic states associated with a metastable hole trap in n-type GaNEmiroglu D Evans-Freeman JH Kappers MJ McAleese C Humphreys CJ
Physica B Condensed Matter, Elsevier vol. 401, 311-314.
01-12-2007
Advantages and disadvantages of using YAG: Ce nanophosphors encapsulated on blue-emitting LED chips as backlights for displaysWithnall R Silver J Ireland TG Lipman AL Fern GR McAleese C Humphreys C Phillips WA
SID Conference Record of the International Display Research Conference., 179-182.
01-12-2007
Chapter 42Humphreys CJ
In Turning Points in Solid-State, Materials and Surface Science, Royal Society of Chemistry (Rsc) 698-710.
30-11-2007
Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum DotJarjour AF Oliver RA Tahraoui A Kappers MJ Humphreys CJ Taylor RA
Physical Review Letters, American Physical Society (Aps) vol. 99 (19)
09-11-2007
Excitation energy dependence of the photoluminescence spectrum of an InxGa1−xN∕GaN single quantum well structureHylton NP Dawson P Kappers MJ McAleese C Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 76 (20)
05-11-2007
Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structureJiang N Qiu J Humphreys CJ Spence JCH
Micron, Elsevier vol. 39 (6), 698-702.
22-10-2007
Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programsHolec D Costa PMFJ Cherns PD Humphreys CJ
Micron, Elsevier vol. 39 (6), 690-697.
22-10-2007
Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]Galtrey MJ Oliver RA Kappers MJ Humphreys CJ Clifton PH Cerezo A Smith GDW
Applied Physics Letters, Aip Publishing vol. 91 (17)
22-10-2007
Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layerMoram MA Kappers MJ Joyce TB Chalker PR Barber ZH Humphreys CJ
Journal of Crystal Growth vol. 308 (2), 302-308.
15-10-2007
Dislocation reduction in gallium nitride films using scandium nitride interlayersMoram MA Zhang Y Kappers MJ Barber ZH Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 91 (15)
08-10-2007
Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layerMoram MA Kappers MJ Joyce TB Chalker PR Barber ZH Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 308 (2), 302-308.
01-10-2007
Enhanced efficiency of near-UV emitting LEDs for solid state lighting applicationsZhu D Corbett B Roycroft B Maaskant P McAleese C Akhter M Kappers MJ Humphreys CJ
Manufacturing LEDs for Lighting and Displays. vol. 6797
25-09-2007
Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxyZhang Y McAleese C Xiu H Humphreys CJ Lieten RR Degroote B Borghs G
Applied Physics Letters, Aip Publishing vol. 91 (9)
27-08-2007
3D Atom Probe Analysis of Quantum Well and Quantum Dot MaterialsCerezo A Chang L Clifton P Galtrey M Gerstl S Humphreys C Mueller M Oliver R et al.
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 13 (S02), 1608-1609.
01-08-2007
Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dotJarjour AF Taylor RA Oliver RA Kappers MJ Humphreys CJ Tahraoui A
Applied Physics Letters, Aip Publishing vol. 91 (5)
30-07-2007
Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffractionMoram MA Barber ZH Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 102 (2)
15-07-2007
Characterization of InGaN quantum wells with gross fluctuations in widthvan der Laak NK Oliver RA Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 102 (1)
01-07-2007
Practical issues in carrier‐contrast imaging of GaN structuresSumner J Oliver RA Kappers MJ Humphreys CJ
physica status solidi (c). vol. 4 (7), 2576-2580.
01-06-2007
Critical thickness calculations for InGaN/GaNHolec D Costa PMFJ Kappers MJ Humphreys CJ
Journal of Crystal Growth. vol. 303 (1), 314-317.
01-05-2007
Does In form In-rich clusters in InGaN quantum wells?Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 87 (13), 1971-1982.
01-05-2007
Atom probe provides evidence to question InGaN cluster theoryGaltrey M Oliver R Humphreys C
Compound Semiconductor vol. 13 (4), 27-30.
01-05-2007
Resonant Photoluminescence Spectroscopy of InGaN/GaN Single Quantum Well StructuresGraham DM Dawson P Godfrey MJ Kappers MJ Humphreys CJ
AIP Conference Proceedings. vol. 893 (1), 433-434.
10-04-2007
Optically Detected Extended X‐Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum WellsRigopoulos N Hamilton B Davies GJ Towlson BM Poolton NRJ Dawson P Graham DM Kappers MJ et al.
AIP Conference Proceedings. vol. 893 (1), 1503-1504.
10-04-2007
Optical Studies of Non‐linear Absorption in Single InGaN/GaN Quantum DotsJarjour AF Taylor RA Martin RW Watson IM Oliver RA Briggs GAD Kappers MJ Humphreys CJ
AIP Conference Proceedings. vol. 893 (1), 953-954.
10-04-2007
High Photoluminescence Efficiency III‐Nitride Based Quantum Well Structures Emitting at 380 nmGraham DM Dawson P Zhu D Kappers MJ McAleese C Hylton NP Chabrol GR Humphreys CJ
AIP Conference Proceedings. vol. 893 (1), 347-348.
10-04-2007
Materials challenges for devices based on single, self-assembled InGaN quantum dotsOliver RA Jarjour AF Tahraoui A Kappers MJ Taylor RA Humphreys CJ
Journal of Physics Conference Series. vol. 61 (1)
01-04-2007
Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structuresvan der Laak NK Oliver RA Kappers MJ Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 90 (12)
19-03-2007
Anisotropic strain relaxation in a-plane GaN quantum dotsFounta S Coraux J Jalabert D Bougerol C Rol F Mariette H Renevier H Daudin B et al.
Journal of Applied Physics, Aip Publishing vol. 101 (6)
15-03-2007
Growth and characterisation of semi-polar (1l2¯2) InGaN/GaN MQW structuresKappers MJ Hollander JL McAleese C Johnston CF Broom RF Barnard JS Vickers ME Humphreys CJ
Journal of Crystal Growth. vol. 300 (1), 155-159.
01-03-2007
Threading dislocation reduction in (0001) GaN thin films using SiNx interlayersKappers MJ Datta R Oliver RA Rayment FDG Vickers ME Humphreys CJ
Journal of Crystal Growth. vol. 300 (1), 70-74.
01-03-2007
Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clusteringGaltrey MJ Oliver RA Kappers MJ Humphreys CJ Stokes DJ Clifton PH Cerezo A
Applied Physics Letters, Aip Publishing vol. 90 (6)
05-02-2007
Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopyFraser IS Oliver RA Sumner J McAleese C Kappers MJ Humphreys CJ
Applied Surface Science, Elsevier vol. 253 (8), 3937-3944.
01-02-2007
High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nmGraham DM Dawson P Chabrol GR Hylton NP Zhu D Kappers MJ McAleese C Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 101 (3)
01-02-2007
Growth of low dislocation density GaN using transition metal nitride masking layersMoram MA Kappers MJ Barber ZH Humphreys CJ
Journal of Crystal Growth. vol. 298, 268-271.
01-01-2007
Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structuresZhu D Kappers MJ McAleese C Graham DM Chabrol GR Hylton NP Dawson P Thrush EJ et al.
Journal of Crystal Growth. vol. 298, 504-507.
01-01-2007
High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nmGraham DM Dawson P Zhu D Kappers MJ McAleese C Hylton NP Chabro GR Humphreys CJ
PHYSICS OF SEMICONDUCTORS, PTS A AND B. vol. 893, 347-+.
01-01-2007
The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n JunctionsWay Chee AK Rodenburg C Humphreys CJ
Mrs Advances, Springer Nature vol. 1026 (1)
01-01-2007
2006
Study of defects in p-type layers in III-nitride laser diode structures grown by molecular beam epitaxyHuixin X Costa PMFJ Kauer M Smeeton TM Hooper SE Heffernan J Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 955, 46-52.
01-12-2006
A method of accurately determining the positions of the edges of depletion regions in semiconductor junctionsOng VKS Kurniawan O Moldovan G Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 100 (11)
01-12-2006
Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structuresGraham DM Dawson P Godfrey MJ Kappers MJ Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 89 (21)
20-11-2006
Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devicesMoldovan G Kazemian P Edwards PR Ong VKS Kurniawan O Humphreys CJ
Ultramicroscopy, Elsevier vol. 107 (4-5), 382-389.
07-11-2006
Imaging dislocation cores – the way forwardSpence⊥ JCH Kolar HR Hembree G Humphreys CJ Barnard J Datta R Koch C Ross FM et al.
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (29-31), 4781-4796.
11-10-2006
Microstructure of epitaxial scandium nitride films grown on siliconMoram MA Joyce TB Chalker PR Barber ZH Humphreys CJ
Applied Surface Science, Elsevier vol. 252 (24), 8385-8387.
01-10-2006
High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imagingKazemian P Mentink SAM Rodenburg C Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 100 (5)
01-09-2006
Quantitative secondary electron energy filtering in a scanning electron microscope and its applicationsKazemian P Mentink SAM Rodenburg C Humphreys CJ
Ultramicroscopy, Elsevier vol. 107 (2-3), 140-150.
26-07-2006
Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on siliconMoram MA Barber ZH Humphreys CJ Joyce TB Chalker PR
Journal of Applied Physics, Aip Publishing vol. 100 (2)
15-07-2006
Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopyOliver RA Kappers MJ Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 89 (1)
03-07-2006
Mechanisms of bending of threading dislocations in MOVPE‐grown GaN on (0001) sapphireDatta R Humphreys CJ
physica status solidi (c). vol. 3 (6), 1750-1753.
01-06-2006
Three methods for the growth of InGaN nanostructures by MOVPEOliver RA Kappers MJ van der Laak NK Humphreys CJ
physica status solidi (c). vol. 3 (6), 1552-1556.
01-06-2006
Towards a better understanding of nano‐islands formed during atmospheric pressure MOVPEvan der Laak NK Oliver RA Barnard JS Cherns PD Kappers MJ Humphreys CJ
physica status solidi (c). vol. 3 (6), 1544-1547.
01-06-2006
Temperature current‐voltage characterisation of MOCVD grown InGaN/GaN MQW LEDsMoldovan G Phillips A Thrush EJ Humphreys CJ
physica status solidi (c). vol. 3 (6), 2145-2148.
01-06-2006
The effect of Si on the growth mode of GaNvon Pezold J Oliver RA Kappers MJ Bristowe PD Humphreys CJ
physica status solidi (c). vol. 3 (6), 1570-1574.
01-06-2006
The effect of a Mg‐doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structuresGraham DM Dawson P Zhang Y Costa PMFJ Kappers MJ Humphreys CJ Thrush EJ
physica status solidi (c). vol. 3 (6), 2005-2008.
01-06-2006
Resonant photoluminescence excitation studies of InGaN/GaN single quantum wellsGraham DM Dawson P Godfrey MJ Kappers MJ Barnard JS Humphreys CJ Thrush EJ
physica status solidi (c). vol. 3 (6), 2001-2004.
01-06-2006
High quantum efficiency InGaN/GaN structures emitting at 540 nmGraham DM Dawson P Godfrey MJ Kappers MJ Costa PMFJ Vickers ME Datta R Humphreys CJ et al.
physica status solidi (c). vol. 3 (6), 1970-1973.
01-06-2006
Electric fields in AlGaN/GaN quantum well structuresMcAleese C Costa PMFJ Graham DM Xiu H Barnard JS Kappers MJ Dawson P Godfrey MJ et al.
physica status solidi (b). vol. 243 (7), 1551-1559.
01-06-2006
Effects of KOH etching on the properties of Ga-polar n-GaN surfacesMoldovan G Roe MJ Harrison I Kappers M Humphreys CJ Brown PD
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (16), 2315-2327.
01-06-2006
Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimensKazemian P Twitchett AC Humphreys CJ Rodenburg C
Applied Physics Letters, Aip Publishing vol. 88 (21)
22-05-2006
A TEM investigation of crack reduction in AlGaN/GaN heterostructures using an AlN interlayerCherns PD McAleese C Barnard JS Kappers MJ Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 697-702.
15-05-2006
Microstructure and strain-free lattice parameters of ScxGa 1-xN filmsMoram MA Joyce TB Chalker PR Barber ZH Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 723-727.
15-05-2006
Quantum well network structures: Investigating long-range thickness fluctuations in single InGaN/GaN quantum wellsVan Der Laak NK Oliver RA Kappers MJ Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 831-836.
15-05-2006
The mean inner potential of GaN measured from nanowires using off-axis electron holographyWong ASW Ho GW Dunin-Borkowski R Kasama T Oliver RA Costa PMFJ Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 209-214.
15-05-2006
Misfit dislocations in green-emitting InGaN/GaN quantum well structuresCosta PMFJ Datta R Kappers MJ Vickers ME Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 639-643.
15-05-2006
SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocationsOliver RA Kappers MJ Sumner J Datta R Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 631-636.
15-05-2006
Progress in MOVPE growth of crack‐free AlGaN based Bragg reflectors on Si(111)Charles MB Zhang Y Kappers MJ Humphreys CJ
physica status solidi (a) – applications and materials science. vol. 203 (7), 1618-1621.
01-05-2006
A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriersZhu D Kappers MJ Costa PMFJ McAleese C Rayment FDG Chabrol GR Graham DM Dawson P et al.
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 203 (7), 1819-1823.
01-05-2006
Sensitisation of erbium luminescence in erbium-implanted aluminaKenyon AJ Chryssou CE Smeeton TM Humphreys CJ Hole DE
Optical Materials. vol. 28 (6-7), 655-659.
01-05-2006
Misfit dislocations in In‐rich InGaN/GaN quantum well structuresCosta PMFJ Datta R Kappers MJ Vickers ME Humphreys CJ Graham DM Dawson P Godfrey MJ et al.
physica status solidi (a) – applications and materials science. vol. 203 (7), 1729-1732.
01-05-2006
Two-photon absorption from single InGaN/GaN quantum dotsJarjour AF Green AM Parker TJ Taylor RA Oliver RA Briggs GAD Kappers MJ Humphreys CJ et al.
Physica E Low-Dimensional Systems and Nanostructures, Elsevier vol. 32 (1-2), 119-122.
01-05-2006
The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopySmeeton TM Humphreys CJ Barnard JS Kappers MJ
Journal of Materials Science. vol. 41 (9), 2729-2737.
17-04-2006
Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3Oliver RA Kappers MJ Sumner J Datta R Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 289 (2), 506-514.
01-04-2006
SiH4 exposure of GaN surfaces:: A useful tool for highlighting dislocationsOliver RA Kappers MJ Sumner J Datta R Humphreys CJ
GAN, AIN, INN AND RELATED MATERIALS. vol. 892, 631-+.
01-01-2006
Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayersHollander J McAleese C Kappers M Humphreys C
MRS Online Proceedings Library. vol. 955 (1)
01-01-2006
Perspectives on Electronic and Optoelectronic MaterialsSmeeton T Humphreys C
In Springer Handbook of Electronic and Photonic Materials, Springer Nature 3-15.
01-01-2006
Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam EpitaxyXiu H Costa PM Kauer M Smeeton TM Hooper SE Heffernan J Humphreys CJ
Mrs Advances, Springer Nature vol. 955 (1)
01-01-2006
2005
Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wellsvan der Laak NK Oliver RA Kappers MJ Humphreys CJ
Mrs Advances, Springer Nature vol. 892 (1)
01-12-2005
Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN FilmsMoram MA Joyce TB Chalker PR Barber ZH Humphreys CJ
Mrs Advances, Springer Nature vol. 892 (1)
01-12-2005
A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN InterlayerCherns PD McAleese C Barnard JS Kappers MJ Humphreys CJ
Mrs Advances, Springer Nature vol. 892 (1)
01-12-2005
Determination of relative internal quantum efficiency in InGaN∕GaN quantum wellsMartinez CE Stanton NM Kent AJ Graham DM Dawson P Kappers MJ Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 98 (5)
01-09-2005
Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by MOVPEDatta R Kappers MJ Barnard JS Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 831, 405-410.
25-08-2005
Growth of uncracked Al0.80Ga0.20/GaN DBR on Si(111)Charles MB Kappers MJ Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 831, 155-159.
25-08-2005
Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric fieldRobinson JW Rice JH Lee KH Na JH Taylor RA Hasko DG Oliver RA Kappers MJ et al.
Applied Physics Letters, Aip Publishing vol. 86 (21)
16-05-2005
In-plane imperfections in GaN studied by x-ray diffractionVickers ME Kappers MJ Datta R McAleese C Smeeton TM Rayment FDG Humphreys CJ
Journal of Physics D. vol. 38 (10A)
06-05-2005
Science and the Miracles of ExodusHumphreys C
Europhysics News, Edp Sciences vol. 36 (3), 93-96.
01-05-2005
Optical and microstructural studies of InGaN∕GaN single-quantum-well structuresGraham DM Soltani-Vala A Dawson P Godfrey MJ Smeeton TM Barnard JS Kappers MJ Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 97 (10)
29-04-2005
Time-resolved dynamics in single InGaN quantum dots (Invited Paper)Taylor RA Robinson JW Rice JH Lee KH Jarjour A Na JH Yasin S Oliver RA et al.
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX. vol. 5725, 296-308.
13-04-2005
The effect of AlGaN and SiN interlayers on GaN/Si(111)Charles MB Kappers MJ Humphreys CJ
physica status solidi (c). vol. 2 (3), 956-959.
01-02-2005
Reduction of threading dislocation density using in-situ SiNx interlayersDatta R Kappers MJ Barnard JS Humphreys CJ
Springer Proceedings in Physics. vol. 107, 59-62.
01-01-2005
Evolution of InGaN/GaN nanostructures and wetting layers during annealingOliver RA van der Laak NK Kappers MJ Humphreys CJ
Springer Proceedings in Physics. vol. 107, 29-32.
01-01-2005
InGaN-GaN quantum wells: their luminescent and nano-structural propertiesBarnard JS Graham DM Smeeton TM Kappers MJ Dawson P Godfrey M Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS. vol. 107, 25-28.
01-01-2005
Self-catalytic growth of gallium nitride nanoneedles under Garich conditionsWong ASW Ho GW Costa PMFJ Oliver RA Humphreys CJ
Springer Proceedings in Physics. vol. 107, 287-290.
01-01-2005
A TEM Study of A1N Interlayer Defects in AlGaN/GaN HeterostructuresCherns PD McAleese C Kappers MJ Humphreys CJ
Springer Proceedings in Physics. vol. 107, 55-58.
01-01-2005
Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changesvan der Laak NK Oliver RA Kappers MJ McAleese C Humphreys CJ
Springer Proceedings in Physics. vol. 107, 13-16.
01-01-2005
Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMIOfori AP Rossouw CJ Humphreys CJ
Acta Materialia, Elsevier vol. 53 (1), 97-110.
01-01-2005
Simulation of the Quantum-Confined Stark Effect in a Single InGaN Quantum DotLee KH Robinson WJ Rice HJ Na JH Taylor AR Oliver RA Kappers MJ Humphreys CJ
NUSOD '05. Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices, 2005.., 5-6.
01-01-2005
Misfit dislocations in green-emitting InGaN/GaN quantum well structuresCosta P Datta R Kappers M Vickers M Humphreys C
Mrs Advances, Springer Nature vol. 892 (1)
01-01-2005
SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocationsOliver RA Kappers MJ Sumner J Datta R Humphreys CJ
Mrs Advances, Springer Nature vol. 892 (1)
01-01-2005
The mean inner potential of GaN measured from nanowires using off-axis electron holographyWong ASW Ho GW Dunin-Borkowski R Kasama T Oliver RA Costa PMFJ Humphreys CJ
Mrs Advances, Springer Nature vol. 892 (1)
01-01-2005
In GaN-GaN quantum wells: their luminescent and nano-structural propertiesBarnard JS Graham DM Smeeton TM Kappers MJ Dawson P Godfrey M Humphreys CJ
In Microscopy of Semiconducting Materials, Springer Nature 25-28.
01-01-2005
2004
Growth modes in heteroepitaxy of InGaN on GaNOliver RA Kappers MJ Humphreys CJ Briggs GAD
Journal of Applied Physics, Aip Publishing vol. 97 (1)
16-12-2004
Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaNMcAleese C Kappers MJ Rayment FDG Cherns P Humphreys CJ
Journal of Crystal Growth. vol. 272 (1-4), 475-480.
01-12-2004
The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxyOliver RA Kappers MJ Humphreys CJ Briggs GAD
Journal of Crystal Growth. vol. 272 (1-4), 393-399.
01-12-2004
Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted aluminaChryssou CE Kenyon AJ Smeeton TM Humphreys CJ Hole DE
Applied Physics Letters, Aip Publishing vol. 85 (22), 5200-5202.
29-11-2004
Revealing all types of threading dislocations in GaN with improved contrast in a single plan view imageDatta R Kappers MJ Barnard JS Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 85 (16), 3411-3413.
18-10-2004
Growth and characterisation of GaN with reduced dislocation densityDatta R Kappers MJ Vickers ME Barnard JS Humphreys CJ
Superlattices and Microstructures. vol. 36 (4-6), 393-401.
01-10-2004
Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaNYan J Kappers MJ Crossley A McAleese C Phillips WA Humphreys CJ
physica status solidi (b). vol. 241 (12), 2820-2824.
10-09-2004
Photoluminescence Studies of Exciton Recombination and Dephasing in Single Ingan Quantum DotsRice JH Robinson JW Smith JD Jarjour A Taylor RA Oliver RA Briggs GAD Kappers MJ et al.
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers (IEEE) vol. 3 (3), 343-347.
01-09-2004
Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscopeKaestner B Rodenburg C Humphreys CJ
In Arxiv
06-08-2004
Effects of oxygen plasma treatments on the formation of ohmic contacts to GaNYan J Kappers MJ Barber ZH Humphreys CJ
Applied Surface Science. vol. 234 (1-4), 328-332.
01-07-2004
Effect of experimental parameters on doping contrast of Si p–n junctions in a FEG-SEMKazemian P Rodenburg C Humphreys CJ
Microelectronic Engineering. vol. 73, 948-953.
01-06-2004
Temporal variation in photoluminescence from single InGaN quantum dotsRice JH Robinson JW Jarjour A Taylor RA Oliver RA Briggs GAD Kappers MJ Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 84 (20), 4110-4112.
17-05-2004
Can a Materials Scientist Move Mount Sinai?Humphreys C
Mrs Bulletin, Springer Nature vol. 29 (4), 222-223.
01-04-2004
Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contactsMoldovan G Harrison I Humphreys CJ Kappers M Brown PD
Materials Science and Technology, Sage Publications vol. 20 (4), 533-538.
01-04-2004
Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscopeKaestner B Schönjahn C Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 84 (12), 2109-2111.
22-03-2004
Dynamics of single InGaN quantum dotsTaylor RA Robinson JW Rice JH Jarjour A Smith JD Oliver RA Briggs GAD Kappers MJ et al.
Physica E Low-dimensional Systems and Nanostructures. vol. 21 (2-4), 285-289.
01-03-2004
Resonance and current instabilities in AlN/GaN resonant tunnelling diodesBelyaev AE Makarovsky O Walker DJ Eaves L Foxon CT Novikov SV Zhao LX Dykeman RI et al.
Physica E Low-dimensional Systems and Nanostructures. vol. 21 (2-4), 752-755.
01-03-2004
InGaN quantum dots grown by MOVPE via a droplet epitaxy routeRice JH Oliver RA Robinson JW Smith JD Taylor RA Briggs GAD Kappers MJ Humphreys CJ et al.
Physica E Low-dimensional Systems and Nanostructures. vol. 21 (2-4), 546-550.
01-03-2004
Time‐integrated and time‐resolved photoluminescence studies of InGaN quantum dotsRobinson JW Rice JH Jarjour A Smith JD Taylor RA Oliver RA Briggs GAD Kappers MJ et al.
physica status solidi (c). vol. 1 (3), 568-572.
01-02-2004
Electrophoretic manipulation of single DNA molecules in nanofabricated capillariesCampbell LC Wilkinson MJ Manz A Camilleri P Humphreys CJ
Lab on a Chip, Royal Society of Chemistry (Rsc) vol. 4 (3), 225-229.
01-01-2004
A TEM Study of the Effect of Platinum Group Metals in Advanced Single Crystal Nickel-Base SuperalloysOfori AP Humpherys CJ Tin S Jones CN
Superalloys 2004 (Tenth International Symposium)., 787-794.
01-01-2004
Solidification Characteristics of Advanced Nickel-Base Single Crystal SuperalloysHobbs RA Tin S Rae CMF Broomfield RW Humphreys CJ
Superalloys 2004 (Tenth International Symposium)., 819-825.
01-01-2004
Improving Thermal Stability of LiMn2 O 4 Thin Films by In Situ Coating of α MnO2 Using High-Pressure and High-Temperature SputteringChen GS Chen G-S Hsiao HH Louh RF Humphreys CJ
Electrochemical and Solid-State Letters, The Electrochemical Society vol. 7 (8), a235-a238.
01-01-2004
Effect of experimental parameters on doping contrast of Si p-n junctions in a FEG-SEMKazemian P Rodenburg C Humphreys CJ
Microelectronic Engineering. vol. 73-74, 948-953.
01-01-2004
Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by MovpeDatta R Kappers MJ Barnard JS Humphreys CJ
Mrs Advances, Springer Nature vol. 831 (1), 678-683.
01-01-2004
Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111)Charles MB Kappers MJ Humphreys CJ
Mrs Advances, Springer Nature vol. 831 (1), 377-381.
01-01-2004
2003
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscopeSmeeton TM Kappers MJ Barnard JS Vickers ME Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 83 (26), 5419-5421.
29-12-2003
Positron-sensitive vacancy-type centres in the nitrides: 1D-ACAR dataArutyunov NY Emtsev VV Mikhailin AV Humphreys CJ
Physica B Condensed Matter. vol. 340, 412-415.
01-12-2003
Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen annealOliver RA Kappers MJ Rice JH Smith JD Taylor RA Humphreys CJ Briggs GAD
physica status solidi (c). (7), 2515-2519.
24-11-2003
Current–voltage instabilities in GaN/AlGaN resonant tunnelling structuresFoxon CT Novikov SV Belyaev AE Zhao LX Makarovsky O Walker DJ Eaves L Dykeman RI et al.
physica status solidi (c). (7), 2389-2392.
24-11-2003
Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopySmeeton TM Kappers MJ Barnard JS Vickers ME Humphreys CJ
physica status solidi (b). vol. 240 (2), 297-300.
01-11-2003
Exciton localization in InGaN/GaN single quantum well structuresGraham DM Vala AS Dawson P Godfrey MJ Kappers MJ Smeeton TM Barnard JS Humphreys CJ et al.
physica status solidi (b). vol. 240 (2), 344-347.
01-11-2003
Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]Belyaev AE Foxon CT Novikov SV Makarovsky O Eaves L Kappers MJ Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 83 (17), 3626-3627.
27-10-2003
Time-resolved dynamics in single InGaN quantum dotsRobinson JW Rice JH Jarjour A Smith JD Taylor RA Oliver RA Briggs GAD Kappers MJ et al.
Applied Physics Letters, Aip Publishing vol. 83 (13), 2674-2676.
29-09-2003
Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templatesNovikov SV Zhao LX Winser AJ Kappers MJ Barnard JS Harrison I Humphreys CJ Foxon CT
Journal of Crystal Growth, Elsevier vol. 256 (3-4), 237-242.
01-09-2003
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scatteringVickers ME Kappers MJ Smeeton TM Thrush EJ Barnard JS Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 94 (3), 1565-1574.
01-08-2003
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen annealOliver RA Briggs GAD Kappers MJ Humphreys CJ Yasin S Rice JH Smith JD Taylor RA
Applied Physics Letters, Aip Publishing vol. 83 (4), 755-757.
28-07-2003
Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detectorSchönjahn C Broom RF Humphreys CJ Howie A Mentink SAM
Applied Physics Letters, Aip Publishing vol. 83 (2), 293-295.
14-07-2003
Detailed interpretation of electron transport in n-GaNMavroidis C Harris JJ Kappers MJ Humphreys CJ Bougrioua Z
Journal of Applied Physics, Aip Publishing vol. 93 (11), 9095-9103.
01-06-2003
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nmPope IA Smowton PM Blood P Thomson JD Kappers MJ Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 82 (17), 2755-2757.
28-04-2003
Electron energy‐loss near edge structure (ELNES) of InGaN quantum wellsKeast VJ Kappers MJ Humphreys CJ
Journal of Microscopy. vol. 210 (1), 89-93.
01-04-2003
Arsenic incorporation in GaN during growth by molecular beam epitaxyFoxon CT Novikov SV Li T Campion RP Winser AJ Harrison I Kappers MJ Humphreys CJ
Journal of Crystal Growth. vol. 251 (1-4), 510-514.
01-04-2003
GaN/InGaN quantum wells grown in a close coupled showerhead reactorThrush EJ Kappers MJ Dawson P Vickers ME Barnard J Graham D Makaronidis G Rayment FDG et al.
Journal of Crystal Growth. vol. 248, 518-522.
01-02-2003
Analysis of InGaN-GaN quantum well chemistry and interfaces by transmission electron microscopy and X-ray scatteringSmeeton TM Kappers MJ Barnard JS Humphreys CJ
MRS Online Proceedings Library. vol. 798 (1), 524-529.
01-01-2003
2002
Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductorsSchönjahn C Humphreys CJ Glick M
Journal of Applied Physics, Aip Publishing vol. 92 (12), 7667-7671.
15-12-2002
Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]Cho HK Lee JY Sharma N Humphreys CJ Yang GM Kim CS Song JH Yu PW
Applied Physics Letters, Aip Publishing vol. 81 (16), 3102-3103.
14-10-2002
Electronic structure of GaN and InxGa1-xN measured with electron energy-loss spectroscopyKeast VJ Scott AJ Kappers MJ Foxon CT Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 66 (12)
15-09-2002
Energy filtered imaging in a FEG-SEM for enhanced dopant contrastSchönjahn C Humphreys C Glick M
Microscopy and Microanalysis. vol. 8 (S02), 718-719.
01-08-2002
GaN–InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD ReactorThrush EJ Kappers MJ Dawson P Graham D Barnard JS Vickers ME Considine L Mullins JT et al.
physica status solidi (a) – applications and materials science. vol. 192 (2), 354-359.
12-07-2002
Dopant profiling with the scanning electron microscope—A study of SiElliott SL Broom RF Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 91 (11), 9116-9122.
01-06-2002
Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiationChen GS Lee PY Boothroyd CB Humphreys CJ
Journal of Vacuum Science & Technology a Vacuum Surfaces and Films, American Vacuum Society vol. 20 (3), 986-990.
01-05-2002
The magic of materialsHumphreys C
Materials World vol. 10 (6), 20-22.
01-01-2002
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanismsKenyon AJ Chryssou CE Pitt CW Shimizu-Iwayama T Hole DE Sharma N Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 91 (1), 367-374.
01-01-2002
Colin Humphreys - A practical physicist having fun in the world of materialsThomas SM Humphreys C
Materials World vol. 10 (1), 11-11.
01-01-2002
Chapter 2.9.1 Theory of Electron Scattering and Electron DiffractionHumphreys CJ
In Scattering, Elsevier 1287-1303.
01-01-2002
2001
Analysis of contacts and V‐defects in GaN device structures by transmission electron microscopyBright AN Sharma N Humphreys CJ
Microscopy, Oxford University Press (OUP) vol. 50 (6), 489-495.
01-11-2001
Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopyBright AN Humphreys CJ
Philosophical Magazine B, Taylor & Francis vol. 81 (11), 1725-1744.
01-11-2001
Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wellsCho HK Lee JY Sharma N Humphreys CJ Yang GM Kim CS Song JH Yu PW
Applied Physics Letters, Aip Publishing vol. 79 (16), 2594-2596.
15-10-2001
Microstructural characterization of InGaN/GaN multiple quantum wells with high indium compositionCho HK Lee JY Kim CS Yang GM Sharma N Humphreys C
Journal of Crystal Growth, Elsevier vol. 231 (4), 466-473.
01-10-2001
Material optimisation for AlGaN/GaN HFET applicationsBougrioua Z Moerman I Sharma N Wallis RH Cheyns J Jacobs K Thrush EJ Considine L et al.
Journal of Crystal Growth, Elsevier vol. 230 (3-4), 573-578.
01-09-2001
Chemical mapping of InGaN MQWsSharma N Tricker D Thomas P Bougrioua Z Jacobs K Cheyns J Moerman I Thrush T et al.
Journal of Crystal Growth, Elsevier vol. 230 (3-4), 438-441.
01-09-2001
Observation of thermally activated conduction at a GaN–sapphire interfaceMavroidis C Harris JJ Kappers MJ Sharma N Humphreys CJ Thrush EJ
Applied Physics Letters, Aip Publishing vol. 79 (8), 1121-1123.
20-08-2001
Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum WellsKeast VJ Sharma N Kappers M Humphreys CJ
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 7 (S2), 1182-1183.
01-08-2001
Atomic Site Occupancy of Platinum Group Metals in the γ’ (Ll2) Phase of a γ-γ’ Complex Nickel Base Superalloy Using Alchemi (Atomic Location by Channnelling Enhanced Microanalysis)Ofori AP Humphreys CJ
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 7 (S2), 346-347.
01-08-2001
Effects of electron-beam exposure on a ruthenium nanocluster polymerThomas MDR Ahmed H Sanderson KM Shephard DS Johnson BFG Ozkaya D Sharma N Humphreys C
Journal of Applied Physics, Aip Publishing vol. 90 (2), 947-952.
15-07-2001
Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundaryPankhurst DA Botton GA Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 63 (20)
08-05-2001
Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystalsKenyon AJ Chryssou CE Pitt CW Shimizu-Iwayama T Hole DE Sharma N Humphreys CJ
Materials Science and Engineering B, Elsevier vol. 81 (1-3), 19-22.
01-04-2001
Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopyBright AN Thomas PJ Weyland M Tricker DM Humphreys CJ Davies R
Journal of Applied Physics, Aip Publishing vol. 89 (6), 3143-3150.
15-03-2001
A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaNBright AN Tricker DM Humphreys CJ Davies R
Journal of Electronic Materials, Springer Nature vol. 30 (3), l13-l16.
01-03-2001
Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopyBright AN Humphreys CJ
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES. vol. 81 (11), 1725-1744.
01-01-2001
Electronic structure of GaN studied with electron energy loss spectroscopy and density functional theoryKeast VJ Scott AJ Kappers MJ Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 2001. (168), 441-444.
01-01-2001
The chemical and electrical properties of InGaN quantum wells grown with interrupts: A comprehensive TEM case studyBarnard JS Sharma N Cho HK Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 2001. (168), 481-484.
01-01-2001
Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxyTatsuoka H koga T Matsuda K Nose Y Souno Y Kuwabara H Brown PD Humphreys CJ
Thin Solid Films, Elsevier vol. 381 (2), 231-235.
01-01-2001
Microstructural aspects of the early stages of GaN growth by MOCVD.Ramloll CS Bougrioua Z Barnard JS Humphreys CJ Moerman I
ELECTRON MICROSCOPY AND ANALYSIS 2001. (168), 469-472.
01-01-2001
Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wellsSharma N Cho HK Lee JY Humphreys CJ
Mrs Online Proceedings Library, Springer Nature vol. 667 (1)
01-01-2001
2000
Comparative study of sputtered and spin-coatable aluminum oxide electron beam resistsSaifullah MSM Kurihara K Humphreys CJ
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 18 (6), 2737-2744.
01-11-2000
Ultra-high temperature intermetallics for the third millenniumFairbank GB Humphreys CJ Kelly A Jones CN
Intermetallics. vol. 8 (9-11), 1091-1100.
01-09-2000
Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structureBotton GA Nishino Y Humphreys CJ
Intermetallics, Elsevier vol. 8 (9-11), 1209-1214.
01-09-2000
Chemical mapping and formation of V-defects in InGaN multiple quantum wellsSharma N Thomas P Tricker D Humphreys C
Applied Physics Letters, Aip Publishing vol. 77 (9), 1274-1276.
28-08-2000
The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloyPekarskaya E Botton GA Jones CN Humphreys CJ
Intermetallics, Elsevier vol. 8 (8), 903-913.
01-08-2000
The Effect of Local Symmetry on Atomic Resolution EELS Near-Edge Structures: Predictions for Grain Boundaries In NiAlPankhurst DA Botton GA Humphreys CJ
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 6 (S2), 186-187.
01-08-2000
Facing up to the future of materials science and technologyHumphreys C
Materials World vol. 8 (4), 11-13.
01-01-2000
Oxbridge and the public schoolsHumphreys C
Materials World vol. 8 (1), 2-3.
01-01-2000
THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISALHumphreys C
Vetus Testamentum, Brill Academic Publishers vol. 50 (3), 323-328.
01-01-2000
1999
Characterisation of Epitaxial Laterally Overgrown Gallium Nitride Using Transmission Electron MicroscopyTricker DM Jacobs K Humphreys CJ
physica status solidi (b). vol. 216 (1), 633-637.
01-11-1999
Electrons seen in orbitHumphreys CJ
Nature, Springer Nature vol. 401 (6748), 21-22.
01-09-1999
Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3Saifullah MSM Botton GA Boothroyd CB Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 86 (5), 2499-2504.
01-09-1999
A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxyKaiser U Khodos I Brown PD Chuvilin A Albrecht M Humphreys CJ Fissel A Richter W
Journal of Materials Research, Springer Nature vol. 14 (8), 3226-3236.
01-08-1999
Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)Weyher JL Brown PD Zauner ARA Müller S Boothroyd CB Foord DT Hageman PR Humphreys CJ et al.
Journal of Crystal Growth, Elsevier vol. 204 (4), 419-428.
01-08-1999
Determining the bonding in intermetallics using electron energy loss spectroscopy and density functional theory2This paper was originally presented at the Kyoto Workshop on High Temperature Intermetallics in May 1998.2Botton GA Humphreys CJ
Intermetallics. vol. 7 (7), 829-833.
01-07-1999
The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxyKaiser U Brown PD Khodos I Humphreys CJ Schenk HPD Richter W
Journal of Materials Research, Springer Nature vol. 14 (5), 2036-2042.
01-05-1999
Quantitative analysis of ultrathin doping layers in semiconductors using high‐angle annular dark field imagesLIU PRESTON BOOTHROYD HUMPHREYS
Journal of Microscopy, Wiley vol. 194 (1), 171-182.
01-04-1999
Energy‐filtered transmission electron microscopy of multilayers in semiconductorsLIU BOOTHROYD HUMPHREYS
Journal of Microscopy, Wiley vol. 194 (1), 58-70.
01-04-1999
Experimental and theoretical study of the detection limits in electron energy-loss spectroscopyNatusch MKH Humphreys CJ Menon N Krivanek OL
Micron. vol. 30 (2), 173-183.
01-04-1999
A two-phase charge-density real-space-pairing model of high-Tc superconductivityHumphreys CJ
Acta Crystallographica Section a Foundations of Crystallography vol. 55 (2 PART I), 228-233.
01-03-1999
A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopyWalther T Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 197 (1-2), 113-128.
01-02-1999
Temperature and energy dependence of SEM dopant contrastElliott SL Broom RF Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1999. (161), 87-90.
01-01-1999
Probing atomic bonding using fast electronsHumphreys CJ Botton GA
TOPICS IN ELECTRON DIFFRACTION AND MICROSCOPY OF MATERIALS., 65-78.
01-01-1999
Convergent Beam Electron DiffractionHumphreys CJ
NATO Science Series E:., 325-337.
01-01-1999
Advances in high resolution imaging and microanalysis of Si, GaAs and GaNHumphreys CJ Bright AN Elliott SL
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS. (164), 1-10.
01-01-1999
Composition of grain boundaries and interfaces: A comparison of modern analytical techniques using a 300 kV FEGTEMKeast VJ Midgley PA Lloyd SJ Thomas PJ Weyland M Boothroyd CB Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1999. (161), 35-38.
01-01-1999
Dislocations in a multiphase Ni-Al-Fe alloyPekarskaya E Jones CN Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1999. (161), 463-466.
01-01-1999
A TEM assessment of GaN/SiC layers grown by MBEBright AN Brown PD Tricker DM Jeffs N Foxon CT Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS. (164), 415-418.
01-01-1999
Characterisation of ohmic contacts to n-GaN using transmission electron microscopyBright AN Tricker DM Davies R Beanland R Thomas PJ Lloyd SJ Midgley PA Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1999. (161), 597-600.
01-01-1999
Obtaining bonding information from EELS near-edge structures: grain-boundaries in NiAlPankhurst DA Botton GA Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1999. (161), 67-70.
01-01-1999
FEG-SEM imaging of semiconductor dopant contrastElliott SL Broom RF Humphreys CJ Thrush EJ Considine L Thomson DB de Boer WB
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS. (164), 727-730.
01-01-1999
Characterisation of silicon nanocrystals in silica and correlation with luminescenceSharma N Keast VJ Iwayama TS Boyd I Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1999. (161), 589-592.
01-01-1999
Compositional mapping of nanoscale metallic multilayers: a comparison of techniquesKeast VJ Misra A Kung H Mitchell TE Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1999. (161), 211-214.
01-01-1999
Structure and Climb of Faulted Dipoles in GaAsYonenaga I Lim S Shindo D Brown PD Humphreys CJ
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 171 (1), 53-57.
01-01-1999
Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous SiliconSmith JP Eccleston W Brown PD Humphreys CJ
Journal of The Electrochemical Society, The Electrochemical Society vol. 146 (1), 306-312.
01-01-1999
Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materialsChen GS Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 85 (1), 148-152.
01-01-1999
The Effect of the Buffer Layer on the Structure, Mobility and Photoluminescence of MBE grown GaNSharma N Tricker D Keast V Hooper S Heffernan J Barnes J Kean A Humphreys C
MRS Advances. vol. 595 (1)
01-01-1999
Inversion domain nucleation in homoepitaxial GaNBrown PD Weyher JL Boothroyd CB Foord DT Zauner ARA Hageman PR Larsen PK Bockowski M et al.
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS. (164), 381-384.
01-01-1999
GEOMETRY OF THREE BEAM PHASE DETERMINATIONMoodie AF Etheridge J Humphreys CJ
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES. vol. 55, 24-24.
01-01-1999
DIRECT MEASUREMENT OF PHASE-INVARIANTS AND STRUCTURE AMPLITUDES FROM 3 BEAM CBED PATTERNSEtheridge J Moodie AF Humphreys CJ
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES. vol. 55, 24-24.
01-01-1999
THE VALIDITY OF QUASI-KINEMATIC THEORY IN ELECTRON CRYSTALLOGRAPHYWhitfield HJ Moodie AF Etheridge J Humphreys CJ
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES. vol. 55, 24-24.
01-01-1999
1998
Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAsLim S-H Shindo D Yonenaga I Brown PD Humphreys CJ
Physical Review Letters, American Physical Society (Aps) vol. 81 (24), 5350-5353.
14-12-1998
Electron Microscopy, Electrical Activity, Artefacts and the Assessment of Semiconductor Epitaxial GrowthBrown PD Humphreys CJ
MRS Online Proceedings Library. vol. 523 (1), 207-224.
01-12-1998
Energy-Filtered Transmission Electron Microscopy of Multilayers in SemiconductorsLiu CP Boothroyd CB Humphreys CJ
MRS Online Proceedings Library. vol. 523 (1), 159-164.
01-12-1998
High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb FluxMatsuda K Tatsuoka H Matsunaga K Isaji K Kuwabara H Brown PD Xin Y Dunin-Borkowski R et al.
Japanese Journal of Applied Physics, Iop Publishing vol. 37 (12R)
01-12-1998
Stuff of dreamsHumphreys C
New Scientist vol. 157 (2126), 44-45.
01-12-1998
Microwave dielectric properties of (Y2-xRx)BaCuO5 (R = rare-earth) solid solutionsOgawa H Watanabe M Ohsato H Humphreys C
IEEE International Symposium on Applications of Ferroelectrics, 517-520.
01-12-1998
Climb of dislocations in GaAs by irradiationYonenaga I Brown PD Humphreys CJ
Materials Science and Engineering A, Elsevier vol. 253 (1-2), 148-150.
01-09-1998
Microwave Dielectric Properties of Y2Ba(Cu1-xZnx)O5 Solid SolutionsWatanabe M Ogawa H Ohsato H Humphreys C
Japanese Journal of Applied Physics. vol. 37 (9S)
01-09-1998
Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructuresChen GS Boothroyd CB Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 78 (2), 491-506.
01-08-1998
Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3 Al alloysNishino Y Inkson BJ Ogawa T Humphreys CJ
Philosophical Magazine Letters, Taylor & Francis vol. 78 (2), 97-103.
01-08-1998
Shaping the future of materials scienceHumphreys C
Materials World vol. 6 (6), 352-355.
01-06-1998
Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxyTatsuoka H Isaji K Sugiura K Kuwabara H Brown PD Xin Y Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 83 (10), 5504-5508.
15-05-1998
Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U studyDudarev SL Botton GA Savrasov SY Humphreys CJ Sutton AP
Physical Review B, American Physical Society (Aps) vol. 57 (3), 1505-1509.
15-01-1998
The ultimate detection limits of electron energy-loss spectroscopyNatusch MKH Botton GA Humphreys CJ Krivanek OL
ELECTRON., 476-483.
01-01-1998
A microstructural model of high-Tc superconductivityHumphreys CJ
ELECTRON., 124-134.
01-01-1998
The Coulomb interaction and the direct measurement of structural phaseMoodie AF Etheridge J Humphreys CJ
ELECTRON., 235-246.
01-01-1998
Local electronic structure of defects in GaN from spatially resolved electron energy-loss spectroscopyNatusch MKH Botton GA Humphreys CJ
GROWTH AND PROCESSING OF ELECTRONIC MATERIALS., 30-36.
01-01-1998
Detection limits in electron energy-loss spectroscopy and energy-filtered imagingNatusch MKH Botton GA Krivanek OL Humphreys CJ
ELECTRON MICROSCOPY 1998, VOL 3., 651-652.
01-01-1998
A TEM study of a GaN/InGaN superlattice structure grown by MBETricker DM Bright AN Brown PD Korakakis D Cheng TS Foxon CT Humphreys CJ
ELECTRON MICROSCOPY 1998, VOL 3., 393-394.
01-01-1998
Experimental investigation of the effect of defocus on beam diameter in focused ion beam millingCampbell LCI Humphreys CJ
ELECTRON MICROSCOPY 1998, VOL 3., 157-158.
01-01-1998
A joint theoretical and experimental investigation of bonding character at a grain boundary in the B2 compound NiAlPankhurst DA Botton GA Humphreys CJ
ELECTRON MICROSCOPY 1998, VOL 2., 643-644.
01-01-1998
A simple and efficient way to obtain more information about interband transitions from an electron energy-loss spectrum in the low-loss regionNatusch MKH Botton GA Humphreys CJ
ELECTRON MICROSCOPY 1998, VOL 3., 627-628.
01-01-1998
Characterisation of a Gatan Imaging Filter mounted on a dedicated STEMNatusch MKH Botton GA Krivanek OL Humphreys CJ
ELECTRON MICROSCOPY 1998, VOL 1., 95-96.
01-01-1998
Irradiation damage of inorganic resists on a silicon substrateSaifullah MSM Boothroyd CB Botton GA Humphreys CJ
ELECTRON., 531-537.
01-01-1998
The Compton scattering distribution from InP by electron spectroscopic diffractionLiu CP Boothroyd CB Humphreys CJ
ELECTRON., 456-463.
01-01-1998
Direct measurement of structure amplitudes from three beam interactionsEtheridge J Moodie AF Humphreys CJ
ELECTRON MICROSCOPY 1998, VOL 3., 737-738.
01-01-1998
Evidence for charged defects in wurtzite GaN from spatially resolved electron energy-loss spectroscopyNatusch MKH Botton GA Humphreys CJ
ELECTRON MICROSCOPY 1998, VOL 3., 391-392.
01-01-1998
Electronic Structure, Charge Transfer and Bonding in Intermetallics Using EELS and Density Functional TheoryHumphreys CJ Botton GA Pankhurst DA Keast VJ Temmerman WM
Mrs Advances, Springer Nature vol. 552 (1)
01-01-1998
Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr AdditionsPekarskaya E Jones CN Humphreys CJ
Mrs Advances, Springer Nature vol. 552 (1)
01-01-1998
Microwave dielectric properties of Y2Ba(Cu1-xZnx)O5 solid solutionsWatanabe M Ogawa H Ohsato H Humphreys C
Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers vol. 37 (9 PART B), 5360-5363.
01-01-1998
RHEED for the rapid structural assessment of epitaxial GaN and metallisation layersBright A Brown PD Tricker D Humphreys C
ELECTRON MICROSCOPY 1998, VOL 3., 439-440.
01-01-1998
High-quality epitaxial MnSi(111) layers grown in the presence of an Sb fluxMatsuda K Tatsuoka H Matsunaga K Isaji K Kuwabara H Brown PD Xin Y Dunin-Borkowski R et al.
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers vol. 37 (12A), 6556-6561.
01-01-1998
A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substratesTricker DM Brown PD Cheng TS Foxon CT Humphreys CJ
Applied Surface Science. vol. 123, 22-27.
01-01-1998
The Number of People in the Exodus from Egypt: Decoding Mathematically the Very Large Numbers in Numbers I and XXVIHumphreys C
Vetus Testamentum, Brill Academic Publishers vol. 48 (2), 196-213.
01-01-1998
1997
Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBEKaiser U Brown PD Chuvilin A Khodos II Fissel A Richter W Preston A Humphreys CJ
Materials Science Forum. vol. 264-268, 259-264.
22-12-1997
Investigation of the proximity effect in amorphous AlF3 electron-beam resistsChen GS Humphreys CJ
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 15 (6), 1954-1960.
01-11-1997
Book Review: The Economic Laws of Scientific Research, Terence Kealey. Macmillan Press, Basingstoke and London, 1996. £47.50 (hardback). 0-333-56045-0Humphreys C
European Review, Cambridge University Press (Cup) vol. 5 (4), 443-445.
01-10-1997
Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopyWalther T Humphreys CJ Cullis AG
Applied Physics Letters, Aip Publishing vol. 71 (6), 809-811.
11-08-1997
Analysis of EELS near edge structures to study the bonding character in intermetallic alloysBotton GA Humphreys CJ
Micron, Elsevier vol. 28 (4), 313-319.
01-08-1997
Interfaces and Defects in Opto-Electronic Semiconductor Films Studied by Atomic Resolution STEMXin Y Wallis D Browning N Sivananthan S Pennycook S Humphreys C
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 3 (S2), 461-462.
01-08-1997
Characterization of Ultrathin Doping Layers in SemiconductorsLiu C Dunin-Borkowski R Boothroyd C Brown P Humphreys C
Microscopy and Microanalysis, Oxford University Press (OUP) vol. 3 (4), 352-363.
01-07-1997
Microstructural and electron spectroscopic characterization of carbon nanostructures and nanotubes produced using multimetal catalystsBotton GA Burnell G Humphreys CJ Yadav T Withers JC
Journal of Physics and Chemistry of Solids, Elsevier vol. 58 (7), 1091-1102.
01-07-1997
Determining directly from experiment the magnitude of the Burgers vector of glissile c-component dislocations in Ti AlWiezorek JMK Humphreys CJ Fraser HL
Philosophical Magazine Letters, Taylor & Francis vol. 75 (5), 281-290.
01-05-1997
Domain boundaries in epitaxial wurtzite GaNXin Y Brown PD Humphreys CJ Cheng TS Foxon CT
Applied Physics Letters, Aip Publishing vol. 70 (10), 1308-1310.
10-03-1997
Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxyXin Y Brown PD Dunin-Borkowski RE Humphreys CJ Cheng TS Foxon CT
Journal of Crystal Growth, Elsevier vol. 171 (3-4), 321-332.
01-02-1997
A Combined TEM/RHEED, SEM/CL Study of Epitaxial GaNBrown PD Tricker DM Xin Y Cheng TS Foxon CT Evans D Galloway SA Brock J et al.
MRS Advances. vol. 482 (1), 458-463.
01-01-1997
The effects of surface relaxation and ion thinning on δ-doped semiconductor cross-sectionsLiu CP Brown PD Boothroyd CB Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. (157), 483-486.
01-01-1997
Developing a methodology for the electron energy-loss spectroscopy of defects in GaNNatusch MKH Botton GA Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. (157), 213-216.
01-01-1997
Local Electronic Structure of Defects in GaN From Spatially Resolved Electron Energy-Loss SpectroscopyNatusch MKH Botton GA Broom RF Brown PD Tricker DM Humphreys CJ
MRS Online Proceedings Library. vol. 482 (1), 784-789.
01-01-1997
Diffusion and Surface Segregation in Thin SiGe/Si Layers Studied by Scanning Transmission Electron MicroscopyWalther T Humphreys CJ Robbins DJ
Defect and Diffusion Forum. vol. 143-147, 1135-1140.
01-01-1997
Probing the effect of defects on band structure in GaNTricker DM Natusch MKH Boothroyd CB Xin Y Brown PD Cheng TS Foxon CT Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. (157), 217-220.
01-01-1997
Domain boundaries in epitaxial GaN grown on {(111)over-bar}B GaAs and GaP by molecular beam epitaxyXin Y Brown PD Cheng TS Foxon CT Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. (157), 95-98.
01-01-1997
Structural and electronic properties of partially crystallised siliconBrown PD Smith JP Eccleston W Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. (157), 427-430.
01-01-1997
Electron Energy Loss Spectroscopy as a Tool to Probe the Electronic Structure in Intermetallic AlloysBotton GA Guo G-Y Temmerman WM Humphreys CJ
01-01-1997
A Tem Study of the Microstructural Evolution of MBE-Grown GaNTricker DM Brown PD Martin G Lu J Westwood DI Hill P Haworth L MacDonald JE et al.
MRS Advances. vol. 482 (1), 187-192.
01-01-1997
The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imagingLiu CP Boothroyd CB Brown PD Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. (157), 67-70.
01-01-1997
Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by hot-wall epitaxyTatsuoka H Brown PD Xin Y Isaji K Kuwabara H Nakanishi Y Nakamura T Fujiyasu H et al.
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. (157), 59-62.
01-01-1997
Microstructural investigations of silicon carbide and aluminium nitride MBE layers on silicon substratesKaiser U Brown PD Jinschek J Adamik M Humphreys CJ Karmann S Fissel A Pfennighaus K et al.
EUROPEAN JOURNAL OF CELL BIOLOGY. vol. 74, 120-120.
01-01-1997
A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wellsWalther T Humphreys CJ Cullis AG Robbins DJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997. (157), 47-54.
01-01-1997
Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxyCheng TS Foxon CT Ren GB Jeffs NJ Orton JW Novikov SV Xin Y Brown PD et al.
COMPOUND SEMICONDUCTORS 1996. (155), 259-262.
01-01-1997
1996
Scanning transmission electron beam induced conductivity investigation of a Si/Si1− x Ge x /Si heterostructureBrown PD Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 80 (4), 2527-2529.
15-08-1996
Direct determination of phase from three-beam convergent-beam diffraction patterns of centrosymmetric crystalsEtheridge J Moodie AF Humphreys CJ
Acta Crystallographica Section A: Foundations and advances. vol. 52 (a1), c54-c54.
08-08-1996
Missed opportunities for high-temperature superconductivityHarrowell RV
Physics World, Iop Publishing vol. 9 (8), 15-15.
01-08-1996
Experimental and theoretical study of the electronic structure of Fe, Co, and Ni aluminides with the B2 structureBotton GA Guo GY Temmerman WM Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 54 (3), 1682-1691.
15-07-1996
Electron-beam induced crystallization transition in self-developing amorphous AlF3 resistsChen GS Boothroyd CB Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 69 (2), 170-172.
08-07-1996
The Symmetry of Three‐Beam Scattering Equations: Inversion of Three‐Beam Diffraction Patterns from Centrosymmetric CrystalsMoodie AF Etheridge J Humphreys CJ
Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 52 (4), 596-605.
01-07-1996
High-resolution electron microscopy study of the junction between a coherent {111} and an incoherent {121} twin boundary in TiAlInkson BJ Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 73 (6), 1647-1661.
01-06-1996
Dislocations at 120° order interfaces in TiAlInkson BJ Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 73 (5), 1333-1345.
01-05-1996
Effect of a doping impurity on the formation of structural defects in CdTe irradiated by electrons and ionsLoginov YY Brown PD Humphreys CJ
Physics of The Solid State vol. 38 (4), 692-697.
01-04-1996
Formation of structural defects in CdTe and CdZnTe heteroepitaxial layers grown on GaAsLoginov YY Brown PD Humphreys CJ
Physics of The Solid State vol. 38 (2), 272-277.
01-02-1996
Misfit control in NiTi/Ni2TiAlβ/β′ alloysPeters MA Humphreys CJ
STRUCTURAL INTERMETALLICS 1997., 605-612.
01-01-1996
TEM and PL characterisation of MBE-grown epitaxial GaN/GaAsXin Y Brown PD Boothroyd CB Preston AR Humphreys CJ Cheng TS Foxon CT Andrianov AV et al.
MRS Online Proceedings Library. vol. 423 (1), 311-316.
01-01-1996
Atom positions in the R-phase unit cell in TiNi shape memory alloyChen Q Knowles KM Humphreys CJ Wu XF
Journal of Materials Science, Springer Nature vol. 31 (16), 4227-4231.
01-01-1996
Defect Formation in ZnTe and (Cd,Zn)Te Epitaxial Layers Grown on (001) GaAsLoginov YY Brown PD Humphreys CJ
Inorganic Materials vol. 32 (1), 22-25.
01-01-1996
Growth of GaN films on (001) and (111) GaAs surfaces by a modified MBE methodCheng TS Foxon CT Jeffs NJ Hughes OH Ren BG Xin Y Brown PD Humphreys CJ et al.
Mrs Internet Journal of Nitride Semiconductor Research, Springer Nature vol. 1 (1)
01-01-1996
1995
On the dissociation of prism plane superdislocations in Ti3AlWiezorek JMK Court SA Humphreys CJ
Philosophical Magazine Letters, Taylor & Francis vol. 72 (6), 393-403.
01-12-1995
Eels Studies of B2-Type Transition Metal Aluminides: Experiment and TheoryBotton GA Guo GY Temmerman WM Szotek Z Humphreys CJ Wang Y Stocks GM Nicholson DMC et al.
MRS Advances. vol. 408 (1), 567-572.
01-12-1995
The microstructure of MnSb grown on (001) GaAs by hot wall epitaxyXin Y Brown PD Boothroyd CB Humphreys CJ Tatsuoka H Kuwabara H Oshita M Nakamura T et al.
Journal of Crystal Growth, Elsevier vol. 156 (3), 155-162.
01-11-1995
A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer EpitaxyWalther T Humphreys CJ Cullis AG Robbins DJ
Materials Science Forum, Trans Tech Publications vol. 196-201, 505-510.
01-11-1995
TEM Investigation of Point Defect Interactions in II-VI CompoundsLoginov YY Brown PD Humphreys CJ
Materials Science Forum. vol. 196-201, 1461-1466.
01-11-1995
Detection of random alloy fluctuations in high-resolution transmission electron micrographs of AlGaAsWalther T Humphreys CJ Grimshaw MP Churchill AC
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 72 (4), 1015-1030.
01-10-1995
Measurement of low-order structure factors for silicon from zone-axis CBED patternsSaunders M Bird DM Zaluzec NJ Burgess WG Preston AR Humphreys CJ
Ultramicroscopy, Elsevier vol. 60 (2), 311-323.
01-09-1995
On the hierarchy of planar fault energies in TiAlWiezorek JMK Humphreys CJ
Scripta Metallurgica Et Materialia, Elsevier vol. 33 (3), 451-458.
01-08-1995
Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substratesBrown PD Loginov YY Stobbs WM Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 72 (1), 39-57.
01-07-1995
HREM studies of the (001) surface of YBa2Cu4O8Xin Y Zhou W Humphreys CJ
Physica C: Superconductivity and Its Applications, Elsevier vol. 249 (3-4), 319-332.
01-07-1995
High-resolution electron microscopy observation of a 1/2(112) superdislocation in TiAlInkson BJ Humphreys CJ
Philosophical Magazine Letters, Taylor & Francis vol. 71 (6), 307-312.
01-06-1995
Boride morphology in A (Fe, V, B) Ti-alloy containing B2-phaseInkson BJ Boothroyd CB Humphreys CJ
Acta Metallurgica Et Materialia, Elsevier vol. 43 (4), 1429-1438.
01-04-1995
Assessment of semiconductor epitaxial growth by transmission electron microscopyBrown PD Humphreys CJ
Materials Science and Technology, Sage Publications vol. 11 (1), 54-65.
01-01-1995
Electron Beam Induced Crystallisation in Iron (III) FluorideSaifullah MSM Boothroyd CB Botton GA Humphreys CJ
MRS Advances. vol. 398 (1), 195-200.
01-01-1995
The dependence of the rate of electron beam damage in amorphous aluminium oxide on beam current densityMorgan CJ Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 579-582.
01-01-1995
The precipitation of beta' Ni2TiAl from Al-doped beta Ni-Ti alloysPeters MA Botton GA Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 451-454.
01-01-1995
The role of plasmon scattering in the quantitative contrast analysis of high-resolution lattice images of GaAsWalther T Schaublin RE DuninBorkowski RE Boothroyd CB Humphreys CJ Stobbs WM
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 195-198.
01-01-1995
The limitations of pattern recognition and displacement measurement techniques for evaluating HREM images of strained semiconductor interfacesWalther T Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 103-106.
01-01-1995
STEBIC of Si/Si1-xGex/Si and high voltage REBIC of CdTeBrown PD Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 701-704.
01-01-1995
A contribution to the quantitative comparison of experimental high-resolution electron micrographs and image simulationsWalther T Hetherington CJD Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 53-56.
01-01-1995
HREM observation of omega-phase in an industrial TiAl alloyInkson BJ Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 547-550.
01-01-1995
STEBIC of Si/Si1-xGex/Si heterostructuresBrown PD Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 285-288.
01-01-1995
A comparative study of electron beam damage in crystalline and amorphous aluminium oxide.Morgan CJ Boothroyd CB Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 567-570.
01-01-1995
Strain relaxation induced local crystal tilts at Si/SiGe interfaces in cross-sectional transmission electron microscope specimensWalther T Boothroyd CB Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 11-16.
01-01-1995
The proximity effect for electron beam lithography of aluminium oxide.Morgan CJ Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 575-578.
01-01-1995
Faulted dipoles in Indium-doped GaAsYonenaga I Brown PD Burgess WG Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 87-90.
01-01-1995
Relaxation of (001)Si/Si1-xGex/Si heterostructuresXin Y Brown PD Schaublin RE Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 183-186.
01-01-1995
Electron beam nanolithography of FeF3 using a scanning transmission electron microscopeSaifullah MSM Boothroyd CB Morgan CJ Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 325-328.
01-01-1995
Dislocation configurations in low lattice-mismatched Si/SiGe/(001)Si heterostructuresXin Y Brown PD Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 87-90.
01-01-1995
The bonding character of intermetallic alloys using EELSBotton GA Guo GY Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 535-538.
01-01-1995
Point defect interactions in doped II-VI compounds under ion and electron beam irradiationLoginov YY Brown PD Humphreys CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995. vol. 146, 431-434.
01-01-1995
Artefacts within ion beam milled semiconductorsBrown PD Loginov YY Boothroyd CB Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 393-396.
01-01-1995
Column approximation effects on partial dislocation weak beam imagesWiezorek JMK Preston AR Humphreys CJ
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 455-458.
01-01-1995
A Model for Estimating the Stress Induced During Oxidation of Sharp Silicon StructuresMorgan CJ Humphreys CJ
MRS Online Proceedings Library. vol. 389 (1), 191-196.
01-01-1995
A TEM study of dislocation decoration in gamma-TiAlWiezorek JMK Botton G Humphreys CJ Fraser HL
ELECTRON MICROSCOPY AND ANALYSIS 1995. vol. 147, 515-518.
01-01-1995
A FRAMEWORK FOR THE FUTURECAMPBELL J HUMPHREYS C
Materials World vol. 3 (6), 286-287.
01-01-1995
1994
An HREM Investigation of a {12̄1}L10 Boundary in TialInkson BJ Humphreys CJ
MRS Advances. vol. 364 (1), 605-610.
01-12-1994
Experimental Tem and Image Simulation of Dislocations in Ti3A1Wiezorek JMK Court SA Humphreys CJ
MRS Advances. vol. 364 (1), 659-664.
01-12-1994
Control of Point Defects in SemiconductorsLoginov YY Brown PD Humphreys CJ
MRS Advances. vol. 373 (1), 529-534.
01-12-1994
Dislocation nucleation and propagation in semiconductor heterostructuresCherns D Mylonas S Chou CT Wu J Ashenford DE Lunn B Perovic DD Humphreys CJ
Scanning Microscopy. vol. 8 (4), 841-848.
01-12-1994
Interpretation of the {100} fringes in lattice images from the centre of carbon nanotubesCullen SL Boothroyd CB Humphreys CJ
Ultramicroscopy. vol. 56 (1-3), 127-134.
01-11-1994
Famines and cataclysmic volcanismWHITE RS HUMPHREYS CJ
Geology Today, Wiley vol. 10 (5), 181-185.
01-09-1994
Benefits of energy filtering for advanced convergent beam electron diffraction patternsBurgess WG Preston AR Botton GA Zaluzec NJ Humphreys CJ
Ultramicroscopy, Elsevier vol. 55 (3), 276-283.
01-09-1994
Transmission electron microscopy investigations of II–VI/GaAs heterostructuresBrown PD Loginov YY Mullins JT Durose K Brinkman AW Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 138 (1-4), 538-544.
01-04-1994
Burgers vector determination of decorated dislocations in γ-TiAl by diffraction contrast and large-angle convergent-beam electron diffractionWiezorek JMK Preston AR Court SA Fraser HL Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 69 (2), 285-299.
01-02-1994
Stebic RevisitedBrown PD Humphreys CJ
MRS Advances. vol. 354 (1), 425-430.
01-01-1994
Quantifying The Effects Of Amorphous Layers on Image Contrast Using Energy Filtered Transmission Electron MicroscopyBoothroyd CB Dunin-borkowski RE Stobbs WM Humphreys CJ
MRS Advances. vol. 354 (1), 495-500.
01-01-1994
Electron beam damage in amorphous AlF3. A study of mass loss vs timeALLEN RM CHEN GS HUMPHREYS CJ
ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B., 1307-1308.
01-01-1994
A study of proximity effects in AlF3 electron beam resistsCHEN GS MORGAN CJ HUMPHREYS CJ
ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B., 1305-1306.
01-01-1994
Momentum transfer dependence of the low energy loss distribution of carbon nanotubesCULLEN SL BOTTON G HUMPHREYS CJ
ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B., 311-312.
01-01-1994
An HREM study of 1/6<112> intrinsic dipole formation in a Ti-Al alloyINKSON BJ HUMPHREYS CJ
ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B., 83-84.
01-01-1994
EELS near edge structures in B2 intermetallics: A systematic seriesBOTTON GA HUMPHREYS CJ
ELECTRON MICROSCOPY 1994, VOL 1., 631-632.
01-01-1994
The effect of thin crystal strain relaxation on high-resolution images of Si/Si0.8Ge0.2 quantum wellsWALTHER T BOOTHROYD CB HUMPHREYS CJ CULLIS AG
ELECTRON MICROSCOPY 1994, VOL 1., 365-366.
01-01-1994
Defect anisotropy in (001) oriented sphalerite heteroepitaxial layersBROWN PD HUMPHREYS CJ
ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B., 149-150.
01-01-1994
Structure factor determination in germanium by zone axis CBEDBURGESS W SAUNDERS M BIRD DM PRESTON AR ZALUZEC NJ HUMPHREYS CJ
ELECTRON MICROSCOPY 1994, VOL 1., 849-850.
01-01-1994
From carbon socks to web-like wires: The microstructure of multi-metal filled carbon nanostructures by TEM and EELSBOTTON GA BURNELL G HUMPHREYS CJ YADAV T WITHERS JC
ELECTRON MICROSCOPY 1994, VOLS 2A AND 2B., 321-322.
01-01-1994
Hrem Lattice Image Simulations of Circular Cross-Sectional Multishell Carbon Nanotubes.Cullen SL Morgan CJ Boothroyd CB Humphreys CJ
MRS Advances. vol. 359 (1), 247-252.
01-01-1994
1993
Measuring the height of steps on MgO cubes using Fresnel contrast in a scanning transmission electron microscopeBoothroyd CB Humphreys CJ
Ultramicroscopy. vol. 52 (3-4), 318-324.
01-12-1993
Evolution and religionWhite RS Humphreys C
Nature, Springer Nature vol. 366 (6453), 296-296.
01-12-1993
Boron segregation in a (Fe, V, B) TiAl based alloyINKSON BJ BOOTHROYD CB HUMPHREYS CJ
The European Physical Journal Special Topics. vol. 03 (C7)
01-11-1993
Microstructure of A γ−α2−β TiAl alloy containing iron and vanadiumInkson BJ Boothroyd CB Humphreys CJ
Acta Metallurgica Et Materialia, Elsevier vol. 41 (10), 2867-2876.
01-10-1993
Novel fabrication method for nanometer-scale silicon dots and wiresChen GS Boothroyd CB Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 62 (16), 1949-1951.
19-04-1993
DETERMINATION OF STACKING-FAULT ENERGIES OF THE INTERMETALLIC TI-52AT-PERCENT ALWIEZOREK JMK HUMPHREYS CJ
ELECTRON MICROSCOPY AND ANALYSIS 1993. (138), 445-448.
01-01-1993
HIGH-RESOLUTION PROFILE IMAGING OF (HG, MN)TEBROWN PD KIRKLAND A HUMPHREYS CJ
ELECTRON MICROSCOPY AND ANALYSIS 1993. (138), 209-212.
01-01-1993
INVESTIGATIONS OF STRUCTURE AND DEGRADATION OF CARBON NANOTUBES BY EELS AND HREMCULLEN SL BOTTON G KIRKLAND AI BROWN PD HUMPHREYS CJ
ELECTRON MICROSCOPY AND ANALYSIS 1993. (138), 79-82.
01-01-1993
ELECTRON-INDUCED CRYSTALLIZATION IN ALUMINUM TRIFLUORIDECHEN GS BOOTHROYD CB HUMPHREYS CJ
ELECTRON MICROSCOPY AND ANALYSIS 1993. (138), 369-372.
01-01-1993
DIRECT ELECTRON-BEAM FABRICATION OF NANOMETER-SCALE SILICON COLUMNSCHEN GS BOOTHROYD CB HUMPHREYS CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993. (134), 503-508.
01-01-1993
ELECTRON-MICROSCOPE INVESTIGATIONS OF HETEROSTRUCTURES, NANOSTRUCTURES AND MISFIT DISLOCATIONSHUMPHREYS CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993. (134), 441-448.
01-01-1993
Boron segregation in a (Fe, V, B) TiAl based alloyInkson BJ Boothroyd CB Humphreys CJ
Journal De Physique. vol. 3 (7 pt 1), 397-402.
01-01-1993
THE EFFECT OF THE IMAGING ELECTRON-BEAM ON INP/INGAAS MQW STRUCTURESBROWN PD BITHELL EG HUMPHREYS CJ SKEVINGTON PJ PERRIN SD DAVIES GJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993. (134), 493-496.
01-01-1993
THE EFFECT OF GROWTH INTERRUPTS ON CBE GROWN INPBROWN PD BITHELL EG HUMPHREYS CJ SKEVINGTON PJ CANNARD PJ DAVIES GJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993. (134), 373-376.
01-01-1993
AN HREM INVESTIGATION OF THE DIAMOND HEXAGONAL PHASE IN A SILICON CONE FROM A VACUUM MICROELECTRONIC DEVICEMORGAN CJ KIRKLAND AI HUMPHREYS CJ
ELECTRON MICROSCOPY AND ANALYSIS 1993. (138), 267-270.
01-01-1993
DEBYE-WALLER FACTOR DETERMINATION FROM LACBED PATTERNSPRESTON AR BURGESS WG PICKUP CJ HUMPHREYS CJ
ELECTRON MICROSCOPY AND ANALYSIS 1993. (138), 145-148.
01-01-1993
ACCURATE STRUCTURE FACTOR REFINEMENT FROM ZONE-AXIS CBED PATTERNSSAUNDERS M BIRD DM ZALUZEC NJ BURGESS WG HUMPHREYS CJ
ELECTRON MICROSCOPY AND ANALYSIS 1993. (138), 125-128.
01-01-1993
A STUDY OF SAMPLE THICKNESS DEPENDENCE IN ELECTRON-BEAM HOLE-DRILLING OF INORGANIC MATERIALSALLEN RM LLOYD SJ HUMPHREYS CJ
ELECTRON MICROSCOPY AND ANALYSIS 1993. (138), 87-90.
01-01-1993
STRUCTURE FACTOR DETERMINATION BY ZONE-AXIS CBEDBURGESS WG SAUNDERS M BIRD D BOTTON G PRESTON AR HUMPHREYS CJ ZALUZEC NJ
ELECTRON MICROSCOPY AND ANALYSIS 1993. (138), 137-140.
01-01-1993
1992
The Jewish Calendar, A Lunar Eclipse and the Date of Christ’s CrucifixionHumphreys CJ Waddington WG
Tyndale Bulletin, Tyndale House vol. 43 (2)
01-11-1992
ULTIMATE LIMITS OF LITHOGRAPHYMORGAN C CHEN GS BOOTHROYD C BAILEY S HUMPHREYS C
Physics World vol. 5 (11), 28-32.
01-01-1992
1991
TEM study of nitrogen enhanced oxygen precipitation in nitrogen-doped Czochralski-grown siliconZhou X Preston AR Humphreys CJ
Institute of Physics Conference Series. (117), 211-216.
01-12-1991
Electron beam damage in AlF3Chen GS Boothroyd CB Humphreys CJ
Institute of Physics Conference Series. vol. 119, 325-328.
01-12-1991
Electron beam nanolithography of sputtered amorphous Al2O3 and the proximity effectMorgan CJ Bailey SJ Preston AR Humphreys CJ
Institute of Physics Conference Series. vol. 119, 503-506.
01-12-1991
100 keV electron beam damage of metals, ceramics and semiconductors - implications for microanalysis and nanolithographyHumphreys CJ Bullough TJ Devenish RW Maher DM
Institute of Physics Conference Series. vol. 119, 319-324.
01-12-1991
State of British scienceHUMPHREYS C
Nature, Springer Nature vol. 351 (6327), 513-513.
13-06-1991
The origin of dislocations in multilayersHumphreys CJ Maher DM Eaglesham DJ Kvam EP Salisbury IG
Journal De Physique III, Edp Sciences vol. 1 (6), 1119-1130.
01-06-1991
THE STAR OF BETHLEHEM - A COMET IN 5 BC - AND THE DATE OF THE BIRTH OF CHRISTHUMPHREYS CJ
Quarterly Journal of The Royal Astronomical Society vol. 32 (4), 389-407.
01-01-1991
TEM STUDY OF NITROGEN ENHANCED OXYGEN PRECIPITATION IN NITROGEN-DOPED CZOCHRALSKI-GROWN SILICONZHOU X PRESTON AR HUMPHREYS CJ
MICROSCOPY OF SEMICONDUCTING MATERIALS 1991. vol. 117, 211-216.
01-01-1991
100 keV electron beam damage of metals and oxidesHumphreys C
Micron, Elsevier vol. 22 (1-2), 147-148.
01-01-1991
Ceramic SuperconductorsHumphreys CJ
In Concise Encyclopedia of Advanced Ceramic Materials, Elsevier 67-73.
01-01-1991
1990
Crucifixion dateHUMPHREYS C WADDINGTON WG
Nature, Springer Nature vol. 348 (6303), 684-684.
27-12-1990
Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)SiKvam EP Maher DM Humphreys CJ
Journal of Materials Research, Springer Nature vol. 5 (9), 1900-1907.
01-09-1990
The interaction of electron beams with solids - Some new effectsHumphreys CJ Bullough TJ Devenish RW Maher DM Turner PS
Microscopy and Microanalysis, Cambridge University Press (Cup) vol. 48 (4), 788-789.
01-08-1990
Nanometre hole formation in MgO using electron beamsTurner PS Bullough TJ Devenish RW Maher DM Humphreys CJ
Philosophical Magazine Letters, Taylor & Francis vol. 61 (4), 181-193.
01-04-1990
On the microstructural evolution of sintered Bi-Sr-Ca-Cu-O high-Tc superconductorsZhang JG McCartney DG Humphreys CJ
Superconductor Science and Technology, Iop Publishing vol. 3 (4)
01-04-1990
1989
Dislocation Behaviour in GexSi1-x Epilayers on (001)SiKvam EP Maher DM Humphreys CJ
Mrs Advances, Springer Nature vol. 160 (1), 71-76.
01-12-1989
Electron Beam Induced Nanometre Hole Formation and Surface Modification in Al, Si And MgOBullough TJ Humphreys CJ Devenish RW
Mrs Advances, Springer Nature vol. 157 (1), 323-328.
01-12-1989
Book Review: Transmission Electron Microscopy. By L. ReimerHumphreys CJ
Angewandte Chemie International Edition, Wiley vol. 28 (12), 1763-1764.
01-12-1989
Transmission Electron Microscopy. By L. Reimer. Springer Series in Optical Sciences, Springer‐Verlag, Second Edition, 1989, xiii, 547 pp., paperback, DM 128. – ISBN 3‐540‐50499‐0Humphreys CJ
Angewandte Chemie, Wiley vol. 101 (12), 1803-1804.
01-12-1989
Controlling crystal growthHumphreys C
Nature, Springer Nature vol. 341 (6244), 689-689.
26-10-1989
Materials Science and Engineering in BritainHumphreys C
Angewandte Chemie International Edition, Wiley vol. 28 (8), 1077-1078.
01-08-1989
Dislocation nucleation near the critical thickness in GeSi/Si strained layersEaglesham DJ Kvam EP Maher DM Humphreys CJ Bean JC
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 59 (5), 1059-1073.
01-05-1989
Nanolithography using field emission and conventional thermionic electron sourcesDevenish RW Eaglesham DJ Maher DM Humphreys CJ
Ultramicroscopy, Elsevier vol. 28 (1-4), 324-329.
01-04-1989
Radiation effectsHumphreys CJ
Ultramicroscopy, Elsevier vol. 28 (1-4), 357-358.
01-04-1989
Compositional modulations in Ge x Si1− x heteroepitaxial layersFraser HL Maher DM Knoell RV Eaglesham DJ Humphreys CJ Bean JC
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 7 (2), 210-213.
01-03-1989
Tetragonal and monoclinic forms of Ge x Si1− x epitaxial layersEaglesham DJ Maher DM Fraser HL Humphreys CJ Bean JC
Applied Physics Letters, Aip Publishing vol. 54 (3), 222-224.
16-01-1989
New Source of Dislocations in GexSi1-x/Si(100) Strained Epitaxial LayersEaglesham DJ Maher DM Kvam EP Bean JC Humphreys CJ
Physical Review Letters, American Physical Society (Aps) vol. 62 (2), 187-190.
09-01-1989
Materials science and engineering in BritainHumphreys C
Advanced Materials, Wiley vol. 1 (8‐9), 249-250.
01-01-1989
Strains and Misfit Dislocations at InterfacesHumphreys CJ Eaglesham DJ Maher DM Fraser HL Salisbury I
In Evaluation of Advanced Semiconductor Materials by Electron Microscopy, Springer Nature 203-216.
01-01-1989
1988
High temperature superconducting ceramicsEaglesham DJ Humphreys CJ Alford NM Clegg WJ Harmer MA Birchall JD
Materials Science and Engineering B, Elsevier vol. 1 (3-4), 229-235.
01-12-1988
Dislocation Nucleation in GeSi/Si(100) Strained EpilayersEaglesham DJ Kvam EP Maher DM Humphreys CJ Bean JC
Mrs Advances, Springer Nature vol. 138 (1), 397-402.
01-12-1988
X-ray topography of the coherency breakdown in Ge x Si1− x /Si(100)Eaglesham DJ Kvam EP Maher DM Humphreys CJ Green GS Tanner BK Bean JC
Applied Physics Letters, Aip Publishing vol. 53 (21), 2083-2085.
21-11-1988
Convergent-beam imaging—a transmission electron microscopy technique for investigating small localized distortions in crystalsHumphreys CJ Maher DM Fraser HL Eaglesham DJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 58 (5), 787-798.
01-11-1988
ChemInform Abstract: Silica‐Supported Fe‐Pd Bimetallic Particles ‐ Formation from Mixed‐Metal Clusters and Catalytic Activity.BRAUNSTEIN P DEVENISH R GALLEZOT P HEATON BT HUMPHREYS CJ KERVENNAL J MULLEY S RIES M
Cheminform, Wiley vol. 19 (42), no-no.
18-10-1988
Plasma Anodisation of Silicon for Advanced VLSITaylor S Eccleston W Ringnalda J Maher DM Eaglesham DJ Humphreys CJ Godfrey DJ
Journal De Physique Archives, Edp Sciences vol. 49 (C4)
01-09-1988
Silica‐Supported FePd Bimetallic Particles: Formation from Mixed‐Metal Clusters and Catalytic ActivityBraunstein P Devenish R Gallezot P Heaton BT Humphreys CJ Kervennal J Mulley S Ries M
Angewandte Chemie International Edition, Wiley vol. 27 (7), 927-929.
01-07-1988
Fe‐Pd‐Bimetallpartikel auf SiO2‐Trägern – Bildung aus Heterometallclustern und katalytische AktivitätBraunstein P Devenish R Gallezot P Heaton BT Humphreys CJ Kervennal J Mulley S Ries M
Angewandte Chemie, Wiley vol. 100 (7), 972-973.
01-07-1988
Plasma anodisation of silicon for advanced VLSITaylor S Eccleston W Ringnalda J Maher DM Eaglesham DJ Humphreys CJ Godfrey DJ
European Solid State Device Research Conference., C4393-C4396.
01-01-1988
CBED and CBIM from semiconductors and superconductorsHumphreys CJ Eaglesham DJ Maher DM Fraser HL
Ultramicroscopy, Elsevier vol. 26 (1-2), 13-23.
01-01-1988
Erratum: Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7superconductorsHuxford NP Eaglesham DJ Humphreys CJ
Nature, Springer Nature vol. 331 (6153), 286-286.
01-01-1988
1987
The Nucleation and Propagation of Misfit Dislocations near the Critical Thickness in Ge-Si Strained EpilayersKvam EP Eaglesham DJ Maher DM Humphreys CJ Bean JC Green GS Tanner BK
Mrs Advances, Springer Nature vol. 104 (1), 623-628.
01-12-1987
Limits on quantitative information from high-resolution electron microscopy of YBa2Cu3O7 superconductorsHuxford NP Eaglesham DJ Humphreys CJ
Nature, Springer Nature vol. 329 (6142), 812-813.
01-10-1987
New phases in the superconducting Y:Ba:Cu:O systemEaglesham DJ Humphreys CJ Alford NM Clegg WJ Harmer MA Birchall JD
Applied Physics Letters, Aip Publishing vol. 51 (6), 457-459.
10-08-1987
THE ORTHORHOMBIC AND TETRAGONAL PHASES OF Y 1 Ba 2 Cu 3 O 9-yEaglesham DJ Humphreys CJ Clegg WJ Harmer MA AIford NM Birchall JD
Advanced Ceramic Materials, Wiley vol. 2 (3B), 662-667.
01-07-1987
Erratum: White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metals [Phys. Rev. B 34, 1467 (1986)]Waddington W Rez P Grant I Humphreys C
Physical Review B, American Physical Society (Aps) vol. 35 (10), 5297-5297.
01-04-1987
Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffractionMaher DM Fraser HL Humphreys CJ Knoell RV Bean JC
Applied Physics Letters, Aip Publishing vol. 50 (10), 574-576.
09-03-1987
Electron energy-loss spectroscopy studies of nanometre-scale structures in alumina produced by intense electron-beam irradiationBerger SD Salisbury IG Milne RH Imeson D Humphreys CJ
Philosophical Magazine B, Taylor & Francis vol. 55 (3), 341-358.
01-03-1987
Analytical electron microscopy of [Ni 38 Pt 6 (CO) 48 H] 5–Heaton BT Ingallina P Devenish R Humphreys CJ Ceriotti A Longoni G Marchionna M
Chemical Communications, Royal Society of Chemistry (Rsc) (10), 765-766.
01-01-1987
High Resolution Electron Microscopy and Convergent Beam Electron Diffraction of Semiconductor Quantum Well StructuresHumphreys CJ
In Thin Film Growth Techniques For Low-Dimensional Structures, Springer Nature 459-469.
01-01-1987
1986
STEM/EDX MICOANALYSIS OF COMPOSITIONAL FLUCTUATIONS IN SEMICONDUCTOR MULTI-QUANTUM-WELL STRUCTURES.Bullock JF Titchmarsh JM Humphreys CJ
Semiconductor Science and Technology vol. 1 (6), 342-345.
01-12-1986
STEM/EDX microanalysis of compositional fluctuations in semiconductor multi-quantum-well structuresBullock JF Titchmarsh JM Humphreys CJ
Semiconductor Science and Technology, Iop Publishing vol. 1 (6)
01-12-1986
Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged CrystalsEaglesham DJ Hetherington CJD Humphreys CJ
Mrs Advances, Springer Nature vol. 77 (1), 473-478.
01-12-1986
White lines in the L2,3 electron-energy-loss and x-ray absorption spectra of 3d transition metalsWaddington WG Rez P Grant IP Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 34 (3), 1467-1473.
01-08-1986
Electron‐beam damage observed in the fast proton conductor ammonium/hydronium β''‐alumina: a high‐resolution electron microscope (HREM) studyPetford AK Humphreys CJ
Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials, International Union of Crystallography (Iucr) vol. 42 (3), 224-229.
01-06-1986
1985
CRYSTALLINE EFFECTS IN THE ANALYSIS OF SEMICONDUCTOR MATERIALS USING AUGER ELECTRONS OR X-RAYS.Bullock JF Humphreys CJ Mace AJW Bishop HE Titchmarsh JM
Institute of Physics Conference Series. (76), 405-410.
01-12-1985
DETECTION OF LOCAL STRAINS IN STRAINED LAYER SUPERLATTICES.Fraser HL Maher DM Humphreys CJ Hetherington CJD Knoell RV Bean JC
Institute of Physics Conference Series. (76), 307-312.
01-12-1985
Geometric and electronic structure of a semiconductor superlatticeDavies RA Kelly MJ Kerr TM Hetherington CJD Humphreys CJ
Nature, Springer Nature vol. 317 (6036), 418-419.
01-10-1985
Surface physics: Hopping atoms in crystal growthHumphreys CJ
Nature, Springer Nature vol. 317 (6032), 16-16.
01-09-1985
Structure of the Al/Al2O3 interfaceTimsit RS Waddington WG Humphreys CJ Hutchison JL
Applied Physics Letters, Aip Publishing vol. 46 (9), 830-832.
01-05-1985
Examination of the Al/Al2O3 interface by high-resolution electron microscopyTimsit RS Waddington WG Humphreys CJ Hutchison JL
Ultramicroscopy, Elsevier vol. 18 (1-4), 387-394.
01-01-1985
1984
Nanometer scale electron beam lithography in inorganic materialsSalisbury IG Timsit RS Berger SD Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 45 (12), 1289-1291.
15-12-1984
MICRO-84: Electron microscopy 50 years onHumphreys CJ
Nature, Springer Nature vol. 311 (5981), 12-12.
06-09-1984
The atomic structure of the NiSi2-(001)Si interfaceCherns D Hetherington CJD Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 49 (1), 165-177.
01-07-1984
Crytallography: Defects in reduced oxidesHumphreys CJ
Nature, Springer Nature vol. 309 (5966), 310-310.
24-05-1984
CHANNELLING RADIATION IN ELECTRON MICROSCOPY.Spence JCH Humphreys CJ
Optik Jena vol. 66 (3), 225-242.
01-01-1984
The energy dependence of axial coherent bremsstrahlung at low accelerating voltagesButler JH Spence JCH Reese G Humphreys CJ Doole RC
Radiation Effects and Defects in Solids, Taylor & Francis vol. 84 (3-4), 245-256.
01-01-1984
1983
High resolution electron microscopy of silver β- and β″ -aluminasHull R Petford AK Humphreys CJ Smith DJ
Solid State Ionics, Elsevier vol. 9, 181-186.
01-12-1983
HIGH VOLTAGE ELECTRON MICROSCOPY - PRESENT ACHIEVEMENTS AND FUTURE PROSPECTS.Humphreys CJ
Lawrence Berkeley Laboratory Report LBL., 1-4.
01-12-1983
Dating the CrucifixionHumphreys CJ Waddington WG
Nature, Springer Nature vol. 306 (5945), 743-746.
01-12-1983
ATOMIC STRUCTURE OF THE NiSi//2/(001) Si INTERFACE.Hetherington CJD Cherns D Humphreys CJ
Institute of Physics Conference Series. (67), 89-94.
01-12-1983
A high‐resolution electron microscopic study of defects in sodium β′″‐aluminaHull R Smith DJ Humphreys CJ
Journal of Microscopy, Wiley vol. 130 (2), 203-214.
01-05-1983
Electron beam writing on a 20-Å scale in metal β-aluminasMochel ME Humphreys CJ Eades JA Mochel JM Petford AM
Applied Physics Letters, Aip Publishing vol. 42 (4), 392-394.
15-02-1983
1981
Fundamental concepts of stem imagingHumphreys CJ
Ultramicroscopy, Elsevier vol. 7 (1), 7-12.
01-01-1981
RESOLUTION AND ILLUMINATION COHERENCE IN ELECTRON MICROSCOPY.Humphreys CJ Spence JCH
Optik Jena vol. 58 (2), 125-142.
01-01-1981
1980
A multiple scattering transport theory for electronSpencer JP Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 42 (4), 433-451.
01-10-1980
The critical‐voltage effect in convergent‐beam high‐voltage electron diffractionSellar JR Imeson D Humphreys CJ
Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 36 (4), 686-696.
01-07-1980
The combined convergent beam/critical voltage technique in high voltage electron microscopySellar JR Imeson D Humphreys CJ
Micron (1969), Elsevier vol. 11 (3-4), 241-242.
01-01-1980
1979
The scattering of fast electrons by crystalsHumphreys CJ
Reports on Progress in Physics, Iop Publishing vol. 42 (11)
01-11-1979
A theoretical study of temperature distributions during Czochralski crystal growthBuckley-golder IM Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 39 (1), 41-57.
01-01-1979
1977
Additional image peaks in the high resolution imaging of dislocationsHumphreys CJ Drummond RA Hart-davis A Butler EP
The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 35 (6), 1543-1555.
01-06-1977
The distribution of intensity in electron diffraction patterns due to phonon scatteringRez P Humphreys CJ Whelan MJ
The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 35 (1), 81-96.
01-01-1977
HIGH RESOLUTION IMAGING OF DEFECTS.Humphreys CJ Drummond RA
Inst Phys Conf Ser. (36), 241-246.
01-01-1977
1976
DISTRIBUTION OF PHONON SCATTERED ELECTRONS IN HIGH ENERGY ELECTRON DIFFRACTION PATTERNS.Rez P Humphreys CJ Whelan MJ
undefined., 373-376.
01-01-1976
SPURIOUS PEAKS IN WEAK-BEAM IMAGES.Humphreys CJ Hart-Davis A
undefined., 409-412.
01-01-1976
1974
A theoretical model for the energy dependence of electron channelling patterns in scanning electron microscopySandström R Spencer JF Humphreys CJ
Journal of Physics D, Iop Publishing vol. 7 (7)
01-05-1974
ELECTRON CHANNELLING PATTERNS FROM DEFORMED CRYSTALS.Spencer JP Booker GR Humphreys CJ Joy DC
undefined., 919-925.
01-01-1974
Recent applications of high voltage electron microscopy in various branches of scienceHumphreys CJ
Microscope vol. 22 (2), 129-140.
01-01-1974
1973
SCANNING ELECTRON MICROSCOPY/1972. PROC I: 5TH ANNUAL SCANNING ELECTRON MICROSCOPE SYMPOSIUM, APR 1972; II: WORKSHOP ON BIOLOGICAL SPECIMEN PREPARATION FOR SCANNING ELECTRON MICROSCOPY, APR 1972.Humphreys CJ Spencer JP Woolf RJ Joy DC Titchmarsh JM Booker GR Strojnik A STickler R et al.
01-01-1973
1972
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electronsSpencer JP Humphreys CJ Hirsch PB
The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 26 (1), 193-213.
01-07-1972
The optimum voltage in very high voltage electron microscopyHumphreys CJ
The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 25 (6), 1459-1472.
01-06-1972
The critical voltage effect in high voltage electron microscopyLally JS Humphreys CJ Metherell AJF Fisher RM
The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 25 (2), 321-343.
01-02-1972
1971
Maximizing the penetration in high voltage electron microscopyHumphreys CJ Thomas LE Lally JS Fisher RM
The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 23 (181), 87-114.
01-01-1971
Bloch wave notation in many-beam electron diffraction theoryHumphreys CJ Fisher RM
Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 27 (1), 42-45.
01-01-1971
1970
Kikuchi patterns in a high voltage electron microscopeThomas LE Humphreys CJ
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 3 (3), 599-615.
16-11-1970
High resolution divergent-beam X-ray topographyTanner BK Humphreys CJ
Journal of Physics D, Iop Publishing vol. 3 (7)
01-07-1970
Aspects of Bloch-Wave Channeling in High-Voltage Electron MicroscopyHumphreys CJ Lally JS
Journal of Applied Physics, Aip Publishing vol. 41 (1), 232-235.
01-01-1970
Radiation damage of polymers in the million volt electron microscopeThomas LE Humphreys CJ Duff WR Grubb DT
Radiation Effects and Defects in Solids, Taylor & Francis vol. 3 (1), 89-91.
01-01-1970
1969
Inelastic scattering of fast electrons by crystalsHumphreys CJ Whelan MJ
The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 20 (163), 165-172.
01-07-1969
1968
Absorption parameters in electron diffraction theoryHumphreys CJ Hirsch PB
The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 18 (151), 115-122.
01-07-1968
1967
Some electron diffraction contrast effects at planar defects in crystalsHumphreys CJ Howie A Booker GR
The London Edinburgh and Dublin Philosophical Magazine and Journal of Science, Taylor & Francis vol. 15 (135), 507-522.
01-03-1967
Grants of specific relevance to the Centre for Sustainable Engineering
Grants of specific relevance to the Centre for Sustainable Engineering(EPSRC Programme Grant) Enabling Net Zero and the AI Revolution with ultra-low energy 2D Materials and Devices (NEED2D)Colin Humphreys, Dimitrios Papageorgiou, Oliver Fenwick and David Dunstan
£3,121,510 Engineering and Physical Sciences Research Council
16-04-2025 - 30-06-2030
Paragraf PhD Studentship Contribution (Linked to WT 6349893)Colin Humphreys
£70,155 Paragraf Paragraf Limited
01-01-2022 - 31-12-2025
HS Barlow Charitable Trust PhD Studentship Contribution (Linked to WT 6767036)Colin Humphreys
£45,000 HS Barlow Charitable Trust
01-01-2022 - 31-12-2024
Paragraf support fund - Rajveer Singh Rajaura (PhD Stipend Top-Up & Consumables Only)Colin Humphreys
£33,540 Paragraf Paragraf Limited
01-08-2021 - 31-07-2025
Paragraf 6 weeks support fund - Zhichao WengColin Humphreys
£43,907 Paragraf Paragraf Limited
01-01-2021 - 05-05-2021
Replacing Indium Tin Oxide (ITO) with next-generation graphene in electronic devicesColin Humphreys and William Gillin
£159,316 Innovate UK
01-01-2019 - 30-09-2020
Research Group
PhD Students
- Deepak Dinkar
Early-Stage Detection of Colon Cancer - Rajveer Singh Rajaura
Replacing Indium Tin Oxide (Ito) With Next-Generation Graphene in Electronic Devices
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